Claims
- 1. A transistor comprising, in combination:
- a. a semiconductor substrate of a first conductivity type having first and second separated regions of a second conductivity type therein said first and second regions respectively forming drain and source regions having a channel region disposed therebetween;
- b. a first insulating layer selectively overlying said semiconductor substrate, said first insulating layer including thinner and thicker portions, said thinner portion overlying a central portion of said channel region, said thicker portion overlying at least the remainder of said channel region;
- c. a second insulating layer overlying at least said thinner portion of said first insulating layer;
- d. an electrically conductive layer electrically contacting said thick portions of said first insulating layer and overlying said thinner portions of said second insulating layer; and
- e. means for forming electrical connections to said electrically conducting layer and said first and second regions of a second conductivity type.
- 2. A semiconductor device in accordance with claim 1 wherein: said semiconductor substrate is N conductivity type.
- 3. A semiconductor device in accordance with claim 2 wherein said first insulating layer is silicon oxide.
- 4. A semiconductor device in accordance with claim 3 wherein said second insulating layer is silicon nitride.
- 5. A semiconductor device in accordance with claim 4 wherein said conductive layer is aluminum.
Parent Case Info
This is a continuation of application Ser. No. 563,423 filed Mar. 28, 1975, now abandoned.
STATEMENT OF GOVERNMENT INTEREST
The disclosed and claimed herein was either first conceived or reduced to practice under Contract F33615-73-C-1093 with the U.S. Air Force.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
3836894 |
Cricchi |
Sep 1974 |
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Continuations (1)
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Number |
Date |
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Parent |
563423 |
Mar 1975 |
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