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H01L29/205

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/205in different semiconductor regions

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Compound semiconductor substrate including nitride semiconductor la...
- Patent number 12,230,679
- Issue date Feb 18, 2025
- Air Water Inc.
- Sumito Ouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating a semiconductor wafer
- Patent number 12,230,689
- Issue date Feb 18, 2025
- Infineon Technologies AG
- Helmut Brech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N based material structures, methods, devices and circuit modul...
- Patent number 12,230,678
- Issue date Feb 18, 2025
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device including hBNC layer,...
- Patent number 12,230,680
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Piao Chuu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum structure getter for radiation hardened transistors
- Patent number 12,230,677
- Issue date Feb 18, 2025
- The United States of America, as represented by the Secretary of the Navy
- Timothy Allen Morgan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with structured passivation
- Patent number 12,230,700
- Issue date Feb 18, 2025
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bypassed gate transistors having improved stability
- Patent number 12,230,701
- Issue date Feb 18, 2025
- MACOM Technology Solutions Holdings, Inc.
- Khaled Fayed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits with dual threshold voltage transistors and...
- Patent number 12,230,636
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PGaN enhancement mode HEMTs with dopant diffusion spacer
- Patent number 12,224,337
- Issue date Feb 11, 2025
- Intel Corporation
- Michael Beumer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 12,224,339
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure having diffusion barrier layer
- Patent number 12,224,322
- Issue date Feb 11, 2025
- GlobalWafers Co., Ltd.
- Tzu-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction semiconductor device with low on-resistance
- Patent number 12,224,340
- Issue date Feb 11, 2025
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,218,204
- Issue date Feb 4, 2025
- SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
- Ha Jong Bong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,218,128
- Issue date Feb 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor including field plate regions and manufacturing pro...
- Patent number 12,218,231
- Issue date Feb 4, 2025
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 12,218,233
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,211,839
- Issue date Jan 28, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,206,000
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 12,199,000
- Issue date Jan 14, 2025
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure and transistor including the same
- Patent number 12,199,145
- Issue date Jan 14, 2025
- Xiamen Sanan Integrated Circuit Co., Ltd.
- Chih-Hung Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 12,199,174
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Junhyuk Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with multi-layer barrier region
- Patent number 12,183,816
- Issue date Dec 31, 2024
- Infineon Technologies Austria AG
- Korbinian Reiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical circuit of semiconductor channel resistor and apparatus...
- Patent number 12,176,306
- Issue date Dec 24, 2024
- Electronics and Telecommunications Research Institute
- Sang Heung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and semiconductor device
- Patent number 12,176,430
- Issue date Dec 24, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,176,343
- Issue date Dec 24, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device employing two-dimensional electron gas with reduc...
- Patent number 12,176,431
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Wen Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge balanced power Schottky barrier diodes
- Patent number 12,176,442
- Issue date Dec 24, 2024
- Virginia Tech Intellectual Properties, Inc.
- Yuhao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,170,318
- Issue date Dec 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 12,170,330
- Issue date Dec 17, 2024
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...
- Publication number 20250063756
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES FOR INTEGRATED FRONT-END CIRCUITS
- Publication number 20250056878
- Publication date Feb 13, 2025
- MONDE Wireless Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250056827
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040174
- Publication date Jan 30, 2025
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...
- Publication number 20250040210
- Publication date Jan 30, 2025
- STMicroelectronics International N.V.
- Riccardo DEPETRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250040212
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Takuya KITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER AMPLIFIER SYSTEMS INCLUDING CONTROL INTERFACE AND WIRE BOND PAD
- Publication number 20250030386
- Publication date Jan 23, 2025
- Skyworks Solutions, Inc.
- Weimin Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022873
- Publication date Jan 16, 2025
- Murata Manufacturing Co., Ltd.
- Masayuki AOIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20250015174
- Publication date Jan 9, 2025
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
- Publication number 20250015143
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FILMS INCLUDING SCANDIUM AT LOW TEMPERATURES USI...
- Publication number 20250017115
- Publication date Jan 9, 2025
- Akoustis, Inc.
- Craig Moe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015173
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20240429228
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES
- Publication number 20240420957
- Publication date Dec 19, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Contact Resistance in Semiconductor Devices with Implanted Regions
- Publication number 20240421193
- Publication date Dec 19, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE DEVICE
- Publication number 20240413212
- Publication date Dec 12, 2024
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240413236
- Publication date Dec 12, 2024
- Vanguard International Semiconductor Corporation
- Yang Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES
- Publication number 20240405105
- Publication date Dec 5, 2024
- Analog Devices, Inc.
- F. Jacob Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20240401238
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Kentaro NONAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240395919
- Publication date Nov 28, 2024
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUF...
- Publication number 20240387642
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Piao Chuu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240387170
- Publication date Nov 21, 2024
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES
- Publication number 20240387719
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride-Based Device with Step-Wise Field Plate and Method...
- Publication number 20240379836
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20240363697
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-An Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxies of a Chemical Compound Semiconductor
- Publication number 20240363344
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- HUNG-WEI YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE
- Publication number 20240339505
- Publication date Oct 10, 2024
- PlayNitride Display Co., Ltd.
- Shen-Jie Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240339532
- Publication date Oct 10, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS

in different semiconductor regions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Compound semiconductor substrate including nitride semiconductor la...

Semiconductor device and method for fabricating a semiconductor wafer

III-N based material structures, methods, devices and circuit modul...

Manufacturing method of semiconductor device including hBNC layer,...

Quantum structure getter for radiation hardened transistors

Type III-V semiconductor device with structured passivation

Bypassed gate transistors having improved stability

Apparatus and circuits with dual threshold voltage transistors and...

PGaN enhancement mode HEMTs with dopant diffusion spacer

High electron mobility transistor

Epitaxial structure having diffusion barrier layer

Heterojunction semiconductor device with low on-resistance

Semiconductor device

Nitride-based semiconductor bidirectional switching device and meth...

HEMT transistor including field plate regions and manufacturing pro...

High electron mobility transistor and method of manufacturing the same

Nitride semiconductor device

High electron mobility transistor and method for forming the same

Semiconductor device structures and methods of manufacturing the same

Epitaxial structure and transistor including the same

High electron mobility transistor and method of manufacturing the same

Reducing off-state leakage in semiconductor devices

Type III-V semiconductor device with multi-layer barrier region

Electrical circuit of semiconductor channel resistor and apparatus...

Semiconductor structure and semiconductor device

Nitride-based semiconductor bidirectional switching device and meth...

Electronic device employing two-dimensional electron gas with reduc...

Charge balanced power Schottky barrier diodes

Nitride semiconductor, semiconductor device, and method for manufac...

Three dimensional vertically structured electronic devices

Patents Applicationslast 30 patents

P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...

DEVICES FOR INTEGRATED FRONT-END CIRCUITS

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR ELECTRONIC DEVICE INTEGRATING AN ELECTRONIC COMPONENT...

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

NITRIDE SEMICONDUCTOR DEVICE

POWER AMPLIFIER SYSTEMS INCLUDING CONTROL INTERFACE AND WIRE BOND PAD

SEMICONDUCTOR DEVICE

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS

METHODS OF FORMING FILMS INCLUDING SCANDIUM AT LOW TEMPERATURES USI...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES

Low Contact Resistance in Semiconductor Devices with Implanted Regions

GROUP III NITRIDE DEVICE

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES

LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUF...

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME

BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES

Gallium Nitride-Based Device with Step-Wise Field Plate and Method...

QUASI FIELD-PLATE STRUCTURE FOR SEMICONDUCTOR DEVICES

Epitaxies of a Chemical Compound Semiconductor

EPITAXIAL STRUCTURE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME