Patent Application
20120099363
This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2010-236448, filed Oct. 21, 2010, the entire contents of which are incorporated herein by reference.
Embodiments described herein relate generally to a resistance change type memory.
In recent years, much attention has been paid to a resistance change type memory such as an MRAM (Magnetoresistive RAM), an ReRAM (Resistive RAM), or a PC RAM (Phase Change RAM) that associates a change in characteristics of a memory element with data to be stored as a new memory device.
Each memory cell in the resistance change type memory includes, e.g., a resistance change type memory element and a field-effect transistor as a selecting switch.
To increase the storage density, miniaturization of the memory cell has been advanced, and sizes of the memory element and the field-effect transistor are reduced. However, long channel characteristics of the field-effect transistor may be possibly deteriorated due to a reduction in size of the field-effect transistor. As a result, characteristics of the resistance change type memory may be possibly deteriorated.
An embodiment will now be described hereinafter with reference to the accompanying drawings. In the following description, like reference numerals denote elements having the same functions and configurations, and an overlapping explanation will be given as required.
In general, according to one embodiment, a resistance change type memory includes a first bit line extending in a first direction; a first word line extending in a second direction; a first bipolar transistor which is a first drive type and has a first emitter, a first base, and a first collector; a second bipolar transistor which is a second drive type different from the first drive type and has a second emitter, a second base, and a second collector; and a first memory element which has first and second terminals and in which a change in resistance state thereof is associated with data. The first terminal is connected to the first and second emitters, the second terminal is connected to the first bit line, and the first and second bases are connected to the first word line.
A memory cell in a resistance change type memory will be described as a basic example of a resistance change type memory device according to this embodiment with reference to
A circuit configuration of a memory cell in the resistance change type memory device according to this embodiment will now be described with reference to
As shown in
In this embodiment, an MRAM (Magnetoresistive RAM) or an STT-RAM (Spin Transfer Torque RAM) is exemplified as the resistance change type memory.
In the MRAM, the resistance change type memory element 1 is, e.g., a magnetoresistive element (magnetoresistive effect element).
Each of
The MTJ element 1 has a first magnetic layer 10A having an invariable (fixed) direction of magnetization, a second magnetic layer 12A having a variable direction of magnetization, and a non-magnetic layer 11A between the two magnetic layers 10A and 12A. The two magnetic layers 10A and 12A and the non-magnetic layer 11A form a magnetic tunnel junction. This magnetic tunnel junction is provided between two electrodes 18 and 19.
In this embodiment, the magnetic layer 10A having the invariable direction of magnetization is called a reference layer 10A, and the magnetic layer 12A having the variable direction of magnetization is called a recording layer 12A. The reference layer 10A is also called a magnetization invariable layer, a pin layer, or a pinned layer, and the recording layer 12A is also called a magnetization free layer and a free layer.
The direction of magnetization in the recording layer 12A changes by a spin transfer magnetization switching system. That is, the direction of magnetization in the recording layer 12A changes when spin-polarized electrons included in currents IW-AP and IW-P flowing through the element 1 function with respect to magnetization (spin) of the recording layer 12A.
A phrase “the direction of magnetization in the reference layer 10A is invariable” or “the direction of magnetization in the reference layer 10A is fixed” means that the direction of magnetization in the reference layer 10A does not change when an STT switching current (a threshold current for switching of magnetization) used for switching of the magnetizing direction of the recording layer 12A is flowed through the reference layer 10A. Therefore, in the MTJ element 1, a magnetic layer having a large threshold current for switching of magnetization is used as the reference layer 10A, and a magnetic layer having a smaller reference threshold current than that of the reference layer 10A is used as the recording layer 12A. As a result, the MTJ element 1 including the recording layer 12A having the variable direction of magnetization and the reference layer 10A having the invariable direction of magnetization is formed.
When changing the direction of magnetization in the recording layer 12A and the direction of magnetization in the reference layer 10A from an anti-parallel state to a parallel state by the spin transfer magnetization switching system, i.e., when equalizing the direction of magnetization in the recording layer 12A and the direction of magnetization in the reference layer 10A, the current IW-P flowing from the recording layer 12A toward the reference layer 10A is supplied to the MTJ element 1. In this case, electrons move from the reference layer 10A toward the recording layer 12A through the tunnel barrier layer 11A. A majority of the electrons (spin-polarized electrons) that have passed through the reference layer 10A and the tunnel barrier layer 11A have the same direction as the direction of magnetization (spin) of the reference layer 10A. A spin angular momentum (spin torque) of the spin-polarized electrons is applied to the magnetization of the recording layer 10A, thereby reversing the direction of magnetization in the recording layer 12A. When the magnetization arrangement of the two magnetic layers 10A and 12A is a parallel arrangement, the MTJ element 1 has the smallest resistance value. For example, data “0” is assigned to the MTJ element 1 in which the magnetization arrangement is the parallel arrangement.
When changing the direction of magnetization in the recording layer 12A and the direction of magnetization in the reference layer 10A from the parallel state to the anti-parallel state, i.e., when setting the direction of magnetization in the recording layer 12A to be opposite to the direction of magnetization in the reference layer 10A, the current IW-AP flowing from the reference layer 10A to the recording layer 12A is supplied to the MTJ element. In this case, the electrons move from the recording layer 12A toward the reference layer 10A. The electrons having the spin which is anti-parallel to the direction of magnetization in the reference layer 10A are reflected by the reference layer 10A. The reflected electrons are injected into the recording layer 12A as spin-polarized electrons. The spin angular momentum of the spin-polarized electrons (the reflected electrons) is applied to the magnetization of the recording layer 12A, and the direction of magnetization in the recording layer 12A is changed to be opposite (anti-parallel arrangement) to the direction of magnetization of the reference layer 10A. When the magnetization arrangement of the two magnetic layers 10A and 12A is the anti-parallel arrangement, the MTJ element 1 has the largest resistance value. For example, data “1” is assigned to the MTJ element 1 in which the magnetization arrangement is the anti-parallel arrangement.
The bipolar transistors 2 and 3 in the memory cell MC are used as switching devices configured to supply a current to the MTJ element 1.
One bipolar transistor 2 of the two bipolar transistors 2 and 3 in the memory cell MC is an NPN-type (a first drive type) bipolar transistor 2, and the other bipolar transistor 3 is a PNP-type (a second drive type) bipolar transistor 3.
To the memory cell MC are connected one word line WL, one bit line BL, and two power supply lines SL1 and SL2.
A connection relationship between the respective devices 1, 2, and 3 in the memory cell MC and the respective interconnects WL, BL, SL1, and SL2 is as follows.
An emitter 21(E) of the NPN-type bipolar transistor 2 is connected to an emitter 31(E) of the PNP-type bipolar transistor 3. The emitter 21 and the emitter 31 connected to each other form a connection node N1. The connection node N1 will be also referred to as a common emitter hereinafter.
A connector 22(C) of the NPN-type bipolar transistor 2 is connected to the power supply line SL1. A collector 32(C) of the PNP-type bipolar transistor 3 is connected to the power supply line SL2. A connection node N2 is formed between the collector 22 of the NPN-type bipolar transistor 2 and the power supply line SL1, and a connection node N3 is formed between the collector 32 of the PNP-type bipolar transistor and the power supply line SL2.
A base 23(B) of the NPN-type bipolar transistor 2 is connected to a base 33(B) of the PNP-type bipolar transistor 3. The bases 23 and 33 connected to each other form a connection node N4. The connection node N4 will be also referred to as a common base hereinafter.
The bit line BL extends in, e.g., y-direction (a first direction). The word line WL extends in x-direction (a second direction) crossing the y-direction.
The two power supply lines SL1 and SL2 extend in, e.g., the x-direction. However, the extending direction of the power supply lines SL1 and SL2 may be the y-direction. The power supply line SL1 is connected to a high-potential end (a power supply Vdd), and the power supply line SL2 is connected to a low-potential end (a ground end). A potential (a voltage) of the power supply line SL1 is set to a power supply potential Vdd, and a potential of the power supply line SL2 is set to a ground potential Vss. The power supply line SL2 set to the ground potential will be referred to as a ground line SL2 hereinafter.
One end (an electrode) of the MTJ element 1 as the resistance change type memory element is connected to the connection node (the common emitter) N1 of the two bipolar transistors 2 and 3. The other end of the MTJ element 1 is connected to the bit line BL. The emitters 21 and 31 of the bipolar transistors 2 and 3 are connected to the bit line BL through the MTJ element 1.
The word line WL is connected to the connection node (the common base) N4 of the two bipolar transistors 2 and 3. The bases 23 and 33 of the NPN-type and PNP-type bipolar transistors 2 and 3 are connected to the word line WL.
In the resistance change type memory device according to this embodiment, controlling a potential of the bit line BL connected to the emitters 21 and 31 of the two bipolar transistors 2 and 3 and a potential of the word line WL connected to the bases 23 and 33 of the bipolar transistors 2 and 3 enables the write currents IW-P and IW-AP used for changing a resistance state of the resistance change type memory element (e.g., the MTJ element) 1 to bi-directionally flow through this element 1.
By controlling of the potentials in the bit line BL and the word line WL, one bipolar transistor is turned on, and the other bipolar transistor is turned off. For example, when the PNP-type bipolar transistor 3 is turned on, a current flowing from the bit line BL side to the connection node N1 side is supplied to the MTJ element 1. When the NPN-type bipolar transistor 2 is turned on, a current flowing from the connection node N1 side to the bit line BL side is supplied to the MTJ element 1.
When the field-effect transistor is used in a memory cell, an output current from the field-effect transistor is decreased as a size of the field-effect transistor is reduced based on miniaturization of the memory cell. As a result, a margin for a threshold current that changes a resistance state of the MTJ element may not be possibly assured.
When the bipolar transistors 2 and 3 are provided in place of the field-effect transistor in the memory cell like this embodiment, an output current from each of the bipolar transistors 2 and 3 is set in accordance with a potential difference between terminals of the bipolar transistors 2 and 3 or impurity concentration in each semiconductor layer to form the bipolar transistors 2 and 3. Therefore, when the potential difference or the impurity concentration is appropriately set, each of the bipolar transistors 2 and 3 can output a write current higher than a switching threshold current of the MTJ element 1, whereby the write current having a margin assured for the switching threshold current of the MTJ element 1 can be supplied to the MTJ element 1 in the memory cell.
Considering a variation in characteristics (the switching threshold current) of the MTJ element when the memory cells MC form a memory cell array, it is effective to assure a margin for an upper limit value/lower limit value of the write current based on the output current from each of the bipolar transistors 2 and 3 like this embodiment. Therefore, the reliability of operations of the memory can be improved in this embodiment.
Further, deterioration of electrical characteristics of the bipolar transistor brought about by the miniaturization of the memory cell, such as a short channel effect of the field-effect transistor, hardly appears as compared with the field-effect transistor. Therefore, in this embodiment, when the bipolar transistor is used as a device that controls supply of a current to the resistance change type memory element 1 in place of the field-effect transistor, an adverse effect caused due to the miniaturization of the memory cell can be reduced.
An operation of the resistance change type memory (e.g., an MRAM) according to this embodiment will now be described with reference to
(b-1) Write Operation
Writing data in the resistance change type memory element (the MTJ element) in the memory cell MC will now be described with reference to
Here, description will be given as to an example that the recording layer 12A of the MTJ element 1 is arranged on the bit line BL side and the reference layer 10A of the MTJ element 1 is arranged on the connection node (the common emitter) N1 side.
As described above, when writing data into the MTJ element 1 by the spin transfer magnetization switching system, the write current must be bi-directionally flown through the MTJ element 1 in accordance with the data that is to be written into the MTJ element 1.
An example of changing the magnetization arrangement of the MTJ element 1 from the anti-parallel state (AP state) to the parallel state (P state) will be first explained with reference to
When changing the magnetization arrangement of the two magnetic layers (the reference layer/the recording layer) 10A and 12A in the MTJ element 1 from AP state to P state, electrons are injected into the recording layer 12A from the reference layer 10A. That is, the write current IW-P required to change the magnetization arrangement to the parallel state is flowed from the recording layer 12A to the reference layer 10A in the opposite direction of a moving direction of the electrons.
In this case, since the write current IW-P is a current that flows from the bit line BL side toward the connection node N1, the NPN bipolar transistor 2 is turned off, and the PNP-type bipolar transistor 3 is turned on.
To turn on/off the bipolar transistors 2 and 3, the potentials in the bit line BL and the word line WL are controlled.
The potential in the word line WL corresponds to the base voltage Vb of each of the transistors 2 and 3. When turning off the NPN-type bipolar transistor 2 and turning on the PNP-type bipolar transistor 3, the base voltage (the potential in the node N4) of each of the bipolar transistors 2 and 3 is adjusted to be smaller than the emitter voltage (the potential in the node N1) of each of the bipolar transistors 2 and 3. That is, the potential in the word line WL is adjusted to be lower than the potential in the bit line BL.
In the NPN-type bipolar transistor 2, when the base voltage Vb is lower than the emitter voltage Ve, the voltage Veb between the emitter (E) and the base (B) in the NPN-type bipolar transistor 2 becomes a positive voltage. Therefore, a reverse bias is applied to a PN junction associated with the emitter-base of the NPN-type bipolar transistor 2, and the NPN-type bipolar transistor 2 is turned off.
Therefore, when changing the magnetization arrangement of the MTJ element 1 from AP state to P state, it is sufficient to consider operations of the MTJ element 1 and the PNP-type bipolar transistor 3 under conditions that the potential in the word line WL as the base potential Vb is smaller than the potential in the node N1 as the emitter voltage Ve (i.e., Vb<Ve).
The emitter voltage Ve corresponds to a voltage that is applied from the bit line BL through the MTJ element 1. Therefore, an application voltage (e.g., the voltage Vdd) for the bit line BL drops due to a resistance value of the MTJ element 1, and hence the emitter voltage Ve becomes smaller than the voltage Vdd. Furthermore, since the emitter voltage Ve is dependent on an amount of a current flowing through the connection node (the common emitter) N1, the emitter voltage Ve is modulated by the base voltage Vb.
Description will now be given as to a relationship between the base voltage Vb and the emitter voltage Ve and a relationship between the base voltage Vb and an emitter current Ie in the PNP-type bipolar transistor 3 in
Each of
A collector voltage Vc of the PNP-type bipolar transistor 3 is set to 0 V, and the base voltage Vb is changed from 0 V to the power supply voltage Vdd (approximately 1.0 V to 2.0 V). The potential in the bit line BL is set to the voltage Vdd. The resistance value of the MTJ element 1 is changed as each parameter. As the resistance values of the MTJ element 1, 10 kΩ, 15 kΩ, 20 kΩ, and 30 kΩ are assumed, respectively.
As shown in
When the resistance value of the MTJ element 1 increases, an absolute value of the emitter current Ie in the PNP-type bipolar transistor 3 is reduced.
Moreover, as shown in
As represented by the simulation result in each of
Therefore, when changing the magnetization arrangement of the MTJ element from AP state to P state, the potential in the word line WL is adjusted to approximately 0 V with respect to the potential in the bit line BL having the power supply voltage Vdd (e.g., approximately 1.0 V to 2.0 V). As a result, the efficiency for writing data by using the output current from the PNP-type bipolar transistor 3 can be improved.
An example of changing the magnetization arrangement of the MTJ element 1 from the parallel state (P state) to the anti-parallel state (AP state) will now be described with reference to
When changing the magnetization arrangement of the MTJ element 1 from P state to AP state, electrons are injected from the recording layer 12A to the reference layer 10A. That is, the write current IW-AP required for changing the magnetization arrangement to AP state is flowed from the reference layer 10A to the recording layer 12A.
As shown in
The write current IW-AP is a current flowing from the connection node N1 side toward the bit line BL side. Therefore, in the case of this operation, the NPN-type bipolar transistor 2 is turned on, and the PNP-type bipolar transistor 3 is turned off.
The potential in the bit line BL is set to an “L” level (0 V), and the potential in the power supply line SL1 is set to an “H” level (Vdd). As a result, the current IW-AP is flowed from the power supply line SL1 toward the bit line BL.
The base voltage Vb of each of the bipolar transistors 2 and 3, i.e., the potential in the word line WL is set in such a manner that the NPN-type bipolar transistor 2 alone is turned on and the PNP-type bipolar transistor 3 is turned off.
When the base voltage Vb (the potential in the word line WL) is higher than the emitter voltage (the potential in the node N1) Ve in the PNP-type bipolar transistor 3, the voltage Veb between the emitter and the base of the PNP-type bipolar transistor becomes a negative voltage. That is, a reverse bias is applied to the PN junction associated with the emitter-base of the PNP-type bipolar transistor 3, and the PNP-type bipolar transistor 3 is turned off.
Therefore, when changing a relative relationship of the magnetization arrangement of the MTJ element 1 from P state to AP state, it is sufficient to consider operations of the MTJ element 1 and the NPN-type bipolar transistor 2 under conditions that the base potential Vb (the potential in the word line WL) is higher than the emitter voltage Ve (the potential in the node N1) (i.e., Vb>Ve).
Here, the emitter voltage Ve is higher than the ground potential Vss due to a voltage drop arising from the MTJ element. Additionally, the emitter voltage Ve is modulated by the base voltage Vb since it is dependent on an amount of a current flowing through the node N1.
Relationships between the base voltage Vb and the emitter voltage Ve and between the base voltage Vb and the emitter current Ie in the NPN-type bipolar transistor 2 in
Each of
The collector voltage Vc of the NPN-type bipolar transistor 2 is set to the power supply voltage Vdd (approximately 1.0 V to 2.0 V), and the base voltage Vb is changed from 0 V to the power supply voltage Vdd. The potential in the bit line BL is set to the ground potential (0 V). Moreover, the resistance value of the MTJ element 1 is changed as each parameter. The resistance value of the MTJ element 1 is set to 10 kΩ, 15 kΩ, 20 kΩ, and 30 kΩ, respectively.
As shown in
Moreover, as shown in
As represented by the simulation result in each of
Therefore, when changing the magnetization arrangement of the MTJ element from P state to AP state, it is preferable to set the potential in the word line WL to approximately the power supply voltage Vdd with respect to the potential in the bit line BL which is approximately equal to the ground potential. As a result, the efficiency of writing data by using an output from the NPN-type bipolar transistor 2 can be improved.
In operations of two bipolar transistors which are of a regular push-pull type, a voltage between an emitter and a base and a voltage between a base and a collector are fixed.
On the other hand, in the NPN-type bipolar transistor 2 and the PNP-type bipolar transistor 3 in the memory cell MC, the base voltage is modulated at the time of operation, and the voltage between the emitter and the base and the voltage between the base and the collector vary depending on a direction and an intensity of the current supplied to the resistance change type memory element.
In the memory according to this embodiment, each of the bipolar transistors 2 and 3 can output the write current higher than the switching threshold current of the MTJ element 1 and supply the write current having a margin assured for the switching threshold current of the MTJ element 1 to the MTJ element in the memory cell. Further, assuring the margin of the write current results in improvement of the reliability of the write operation.
As described above, in the resistance change type memory according to this embodiment, providing the two bipolar transistors 2 and 3 in the memory cell enables generating the currents IW-P and IW-AP bi-directionally flowing with respect to the MTJ element in accordance with data to be written.
(b-2) Read Operation
A data reading operation of the resistance change type memory according to this embodiment will now be described with reference to
In the read operation of the MRAM, a current is flowed through the MTJ element 1 like the example of writing data, but a current value of the read current IR is set to be smaller than the switching threshold current of the MTJ element 1 so that data stored in the MTJ element 1 cannot be destroyed (cannot be rewritten).
For example, as shown in
In this case, since the emitter voltage Ve is higher than the base voltage Vb, the PNP-type bipolar transistor 3 is turned on, and the NPN-type bipolar transistor 2 is turned off.
An intensity of the current flowing through the bit line BL or an intensity of the potential in the read node N3 varies in accordance with a resistance value of the MTJ element 1. This intensity of the current/potential is detected, data stored in the MTJ element 1 is judged.
Here, an example of supplying the read current IR to the MTJ element by using the PNP-type bipolar transistor 3 which is in the ON state will be described. It is to be noted that an output current from the NPN-type bipolar transistor 2 may be determined as the read current IR by controlling the potentials in the bit line and the word line, turning off the PNP-type bipolar transistor 3, and turning on the NPN-type bipolar transistor 2. However, a current value of the read current from the NPN-type bipolar transistor 2 is set to a value smaller than the switching threshold current of the MTJ element 1 in the read operation.
Even in a situation that the two bipolar transistors 2 and 3 are provided in the memory cell MC in this manner, an intensity of an output current from each bipolar transistor can be controlled by controlling the potentials in the bit line BL and the word line WL. Therefore, in the memory according to this embodiment, an erroneous write operation caused by the read current IR can be suppressed to read data from the MTJ element 1.
Therefore, in the resistance change type memory according to this embodiment, data can be read from the MTJ element in the memory cell MC including the two bipolar transistors 2 and 3.
(b-4) Data Holding Operation
A data holding operation of the resistance change type memory according to this embodiment will now be described with reference to
For example, when setting the memory cell to a data holding state (which will be also referred to as a standby state), the potential (the voltage) in the power supply line SL1 is set to the power supply potential Vdd, and the potential in the ground line SL2 is set to the ground potential Vss.
When the potentials in the emitters 21 and 31 of the NPN-type/NPN-type bipolar transistors 2 and 3 are substantially equal to the potentials in the bases 23 and 33 of the NPN-type/PNP-type bipolar transistors 2 and 3, i.e., when a potential difference between the connection node N1 and the connection node N4 is substantially 0, both the NPN-type bipolar transistor 2 and the PNP-type bipolar transistor 3 are turned off.
When the potential applied to the bit line BL is set to the same intensity as that of the potential applied to the word line WL, the current is hardly supplied to the MTJ element 1. Therefore, when the potential difference between the bit line BL and the word line WL is set to 0, data can be held in the MTJ element 1 without writing data into the MTJ element 1.
Incidentally, in a case of a bipolar transistor using silicon (Si), each bipolar transistor 2 or 3 is not turned on unless a voltage of 0.6 V or above is applied in a forward direction with respect to a pn junction between an emitter (E) and a base (B).
The potentials in the bit line BL and the word line WL may be set to 0 V to set a potential difference between the bit line and the word line to 0 V. However, it is preferable to supply an intermediate potential (which is Vdd/2 in the following description) of approximately Vdd/3 to Vdd/2 to both the bit line BL and the word line WL. As a result, in the data holding state of the memory cell MC, the bit line BL and the word line WL are charged with the intermediate potential Vdd/2. Therefore, a reduction in operating speed of the memory caused by interconnect delay can be suppressed.
When the memory cell array is formed by using the memory cells MC according to this embodiment (see
A structure of the memory cell MC of the resistance change type memory according to this embodiment will now be described with reference to
Structural Example 1 of the memory cell MC of the resistance change type memory according to this embodiment will now be described with reference to
In the memory cell MC shown in
As shown in
The two bipolar transistors 2 and 3 in the memory cell MC are formed of impurity semiconductor layers 21, 22, 23, 31, 32, and 33 in a semiconductor substrate 50.
The semiconductor substrate 50 is, e.g., a p-type (a second conductivity type) semiconductor substrate (a p-type silicon substrate).
Isolation insulating films 51A and 51B are buried in trenches in the semiconductor substrate 50. The isolation insulating films 51A and 51B partition the bipolar transistor forming regions and electrically separate an NPN-type bipolar transistor forming region (a first semiconductor region) from a PNP-type bipolar transistor forming region (a second semiconductor region).
An n-type (a first conductivity type) well region 22 is provided in the semiconductor substrate 50.
The n-type well region 22 is used as the collector (C) of the NPN-type bipolar transistor 2. In the NPN-type bipolar transistor forming region, the p-type impurity layer 23 is provided in the n-type well region 22. The p-type impurity layer 23 is used as the base (B) of the NPN-type bipolar transistor 2. The n+-type impurity layer 21 is provided in the p-type impurity layer 23. The n+-type impurity layer 21 is used as the emitter (E) of the NPN-type bipolar transistor 2.
In the transistor forming region where the PNP-type bipolar transistor 3 is formed, the p-type well region 32 is provided in the n-type well region 22. The p-type well region 32 is used as the collector (C) of the PNP-type bipolar transistor 3. The n-type impurity layer 33 is provided in the p-type well region 32. The n-type impurity layer 33 is used as the base (B) of the PNP-type bipolar transistor 3. The p+-type impurity layer 31 is provided in the n-type impurity layer 33. The p+-type impurity layer 31 is used as the emitter (E) of the PNP-type bipolar transistor 3.
The n-type well region 22 as the collector of the NPN-type bipolar transistor 2 will be referred to as the n-type collector layer 22 hereinafter. The p-type impurity layer 23 as the base of the NPN-type bipolar transistor 2 will be referred to as the p-type base layer 23. Further, the n+-type impurity layer 21 as the emitter of the NPN-type bipolar transistor 2 will be referred to as the n+-type emitter layer 21.
The p-type well region 32 as the collector of the PNP-type bipolar transistor 3 will be referred to as the p-type collector layer 32. The n-type impurity layer 33 as the base of the PNP-type bipolar transistor 2 will be referred to as the n-type base layer 33. The p+-type impurity layer 31 as the emitter of the PNP-type bipolar transistor 3 will be referred to as the p+-type emitter layer 31.
In the NPN-type bipolar transistor forming region, the p-type base layer 23 is interposed between a bottom surface of the n+-type emitter layer 21 and an upper surface of the n-type collector layer 22. An upper surface of the p-type base layer 23 is exposed on the surface of the substrate 50, and the upper surface of the p-type base layer 23 is adjacent to an upper surface of the n+-type emitter layer 21 in the y-direction on the surface of the substrate 50.
In the PNP-type bipolar transistor forming region, the n-type base layer 33 is interposed between a bottom surface of the p+-type emitter layer 31 and an upper surface of the p-type collector layer 32. An upper surface of the n-type base layer 33 is exposed on the surface of the substrate 50, and the upper surface of the n-type base layer 33 is adjacent to an upper surface of the p+-type emitter layer 31 in the y-direction on the surface of the substrate 50.
The two emitter layers 21 and 31 are adjacent to each other in the y-direction to sandwich the isolation insulating film 51B therebetween.
A contact plug 61B is provided on the n+-type emitter layer 21. Further, a contact plug 61A is provided on the p+-type emitter layer 31. The contact plugs 61A and 61B are buried in a first interlayer insulating film (e.g., SiO2) 52 that covers the surface of the semiconductor substrate 50. For example, tungsten (W) or molybdenum (Mo) is used for the contact plugs 61A and 61B.
An intermediate interconnect 63 is provided on the two contact plugs 61A and 61B. The intermediate interconnect 63 is continuous on the two contact plugs 61A and 61B to connect the two contact plugs 61A and 61B to each other. The n-type emitter layer 21 is electrically connected to the p-type emitter layer 31 by the contact plugs 61A and 61B and the intermediate interconnect line 63. As a result, the emitters of the two bipolar transistors 2 and 3 are connected to each other. The intermediate interconnect line 63 is formed by using a conductor, e.g., aluminum (Al), copper (Cu), titanium (Ti), or a titanium nitride (TiN).
The MTJ element 1, the intermediate interconnect line 63, and a via plug 64 are covered with a second interlayer insulating film 53. The bit line BL is provided on the via plug 64 and the interlayer insulating film 53.
The resistance change type memory element (e.g., the MTJ element) 1 is provided on the intermediate interconnect 63. The via plug 64 is provided on the MTJ element 1. The bit line BL is connected to the other end of the MTJ element 1 through the via plug 64. One end of the MTJ element 1 is connected to the n-type emitter layer 21 and the p-type emitter layer 31 through the intermediate interconnect 63 and the contact plugs 61A and 61B.
For example, according to the connection relationship of the MTJ element 1, the reference layer 10A is arranged on the intermediate interconnect 63 through the lower electrode 18. The tunnel barrier layer 11A is arranged on the reference layer 10A. The recording layer 12A is arranged on the tunnel barrier layer 11A. Furthermore, the via plug 64 is provided on the upper electrode 19 the recording layer 12A. The reference layer 10A is connected to the emitter layers 21 and 31 through the intermediate interconnect 63 and the contact plugs 61A and 61B, and the recording layer 12A is connected to the bit line BL through the via plug 64.
The MTJ element 1 is arranged above the isolation insulating film 51B to separate the emitter layers 21 and 31 from each other, for example.
A first interconnect 29 is provided on the p-type base layer 23. A second interconnect 39 is provided on the n-type base layer 33. The interconnects 29 and 39 are directly in contact with the base layers 23 and 33. The interconnects 29 and 39 are laid out on the semiconductor substrate 50 to sandwich the contact plugs 61A and 61B in the y-direction.
The interconnects 29 and 39 extend in, e.g., the x-direction. The interconnects 29 and 39 are formed by using, e.g., polysilicon, silicide, a metal, or a laminated body including these materials.
The two interconnects 29 and 39 are connected to each other through the contact plugs or the intermediate interconnect on at least one end of the extending direction of these interconnects. The interconnects 29 and 39 are interconnects to connect, e.g., the base layers 23 and 33 to the word lines. Therefore, the interconnects 29 and 39 substantially function as the word lines WL and WL′, and the two interconnects 29 and 39 form one pair of word lines. The interconnects 29 and 39 will be also referred to as the word lines WL and WL′ hereinafter for ease of explanation. It is to be noted that a sidewall insulating film may be provided on a side surface of each of the interconnects 29 and 39.
The n-type collector layer 22 and the p-type collector layer 32 are connected to the power supply line SL1 on the high-potential (Vdd) side and the ground line SL2 on the low-potential (Vss) side through a triple well structure. The n-type well region 22 as the n-type collector layer 22 is also used as the power supply line SL1, and the p-type well region 32 as the p-type collector layer 32 is also used as the ground line SL2.
In the configuration shown in
A manufacturing method of the memory cell according to this Structural Example 1 will be described later.
As explained above, in this Structural Example 1, the bipolar transistors 2 and 3 in the memory cell MC have the planar structure. Therefore, the bipolar transistors 2 and 3 of the memory cell MC according to this Structural Example 1 can be formed by using the impurity semiconductor regions 21, 22, 23, 31, 32, and 33 provided in the semiconductor substrate 50. Therefore, the bipolar transistors 2 and 3 of the memory cell MC can be formed by using a relatively simple manufacturing process, thereby reducing a manufacturing cost.
Structural Example 2 of the memory cell MC in the resistance change type memory according to this embodiment will now be described with reference to
In the memory cell MC depicted in
The bipolar transistors 2 and 3 having the lateral structure are provided on an SOI substrate 54.
The SOI substrate 54 is formed of an insulating film 56 on a semiconductor substrate 55 and a semiconductor layer (which will be referred to as an SOI layer) 57 on the insulating film 56.
In the memory cell using the bipolar transistors having the lateral structure, if a well region is provided in the SOI layer 57, a leak current cannot be reduced. Therefore, by a usage of an intrinsic semiconductor layer for the SOI layer 57, impurity layers are electrically separated from each other. The impurity concentration of the intrinsic SOI layer 57 is sufficiently lower than the impurity concentration of each of a collector layer, a base layer, and an emitter layer.
Collector layers 22 and 32, base layers 23 and 33, and emitter layers 21 and 31 of the respective bipolar transistors 2 and 3 are provided in the SOI layer 57.
A region AA in which the respective bipolar transistors 2 and 3 are formed is continuous in the y-direction. The bipolar transistor forming region AA is sandwiched between two isolation regions STI in the x-direction.
A silicide layer 69A is provided on the n-type collector layer 22 of the NPN-type bipolar transistor 2. A contact plug 65A is provided on the silicide layer 69A. The contact plug 65A is connected to an interconnect 66A. The interconnect 66A is connected to, e.g., a power supply Vdd. The interconnect 66A is used as a power supply line SL1. The interconnect 66A is made of, e.g., a metal. The interconnect 66A extends in, e.g., the x-direction. In this manner, the n-type collector layer 22 is connected to the metal power supply line SL1.
The p-type base layer 23 of the NPN-type bipolar transistor 2 is provided between the n-type collector layer 22 and the n+-type emitter layer 21 in the SOI layer 57. A interconnect 29 is provided on the p-type base layer 23.
A silicide layer 69B is provided on the p-type collector layer 32 of the PNP-type bipolar transistor 3. A contact plug 65B is provided on the silicide layer 69B. The contact plug 65B is connected to an interconnect 66B. The interconnect 66B is connected to, e.g., a ground potential Vss, and the interconnect 66B is used as a ground line SL2. The interconnect 66B is made of, e.g., a metal. The interconnect 66B extends in, e.g., the x-direction. In this manner, the p-type collector layer 32 is connected to the metal ground line SL2.
The n-type base layer 33 of the PNP-type bipolar transistor 3 is provided between the p-type collector layer 32 and the p+-type emitter layer 31 in the SOI layer 57. A interconnect 39 is provided on the n-type base layer 33.
The n-type emitter layer 21 and the p-type emitter layer 31 are adjacent to each other in the y-direction in the SOI layer 57. The two emitter layers 21 and 31 are sandwiched between the two base layers 23 and 33 in the y-direction. It is to be noted that the n+-type emitter layer 21 is directly in contact with the p+-type emitter layer 31 in the example shown in
A silicide layer 69C is provided on the n-type emitter layer 21 and the p-type emitter layer 31. The silicide layer 69 is continuous on the n-type emitter layer 21 and on the p-type emitter layer 31 in the y-direction. One contact plug 65C is provided on the two emitter layers 21 and 31 through the silicide layer 69C.
An intermediate interconnect 66C is provided on the contact plug 65C. The MTJ element (the resistance change type memory element) 1 is provided on the intermediate interconnect 66C. The MTJ element 1 is connected to the bit line BL through a via plug 67.
In this manner, the two emitter layers 21 and 31 are connected to the MTJ element 1 through the common contact plug 65C.
The contact plug 65C on the emitter layers 21 and 31 is laid out on the SOI substrate 54 in such a manner that the contact plug 65C is sandwiched between the interconnects 29 and 39 on the two base layers 23 and 33 in the y-direction.
The MTJ element 1 is arranged above the two emitter layers 21 and 31 to cut across the two emitter layers 21 and 31.
The interconnects 29 and 39 on the base layers 23 and 33 are covered with a sidewall insulating film 59. The sidewall insulating film 54 is formed by using, e.g., a silicon nitride film or a silicon oxide film. For example, the sidewall insulating film 54 is formed on each of the interconnects 29 and 39 in such a manner that a lower end of the sidewall insulating film 54 cuts across a boundary portion between the base layer 23 or 33 and the collector layers 22 and 32. For example, the sidewall insulating film 54 is formed on the interconnects 29 and 39 in such a manner that the lower end of the sidewall insulating film 54 cuts across a boundary portion between the base layers 23 and 33 and the emitter layers 21 and 31. When the sidewall insulating film 54 covers each boundary between the base layer 23 or 33 and the other layers 21, 31, 22 or 32 in this manner, the base layers 23 and 33 can be prevented from being electrically connected to the silicide layers 69A, 69B, and 69C.
It is preferable to reduce dimensions of the base layers 23 and 33 in the y-direction in order to improve characteristics of the bipolar transistors Tr. When the dimensions of the collector layers 22 and 33 in the y-direction or the dimensions of the base layers 23 and 33 in the y-direction are represented by a unit “F”, the dimensions of the emitter layers 21 and 31 in the y-direction are represented by, e.g., “F/2”.
To prevent the interconnects 29 and 39 from coming into contact with the emitter layers/collector layers, it is preferable for the dimensions of the interconnects (the word lines) 29 and 39 in the y-direction to be not greater than the dimensions of the base layers 23 and 33 in the y-direction.
A manufacturing method of the memory cell according to this Structural Example 2 will be described later.
The bipolar transistors 2 and 3 having the lateral structure do not supply currents to the MTJ element 1 through a well region, as opposed to the bipolar transistors having the planar structure. Therefore, the two bipolar transistors 2 and 3 in the memory cell MC do not have to be separated from each other through an isolation region (an isolation insulating film). Therefore, an occupied area (a cell size) of the memory cell MC can be reduced by decreasing an area of the isolation region.
Furthermore, differing from the example using the bipolar transistors having the planar structure, the bipolar transistors 2 and 3 having the lateral structure according to this Structural Example 2 do not have to separate a well region at a deep position in the substrate. Therefore, when the bipolar transistors having the lateral structure are used, a dimension for separating the well region (an element separation width) does not have to be assured, and a dimension of the memory cell MC in the y-direction can be reduced.
As described above, in this Structural Example 2, the bipolar transistors 2 and 3 in the memory cell MC have the lateral structure. Therefore, the bipolar transistors 2 and 3 of the memory cell MC according to this Structural Example 2 enable the cell size of the memory cell to be reduced as compared with the bipolar transistors 2 and 3 having the planar structure.
A memory cell array using the memory cell MC will now be explained as an example of the resistance change type memory according to this embodiment with reference to
A circuit configuration of a memory cell array of the resistance change type memory according to this embodiment will be explained with reference to
As shown in
Additionally, bit lines BL0, BL1, and BL2 and word lines WL0, WL1, and WL2 are provided in the memory cell array.
The bit lines BL0, BL1, and BL2 extend in the y-direction (a column direction). The respective bit lines BL0, BL1, and BL2 are adjacent to each other in the x-direction (a row direction). The word lines WL0, WL1, and WL2 extend in the x-direction. The respective word lines WL1, WL2, and WL3 are adjacent to each other in the y-direction.
Power supply lines SL1 and SL3 and ground lines SL0 and SL2 extend in, e.g., the x-direction.
A power supply voltage Vdd is applied to the power supply lines SL1 and SL3, and a ground potential Vss is applied to the ground lines SL0 and SL2.
In the memory cell array, the memory cells MC1, MC2, MC3, and MC4 aligned in the y-direction (a common column) are connected to the common bit lines BL0, BL1, and BL2. Further, in the memory cell array, the memory cells MC1, MC2, MC3, and MC4 aligned in the x-direction (a common row) are connected to the common word lines WL0, WL1, and WL2.
Furthermore, in the memory cell array, the memory cells aligned in the y-direction (the common row) are connected to the common power supply lines SL1 and SL3 and the common ground lines SL0 and SL2. The memory cells MC1, MC2, MC3, and MC4 adjacent to each other in the y-direction share the power supply lines SL1 and SL3 and the ground lines SL0 and SL2.
For example, the power supply line SL1 is shared by the memory cells MC1 and the memory cell MC4 which are adjacent to each other in the y-direction. An NPN-type bipolar transistor 21 in the memory cell MC1 is adjacent to an NPN-type bipolar transistor 22 in the memory cell MC2 in the y-direction. A collector of the NPN-type bipolar transistor 21 in the memory cell MC1 and a collector of an NPN-type bipolar transistor 24 in the memory cell MC4 are connected to the common power supply line SL1. The collector of the NPN-type bipolar transistor 21 in the memory cell MC1 is connected to a collector of the NPN-type bipolar transistor 22 in the memory cell MC2 through the power supply line SL1.
For example, the ground line SL2 is shared by the memory cell MC1 and the memory cell MC5 that are adjacent to each other in the y-direction. A PNP-type bipolar transistor 31 in the memory cell MC1 is adjacent to a PNP-type bipolar transistor 35 in the memory cell MC5 in the y-direction. A collector of the PNP-type bipolar transistor 31 in the memory cell MC1 and a collector of the PNP-type bipolar transistor 35 in the memory cell MC5 are connected to the common ground line SL2. The collector of the PNP-type bipolar transistor 31 in the memory cell MC1 is connected to the collector of the PNP-type bipolar transistor 35 in the memory cell MC5 through the ground line SL2.
The memory cell MC1 and the memory cell MC2 have a mirror image relationship with the power supply line SL1 being used as an axis of symmetry. Further, the memory cell MC1 and the memory cell MC5 have a mirror image relationship with the ground line SL2 at a boundary. In this embodiment, the mirror image relationship means that the memory cells adjacent to each other in the y-direction have a line-symmetric relationship with the power supply line/ground line at the center or the memory cells adjacent to each other have a relationship in which they are inverted in the y-direction.
When the memory cells are arranged in the memory cell array in such a manner that the memory cells adjacent to each other in the y-direction have the mirror image relationship in this manner, the memory cells adjacent to each other can share the power supply lines SL1 and SL3 and the ground lines SL0 and SL2. As a result, an area of the memory cell array can be reduced and the interconnect layout is simplified.
Operations of the memory cell array shown in
Here, a write operation for a memory cell selected as an operation target (which will be referred to as a selected hereinafter) will be exemplified to describe the operation of the memory cell array. Memory cells other than the selected cell in the memory cell array will be referred to as non-selected cells.
In this example, the selected cell is the memory cell MC1 in the memory cell array shown in
The bit line and the word line connected to the selected cell will be referred to as a selected bit line and a selected word line hereinafter. The bit lines other than the selected bit line will be referred to as non-selected bit lines, and word lines other than the selected word line will be referred to as non-selected word lines. Further, in the non-selected cells, a non-selected cell connected to the selected bit line and the non-selected word line or a non-selected cell connected to the selected word line and the non-selected bit line may be referred to as a half-selected cell.
At the time of a write operation, potentials in the power supply lines SL1 and SL3 are set to a power supply voltage Vdd, and potentials in the ground lines SL0 and SL2 are set to the ground potential Vss. It is to be noted that potentials in the power supply lines SL1 and SL3 and the potentials in the ground lines SL0 and SL2 can be changed to drive the memory cell array. However, when the potentials in the power supply line/ground line are changed, there is a tendency that consumption power increases and operations of the memory cell array become complicated. Therefore, it is preferable for the potentials in the power supply lines SL1 and SL3 and the ground lines SL0 and SL2 to be fixed while supplying the power supply voltage to the chip.
Therefore, in a state that the potentials in the power supply lines/ground lines SL0, SL1, SL2, and SL3 are set to predetermined values, predetermined data is written into the selected cell by adjusting potentials in the bit lines BL0, BL1, and BL2 and the word lines WL0, WL1, and WL2, respectively, and operations of the entire memory cell array are controlled to prevent the data from being written into the non-selected cells.
It is to be noted that, since the potentials in the bit lines BL0, BL1, and BL2 change between an “H” level (a state “1”) and an “L” level (a state “0”) in the write operation, an “H/2” level (which will be also referred to as a state “0.5”) is preferable as the potential in each bit line in a data holding state, for example. The “H/2” level is, e.g., a potential of approximately Vdd/2.
A state that the potentials in the bit lines BL0, BL1, and BL2 are set to the “H/2” level in this manner is determined as a memory cell standby state, whereby times for charging and discharging the bit lines BL0, BL1, and BL2 can be reduced.
When the MTJ element 11 has the same connection relationship as that in the example shown in
When the potential in the selected bit line BL1 is set to the “H” level (Vdd) and the potential in the selected word line WL1 is set to the “0” level, the emitter current in the PNP-type bipolar transistor 31 increases.
However, in regard to the non-selected cell MC4 adjacent to the selected cell MC1 in the x-direction, the potentials in the bit line and the word line must be considered. That is, even in the non-selected cell MC4 connected to the selected word line WL1, currents from the bipolar transistors 24 and 34 may be generated, and data may be possibly written into the MTJ element 14 in the non-selected cell MC4.
The non-selected cell (the half-selected cell) MC4 adjacent to the selected cell MC1 in the x-direction is connected to both the selected word line WL1 and the non-selected bit line BL0 which is at the “H/2” level. Therefore, as shown in
In
As shown in
It is to be noted that a reverse bias is applied to a portion between the base and the emitter of the NPN-type bipolar transistor 24, and hence the NPN-type bipolar transistor 24 is in the OFF state.
In a situation that the potential in the non-selected bit line BL0 is Vdd/2 in this manner, data can be prevented from being erroneously written into the half-selected cell MC4 connected to the selected word line WL1 when an intensity of the potential in the selected word line WL1 is approximately 20% (approximately Vdd/6) of that of the power supply voltage Vdd.
Further, as shown in
Furthermore, the non-selected cell MC2 adjacent to the selected cell MC1 in the y-direction is connected to the selected bit line BL1. The potential in the selected bit line BL1 is set to the voltage Vdd. Therefore, when the potential in the non-selected word line WL0 connected with the half-selected cell MC2 is set to a value close to the voltage Vdd (<Vdd) in regard to the half-selected cell MC2 connected to the selected bit line BL1, the emitter current of the PNP-type bipolar transistor 32 in the half-selected cell MC2 is hardly output. That is, the output current from the PNP-type bipolar transistor 32 is sufficiently smaller than the switching threshold current. Further, since the reverse bias is applied to the portion between the emitter and the base of the NPN-type bipolar transistor 22 of the half-selected cell MC2, the NPN-type bipolar transistor 22 is in the OFF state. Therefore, erroneous writing with respect to the half-selected cell MC2 can be suppressed.
However, when the potential in the non-selected word line WL0 is adjusted to a value close to the potential (the voltage Vdd) in the selected bit line BL1, an operation of the non-selected cell MC3 connected to this non-selected word line WL0 must be considered. The non-selected cell MC3 is adjacent to the half-selected cell MC2 in the x-direction and adjacent to the half-selected cell MC4 in the y-direction.
Therefore, the potential in the non-selected word line WL0 must be set to not only prevent data from being written into the half-selected cell MC2 connected to the selected bit line BL1 but also prevent data from being written into the non-selected cell MC3 that shares the non-selected word line WL0 with the half-selected cell MC2.
The potential in the non-selected bit line BL0 connected with the non-selected cell MC3 is approximately Vdd/2. Therefore, when the potential in the non-selected word line WL0 is changed to the “H” level, i.e., the voltage Vdd, the base voltage Vb increases to be higher than the emitter voltage Ve. In this case, although the PNP-type bipolar transistor 33 in the non-selected cell MC3 is in the OFF state, the NPN-type bipolar transistor 23 in the non-selected cell MC3 enters the ON state.
To prevent the NPN-type bipolar transistor 23 from being turned on, the potential in the non-selected word line WL0 is reduced to be lower than the voltage Vdd.
In
As shown in
As a result, erroneous writing with respect to the non-selected cell MC3 can be suppressed.
A potential VSL1 in each of the power supply lines SL1 and SL3 is set to the power supply voltage Vdd, and a potential VSL2 in each of the ground lines SL0 and SL2 is set to the ground potential (0 V). These potentials are equally applied to the respective memory cells MC1, MC2, MC3, and MC4.
As shown in
In the memory cell MC2 connected to the selected bit line BL1 and the non-selected word line WL0, the potential VWL in the non-selected word line WL0 connected to the memory cell MC2 is set to approximately 0.8×Vdd. As a result, the potential VBL in the selected bit line is set to Vdd, and the potential VWL in the non-selected word line is set to 0.8×Vdd, whereby both the bipolar transistors in the half-selected cell MC2 hardly output a current and substantially enter the OFF state.
In the memory cell MC4 connected to the selected word line WL1 and the non-selected bit line BL0, the potential VBL of the non-selected bit line BL0 connected to the half-selected cell MC4 is set to approximately 0.5×Vdd. Since the potential VWL in the word line is set to 0.2×Vdd, both the bipolar transistors in the memory cell MC4 substantially enter the OFF state.
Further, in the memory cell MC3 connected to the non-selected word line WL0 and the non-selected bit line BL0, the potential VWL in the non-selected word line WL0 is set to 0.8×Vdd, and the potential VBL in the non-selected bit line BL0 is set to 0.5×Vdd. Therefore, both the bipolar transistors in the memory cell MC3 substantially enter the OFF state.
As shown in
Furthermore, the output current (the emitter) from the NPN-type bipolar transistor in the memory cell may be used as a write current for the MTJ element in some situations.
In this case, substantially the same situation as that in which the emitter current of the PNP-type bipolar transistor is used as the write current is taken into consideration to set the potentials in the bit line and the word line are set, respectively.
As shown in
In a half-selected cell (the memory cell MC4 in this example) connected to the selected word line, the potential VBL in the non-selected bit line is set to approximately 0.5×Vdd. As a result, both the bipolar transistors 24 and 34 in the half-selected cell MC4 hardly output a current and substantially enter the OFF state.
In a half-selected cell (the memory cell MC2 in this example) connected to the selected bit line, the potential VWL in the non-selected word line is set to approximately 0.2×Vdd. As a result, both the bipolar transistors 22 and 32 in the half-selected cell MC2 substantially enter the OFF state.
Moreover, in a non-selected cell (the memory cell MC3 in this example), the potential VWL in the non-selected word line is set to be equal to the potential for the half-selected cell MC2, and the potential VBL in the non-selected bit line is set to be equal to the potential for the half-selected cell MC4. As a result, both the bipolar transistors 33 and 23 in the non-selected cell MC3 substantially enter the OFF state.
As described above, in the resistance change type memory according to this embodiment, the output current (the emitter current) from each bipolar transistor is used for the write operation with respect to the resistance change type memory element (the MTJ element). Even in the circuit configuration where the current from each bipolar transistor is used as the write current, the selected cell and the non-selected cell in the memory cell array can be driven by controlling the potentials in the bit line and the word line, respectively like the example shown in
Additionally, when the bipolar transistors are used as constituent elements for the memory cell, the large write current can be supplied to the MTJ element as compared with an example that the write current is supplied to the MTJ element through the field-effect transistor even if miniaturization of the memory cell has advanced.
It is to be noted that the write operation has been exemplified herein to explain the operation of the entire memory cell array, and data can be read from the selected cell in a read operation for the selected cell by setting the set potentials in the bit line and the word line to be smaller than the potentials used in the write operation.
Therefore, according to the resistance change type memory of this embodiment, operation characteristics of the memory can be improved.
<Structure>
Structural Example 1 of the memory cell array in the resistance change type memory (the MRAM in this example) according to this embodiment will now be described with reference to
It is to be noted that a structure of one memory cell in a memory cell array is substantially the same as that described with reference to
As shown in
As described above, the memory cells adjacent to each other in the y-direction are laid out on a semiconductor substrate 50 to have a line-symmetric relationship (a mirror image relationship) with a power supply line SL1 or a ground line SL2 being used as an axis of symmetry.
In the example shown in
For example, p-well regions 321 and 322 as collector layers of the PNP-type bipolar transistors 31 and 32 are also used as the ground line SL2. Therefore, a p-well region 37 is provided in a semiconductor substrate (an n-well region 27) to cut across a region where the two PNP-type bipolar transistors of neighboring memory cells are formed without being divided by the isolation insulating film. Furthermore, the p-well region 37 extends in, e.g., the x-direction. As a result, the p-well region 37 is shared by memory cells (PNP-type bipolar transistor) that share the ground line SL2.
For example, the n-well region 27 is continuous in the substrate 50 without being divided by the isolation insulating film. The n-well region 27 is used as collector layers 221 and 222 of the NPN-type bipolar transistors and also used as the power supply line SL1.
Here, a power supply voltage Vdd is applied to the n-well region 27, and a ground potential Vss is applied to the p-well region 37. Therefore, a reverse bias is applied to a pn junction of the two well regions 27 and 39.
The n-type collector layer 22 and the p-type collector layer 32 are also used as the high-potential (Vdd) side power supply line SL1 and a low-potential (Vss) side ground line SL2 in a triple well structure.
In this case, considering resistance values of well regions 22 and 32 (which will be referred to as well resistance), since an influence of a voltage drop due to the well resistance is remarkable, it is preferable to shunt each power supply and the well regions 22 and 32 at predetermined intervals by using metal interconnects and a contacts. As a result, a sufficient voltage/current can be supplied to the memory cells MC, thus stabilizing operations of the memory cells.
As shown in
As shown in
A minimum processing dimension (which will be referred to as a half pitch) of a member (e.g., the isolation insulating film) formed in the semiconductor region is determined as F. Since the two memory cells MC adjacent to each other share an isolation region, a dimension of the isolation region between the memory cells adjacent to each other is determined to be 0.5 F per memory cell. Moreover, a dimension of a bipolar transistor forming region in the y-direction is, e.g., 2 F. That is, in one bipolar transistor, a sum of a dimension of the emitter layer and a dimension of the base layer in the y-direction is 2 F. A dimension of the bipolar transistor forming region in the x-direction is, e.g., F. In this case, in the memory cell MC including the planar type bipolar transistors 2 and 3, a cell size of one memory cell is 12 F2.
<Manufacturing Method>
A first manufacturing method of the resistance change type memory according to this embodiment will now be described with reference to
As shown in
In the n-well region 27, a portion in an NPN-type bipolar transistor forming region is used as a collector layer of an NPN-type bipolar transistor. The n-well region 27 is also used as a power supply line SL1. In the p-well region 37, a portion in a PNP-type bipolar transistor forming region is used as a collector of a PNP-type bipolar transistor. Additionally, the p-well region 37 is also used as a ground line.
A resist is applied to an upper surface of the semiconductor substrate 50. Further, the resist is patterned by the photolithography technology to form a resist mask 90 having an opening portion. The opening portion of the resist mask 90 is formed on the PNP-type bipolar transistor forming region. After the opening portion is formed, n-type impurity layers 331 and 332 are formed in p-type well regions 321 and 322 by ion implantation. The n-type impurity layers 331 and 332 are used as base layers of PNP-type bipolar transistors.
For example, as shown in
Then, the resist mask 90 is delaminated.
As shown in
Based on ion implantation, p-type impurity layers 231 and 232 are formed in the n-well regions 22 of the NPN-type bipolar transistor forming regions. The p-type impurity layers 231 and 232 are used as base layers of the NPN-type bipolar transistors.
After the p-type impurity layers 231 and 232 are formed, the resist mask 91 is delaminated.
As shown in
Moreover, based on the ion implantation, p+-type impurity layers 311 and 312 as emitters of the PNP-type bipolar transistors are formed in the n-type impurity layers 331 and 332. As a result, the PNP-type bipolar transistors are formed in the semiconductor substrate 50.
After the p+-type impurity layers 311 and 312 are formed, the resist mask 92 is delaminated.
Thereafter, a resist mask is formed on the semiconductor substrate 50 by the same technique. Opening portions are formed in this resist mask in such a manner that surfaces of regions where emitters are formed (the p-type impurity layers 231 and 232) are exposed in the NPN-type bipolar transistor forming region. Further, the resist mask is used as a mask to perform the ion implantation.
Then, as shown in
Then, for example, polysilicon is deposited on the surface of the semiconductor substrate 50 by using, e.g., a CVD (Chemical Vapor Deposition) method. Further, the polysilicon is processed to extend in, e.g., the x-direction by using a photolithography technology and an RIE (Reactive Ion Etching) method. As a result, interconnects 291, 292, 391, and 392 as word lines are formed on the base layers 231, 232, 331, and 332 of the NPN-type/PNP-type bipolar transistors.
It is to be noted that the interconnects 291, 292, 391, and 392 may be formed by using a metal. In this case, the metal is deposited on the semiconductor substrate 50 by using a sputtering method.
To prevent the interconnects 291, 292, 391, and 392 from coming into contact with the emitter layers 211, 212, 311, and 312, it is preferable for dimensions of the interconnects 291, 292, 391, and 392 to be not greater than dimensions of upper surfaces of the base layers 231, 232, 331, 332. Therefore, forming the interconnects 291, 292, 391, and 392 by using a slimming technology or a sidewall transfer processing technology is preferable.
After the interconnects 291, 292, 391, and 392 are formed, an insulating film (e.g., silicon nitride) is deposited on the semiconductor substrate 50 by, e.g., the CVD method. This insulating film is etched back based on anisotropic etching. Then, a sidewall insulating film 59 selectively remains on upper surfaces and side surfaces of the interconnects 291, 292, 391, and 392.
Subsequently, as shown in
Contact holes are formed in the interlayer insulating film 52 so that surfaces of the n+-type/p+-type impurity layers 211, 212, 311, and 312 as emitters are exposed. Contact plugs 61A and 61B are buried in the contact holes.
A conductive film is deposited on the interlayer insulating film 52 and the contact plugs 61A and 61B by, e.g., the sputtering method. The conductive film is processed in such a manner that the emitter layers of the two bipolar transistors in each memory cell are connected to each other. As a result, intermediate interconnects 63 that connect the n+-type emitter layers 211 and 212 of the NPN-type bipolar transistors with the p+-type emitters 311 and 312 of the PNP-type bipolar transistors are formed.
Constituent members of resistance change type memory elements 11 and 12 are sequentially deposited on the intermediate interconnects 63. For example, when each of the resistance change type memory elements 11 and 12 is an MTJ element, a lower electrode, a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and an upper electrode are sequentially deposited on each intermediate interconnect 63 by, e.g., the sputtering method. One of the first and second magnetic layers functions as a reference layer and the other serves as a recording layer in accordance with a material or a circuit configuration adopted for the MTJ element.
Further, a second interlayer insulating film 53 is deposited on the first interlayer insulating film 52 to cover the MTJ elements 11 and 12. Contact holes are formed in the interlayer insulating film 53 to expose the upper electrodes of the MTJ elements 11 and 12, and via plugs 64 are buried in the contact holes.
Furthermore, a metal film is deposited on the second interlayer insulating film 53 by, e.g., the sputtering method. The metal film is processed into a predetermined shape, thereby forming a bit line BL extending in the y-direction.
Based on the above-described steps, the resistance change type memory according to this embodiment is formed.
When the bipolar transistors having the planar structure are used for the memory cells, the memory cell array can be formed by a relatively easy process, thus reducing a manufacturing cost of the resistance change type memory.
As described above, according to the first manufacturing method of the resistance change type memory of this embodiment, the resistance change type memory having improved characteristics can be provided.
<Structure>
Structural Example 2 of the memory cell array of the resistance change type memory (the MRAM) according to this embodiment will now be described with reference to
The memory cell array shown in
It is to be noted that a structure of one memory cell in the memory cell array in
The memory cell using the bipolar transistors having the lateral structure is not a structure supplying a current to an MTJ element through well regions. Therefore, in the memory cell using the bipolar transistors having the lateral structure, an isolation region does not have to be provided between memory cells adjacent to each other in the y-direction. Therefore, a size of the memory cell can be reduced. In the memory cell array formed of the memory cells using the bipolar transistors having the lateral structure, an SOI layer 57 of an intrinsic semiconductor is used as each bipolar transistor forming region to electrically separate impurity layers adjacent to each other in the y-direction, thereby reducing a leak current between the memory cells.
The memory cells aligned in the y-direction are provided in a common active region AA. Therefore, the active region AA is continuous in the y-direction.
As shown in
Each of collector layers 221, 222, and 3212 and base layers 231, 232, 331, and 332 has a dimension F.
Silicide layers 69 are provided on the collector layers 221, 222, and 3212 and emitter layers 211, 212, 311, and 312. Contact plugs 65A, 65B, and 65C are provided on the silicide layers 69, respectively. The collector layers 221, 222, and 3212 and the emitter layers 211, 212, 311, and 312 are connected to a power supply line SL1 and a ground line SL2 through the silicide layers 69 and the contact plugs 65A, 65B and 65C, respectively.
An interconnect above each of the n-type collector layers 221 and 222 is the power supply line SL1. An interconnect above the p-type collector layer 3212 is the ground line SL2. The collector layers 221, 222, and 3212, the contact plugs 65A, 65B, and 65C, and the interconnects SL1 and SL2 are shared by the memory cells adjacent to each other in the y-direction. The contact plugs 65A, 65B, and 65C are arranged between the sidewall insulating films 59 adjacent to each other in the y-direction.
MTJ elements 11 and 12 are provided above the emitter layers 211, 212, 311, and 312. As described above, the emitter layers 211, 212, 311, and 312 are formed in the SOI layer 57 so that the two impurity layers which are of the n+-type and the p+-type can fall within the half pitch dimension F.
It is to be noted that an intrinsic semiconductor layer may be interposed between each of the n+-type emitter layers 211 and 212 and each of the pt-type emitter layers 311 and 312.
In the memory cell array using the bipolar transistors having the lateral structure, the collector layers can be shared by the memory cells adjacent to each other in the y-direction, and each isolation region between the memory cells adjacent to each other in the y-direction can be eliminated. Moreover, in the bipolar transistors having the lateral structure according to this embodiment, the two emitter layers can be formed within the half pitch (F).
Therefore, a cell size of the memory cell according to Structural Example 2 can be reduced to be smaller than that in Structural Example 1. The cell size of the memory cell according to Structural Example 2 is, e.g., 8 F2.
<Manufacturing Method>
A second manufacturing method of the resistance change type memory according to this embodiment will now be described with reference to
As shown in
For example, p-type impurity layers 231, 2312, and 232 are formed in the SOI layer 57 based on the ion implantation method. As a result, a base layer of an NPN-type bipolar transistor and a collector layer of a PNP-type bipolar transistor are formed. Each of p-type impurity layers 231, 2312, and 232 has a dimension of F (a half pitch).
After the resist mask 95 is delaminated, as shown in
N-type impurity layers 221, 222, 331, and 332 are formed in the SOI layer 57 based on the ion implantation. Each of the n-type impurity layers 221, 222, 331, and 332 has the dimension of F.
Incidentally, conversely to the steps depicted in
As shown in
The conductive layer is formed into a predetermined shape by using the photolithography technology and the RIE method. As a result, interconnects (word lines) 291, 292, 391, and 392 are formed on the p-type/n-type impurity layers 231, 232, 331, and 332 as the base layers.
An insulating film (e.g., a silicon nitride) is deposited to cover the interconnects 291, 292, 391, and 392 and the SOI layer 57, and this insulating film is etched back. As a result, a sidewall insulating film 59 is formed on side surfaces and upper surfaces of the interconnects 291, 292, 391, and 392. On the other hand, the insulating film is removed from an upper surface of the SOI layer 57, whereby the upper surface of the SOI layer 57 is exposed.
In this case, before forming the emitter layers of the bipolar transistors, the interconnects (the word lines) are formed on the base layers 231, 232, 331, and 332 of the respective bipolar transistors.
As shown in
As shown in
Here, the ion implantation having an ion incidence direction set to an oblique direction with respect to the substrate surface is carried out. An incidence angle θi of ions (which will be referred to as an ion incidence angle) is an oblique direction with respect to a vertical direction of the substrate surface. The ion incidence angle θi is set based on the vertical direction of the substrate surface of the incidence direction of ions.
Ions are not added to the inside of the SOI layer 57 that is hidden behind the resist mask 97 and the interconnect 291 with respect to the incidence direction of ions in the ion implantation is carried out from the oblique direction in this manner. Therefore, in the region exposed by the opening portion, the p-type impurity layer 311 as the emitter layer is formed with a dimension associated with the film thickness (a height) of the resist mask 97 and the ion incidence angle θi in a straight line of the incidence direction of ions.
As shown in
As shown in
As described above, since the memory cells adjacent to each other are laid out to have a mirror image relationship, there is a region where the arrangement of the n-type emitter layers and the p-type emitter layers with respect to the extending direction of the active region are reversed for each memory cell as shown in
Here, when the ion implantation is carried out in such a manner that portions OB where the emitter layers 211, 311, 212, and 312 overlap the base layers 231, 232, 331, and 332 are generated, dimensions of the base layers 231, 232, 331, and 332 in a direction parallel to the substrate surface can be reduced to be smaller than the half pitch. When the dimensions of the base layers 231, 232, 331, and 332 are reduced, operation characteristics of the bipolar transistors can be improved.
An intrinsic semiconductor layer (the SOI layer 57) may remain between the n+-type impurity layers 211 and 212 and the p+-type impurity layers 311 and 312.
It is to be noted that the interconnects 291, 292, 391, and 392 may be formed after the emitter layers 211, 311, 312, and 312 are formed by using the ion implantation in the oblique directions and the resist mask having the predetermined film thickness.
After forming the emitter layers 211, 311, 212, and 312, the resist mask is removed.
As shown in
Then, an interlayer insulating film 52 is deposited on the SOI substrate 50 by, e.g., the CVD method. Further, contact plugs 65A, 65B, and 65C, resistance change type memory elements 11 and 12, and interconnects 63, SL1, SL2, and BL are sequentially formed at the same steps as those in the first manufacturing method. Each contact plug 65A is formed on the silicide layer 69 to cut across the two emitter layers 211 and 311 or 212 and 312.
Consequently, as shown in
When the bipolar transistors having the lateral structure are used in the memory cells, it is possible to provide the resistance change type memory including the memory cell transistors having a smaller cell size than that in the example where the bipolar transistors having the planar structure are used.
As described above, according to the second manufacturing method of the resistance change type memory of this embodiment, the resistance change type memory having improved characteristics can be provided.
In the resistance change type memory, the MRAM or the STT-RAM (a magnetic memory) is exemplified. A magnetoresistive element (magnetoresistive effect element) is used as the resistance change type memory element 1 in the memory cell.
However, the resistance change type memory according to this embodiment may be a memory using a variable resistive element as a memory element (e.g., an ReRAM), a phase-change memory using a phase-change element as a memory element (e.g., a PCRAM), or an ion memory.
A basic configuration of the resistance change type memory element (the variable resistive element) 1 used in an ReRAM is shown.
As shown in
The resistance change film 14 has properties (characteristics) that a resistance value thereof varies when a voltage or a current is supplied. For example, the resistance change film 14 is formed of, e.g., a transition metal oxide film or a perovskite-type metal oxide.
For example, the transition metal oxide film is exemplified by NiOx, TiOx, or CuxO (e.g., 1≦x≦2), and the perovskite-type metal oxide is exemplified by PCMO (Pr0.7Ca0.3MnO3), Nb-added SrTi(Zr)O3, or Cr-added SrTi(Zr)O3.
The properties that the resistance value of the resistance change film 14 varies appear or are stably obtained are based on, e.g., combinations of the resistance change film 14 and the electrodes 13A and 13B. Therefore, it is preferable to appropriately select a material for the electrodes 13A and 13B in accordance with a material for the resistance change film 14. The electrodes 13A and 13B are used as terminals of the memory element 1.
A resistance state of the resistance change type memory element 1 varies depending on an operation mode called a bipolar type or an operation mode called a unipolar type.
In regard to the resistance change type memory element which is of the bipolar type, the resistance state of the resistance change type memory element changes depending on a polarity of a voltage applied to a portion between terminals. In regard to the resistance change type memory element which is of the unipolar type, the resistance state of the resistance change type memory element changes depending on an intensity of a program voltage applied to a portion between terminals.
For example, a resistance value of the resistance change type memory element which is of the bipolar type changes based on the movement of ions (a change in concentration profile) in the resistance change film 14. For example, a resistance value of the resistance change type memory element which is of the unipolar type changes based on generation or annihilation (including partial annihilation) of a fine current path (a filament) in the resistance change film 14.
Whether the resistance change type memory element is of the unipolar type or the bipolar type is mainly dependent on a material of the resistance change film 14.
When a predetermined program voltage (or current) is applied to the portion between the terminals, a resistance state of the resistance change type memory element (the variable resistance element) is reversibly changed from a high-resistance state to a low-resistance state or from the low-resistance state to the high-resistance state irrespective of whether the resistance change type memory element is of the bipolar type or the unipolar type. Further, the changed resistance state of the resistance change type memory element is substantially nonvolatile until the predetermined program voltage is applied.
When the resistance change type memory element 1 is the resistance change type memory element which is of the bipolar type, polarities of voltages applied to the electrodes 13A and 13B are reversed depending on a situation that the resistance state of the element is changed to the low-resistance state (a program state, writing data “0”) and a situation that the resistance state of the same is changed to the high-resistance state (an erased state, writing data “1”).
In the resistance change type memory element which is of the bipolar type, when the electrode 13A of the memory element 1 is set to the high-potential side and the electrode 13B of the memory element 1 is set to the low-potential side, a bias is applied along a direction extending from the electrode 13A to the electrode 13B. For example, the resistance state of the resistance change type memory element 1 changes from the high-resistance state to the low-resistance state. However, in this voltage setting state, if the resistance state of the low-resistance change type memory element 1 is the low-resistance state, the resistance state of the resistance change type memory element 1 does not change. On the other hand, when the electrode 13B of the memory element 1 is set to the high-potential side and the electrode 13A of the memory element 1 is set to the low-potential side, the bias is applied along a direction extending from the electrode 13B to the electrode 13A. In this case, as opposed to the case that the electrode 13A is set to the high-potential side, the resistance state of the resistance change type memory element 1 changes from the low-resistance state to the high-resistance state. However, in this voltage setting state, if the resistance state of the resistance change type memory element 1 is the high-resistance state, the resistance state of the resistance change type memory element 1 does not change.
As described above, in the resistance change type memory element (a variable resistive element) which is of the bipolar type, the polarity of the voltage (a current or an electric field) is reversed in accordance with the resistance state.
Incidentally, it is needless to say that a threshold value (a voltage value or a current value) required to change the resistance state is present even in the resistance change type memory element which is of the bipolar type.
When the resistance change type memory element 1 is a unipolar type memory element, intensities of voltages (voltage values) applied to the electrodes 13A and 13B, pulse widths of the voltages, or both the voltage values and the pulse widths differ depending on a case that the resistance state of the element is set to the low-resistance state (the program state, writing data “0”) and a case that the resistance state is set to the high-resistance state (the erase state, writing data “1”). In the unipolar resistance change type memory element, voltages applied to terminals have the same polarity. That is, at the time of writing data (changing the resistance state), one of the terminals (the electrodes) of the resistance change type memory element is used as a cathode, and the other is used as an anode.
The resistance change type memory element 1 may be a phase-change element. In the phase-change element, a crystal structure of the resistance change film 14 changes between a crystal phase and an amorphous phase by heat generated due to a supplied current/voltage. As a result, a resistance value of the phase-change element as the memory element changes. The resistance change film 14 of the phase change element is formed by using, e.g., a chalcogen compound such as Ge—Sb—Te, In—Sb—Te, Ag—In—Sb—Te, or Ge—Sn—Te. In the phase-change element as the memory element 1, it is preferable to provide a heater layer between the resistance change film 14 and each of the electrodes 13A and 13B in terms of power consumption.
In the resistance change type memory element using the variable resistive element or the phase-change element, an operation of changing the resistance state of the resistance change type memory element from the high-resistance state to the low-resistance state is called a set operation. An operation of changing the resistance state of the resistance change type memory element from the low-resistance state to the high-resistance state is called a reset operation.
In the bipolar type variable resistive element, since voltages having different polarities are used in the set and reset operations, bi-directionally supplying a current is preferable, as in the MTJ element.
Therefore, for example, in the resistance change type memory according to this embodiment, using the bipolar type variable resistive element as the memory element is preferable.
As described above, the resistance change type memory according to this embodiment can be applied even if the resistance change type memory element is an element other than the MTJ element.
[Other]
According to the resistance change type memory of this embodiment, operation characteristics of the memory can be improved.
In this embodiment, the memory cell array using the memory cells according to this embodiment is not restricted to the foregoing examples, and the connection relationship between the memory cells or the layout of the memory cells may be appropriately changed to form a memory cell array having a circuit configuration and a layout different from those in the foregoing examples.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2010-236448 | Oct 2010 | JP | national |
