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H01L29/205

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/205in different semiconductor regions

Industries

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Patents Grantslast 30 patents

Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,206,000
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 12,199,000
- Issue date Jan 14, 2025
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure and transistor including the same
- Patent number 12,199,145
- Issue date Jan 14, 2025
- Xiamen Sanan Integrated Circuit Co., Ltd.
- Chih-Hung Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 12,199,174
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Junhyuk Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with multi-layer barrier region
- Patent number 12,183,816
- Issue date Dec 31, 2024
- Infineon Technologies Austria AG
- Korbinian Reiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical circuit of semiconductor channel resistor and apparatus...
- Patent number 12,176,306
- Issue date Dec 24, 2024
- Electronics and Telecommunications Research Institute
- Sang Heung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,176,343
- Issue date Dec 24, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and semiconductor device
- Patent number 12,176,430
- Issue date Dec 24, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device employing two-dimensional electron gas with reduc...
- Patent number 12,176,431
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Wen Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge balanced power Schottky barrier diodes
- Patent number 12,176,442
- Issue date Dec 24, 2024
- Virginia Tech Intellectual Properties, Inc.
- Yuhao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,170,318
- Issue date Dec 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 12,170,330
- Issue date Dec 17, 2024
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P type gallium nitride conformal epitaxial structure over thick buf...
- Patent number 12,170,328
- Issue date Dec 17, 2024
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 12,166,114
- Issue date Dec 10, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Jingyu Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gate terminal of a HEMT device, and HEMT...
- Patent number 12,165,871
- Issue date Dec 10, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,159,906
- Issue date Dec 3, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility group-III nitride transistors with strained channels
- Patent number 12,159,929
- Issue date Dec 3, 2024
- The Regents of the University of California
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,932
- Issue date Dec 3, 2024
- Kabushiki Kaisha Toshiba
- Jumpei Tajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride-based semiconductor devices on patterned substrates and...
- Patent number 12,154,864
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,154,980
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN/two-dimensional AlN heterojunction rectifier on silicon substra...
- Patent number 12,154,990
- Issue date Nov 26, 2024
- South China University of Technology
- Wenliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor
- Patent number 12,154,982
- Issue date Nov 26, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gökhan Atmaca
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor layer structure
- Patent number 12,148,821
- Issue date Nov 19, 2024
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,148,713
- Issue date Nov 19, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 12,148,823
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,142,646
- Issue date Nov 12, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplifier modules including semiconductor resistor and tantal...
- Patent number 12,143,077
- Issue date Nov 12, 2024
- Skyworks Solutions, Inc.
- Peter J. Zampardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure including alternating sets of channel and barrier l...
- Patent number 12,136,668
- Issue date Nov 5, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER AMPLIFIER SYSTEMS INCLUDING CONTROL INTERFACE AND WIRE BOND PAD
- Publication number 20250030386
- Publication date Jan 23, 2025
- Skyworks Solutions, Inc.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022873
- Publication date Jan 16, 2025
- Murata Manufacturing Co., Ltd.
- Masayuki AOIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20250015174
- Publication date Jan 9, 2025
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
- Publication number 20250015143
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FILMS INCLUDING SCANDIUM AT LOW TEMPERATURES USI...
- Publication number 20250017115
- Publication date Jan 9, 2025
- Akoustis, Inc.
- Craig Moe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015173
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20240429228
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES
- Publication number 20240420957
- Publication date Dec 19, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Contact Resistance in Semiconductor Devices with Implanted Regions
- Publication number 20240421193
- Publication date Dec 19, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE DEVICE
- Publication number 20240413212
- Publication date Dec 12, 2024
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240413236
- Publication date Dec 12, 2024
- Vanguard International Semiconductor Corporation
- Yang Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES
- Publication number 20240405105
- Publication date Dec 5, 2024
- Analog Devices, Inc.
- F. Jacob Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20240401238
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Kentaro NONAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240395919
- Publication date Nov 28, 2024
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUF...
- Publication number 20240387642
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Piao Chuu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240387170
- Publication date Nov 21, 2024
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES
- Publication number 20240387719
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride-Based Device with Step-Wise Field Plate and Method...
- Publication number 20240379836
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20240363344
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20240363697
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-An Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE
- Publication number 20240339505
- Publication date Oct 10, 2024
- PlayNitride Display Co., Ltd.
- Shen-Jie Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240339532
- Publication date Oct 10, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR, LOW NOISE AMPLIFIE...
- Publication number 20240332412
- Publication date Oct 3, 2024
- Huawei Technologies Co., Ltd
- Minglang YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20240332380
- Publication date Oct 3, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Ming-Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20240332411
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240322030
- Publication date Sep 26, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND SEMICONDUCTOR
- Publication number 20240321975
- Publication date Sep 26, 2024
- Murata Manufacturing Co., Ltd.
- Kenji SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240322008
- Publication date Sep 26, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND WIRELESS COMMUNICAT...
- Publication number 20240322028
- Publication date Sep 26, 2024
- Sony Semiconductor Solutions Corporation
- KATSUJI MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES AND METHODS...
- Publication number 20240322002
- Publication date Sep 26, 2024
- North Carolina State University
- Spyridon Pavlidis
- H01 - BASIC ELECTRIC ELEMENTS

in different semiconductor regions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High electron mobility transistor and method for forming the same

Semiconductor device structures and methods of manufacturing the same

Epitaxial structure and transistor including the same

High electron mobility transistor and method of manufacturing the same

Reducing off-state leakage in semiconductor devices

Type III-V semiconductor device with multi-layer barrier region

Electrical circuit of semiconductor channel resistor and apparatus...

Nitride-based semiconductor bidirectional switching device and meth...

Semiconductor structure and semiconductor device

Electronic device employing two-dimensional electron gas with reduc...

Charge balanced power Schottky barrier diodes

Nitride semiconductor, semiconductor device, and method for manufac...

Three dimensional vertically structured electronic devices

P type gallium nitride conformal epitaxial structure over thick buf...

Semiconductor device structures and methods of manufacturing the same

Method for manufacturing a gate terminal of a HEMT device, and HEMT...

Semiconductor device and fabrication method thereof

High mobility group-III nitride transistors with strained channels

Semiconductor device

III-nitride-based semiconductor devices on patterned substrates and...

Nitride-based semiconductor device and method for manufacturing the...

GaN/two-dimensional AlN heterojunction rectifier on silicon substra...

Gallium nitride transistor

Semiconductor layer structure

Semiconductor device and method for manufacturing the same

Double-channel HEMT device and manufacturing method thereof

Gallium nitride (GAN) three-dimensional integrated circuit technology

Nitride semiconductor, semiconductor device, and method for manufac...

Power amplifier modules including semiconductor resistor and tantal...

Heterostructure including alternating sets of channel and barrier l...

Patents Applicationslast 30 patents

POWER AMPLIFIER SYSTEMS INCLUDING CONTROL INTERFACE AND WIRE BOND PAD

SEMICONDUCTOR DEVICE

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS

METHODS OF FORMING FILMS INCLUDING SCANDIUM AT LOW TEMPERATURES USI...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES

Low Contact Resistance in Semiconductor Devices with Implanted Regions

GROUP III NITRIDE DEVICE

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES

LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUF...

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME

BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES

Gallium Nitride-Based Device with Step-Wise Field Plate and Method...

Epitaxies of a Chemical Compound Semiconductor

QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES

EPITAXIAL STRUCTURE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR, LOW NOISE AMPLIFIE...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

BIPOLAR TRANSISTOR AND SEMICONDUCTOR

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND WIRELESS COMMUNICAT...

HETEROGENEOUS HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES AND METHODS...