Patent Application
20120003399
An overcoat layer is commonly placed on top of magnetic recording media to protect the magnetic media layers under the overcoat from corrosion. The overcoat can serve to reduce friction and wear caused by intermittent head-disc contact. One well-known overcoat material is diamond-like carbon (“DLC”) material. A typical thickness of the DLC overcoat layer ranges from 2.5 nm to 4.0 nm.
On top of this overcoat layer, there is usually a thin layer of liquid lubricant that acts as the buffer layer to further reduce corrosion, as well as to serve as a lubricating layer for the air bearing slider to glide over. A typical lubricant is a perfluoropolyether (PFPE), e.g., Fomblin® Z and Y lubricants from Solvey Solexis Inc. A typical thickness of the lubricant layer is between 1 nm and 2 nm.
As the areal density is increased in hard disk drive industry, the head-to-media spacing (HMS) must also be reduced. To this end, it is desirable to provide an alternative to the current two protection layers, e.g., lubricant and overcoat.
A method includes: forming a recording layer on a substrate and depositing a nanocomposite layer on the recording layer, the nanocomposite layer including a wear-resistant material and a solid lubricant material, wherein the atomic percentage of the solid lubricant material in the nanocomposite layer is in a range from about 5% to about 99%.
This description provides a recording media having a nanocomposite protection layer that can be used in magnetic recording applications.
The single protection layer 26 comprises a nanocomposite layer including a wear-resistant material and a solid lubricant material. In the following description the wear-resistant material is referred to as a hard material and the solid lubricant material is referred to as a soft material.
The soft material provides low friction and low surface tension, while the hard material provides high hardness and density. The total thickness of the protection layer is between about 0.5 nm and about 5 nm, and the hard material has a hardness of 10 GPa or above.
The structure illustrated in
The soft material in the protection layer 26 should have low surface tension, good lubricity, and optionally, high thermal stability. Examples of such materials include sputtered polytetrafluoroethylene (“PTFE”), CVD PTFE, and CFx film prepared by plasma enhanced chemical vapor deposition (“PECVD”). Another example is sputtered WOx. The hard material should have high density and high hardness. Examples of such materials include diamond-like carbon (“DLC”) deposited by sputter or ion beam deposition (“IBD”) or filtered cathodic arc (“FCA”) methods. Other examples include, but are not limited to, Al2O3, SiN, TiN, TiC, and YSZ.
The single protection layer 26 can be prepared by several methods. In one method, the hard and soft materials are co-deposited, e.g., co-sputtered, using two separate sputter targets. The mole ratio between the soft material and the hard material in the protection layer can range from about 0.2 to 100.
Another method uses a composite target during the deposition, e.g., sputter. Either RF or DC sputter can be utilized depending on the material choices. The mole ratio between the soft material and the hard material could range from about 0.2 to 100.
In a CVD case, two or more precursor gases can be used to achieve the desired structure. Examples of such precursor gases include: C2H2 and CF4 or CHF3 or C2F4.
Another method uses a layer-by-layer deposition, e.g., alternately sputtering a soft material and a hard material. The thickness of each layer could be in a range from about 0.2 nm to about 2 nm. The ratio between soft material and hard material could range from about 0.2 to 100. The total number of “layers” could be between 2 and 25.
The performance of the protection layer can be tailored by adjusting the ratio between the soft and hard materials to achieve performance similar to that of the previously used liquid lubricant or overcoat. In some applications, a liquid lubricant can also be added to the protection layer to achieve the desired properties.
In other applications, the protection layer can be coated on the overcoat, e.g., Ion Beam Deposition (IBD) carbon, to achieve the desired properties.
Specific examples of the application of a protection layer to a storage media are set forth below. In the examples, the Co layer serves as a testing layer. It should be noted that the Co layer in the example can be replaced by a recording layer, as defined above.
A glass substrate was sputtered with Cobalt via a conventional DC sputter to form a 10 nm thick Co layer on the substrate. Then, the sample was co-sputtered with PTFE and YSZ to form a protection layer on the Co layer. Co-sputter can be implemented by utilizing two separate RF sputter targets in a conventional sputter system that allows RF co-sputter of two targets. The sputter rates are adjusted so that the total thickness of the protection layer can range from about 2 nm to about 5 nm. The PTFE atomic percentage in the resulting film can vary from about 5% to about 99%, depending on the application.
A glass substrate was sputtered with Cobalt via a conventional DC sputter to form a 10 nm thick Co layer on the substrate. Then, the sample was co-sputtered with PTFE and Al2O3 to form a proctection layer on the Co layer. Co-sputter can be implemented with a conventional sputter system with co-sputter function. The sputter rates can be adjusted so that the total thickness of the film can range from about 2 nm to about 5 nm The PTFE atomic percentage in the resulting film can vary from about 5% to about 99%, depending on the application. The full structure magnetic media can be manufactured with the same sputter system with the procedure, as mentioned above.
A glass substrate was sputtered with Cobalt via a conventional DC sputter to form a 10 nm thick Co layer on the substrate. Then, the sample was sputtered with a composite target made of PTFE and graphite to form a protection layer on the Co layer. The fabrication process of the composite target is as follows. Machine the PTFE/graphite composite sheet to the desired geometry. Then, etch the one side of the sheet with sodium solution. Afterwards, the sheet is bonded to a copper backing plate with a conductive epoxy. The sputter rate is adjusted so that the total thickness of the film can range from about 2 nm to about 5 nm. The PTFE atomic percentage in the target can vary from about 5% to about 99%, depending on the application.
A glass substrate was sputtered with Tantalum to form a 10 nm thickness of Tantalum on the substrate. Then, the sample was sputtered via layer-by-layer deposition of PTFE and carbon alternatively. For both PTFE and carbon, the sputter rate was calibrated by an X-ray Reflectometry (XRR) measurement of a thick film. The sputter time of each target is adjusted so that the desired structure is achieved.
A glass substrate was sputtered with cobalt via a conventional DC sputter to form a 10 nm thick Co layer on the substrate. Then, the sample was sputtered with 3 nm carbon followed by 1.5 nm PTFE. The PTFE sputter condition is as follows. The RF power is 200 W, and the Ar flow rate is 112 sccm. The carbon sputter condition is as follows. The DC power is 737 W, the Ar flow rate is 39 seem, and the H2 flow rate is 19 seem. For both PTFE and carbon, the sputter rate was calibrated by XRR measurement of a thick film. The sputter time of each target is adjusted so that the desired film thickness is achieved. As a reference for Glass/Co/carbon 3 nm/PTFE 1.5 nm sample, a Glass/Co/carbon 5 nm sample was also made.
While the invention has been described in terms of several examples, it will be apparent to those skilled in the art that various changes can be made to the disclosed examples without departing from the scope of the invention, as defined by the following claims. The implementations described above and other implementations are within the scope of the claims.
This application is a divisional application of U.S. patent application Ser. No. 12/348,443, filed on Jan. 5, 2009, which is hereby incorporated by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | 12348443 | Jan 2009 | US |
| Child | 13233674 | US |
