Japanese Journal of Applied Physics, vol. 25, No. 8, Aug. 1986, "Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Gal-xAlx)0.48As (0.ltoreq.x.ltoreq.1) Heterostructures", by Sugiyama et al., pp. L648-L650. |
Applied Physics Letters, vol. 45, No. 12, Dec. 15, 1984, "Quantum Well Oscillators", by Sollner et al., pp. 1319-1321. |
Applied Physics Letters, vol. 48, No. 26, Jun. 30, 1986, "InGaAs/InAlAs Hot-Electron Transistor", Reddy et al., pp. 1799-1801. |
International Electron Devices Meeting, Technical Digest, Dec. 1-4, 1985, "Observation of Negative Conductance by Sequential Resonant Tunneling Through a One-Micron Thick Superlattice", by Capasso et al., pp. 764-765. |
"Excellent Negative Differential Resistance of InAlAs/InGaAs Inata et al., Resonant Tunneling Barrier Structures Grown by MBE", Japanese Journal of Applied Physics, vol. 25, No. 12, Dec. 1986, pp. L983-L985. |
Muto et al. "Quantum Well Width Dependence of Negative Differential Resistance of In0.52Al0.48As/In0.53Ga0.47As Resonant Tunneling Barriers Grown by MBE", Japanese Journal of Applied Physics, vol. 26, No. 3, Mar. 1987, pp. L220-L222. |
Osbourn, "Strained-Layer Superlattices from Lattice Mismatched Materials", J. Appl. Phys. vol. 53, No. 3, Mar. 1982. |
T. H. H. Vuong and D. C. Tsui, "Tunneling in In.sub.0.53 Ga.sub.0.47 As-InP Double-Barrier Structures", Appl. Phys. Lett., vol. 50(4) Jan. 1987. |