Claims
- 1. A microelectromechanical system (MEMS) device including a diaphragm comprising a conducting surface, the MEMS device, further comprising:exactly one layer of C60 fullerene on the conducting surface; and a single event pipe containing a gas that reacts with carbon byproducts produced after the exactly one layer of C60 fullerene is broken down into carbon by products.
- 2. The MEMS device of claim 1, wherein the conducting surface includes gold.
- 3. The MEMS device of claim 2, where the C60 fullerene is deposed on the gold surface by sublimation.
- 4. The MEMS device of claim 2 where the C60 fullerene is deposited on the gold surface by chemisorbtion.
- 5. A mechanically adjustable electron tunneling tip spacing system comprising:a tunneling tip including a piezoelectric element connected to an end of the tunneling tip; a MEMS device including a conducting surface opposed the tunneling tip; a single layer of C60 fullerene between the tunneling tip and the MEMS device conducting surface, the single layer of C60 fullerene comprising a spacer layer for establishing a predetermined spacing between the tunneling tip and the MEMS device conducting surface; and a single event pipe containing a gas that reacts with carbon byproducts, wherein the gas from the single event pipe reacts with the single layer of C60 fullerene between the tunneling tip and the MEMS device conducting surface after the single layer of C60 fullerene is broken down into carbon byproducts.
- 6. A system for providing a predetermined spacing between a conducting surface and a tunneling tip to form a tunneling device, comprising:a substrate including a conducting surface; a spacer layer having a predetermined thickness and having a first side and a second side, the first side of the spacer layer being disposed to contact the conducting surface; a tunneling tip being disposed to contact the second side of the spacer layer, the tunneling tip being set in position opposed to the conducting surface to form a tunneling device, the distance between the tunneling tip and the conducting surface being the predetermined thickness; an energy application member for applying energy to the substrate to cause a breakdown of the spacer layer between the tunneling tip and the conducting surface to produce a spacer layer residue; and a single event pipe containing a first gas for reacting with the spacer layer residue, wherein when the single event pipe is opened the first gas is released to fill a cavity between the tunneling tip and the conducting surface, a predetermined portion of the first gas reacts with the spacer layer residue in the cavity between the tunneling tip and the conducting surface to produce a second gas.
- 7. The system of claim 6,wherein the spacer layer comprises a monolayer of molecules with the predetermined thickness being the thickness of one molecule.
- 8. The system of claim 6,wherein the predetermined thickness is one nanometer.
- 9. The system of claim 7,wherein the spacer layer comprises C60 fullerene.
- 10. The system of claim 6,wherein the energy application member applies thermal energy.
- 11. The system of claim 6,wherein the energy application member applies electrical energy.
- 12. The system of claim 6, further comprising:a prefabricated sacrificial surface away from the tunneling device, the prefabricated sacrificial surface for adsorbing the first and second gases leaving the region around the tunneling tip free of adsorbed gases and spacer layer residue.
- 13. The system of claim 6,wherein the first gas reacts with carbon byproducts.
- 14. The system of claim 6,wherein the first gas is selected from the group comprising oxygen and hydrogen.
CROSS REFERENCE TO RELATED APPLICATION
This is a divisional application of U.S. Ser. No. 09/310,774 filed on May 3, 1999, which issued as U.S Pat. No. 6,277,438.
US Referenced Citations (20)
Non-Patent Literature Citations (3)
| Entry |
| Joachim et al., “A Nanoscale Single-Molecule Amplifer and Its Consequences”, Proceedings of the IEEE, vol. 86, No. 1, Jan. 1998, pp. 184-190.* |
| IBM Corp., “Molecular Brush Assembly”, IBM Technical Disclosure Bulleting, vol. 37, No. 1, Jan. 1994, pp. 261-262.* |
| RD 368034 A, Dec. 1994. |