Claims
- 1. A resistive heater comprising a resistive layer coupled to a power source, said resistive layer comprising a metallic component and one or more oxide, nitride, carbide, silicide, and/or boride derivatives of said metallic component, wherein said resistive layer has a resistivity of 10−4 to 106 Ω·cm, wherein application of current from said power supply to said resistive layer results in production of heat by said resistive layer, and wherein when said resistive layer comprises an oxide derivative, said resistivity is greater than 2×10−3 Ω·cm.
- 2. The resistive heater of claim 1, wherein said resistive layer further comprises boron.
- 3. The resistive heater of claim 1, wherein said resistive layer further comprises a ceramic or cermet.
- 4. The resistive heater of claim 1, wherein said resistive heater is disposed on a substrate.
- 5. The resistive heater of claim 4, further comprising an electrically insulating layer between said substrate and said resistive layer.
- 6. The resistive heater of claim 5, wherein said insulating layer comprises aluminum oxide or silicon dioxide.
- 7. The resistive heater of claim 5, further comprising an adhesion layer between said insulating layer and said substrate.
- 8. The resistive heater of claim 7, wherein said adhesion layer comprises nickel-chrome alloy or nickel-chrome-aluminum-yttrium alloy.
- 9. The resistive heater of claim 5, wherein said electrically resistive layer comprises porcelain.
- 10. The resistive heater of claim 9, wherein said electrically resistive layer comprising porcelain is not roughened.
- 11. The resistive heater of claim 5, wherein said electrically resistive layer comprises epoxy.
- 12. The resistive heater of claim 1, further comprising a thermal barrier layer between said resistive layer and said substrate.
- 13. The resistive heater of claim 12, wherein said thermal barrier layer comprises zirconium oxide.
- 14. The resistive heater of claim 1, further comprising a ceramic layer superficial to said resistive layer.
- 15. The resistive heater of claim 14, wherein said ceramic layer comprises aluminum oxide.
- 16. The resistive heater of claim 15, wherein said ceramic layer is sealed with nanophase aluminum oxide.
- 17. The resistive heater of claim 1, further comprising a metallic layer superficial to said resistive layer.
- 18. The resistive heater of claim 17, wherein said metallic layer comprises molybdenum or tungsten.
- 19. The resistive heater of claim 1, wherein said substrate is a mold, a roller, or a platen for semiconductor wafer processing.
- 20. The resistive heater of claim 1, wherein said metallic component is titanium (Ti), silicon (Si), aluminum (Al), zirconium (Zr), cobalt (Co), nickel (Ni), iron (Fe), vanadium (V), tantalum (Ta), tungsten (W), molybdenum (Mo), hafnium (Hf), or alloys thereof.
- 21. The resistive heater of claim 1, further comprising a layer of machineable metal superficial to said resistive layer.
- 22. The resistive heater of claim 1, further comprising an electrically resistive layer comprising an oxidized region of said resistive layer.
- 23. The resistive heater of claim 3, wherein said substrate comprises metal, plastic, graphite, glassy carbon, glass, ceramic, or mica.
- 24. A resistive heater on a substrate, produced by the method comprising the steps of:
a) providing a substrate, a metallic component feedstock, and a reactant comprising one or more of oxygen, nitrogen, carbon, silicon, and boron; b) melting said feedstock to produce a stream of molten droplets; c) reacting said molten droplets with said reactant to produce one or more oxide, nitride, carbide, silicide, or boride derivatives of said metallic component, wherein a portion of said metallic component reacts with said reactant to produce said oxide, nitride, carbide, suicide and/or boride derivative of said metallic component and a portion of said metallic component remains unreacted; d) depositing said unreacted metallic component and said oxide, nitride, carbide, silicide, and/or boride derivatives of said metallic component onto said substrate to produce a resistive layer; and e) connecting said resistive layer of step (d) to a power supply, thereby producing a resistive heater, wherein said resistive layer has a resistivity of 10−4 to 106 Ω·cm, and wherein when said resistive layer comprises an oxide derivative, said resistive layer has a resistivity of greater than 2×10−3 Ω·cm.
- 25. The resistive heater of claim 24, wherein said molten droplets have an average diameter of 5 to 500 μm.
- 26. The resistive heater of claim 24, wherein said resistive layer further comprises boron.
- 27. A method of fabricating a resistive heater on a substrate, said method comprising the steps of:
a) providing a substrate, a metallic component feedstock, and a reactant comprising one or more of oxygen, nitrogen, carbon, silicon, and boron; b) melting said feedstock to produce a stream of molten droplets; c) reacting said molten droplets with said reactant to produce one or more oxide, nitride, carbide, silicide, or boride derivatives of said metallic component, wherein a portion of said metallic component reacts with said reactant to produce said oxide, nitride, carbide, silicide, and/or boride derivative of said metallic component and a portion of said metallic component remains unreacted; d) depositing said unreacted metallic component and said oxide, nitride, carbide, suicide, and/or boride derivative of said metallic component onto said substrate to produce a resistive layer; and e) connecting said resistive layer of step (d) to a power supply, thereby fabricating a resistive heater, wherein said melting step (b) and said reacting step (c) are coordinated such that the resistive layer of step (d) has a resistivity of 10−4 to 106 Ω·cm, and wherein when said resistive layer comprises an oxide derivative, said resistive layer has a resistivity of greater than 2×10−3 Ω·cm.
- 28. The method of claim 27, wherein said molten droplets of step (b) have an average diameter 5 to 500 μm.
- 29. The method of claim 27, further comprising step (f) applying a ceramic layer superficial to said resistive layer, wherein step (f) is performed before, during, or after step (e).
- 30. The method of claim 29, further comprising step (g) applying a metallic layer superficial to said ceramic layer, wherein step (g) is performed before, during, or after step (e).
- 31. The method of claim 27, wherein said substrate is an injection mold, a roller, or a platen for semiconductor wafer processing.
- 32. The method of claim 27, wherein said metallic component is titanium (Ti), silicon (Si), aluminum (Al), or zirconium (Zr), cobalt (Co), nickel (Ni), iron (Fe), vanadium (V), tantalum (Ta), tungsten (W), molybdenum (Mo), hafnium (Hf), or alloys thereof.
- 33. The method of claim 27, wherein in step (d), said substrate is heated to within ±10, 20, or 50° F. of a temperature at which said heater is operated during deposition of said resistive layer.
- 34. The method of claim 27, wherein said reactant comprises a gas.
- 35. The method of claim 27, wherein said reactant comprises a solid.
- 36. The method of claim 27, wherein said reactant comprises a liquid.
- 37. The method of claim 27, wherein said metallic component feedstock comprises said reactant.
- 38. The method of claim 27, wherein step (d) further comprises depositing a ceramic or cermet with said unreacted metallic component and said derivative of said metallic component.
- 39. A mold comprising a mold cavity surface and a coating comprising a resistive layer, said coating being disposed on at least a portion of said surface, wherein application of current from a power supply to said resistive layer results in production of heat by said resistive layer.
- 40. The mold of claim 39, wherein said resistive layer comprises a metallic component and one or more oxide, nitride, carbide, silicide, and/or boride derivatives of said metallic component, wherein said resistive layer has a resistivity of 10−4 to 106 Ω·cm.
- 41. The mold of claim 39, wherein said coating further comprises an electrically insulating layer between said cavity surface and said resistive layer.
- 42. The mold of claim 41, wherein said coating further comprises an adhesion layer between said cavity surface and said insulating layer.
- 43. The mold of claim 39, wherein said coating further comprises a thermal barrier layer between said resistive layer and said substrate.
- 44. The mold of claim 39, wherein said coating further comprises a ceramic layer superficial to said resistive layer.
- 45. The mold of claim 39, wherein said coating further comprises a metallic layer superficial to said resistive layer.
- 46. The mold of claim 39, further comprising a runner, wherein said coating is disposed on at least a portion of a surface of said runner.
- 47. A method of making a molded product, said method comprising the steps of:
a) providing an injection mold comprising a cavity surface and a coating comprising a resistive heater coupled to a power supply, said coating disposed on at least a portion of said cavity surface, whereby application of current from said power supply to said resistive layer results in production of heat by said resistive layer; b) heating said resistive heater; and c) injecting a material to be molded into said mold, wherein said heated resistive heater regulates solidification of said material, thereby forming said molded product.
- 48. The method of claim 47, wherein said resistive heater in step (a) comprises a metallic component and one or more oxide, nitride, carbide, suicide, and/or boride derivatives of said metallic component, wherein said resistive heater has a resistivity of 10−4 to 106 Ω·cm.
- 49. The method of claim 47, wherein said resistive heater is produced by a method comprising the steps of:
a) providing a metallic component feedstock and a reactant comprising one or more of oxygen, nitrogen, carbon, silicon, and boron; b) melting said feedstock to produce a stream of molten droplets; c) reacting said molten droplets with said reactant to produce one or more oxide, nitride, carbide, silicide, or boride derivatives of said metallic component, wherein a portion of said metallic component reacts with said reactant to produce said oxide, nitride, carbide, silicide, and/or boride derivatives of said metallic component, and a portion of said metallic component remains unreacted; d) depositing said metallic component and said oxide, nitride, carbide, silicide, and/or boride derivatives of said metallic component to produce a resistive layer; and e) connecting said resistive layer of step (d) to a power supply, thereby fabricating said resistive heater.
- 50. The method of claim 47, further comprising step (d) cooling said material.
- 51. The method of claim 50, wherein said material is a thermoplastic or metal.
- 52. A molded part produced by the method of claim 47.
- 53. A cylindrical roller comprising an outer surface, an inner surface surrounding a hollow core, and a resistive heater comprising a resistive layer coupled to a power source, said resistive layer comprising a metallic component and one or more oxide, nitride, carbide, silicide, and/or boride derivatives of said metallic component, wherein said resistive layer has a resistivity of 10−4 to 106 Ω·cm, and wherein application of current from said power supply to said resistive layer results in production of heat by said resistive layer, wherein said resistive heater is disposed on said outer surface or said inner surface.
- 54. A method of drying paper during manufacturing comprising the steps of:
a) providing paper comprising a water content of greater than about 5% and one or more cylindrical rollers, each comprising an outer surface, an inner surface surrounding a hollow core, and a resistive heater comprising a resistive layer coupled to a power source, said resistive layer comprising a metallic component and one or more oxide, nitride, carbide, silicide, and/or boride derivatives of said metallic component, wherein said resistive layer has a resistivity of 10−4 to 106 Ω·cm, and wherein application of current from said power supply to said resistive layer results in production of heat by said resistive layer, wherein said resistive heater is disposed on said outer surface or said inner surface; b) heating said roller with said resistive heater; and c) contacting said paper with said roller for a time suitable for drying said paper to a water content of less than about 5%.
- 55. A semiconductor wafer processing system comprising:
a) an enclosure defining a reaction chamber; b) a support structure mounted within the reaction chamber, the support structure mounting a semiconductor wafer to be processed within said chamber; and c) a resistive heater comprising a resistive layer coupled to a power source, said resistive layer comprising a metallic component and one or more oxide, nitride, carbide, suicide, and/or boride derivatives of said metallic component, wherein said resistive layer has a resistivity of 10−4 to 106 Ω·cm, wherein application of current from said power supply to said resistive layer results in production of heat by said resistive layer, and wherein said heater is disposed on a surface of said reaction chamber.
- 56. A method for heating a semiconductor wafer comprising the steps of:
a) providing a semiconductor wafer and a semiconductor wafer processing system comprising:
i) an enclosure defining a reaction chamber; ii) a support structure mounted within the reaction chamber, thesupport structure mounting a semiconductor wafer to be processed within said chamber; and iii) a resistive heater comprising a resistive layer coupled to a power source, said resistive layer comprising a metallic component and one or more oxide, nitride, carbide, silicide, and/or boride derivatives of said metallic component, wherein said resistive layer has a resistivity of 10−4 to 106 Ω·cm, and wherein application of current from said power supply to said resistive layer results in production of heat by said resistive layer; and b) heating said wafer with said resistive heater.
- 57. An impellor comprising:
a) two or more blades; b) a resistive layer disposed on one or more of said blades and coupled to a power supply, wherein said resistive layer comprising a metallic component and one or more oxide, nitride, carbide, silicide, and/or boride derivatives of said metallic component, wherein said resistive layer has a resistivity of 10−4 to 106 Ω·cm, and wherein application of current from said power supply results in production of heat by said resistive layer; and c) a shaft connected to said blades and optionally connected to a motor, wherein said motor is capable of rotating said blades by rotating said shaft.
- 58. A method of fabricating a resistive heater on a substrate, said method comprising the steps of:
a) providing a substrate, a metallic component feedstock, and a reactant comprising one or more of oxygen, nitrogen, carbon, silicon, and boron; b) melting said feedstock to produce a stream of molten droplets; c) reacting said molten droplets with said reactant to produce one or more oxide, nitride, carbide, silicide, or boride derivatives of said metallic component, wherein a portion of said metallic component reacts with said reactant to produce said oxide, nitride, carbide, suicide, and/or boride derivative of said metallic component and a portion of said metallic component remains unreacted; d) depositing said unreacted metallic component and said oxide, nitride, carbide, silicide, and/or boride derivative of said metallic component onto said substrate to produce a resistive layer; e) forming an electrically isolated, resistive heater path in said resistive layer by micromachining, microabrading, laser cutting, chemical etching, or e-beam etching; and f) connecting said resistive heater path of step (e) to a power supply, thereby fabricating a resistive heater.
- 59. A resistive layer comprising a metallic component and one or more oxide, nitride, carbide, silicide, and/or boride derivatives of said metallic component, wherein said resistive layer has a resistivity of 10−4 to 106 Ω·cm, wherein when said resistive layer comprises an oxide derivative, said resistivity is greater than 2×10−3 Ω·cm.
- 60. A method of fabricating a resistive layer on a substrate, said method comprising the steps of:
a) providing a substrate, a metallic component feedstock, and a reactant comprising one or more of oxygen, nitrogen, carbon, silicon, and boron; b) melting said feedstock to produce a stream of molten droplets; c) reacting said molten droplets with said reactant to produce one or more oxide, nitride, carbide, silicide, or boride derivatives of said metallic component, wherein a portion of said metallic component reacts with said reactant to produce said oxide, nitride, carbide, silicide, and/or boride derivative of said metallic component and a portion of said metallic component remains unreacted; d) depositing said unreacted metallic component and said oxide, nitride, carbide, silicide, and/or boride derivative of said metallic component onto said substrate to produce said resistive layer, wherein said melting step (b) and said reacting step (c) are coordinated such that the resistive layer of step (d) has a resistivity of 10−4 to 106 Ω·cm, and wherein when said resistive layer comprises an oxide derivative, said resistive layer has a resistivity of greater than 2×10−3 Ω·cm.
- 61. An array of heaters comprising at least two resistive heaters, wherein each of said resistive heaters comprises a resistive layer coupled to a power supply, each of said resistive layers comprising a metallic component and one or more oxide, nitride, carbide, silicide, and/or boride derivatives of said metallic component, wherein said resistive layers have a resistivity of 10−4 to 106 Ω·cm, and wherein application of current from said power supply to each of said resistive layers results in production of heat by each of said resistive layers.
- 62. The array of claim 61, wherein at least a portion of said heaters are independently coupled to said power supply.
- 63. The array of claim 61, further comprising a substrate, wherein at least a portion of one of said heaters is disposed between at least a portion of a second heater and said substrate.
- 64. A thermocouple comprising a first thermally sprayed layer in electrical contact with a second thermally sprayed layer, wherein the difference in the thermoelectric voltages of said first and second layers is temperature dependent.
- 65. An array of thermal sensors comprising at least two thermocouples, wherein each thermocouple comprises a first thermally sprayed layer in electrical contact with a second thermally sprayed layer, wherein the difference in the thermoelectric voltages of said first and second layers is temperature dependent.
- 66. The array of claim 65, wherein at least one of said thermocouples is independently connected to one or more voltmeters.
- 67. The array of claim 65, wherein said first layer comprises iron and said second layer comprises constantan.
- 68. A method of making an array of thermocouples, said method comprising the steps of:
(a) applying a plurality of regions of a first material on a surface; (b) applying a plurality of regions of a second material to produce a plurality of electrical junctions between said first and second material; and (c) providing electrical connections to each of said regions of said first material and to each of said regions of said second material, wherein the difference in the thermoelectric voltages of said first and second materials is indicative of the temperature of said surface.
- 69. The method of claim 68, wherein said regions of said second material are deposited on said surface.
- 70. The method of claim 68, further comprising step (d) coating said surface with an electrically insulating material.
- 71. The method of claim 68, wherein said regions of said first material or of said second material are applied by thermal spray.
- 72. A method of making an array of thermocouples, said method comprising the steps of:
(a) coating a substrate with a first layer of electrically conductive material; (b) defining a first set of contacts in said first layer of electrically conductive material; (c) applying a first thermocouple material on a portion of each of said first set of contacts to form a plurality of first thermocouple deposits, wherein a portion of said first set of contacts remains exposed; (d) applying an electrically insulating layer to a portion of each of said first thermocouple deposits, wherein a portion of each of said first deposits remains exposed; (e) applying a second thermocouple material to produce a plurality of second thermocouple deposits, wherein said first and second thermocouple deposits form a plurality of electrical junctions; (f) applying an electrically insulating layer to said first set of contacts; (g) coating said plurality of second deposits and said electrically insulating layer with a second layer of electrically conductive material; and (h) defining a second set of contacts in said second layer of electrically conductive material, wherein the difference in the thermoelectric voltages of said first and second materials is indicative of the temperature of said surface.
- 73. The method of claim 72, wherein said first thermocouple deposit comprises iron and said second thermocouple deposit comprises constantan.
- 74. The method of claim 72, wherein in step (c), the first thermocouple material is applied through a mask.
- 75. The method of claim 72, wherein in step (d) or (f), said electrically insulating layer is applied through a mask.
- 76. The method of claim 72, wherein in step (e), said second thermocouple material is applied through a mask.
- 77. The method of claim 72, wherein said defining in steps (b) and (h) comprises micromachining, microabrading, laser cutting, chemical etching, or e-beam etching.
- 78. The method of claim 72, wherein in step (a), said first electrically conducting layer is applied through a mask, and wherein said defining in step (b) comprises removing said mask.
- 79. The method of claim 72, wherein in step (g), said second electrically conducting layer is applied through a mask, and wherein said defining in step (h) comprises removing said mask.
- 80. The method of claim 72, wherein at least one of said first or second electrically conducting layers, said electrically insulating layers of steps (d) and (f), or said first or second thermocouple material is applied using thermal spray.
- 81. A combined array comprising an array of claim 61 and an array of claim 65.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of co-pending U.S. application Ser. No. 09/996,183, filed Nov. 28, 2001, which claims benefit from U.S. Provisional Application Serial No. 60/253,969, filed Nov. 29, 2000, each of which is hereby incorporated by reference.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60253969 |
Nov 2000 |
US |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09996183 |
Nov 2001 |
US |
Child |
10219589 |
Aug 2002 |
US |