The present invention relates to a recording component (element) setting method, an image recording method, and an image recording apparatus (device) for controlling a number of recording components arrayed along an image recording medium depending on image data to record an image on the image recording medium.
There has been developed a spatial light modulator such as a digital micromirror device (DMD) or the like, for example, as the exposure apparatus for recording the wiring pattern on the photoresist 3 (see U.S. Pat. No. 5,132,723). The DMD comprises a number of micromirrors tiltably disposed in a grid-like array on SRAMs (memory cells). The micromirrors have respective surfaces with a highly reflective material such as aluminum or the like being evaporated thereon. When a digital signal representative of image data is written into SRAM cells, the corresponding micromirrors are tilted in a given direction depending on the digital signal, selectively turning on and off light beams and directing the turned-on light beams to the photoresist 3 to record a wiring pattern by exposure.
The light beams reflected by the respective micromirrors and led to the photoresist 3 may have different intensities, beam diameters, beam shapes, etc., depending on the location. On the substrate 2 where the wiring pattern is to be formed, the laminated state of the photoresist 3 may differ depending on the location due to irregularities of heating temperature and pressure, and chemical reaction rates may become irregular in chemical processes such as the developing process and the etching process. Due to localities caused by these irregularities, it may not be possible to form wiring patterns of desired line widths on the substrate 2.
It is a general object of the present invention to provide a recording component setting method, an image recording method, and an image recording apparatus which are capable of correcting localities with ease and of recording a desired image highly accurately on an image recording medium.
A major object of the present invention is to provide a recording component setting method, an image recording method, and an image recording apparatus which are capable of correcting localities in view of the state of recording components or an image recording medium.
A portal column 20 is mounted centrally on the bed 14 over the guide rails 16. Two CCD cameras 22a, 22b are fixed to one side of the column 20 for detecting the position in which the substrate F is mounted with respect to the exposure stage 18. A scanner 26 having a plurality of exposure heads 24a through 24j positioned and held therein for recording an image on the substrate F by way of exposure is fixed to the other side of the column 20. The exposure heads 24a through 24J are arranged in two staggered rows in a direction perpendicular to the directions in which the substrate F is scanned (the directions in which the exposure stage 18 is movable). Flash lamps 64a, 64b are mounted on the CCD cameras 22a, 22b, respectively, by respective rod lenses 62a, 62b. The flash lamps 64a, 64b apply an infrared radiation to which the substrate F is insensitive, as illuminating light, to an image capturing area for the CCD cameras 22a, 22b.
A guide table 66 which extends in the direction perpendicular to the directions in which the exposure stage 18 is movable is mounted on an end of the bed 14. The guide table 66 supports thereon a photosensor 68 movable in the direction indicated by the arrow x for detecting the amount of light of laser beams L emitted from the exposure heads 24a through 24j.
As shown in
In the direction in which the laser beam L reflected by the DMD 36 that is controlled to be turned on or off is emitted, there are successively disposed first image focusing optical lenses 44, 46 of a magnifying optical system, a microlens array 48 having may lenses corresponding to the respective micromirrors 40 of the DMD 36, and second image focusing optical lenses 50, 52 of a zooming optical system. Microaperture arrays 54, 56 for removing stray light and adjusting the laser beam L to a predetermined diameter are disposed in front of and behind the microlens array 48.
As shown in
In
As shown in
According to the present embodiment, in view of the above various factors responsible for the variations, the number of micromirrors 40 (the number of components) that are used to form one pixel of image on the substrate F can be controlled using mask data to produce images having a constant width W1 regardless of the positions in the direction indicated by the arrow x taking the various processes to the final peeling process into consideration, as shown in
The exposure apparatus 10 has an image data input unit 70 for entering image data to be recorded on the substrate F by exposure, a frame memory 72 for storing the two-dimensional image data, a resolution converter 74 for converting the resolution of the image data stored in the frame memory 72 into a higher resolution depending on the size and layout of the micromirrors 4 of the DMDs 36 of the exposure heads 24a through 24j, an output data processor 76 for processing the resolution-converted image data into output data to be assigned to the micromirrors 40, an output data corrector 78 for correcting the output data according to mask data, a DMD controller 42 (recording component control means) for controlling the DMDs 36 according to the corrected output data, and the exposure heads 24a through 24j for recording a desired image on the substrate F with the DMDs 36 that are controlled by the DMD controller 42.
A test data memory 80 for storing test data is connected to the resolution converter 74. The test data are data for recording by exposure a test pattern, which comprises a repetition of constant line widths and constant space widths, on the substrate F, and generating mask data based on the test pattern.
A mask data memory 82 (correction data storage means) for storing mask data is connected to the output data corrector 78. The mask data are data for specifying micromirrors 40 to be turned off at all times. The mask data are set by a mask data setting unit 86 (mask data setting means, particular recording component setting means). Connected to the mask data setting unit 86 are an amount-of-light locality data calculator 88 and a locality characteristic data setting unit 87 (locality characteristic data acquiring means). The amount-of-light locality data calculator 88 calculates amount-of-light locality data based on the amounts of light of the laser beams L detected by the photosensor 68. The locality characteristic data setting unit 87 sets therein locality characteristic data acquired from a test pattern recorded by exposure on the substrate F according to test data.
The exposure apparatus 10 according to the present embodiment is basically constructed as described above. A process of setting mask data will be described below with reference to a flowchart shown in
First, the exposure stage 18 is moved to place the photosensor 68 beneath the exposure heads 24a through 24j. Thereafter, the exposure heads 24a through 24J are energized (step S1). At this time, the DMD controller 42 sets all the micromirrors 40 of the DMDs 36 to an on-state for guiding the laser beams L to the photosensor 68.
While moving in the direction indicated by the arrow x in
Based on the supplied amount-of-light locality data, the mask data setting unit 86 generates initial mask data for making constant the amount Ei (i=1, 2, . . . ) of light of the laser beam L at each position xi (i=1, 2, . . . ) on the substrate F, and stores the initial mask data in the mask data memory 82 (step S4). The initial mask data are established as data for controlling some of a plurality of micromirrors 40 for forming one image pixel at each position xi on the substrate F, into an off-state according to the amount-of-light locality data in order to eliminate the amount-of-light locality shown in
After the initial mask data have been established, the exposure stage 18 is moved to place the substrate F beneath the exposure heads 24a through 24j, and the exposure heads 24a through 24J are energized based on test data (step S5).
The resolution converter 74 reads test data from the test data memory 80, converts the resolution of the test data into a resolution corresponding to the micromirrors 40 of the DMDs 36, and supplies the resolution-converted test data to the output data processor 76. The output data processor 76 processes the resolution-converted image data into test output data representing signals for selectively turning on and off the micromirrors 40, and supplies the test output data to the output data corrector 78. The output data corrector 78 forcibly turns off those test output data for the micromirrors 40 which correspond to the initial mask data supplied from the mask data memory 82, and then supplies the corrected test output data to the DMD controller 42.
The DMD controller 42 selectively turns on and off the micromirrors 40 of the DMDs 36 according to the test output data that have been corrected by the initial mask data, thereby applying the laser beams L emitted from the light source unit 28 to the substrate F to record a test pattern by exposure (step S6). Since the test pattern is formed according to the test output data that have been corrected by the initial mask data, the test pattern is free of the amount-of-light locality of the laser beams L.
The developing process, the etching process, and the resist peeling process are performed on the substrate F with the test pattern recorded thereon by exposure, producing the substrate F with the test pattern remaining thereon (step S7). As shown in
If the beam diameters, the beam shapes, etc. of the laser beams L applied to the substrate F differ depending on the location or the processing processes for the substrate, including the developing process, suffer irregularities, then the line widths Wi (i=1, 2, . . . ) or the space widths of the test patterns 90 are not constant even though amount-of-light localities have been adjusted according to initial mask data.
The line widths Wi (i=1, 2, . . . ) of the test patterns 90 on the substrate F are measured (step S8), and the measured result is supplied to the locality characteristic data setting unit 87. The locality characteristic data setting unit 87 calculates amount-of-light correction variables ΔEi (i=1, 2, . . . ) (locality characteristic data) for correcting the supplied line widths Wi (i=1, 2, . . . ) into a minimum line width Wmin, and supplies the minimum line width Wmin to the mask data setting unit 86 (step S9).
Based on the calculated amount-of-light correction variable ΔEi (i=1, 2, . . . ), the mask data setting unit 86 adjusts the initial mask data set in step S4 to establish mask data (step S10). The mask data are established as data for determining micromirrors 40 to be set to the off-state among the micromirrors 40 that are used to form one pixel of image at each position xi (i=1, 2, . . . ) on the substrate F, according to the amount-of-light correction variables ΔEi (i=1, 2, . . . ). The established mask data are stored, in place of the initial mask data, in the mask data memory 82.
A process of establishing the mask data will be described in detail below.
Using the proportion of an amount-of-light correction variable ΔEi (i=1, 2, . . . ) to an amount Ei (i=1, 2, . . . ) of light at the time the output data are corrected with the initial mask data (see
n=N·ΔEi/Ei.
The mask data are established to set the n micromirrors 40, among the N micromirrors 40, to the off-state.
In the DMD 36 shown in
k=INT(N/n),
(see
When the micromirrors 40 of adjacent recording component groups (e.g., swathes A1, A2) expose pixels in substantially the same positions on the substrate F in the direction indicated by the arrow x, if the micromirrors 40 of the swathes A1, A2 which correspond to substantially the same pixels (m1, m2 in
Such a difficulty can be avoided by shifting the positions of the micromirrors 40 that are controlled into the off-state in the direction indicated by the arrow x between the swathes A1, A2. The process of shifting the positions of the micromirrors 40 that are controlled into the off-state may be performed if the positions in the direction indicated by the arrow x of the micromirrors 40 that are controlled into the off-state are judged as overlapping each other based on the angle θ by which the swathes A1, A2 are inclined to the direction indicated by the arrow x, the interval m between the micromirrors 40 in the direction indicated by the arrow x′, and the decimated interval k.
As shown in
Alternatively, as shown in
Further alternatively, as shown in
If some of the micromirrors 40 of the DMD 36 or the laser beams L are defective, then the micromirrors 40 corresponding to the defects may preferentially be set to the off-state for thereby avoiding a defect-dependent degradation of the image quality. In this case, for example, defective mirror data representing the micromirrors 40 which correspond to the defects may be prepared in advance, and the defective mirror data may be referred to for producing mask data. The defective micromirrors 40 include micromirrors 40 which cannot be controlled to on- or off-state, micromirrors 40 which fail to provide a desired amount of light on the exposed surface, etc.
If the micromirrors 40 to be turned off are positioned at equal intervals, as described above, then small areas of the substrate F can be exposed to a more substantially uniform level of energy than if the micromirrors 40 to be turned off are positioned at random intervals. For example, variations of the line widths of the lines that are formed so as to extend in the direction indicated by the arrow y can be reduced. The lines that are formed so as to extend in the direction indicated by the arrow x can have jaggies reduced.
After the mask data have thus been established, a desired wiring pattern is recorded by way of exposure on the substrate F.
First, image data representing a desired wiring pattern are entered from image data input unit 70. The entered image data are stored in the frame memory 72, and then supplied to the resolution converter 74. The resolution converter 74 converts the resolution of the image data into a resolution depending on the resolution of the DMDs 36, and supplies the resolution-converted image data to the output data processor 76. The output data processor 76 calculates output data representing signals for selectively turning on and off the micromirrors 40 of the DMDs 36 from the resolution-converted image data, and supplies the calculated output data to the output data corrector 78.
The output data corrector 78 reads the mask data from the mask data memory 82, corrects the on- and off-states of the micromirrors 40 that are represented by the output data, using the mask data, and supplies the corrected output data to the DMD controller 42.
The DMD controller 42 energizes the DMDs 36 based on the corrected output data to selectively turn on and off the micromirrors 40. The laser beams L emitted from the light source unit 28 and introduced through the optical fibers 30 into the exposure heads 24a through 24j are applied via the rod lenses 32 and the reflecting mirrors 34 to the DMDs 36. The laser beams L selectively reflected in desired directions by the micromirrors 40 of the DMDs 36 are magnified by the first image focusing optical lenses 44, 46, and then adjusted to a predetermined beam diameter by the microaperture arrays 54, the microlens arrays 48, and the microaperture arrays 56. Thereafter, the laser beams L are adjusted to a predetermined magnification by the second image focusing optical lenses 50, 52, and then guided to the substrate F. The exposure stage 18 moves along the bed 14, during which time a desired wiring pattern is recorded on the substrate F by the exposure heads 24a through 24j that are arrayed in the direction perpendicular to the direction in which the exposure stage 18 moves.
After the wiring pattern has been recorded on the substrate F, the substrate F is removed from the exposure apparatus 10, and then the developing process, the etching process, and the peeling process are performed on the substrate F. The amount of light of the laser beam L applied to the substrate F has been adjusted in view of the processes up to the final peeling process based on the mask data. Therefore, it is possible to obtain a highly accurate wiring pattern having a desired line width.
In the above embodiment, the test patterns 90 shown in
Instead of recording the test patterns 90 on the substrate F by way of exposure, as shown in
Gray scale data 92 in n (n=1, 2, . . . ) steps shown in
Similarly for the test patterns 90, mask data may be determined by measuring resist patterns after they are developed.
Alternatively, mask data may be determined by measuring the line widths of test patterns arrayed in two different directions. For example, as shown in
One factor that is responsible for varying the line widths may be that an edge of a test pattern is recorded differently in the scanning direction and the direction perpendicular to the scanning direction. Specifically, as shown in
Test patterns may be arranged in three or more directions, rather than the two directions described above. Test patterns that are inclined to the directions indicated by the arrows x, y may also be employed. A prescribed circuit pattern may be formed as a test pattern, and the circuit pattern may be measured to correct the amounts of light.
Alternatively, a plurality of mask data depending on the types of photosensitive materials applied to substrates F may be generated and stored in the mask data memory 82. Then, mask data corresponding to the type of the photosensitive material used may be selected, and the output data may be corrected thereby.
Specifically, as shown in
For recording patterns of the same line width regardless of the different characteristics of the photosensitive materials A, B, it is necessary to establish amount-of-light correction variables depending on the photosensitive materials A, B from the characteristic curves (
According to the present embodiment, the mask data setting unit 86 sets mask data based on the amount-of-light correction variables that are determined for the photosensitive materials A, B, and stores the established mask data in the mask data memory 82. For exposing the substrate F to a desired wiring pattern, mask data corresponding to the type of the photosensitive material entered by the operator are read from the mask data memory 82, and output data supplied from output data processor 76 are corrected by the mask data. In this manner, a highly accurate wiring pattern free of line width variations can be recorded on the substrate F independently of the type of the photosensitive material.
In the above description, mask data are established in order to adjust localities with respect to the direction (the direction indicated by the arrow x) perpendicular to the scanning direction (the direction indicated by the arrow y) of the substrate F. If the mask data are established in a fixed manner, then striped irregularities may be produced in the direction indicated by the arrow y by the micromirrors 40 which are turned off at all times.
As shown in
For example, the mask data changer 100 randomly changes the array of mask data supplied from the mask data memory 82 for turning off micromirrors 40 according to the random number data supplied from the random number generator 102 without changing the number of the micromirrors 40 that are turned off, with respect to each group of the micromirrors 40 of the swathes A1, A2, . . . shown in
Alternatively, mask data may be changed at predetermined time intervals to switch between the mask data depending on the movement of the scanning position, as a result. Further alternatively, a plurality of mask data may be prepared in advance, and the mask data may be switched depending on the scanning position (scanning time). The switching between the mask data may be realized by shifting the micromirrors 40 to be turned off in the direction indicated by the arrow x depending on the scanning position in the direction indicated by the arrow y.
In the above embodiment, the output data corrector 78 corrects the output data for controlling the on- or off-state of the micromirrors 40 with the mask data to control all the micromirrors 40 by forcibly turning off the micromirrors 40 that correspond to the mask data. On the other hand, the output data corrector 78 may keep the micromirrors 40 that correspond to the mask data fixedly turned off, and then control the on- or off-state of the remaining micromirrors 40 according to the output data.
Amount-of-light locality data and/or beam diameter locality data may be acquired as locality characteristic data, and mask data may be generated based on those data.
The exposure apparatus 10 may appropriately be used to expose a dry film resist (DFR) or a liquid resist in a process of manufacturing a multilayer printed wiring board (PWB), to form a color filter or a black matrix in a process of manufacturing a liquid crystal display (LCD), to expose a DFR in a process of manufacturing a TFT, and to expose a DFR in a process of manufacturing a plasma display panel (PDP), etc., for example. The present invention is also applicable to an image recording apparatus having an ink jet recording head. The present invention is also applicable to exposure apparatus for use in the field of printing and the field of photography.
Number | Date | Country | Kind |
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2005-091623 | Mar 2005 | JP | national |
2005-159762 | May 2005 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP2006/306368 | 3/28/2006 | WO | 00 | 5/8/2008 |