Claims
- 1. A read only memory semiconductor device comprising:
- a pair of regions of a first conductivity type formed in a semiconductor substrate of a second conductivity type opposite to said first conductivity type, the pair of regions individually forming drain and source regions of an MOS transistor;
- a first gate insulation film formed on said substrate;
- a first gate electrode conductive layer formed on said gate insulation film;
- a second insulation film formed on said gate electrode conductive layer;
- a second conductive layer of said first conductivity type formed on one region of said pair of regions, the second conductive layer extending through said second insulation film;
- a third insulation film formed on said second conductive layer and having a contact hole, the contact hole being partially above said one region; and
- a third conductive layer formed on said third insulation film, the third conductive layer extending into said contact hole and contacting said second conductive layer, a continuous portion of the third conductive layer being above said one region.
- 2. A semiconductor device according to claim 1, wherein said second conductive layer is formed of polysilicon.
- 3. A semiconductor device according to claim 1, wherein said one of the pair of semiconductor regions has a thicker part thereof which contacts said second conductive layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
58-75026 |
Apr 1983 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 603,698, filed Apr. 25, 1984, abandoned.
US Referenced Citations (6)
Non-Patent Literature Citations (1)
Entry |
"Late Implant Turns ROMs Around Fast," Electronics, May 31, 1983, R. Beresford, pp. 50-51. |
Continuations (1)
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Number |
Date |
Country |
Parent |
603698 |
Apr 1984 |
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