Protective thin film layers and methods of dielectric passivation of organic materials using assisted deposition processes

Abstract

Methods of forming thin film layers and structures including the thin film layer are disclosed herein.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

Many aspects of the disclosed devices and methods can be better understood with reference to the following drawings and images. The components in the drawings are not necessarily to scale, emphasis instead being placed upon clearly illustrating the relevant principles. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the several views.

FIG. 1 illustrates an embodiment of an Ion Assisted Deposition (IAD) with an Advanced Plasma Source system.

FIGS. 2A through 2B illustrate digital images of a multi-pocket e-beam evaporator and four thermal evaporators that may be included in the IAD-APS system shown in FIG. 1.

FIG. 3 illustrates the water content of coated and uncoated CR 39 lenses versus the storage time at about a 95% r.h.

FIG. 4 shows a digital image of an atomic force microscope (AFM) scan of SiON deposited on silicon.

FIGS. 5A through 5B illustrate profile analyses of gratings. FIG. 5A illustrates a profile analysis of uncoated grating, and FIG. 5B illustrates a profile analysis of grating coated with ZnS by the IAD process.

FIG. 6 illustrates a digital image of a scanning electron microscope (SEM) cross section of multilayer films showing dense amorphous microstructure.

FIGS. 7A through 7D illustrate digital images of an H₂O permeation test using a Ca metal. FIG. 7A illustrates a Ca metal film that is coated with SiON film after about 7 months. FIG. 7B illustrates a Nomarski picture of the Ca metal film shown in FIG. 7A. FIG. 7C illustrates a Nomarski picture of a melting Ca surface.

FIGS. 8A through 8C illustrate photoluminescence (PL) results of accelerated aging studies. FIG. 8A illustrates the PL intensity versus the number of weeks for a sample (PVK (poly(n-vinyl carbazole)) spin-coated on Si substrate) that is coated with a SiON film and a sample that is not coated. FIG. 8B illustrates a digital image of the samples at about 0 weeks, and FIG. 8C illustrates a digital image of the samples at about 3 weeks aging.

Claims

1. A method of forming a thin film layer, comprising: providing a layer of an organic material; andforming a thin film of a material onto the layer of organic material at a temperature of about 25 to 150° C. and at an energy of about 40 to 300 eV, wherein the layer of organic material is not damaged, and wherein the thin film has a refractive index of about 1.4 to 2.3.

2. The method of claim 1, wherein the thin film is formed onto the layer of organic material at a temperature of about 30 to 70° C.

3. The method of claim 1, wherein the thin film is formed onto the layer of organic material at an energy of about 90 to 160 eV.

4. The method of claim 1, wherein the thin film has a refractive index of about 1.6 to 1.8.

5. The method of claim 1, wherein the thin film is an oxynitride.

6. The method of claim 5, wherein the oxynitride is silicon oxynitride.

7. The method of claim 1, wherein the thin film is selected from an aluminum oxide, an aluminum oxynitride, and combinations thereof.

8. The method of claim 1, wherein the thin film layer and the layer of organic material are part of an electronic device.

9. The method of claim 1, wherein the thin film layer and the layer of organic material are part of a device selected from: an organic light emitting diode, a solar cell, and a transistor.

10. The method of claim 1, wherein the thin film is a multilayer thin film.

11. A structure, comprising: a thin film layer deposited on a layer of an organic material, wherein the thin film has a refractive index of about 1.4 to 2.3, and wherein the thin film is an environmental barrier that protects the layer of organic material from environmental agents.

12. The structure of claim 11, wherein the thin film is an oxynitride.

13. The structure of claim 12, wherein the oxynitride is silicon oxynitride.

14. The structure of claim 11, wherein the thin film is selected from an aluminum oxide, an aluminum oxynitride, and combinations thereof.

15. The structure of claim 11, wherein the thin film layer and the layer of organic material are part of an electronic device.

16. The structure of claim 11, wherein the thin film layer and the layer of organic material are part of a device selected from: an organic light emitting diode, a solar cell, and a transistor.

17. The structure of claim 11, wherein the thin film has a refractive index of about 1.6 to 1.8.

18. The structure of claim 11, wherein the environmental agents are selected from: oxygen, moisture, and combinations thereof.

19. The structure of claim 11, wherein a luminescence of the layer of organic material is unchanged after months of accelerated aging.

20. The structure of claim 11, wherein the thin film is a multilayer thin film.