Red light laser

Abstract

A semiconductor material vertical cavity surface emitting laser for emitting narrow linewidth light comprising a compound semiconductor material substrate and pairs of semiconductor material layers in a first mirror structure on the substrate of a first conductivity type each differing from that other in at least one constituent concentration and each first mirror pair separated from that one remaining by a first mirror spacer layer with a graded constituent concentration. An active region on the first mirror structure has plural quantum well structures separated by at least one active region spacer layer and there is a second mirror structure on the active region similar to the first but of a second conductivity type. A pair of electrical interconnections is separated by said substrate, said first mirror structure, said active region and said second mirror structure.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a general schematic layer diagram for an epitaxial layer structure for a red light emission VCSEL,

FIG. 2 shows a more general schematic layer diagram of a red light emission VCSEL structure adding electrical operation structures,

FIG. 3 shows a table setting out an epitaxial layer structure of a red light emission VCSEL embodying the present invention,

FIG. 4 shows a portions of schematic layer diagrams embodying part of the present invention,

FIG. 5 shows a portion of schematic layer diagram embodying a part of the present invention,

FIG. 6 shows another table setting out an epitaxial layer structure of an alternative red light emission VCSEL of the present invention,

FIG. 7 shows a portions of schematic layer diagrams embodying part of the present invention,

FIG. 8 shows a portion of schematic layer diagram embodying a part of the present invention,

FIG. 9 shows a schematic layer diagram of an alternative red light emission VCSEL embodying the present invention with electrical operation structures,

FIG. 10 shows a top view of the red light emission VCSEL device shown in FIG. 9,

FIG. 11 shows a schematic layer diagram of an alternative red light emission VCSEL embodying the present invention with electrical operation structures,

FIG. 12 shows a schematic layer diagram of an alternative red light emission VCSEL embodying the present invention with electrical operation structures,

FIG. 13 shows a schematic layer diagram of an alternative red light emission VCSEL embodying the present invention with electrical operation structures,

FIG. 14 shows a schematic layer diagram of an alternative red light emission VCSEL embodying the present invention,

FIG. 15 shows a layout of a monolithic integrated circuit chip with an array of the red light emission VCSEL devices of the present invention,

FIG. 16 shows a housing arrangement for an array of the red light emission VCSEL devices of the present invention,

FIG. 17 shows a housing arrangement for an array of the red light emission VCSEL devices of the present invention, and

FIG. 18 shows a housing arrangement for a red light emission VCSEL device of the present invention.

Claims

1. A semiconductor material vertical cavity surface emitting laser for emitting narrow linewidth light, said laser comprising: a compound semiconductor material substrate,at least two first mirror pairs of semiconductor material layers in a first mirror structure on said substrate of a first conductivity type each differing from that other in at least one constituent concentration and each first mirror pair separated from that one remaining by a first mirror spacer layer with a graded constituent concentration,an active region on said first mirror structure with plural quantum well structures separated by at least one active region spacer layer,at least two second mirror pairs of semiconductor material layers in a second mirror structure on said active region of a second conductivity type each differing from that other in at least one constituent concentration and each pair separated from that one remaining by a second mirror spacer layer with a graded constituent concentration, anda pair of electrical interconnections separated by said substrate, said first mirror structure, said active region and said second mirror structure.

2. The laser of claim 1 wherein said quantum well structures are under stress in one direction and said active region spacer layer is under stress in an opposite direction.