Claims
- 1. A fusible link structure, that is part of a semiconductor integrated circuit, comprising:
- a semiconductor substrate, including said integrated circuit;
- a first insulating layer on said semiconductor substrate;
- a pedestal, having top and bottom surface and comprising the same material as said first insulating layer, said bottom surface resting on said first insulating layer;
- a layer of fusible material further comprising a layer of polycrystalline silicone, between about 100 and about 2,000 Angstrom units thick, in contact with the top surface of said pedestal, and a layer of tungsten silicide, between about 1,500 and about 3,000 Angstrom units thick, over said layer of polycrystalline silicone, patterned into a line shape and connected to said integrated circuit; and
- a second insulating layer that covers said fusible layer, said pedestal, and said first insulating layer.
- 2. The structure of claim 1 wherein said second insulating layer further comprises a layer of boro-phosphosilicate glass in contact with said layer of fusible material, said pedestal, and said first insulating layer, overcoated with a layer of silicon nitride.
- 3. The structure of claim 2 wherein the thickness of said layer of boro-phosphosilicate glass is between 0 and about 7,000 Angstrom units and the thickness of said layer of silicon nitride is between 0 and about 7,000 Angstrom units.
- 4. The structure of claim 1 wherein the thickness of said first insulating layer is between about 1,000 and about 10,000 Angstrom units.
- 5. The structure of claim 1 wherein said first insulating layer comprises silicon oxide.
- 6. The structure of claim 1 wherein the thickness of the pedestal is between about 1,000 and about 9,000 Angstrom units.
Parent Case Info
This is a division of patent application Ser. No. 08/831,877, filing date Apr. 2, 1997 U.S. Pat. No. 5,729,042, Raised Fuse Structure For Laser Repair, assigned to the same assignee as the present invention.
US Referenced Citations (5)
Divisions (1)
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Number |
Date |
Country |
Parent |
831877 |
Apr 1997 |
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