Patent Application
20180309091
The present disclosure relates to a restriction unit configured to restrict the passage of vapor deposition particles at a time of forming a vapor deposition film of a predetermined pattern on a target film forming substrate, a vapor deposition device including the restriction unit, a production method for a vapor deposition film for producing a vapor deposition film by using the vapor deposition device, a production method for an electroluminescence display device, and the electroluminescence display device.
An electro luminescence (hereinafter, “electro luminescence” is referred to as “EL”) display device equipped with an EL element making use of EL of an organic or inorganic material is a complete solid-state device, has self-luminosity, and is excellent in terms of low voltage driving and high responsiveness; such EL display device has been developed as a candidate of a next-generation display technology.
In general, an EL element is film-formed by a vacuum vapor deposition technique in which vapor deposition particles (target film formation components) are vapor-deposited on a target film forming substrate under reduced pressure (under high vacuum) through a vapor deposition mask (also called a shadow mask) where openings are formed in a predetermined pattern. At this time, a scan vapor deposition technique has promise as a large-size substrate film formation technique using a large-size substrate such as a mother substrate as the target film forming substrate. In this technique, a vapor deposition mask, a vapor deposition source, or the like whose size is equivalent to that of the large-size target film forming substrate is unnecessary.
In the scan vapor deposition technique, vapor deposition particles are vapor-deposited in all target film forming regions of the target film forming substrate while scanning the target film forming substrate by relatively moving at least one of the target film forming substrate and a set of the vapor deposition mask and the vapor deposition source by, for example, integrating the vapor deposition mask and the vapor deposition source, or the like. For the vapor deposition source, such a vapor deposition source is used that a plurality of vapor deposition source openings (nozzle section) used as emission openings through which vapor deposition particles are emitted are provided corresponding to each of the target film forming regions arranged in a direction orthogonal to a scanning direction in the target film forming substrate, at a constant pitch in the direction orthogonal to the scanning direction, for example.
As such, a restriction unit configured to restrict the passage of vapor deposition particles is provided in an emission path of the vapor deposition particles traveling from the vapor deposition source toward the target film forming substrate, in such a manner as to prevent the vapor deposition particles emitted from each of the vapor deposition source openings from being deposited in a region other than the target film forming region corresponding to each vapor deposition source opening.
For example, PTL 1 discloses a deposition preventing plate, as a restriction unit, including openings (restriction openings) each corresponding to a panel pattern section of a target film forming substrate. The deposition preventing plate disclosed in PTL 1 has a structure in which a plurality of openings are provided in a plate-like member, and a non-opening functions as a deposition preventing section (restriction section) configured to block or suppress a vapor deposition material supplied to a region other than a formation region of the panel pattern section in the target film forming substrate (in other words, a region other than the target film forming region).
PTL 1 states that, with the above-discussed scheme, useless usage of the vapor deposition material is prevented, and a recovery rate of the vapor deposition material having been not effectively used is raised.
PTL 1: JP 2004-199919 A (published on Jul. 15, 2004)
However, in the scan vapor deposition technique, since a gap is formed between the vapor deposition mask and the target film forming substrate, there is a case in which a tiny film is generated in a region other than a desired region in the target film forming substrate even in a case where the restriction unit is used. Such tiny film brings about a decrease in display quality such as display failure. As such, with the scan vapor deposition technique, the resolution of an obtainable film formation pattern is limited, thereby reducing versatility thereof.
A Y-axis in each of
As illustrated in
As illustrated in
The vapor deposition particles 301 emitted from the vapor deposition source opening 31 reaches a vapor deposition mask 10 with an incident angle thereof on a mask opening 12 of the vapor deposition mask 10 being restricted by the particles passing through a restriction plate opening 501 of the restriction unit 500. The vapor deposition particles 301 having passed through the mask opening 12 are deposited on the target film forming substrate 200, whereby a film formation pattern made of the vapor deposition film 302 is formed on the target film forming substrate 200.
Ideally speaking, a film thickness profile to be formed is determined by a nozzle diameter of the vapor deposition source opening 31 and a distance from the vapor deposition mask 10 to the target film forming substrate 200 (size of a gap “g” in the Z-axis direction), and takes a shape illustrated with a solid line in
However, in reality, as illustrated in
Because the vapor deposition particles 301 having adhered to the lower face 502a are close in distance to the vapor deposition source 30 as a heat source, the stated particles re-evaporate by being heated and adhere again as the vapor deposition objects 303 to an upper face 30a (surface) of the vapor deposition source 30.
The vapor deposition objects 303 having adhered again to the upper face 30a of the vapor deposition source 30 re-evaporate again because the vapor deposition source 30 is in a high temperature state. This brings about an effect in which the nozzle diameter is substantially expanded. Due to the vapor deposition objects 303 re-evaporating again, in addition to the vapor deposition particles 301 emitted from the vapor deposition source opening 31 as indicated by a dotted line in
As illustrated in
Accordingly, in the case of using the restriction unit 500, it is important to suppress the vapor deposition objects 303 adhering again to the vapor deposition source due to the re-evaporation of the vapor deposition objects 303 having adhered to the lower face 502a.
However, PTL 1 touches upon only the control of the flow of vapor deposition particles (vapor deposition flow), and touches upon neither the spread of vapor deposition particles between the vapor deposition source and the deposition preventing plate as a control unit nor the re-evaporation of the vapor deposition objects adhering to the lower face of the deposition preventing plate in any way.
The present disclosure has been conceived in view of the above problems, and an object thereof is to provide a restriction unit capable of suppressing re-evaporation of vapor deposition objects adhering to a face of the restriction unit opposing a vapor deposition source, a vapor deposition device, a production method for a vapor deposition film, a production method for an electroluminescence display device including a vapor deposition film of a highly precise pattern without adhesion of a tiny film due to the re-evaporation of the above vapor deposition objects, and the electroluminescence display device.
To address the above issues, a restriction unit according to an aspect of the present disclosure is a restriction unit that is configured to restrict the passage of vapor deposition particles emitted from a vapor deposition source and includes at least one opening configured to allow the vapor deposition particles to pass through and a plurality of non-openings prepared at both sides of the above opening. In the stated restriction unit, the non-opening has a cross-sectional shape of an inverse concave formed of a top wall and opening walls.
To address the above issues, a vapor deposition device according to an aspect of the present disclosure includes the restriction unit and the vapor deposition source that is disposed opposing the restriction unit and emits the vapor deposition particles.
To address the above issues, a production method for a vapor deposition film according to an aspect of the present disclosure includes forming a vapor deposition film of a predetermined pattern on a target film forming substrate using the above vapor deposition device.
To address the above issues, a production method for an electroluminescence display device according to an aspect of the present disclosure includes the production method for the vapor deposition film according to the above-mentioned aspect of the present disclosure.
To address the above issues, an electroluminescence display device according to an aspect of the present disclosure is an electroluminescence display device in which a first electrode, an electroluminescence layer formed of an organic or inorganic layer, and a second electrode are provided in that order on a substrate. In the stated electroluminescence display device, the electroluminescence layer includes a light emitting layer formed of a pattern of a vapor deposition film that is formed by vapor deposition particles having passed through an opening of a restriction unit including at least one opening configured to allow the vapor deposition particles emitted from a vapor deposition source to pass through and a plurality of non-openings prepared at both sides of the above opening where the non-opening has a cross-sectional shape of an inverse concave formed of a top wall and opening walls.
According to the aspects of the present disclosure, the following can be provided: a restriction unit capable of suppressing the re-evaporation of vapor deposition objects adhering to a face of the restriction unit opposing a vapor deposition source, a vapor deposition device, a production method for a vapor deposition film, a production method for an electroluminescence display device including a vapor deposition film of a highly precise pattern without the adhesion of a tiny film due to the re-evaporation of the above vapor deposition objects, and the electroluminescence display device.
A detailed description follows regarding embodiments of the present invention.
With reference to
In
The vapor deposition device 100 and a vapor deposition technique according to the present embodiment are particularly useful for vapor deposition of an EL layer such as a light emitting layer configuring an EL element in an EL display device such as an organic EL display device.
Hereinafter, exemplified is a case in which the vapor deposition device 100 and the vapor deposition technique according to the present embodiment are applied to a production of an RGB full color-display organic EL display device where organic EL elements of red (R), green (G), and blue (B) colors are arranged as sub pixels on a substrate thereof, and a light emitting layer of the organic EL element is film-formed by an RGB selective patterning method, for example.
In other words, hereinafter, a case in which a vapor deposition film 302 film-formed by the vapor deposition device 100 according to the present embodiment is a light emitting layer for each color of R, G, and B in the organic EL display device is exemplified and described. Note that, however, the present embodiment is not limited thereto, and the vapor deposition device 100 and the vapor deposition technique according to the present embodiment can be generally applied to the productions of devices using a vapor-phase growth technique including, as representative examples, the productions of organic EL display devices and inorganic EL display devices.
In the following description as well, a horizontal direction axis along a scanning direction on a target film forming substrate 200 is taken as a Y-axis; another horizontal direction axis along a direction orthogonal to the scanning direction on the target film forming substrate 200 is taken as an X-axis; and a vertical direction axis (up-down direction axis) that is orthogonal to the X-axis and the Y-axis, and is a normal direction of a target deposition surface 201 of the target film forming substrate 200 is taken as a Z-axis. For the sake of convenience in description, unless otherwise specifically mentioned, a side of an upward arrow in the Z-axis direction is taken as an upper side in the following description. In addition, unless otherwise specifically mentioned, “cross section” refers to a cross section parallel to the X-axis direction.
As illustrated in
The vapor deposition device 100 according to the present embodiment includes, as absolutely necessary constituent elements, a vapor deposition mask 10, the restriction unit 20, and a vapor deposition source 30.
A positional relationship among the vapor deposition mask 10, the restriction unit 20, and the vapor deposition source 30 is fixed. The restriction unit 20 and the vapor deposition source 30 may be respectively fixed within a film formation space (e.g., an inner wall of a film formation chamber 2), or may be unitized as a vapor deposition unit 1 whereby the positional relationship between them may be fixed. The vapor deposition mask 10, the restriction unit 20, and the vapor deposition source 30 may be fixed to each other with, for example, a rigid member (not illustrated) such as a holder (holding member), or may have independent configurations and operate as the vapor deposition unit 1 with a single control operation. At least one of the target film forming substrate 200 and a set of the vapor deposition mask 10, the restriction unit 20 and the vapor deposition source 30 relatively moves with respect to the other along the Y-axis direction which is the scanning direction as illustrated in
The vapor deposition device 100 according to the present embodiment includes, for example, the film formation chamber 2, a substrate carrying device 3 (substrate movement device), the vapor deposition mask 10, the restriction unit 20, the vapor deposition source 30, and further includes a mask holder, a substrate holder, a restriction unit holder, a deposition preventing member, a shutter, a control device, and the like (not illustrated).
Next, more detailed description follows regarding each of the configurations.
The target film forming substrate 200 used in the present embodiment will be described first.
As illustrated in
The target film forming substrate 200 is a mother substrate. In a mass-production process, a plurality of organic EL display devices 400 are formed on the mother substrate, and thereafter are divided into each individual organic EL display device 400.
The target film forming regions 202 are formed in a stripe pattern from one end to the other end of the target film forming substrate 200. In the periphery of each target film forming region 202, a non-film forming region 204 is provided to surround each target film forming region 202.
In each of the target film forming regions 202, provided are a plurality of pixel areas where a plurality of pixels 401 of the organic EL display devices 400 are arranged. With this, on the target film forming substrate 200, the pixel areas of the organic EL display devices 400 are formed in a two-dimensional (matrix) pattern.
Each of the pixels 401 in the pixel areas includes sub pixels 402 of colors of R, G, and B. As such, in each of the target film forming regions 202, a plurality of sub pixels 402 of respective colors made of organic EL elements of R, G, and B colors are provided, and a fine vapor deposition film pattern that is made of the vapor deposition films 302 of R, G, and B colors and is used as a light emitting layer of the organic EL element is formed as the vapor deposition film 302 in each sub pixel 402.
Although not illustrated, in the present embodiment, a drive circuit of the organic EL display device 400 and one of a pair of electrodes prepared at both sides of the light emitting layer in the organic EL element are formed in advance in each of the target film forming regions 202.
As illustrated in
The target film forming substrate 200 is held by a substrate holder (not illustrated). In a case where the vapor deposition mask 10, the restriction unit 20, and the vapor deposition source 30 are relatively moved with respect to the target film forming substrate 200 (in other words, in the case where, of the target film forming substrate 200 and the vapor deposition unit 1, only the vapor deposition unit 1 is moved), the substrate holder may be fixed to an inner wall of the film formation chamber 2.
As illustrated in
The vapor deposition mask 10 is held by a mask holder (not illustrated). In a case where only the target film forming substrate 200 is relatively moved with respect to the vapor deposition mask 10, the restriction unit 20, and the vapor deposition source 30, the mask holder may be fixed to the inner wall of the film formation chamber 2.
The vapor deposition mask 10 may be used as is, or may be fixed to a mask frame (not illustrated) in a state of tensile force being applied thereto in order to suppress self-weight bending. The mask frame is formed in a rectangular shape whose outer shape is the same as, or is a size slightly larger than that of the vapor deposition mask 10 in plan view.
As illustrated in
The mask openings 12 are provided corresponding to part of the patterns of the vapor deposition films 302 film-formed by the vapor deposition mask 10 in use so that the vapor deposition particles 301 do not adhere to a region other than the target film forming pattern region 203 as a film formation target on the target film forming substrate 200.
As illustrated in
In an example illustrated in
In addition, the material of the vapor deposition mask 10 is not limited to any specific one. The material of the vapor deposition mask 10 may be metal such as Invar (iron-nickel alloy), or may be resin or ceramics, or may be a material in which the cited materials are combined.
The vapor deposition source 30 is, for example, a container configured to store a vapor deposition material therein. The vapor deposition source 30 may be a container configured to directly store the vapor deposition material in the interior of the container, or may be formed in such a manner as to include load-lock type piping and be supplied with the vapor deposition material from exterior.
The vapor deposition source 30 is formed in a rectangular shape as illustrated in
The vapor deposition source 30 generates the vapor deposition particles 301 in a gaseous state by heating the vapor deposition material to evaporate it (in the case of the vapor deposition material being a liquid one) or sublimate it (in the case of the vapor deposition material being a solid one). The vapor deposition source 30 emits the vapor deposition material, having been gasified in the above manner, as the vapor deposition particles 301 toward the restriction unit 20 from the vapor deposition source openings 31.
In the present embodiment, as discussed above, a line vapor deposition source (line source) including the plurality of vapor deposition source openings 31 can be used as the vapor deposition source 30, and moreover it is possible to perform uniform film formation on the target film forming substrate 200 having a large area by moving the vapor deposition source 30 in the Y-axis direction. In this case, a decrease in throughput is not generated at the time of mass production, which is a large advantage of the present embodiment.
The vapor deposition source 30 may be held by a vapor deposition source holder (not illustrated), or may be fixed to the inner wall of the film formation chamber 2 in the case where only the target film forming substrate 200 is relatively moved with respect to the vapor deposition mask 10, the restriction unit 20, and the vapor deposition source 30.
The restriction unit 20 is provided between the vapor deposition mask 10 and the vapor deposition source 30, as illustrated in
The restriction unit 20 is held by a restriction unit holder (not illustrated). In the case where only the target film forming substrate 200 is relatively moved with respect to the vapor deposition mask 10, the restriction unit 20, and the vapor deposition source 30, the restriction unit holder may be fixed to the inner wall of the film formation chamber 2.
The restriction unit 20 is provided being distanced from the vapor deposition mask 10 and the vapor deposition source 30, and controls an isotropic flow of the vapor deposition particles 301 (vapor deposition flow) emitted from the vapor deposition source opening 31 to enhance the directivity.
In the present embodiment, since the scan vapor deposition is carried out as discussed above, any of the vapor deposition mask 10, the restriction unit 20, and the vapor deposition source 30 is formed to be smaller in size in the Y-axis direction than the target film forming substrate 200 in plan view. The size of the restriction unit 20 is equal to or larger than that of the vapor deposition mask 10 in plan view.
The restriction unit 20 is a hollow block-shaped unit without a base (in other words, a reverse tray-shaped unit) that is configured by a plate-like top wall 21 as a transverse plate disposed in the horizontal direction, a plurality of plate-like side walls 22 as longitudinal plates (vertical walls) each disposed in a direction intersecting with the horizontal direction, and a plurality of plate-like opening walls 23 (nozzle walls). The restriction unit 20 includes a plurality of restriction openings 24 as nozzle-like openings (through-holes) surrounded by the opening walls 23, and a restriction section 25 as a non-opening configured by the top wall 21, the side walls 22, and the opening walls 23.
The side walls 22 are formed projecting downward on the periphery of the top wall 21 while surrounding the top wall 21. The opening walls 23 are formed projecting downward on the periphery of each of the restriction openings 24 while surrounding the restriction opening 24.
In the present embodiment, the side walls 22 are vertically provided downward (vertically hung) from the top wall 21 in parallel to a normal direction of the top wall 21 in such a manner as to surround the top wall 21. The opening walls 23 are vertically provided downward (vertically hung) from the top wall 21 in parallel to the normal direction of the top wall 21 in such a manner as to surround the restriction opening 24.
The restriction openings 24 are arranged in the top wall 21 at a constant pitch along the X-axis direction in plan view. The restriction openings 24 each function as a passage port to allow the vapor deposition particles 301 (vapor deposition material) to pass through.
A portion other than the restriction opening 24 in the restriction unit 20 is the restriction section 25 as the non-opening. The restriction section 25 is a blocking section configured to block the flow of the vapor deposition particles 301, and takes a role of restricting an incident angle of the vapor deposition particles 301 entering the mask openings 12 of the vapor deposition mask 10.
The restriction unit 20 prevents, with the restriction section 25, the passage of the vapor deposition particles 301 supplied to a region other than the target film forming pattern region 203 in the target film forming substrate 200, and enhances the directivity of the vapor deposition particles 301 passing through the restriction openings 24.
As illustrated in
The restriction unit 20 partitions a space between the vapor deposition mask 10 and the vapor deposition source 30 into a plurality of vapor deposition spaces configured of the restriction openings 24 by the restriction sections 25.
The restriction opening 24 and the target film forming region 202 have a one-on-one relationship. Accordingly, the restriction opening 24 and the mask opening region 11 have a one-on-one relationship.
The pitch of the restriction openings 24 is formed to be larger than the pitch of the mask openings 12, and the plurality of mask openings 12 are arranged between the restriction sections 25 adjacent to each other at both sides of the restriction opening 24 in the X-axis direction in plan view.
The restriction openings 24 and the vapor deposition source openings 31 are formed at the same pitch in the X-axis direction. Due to this, the restriction openings 24 and the vapor deposition source openings 31 have a one-on-one relationship in the X-axis direction. Each of the vapor deposition source openings 31 is disposed corresponding to each of the restriction openings 24 in such a manner as to be positioned at the center position in the X-axis direction of each restriction opening 24 in plan view (in other words, at the center position in the X-axis direction between the restriction sections 25 adjacent to each other at both sides of each of the vapor deposition source openings 31 in the X-axis direction).
In the present embodiment, as illustrated in
Note that, however, the present embodiment is not limited thereto, and the vapor deposition source openings 31 may be arranged in a two-dimensional form (tiling form) in the X-axis and Y-axis directions. Also, in the case where the vapor deposition source openings 31 are two-dimensionally disposed, it is preferable for each vapor deposition source opening 31 to be so disposed as to be positioned at the center position in the X-axis direction of each restriction opening 24.
As discussed above, the restriction unit 20 according to the present embodiment is constituted of the top wall 21 in which the restriction openings 24 are provided, the side walls 22 that are so provided as to project downward from part of the top wall 21, and the opening walls 23.
Accordingly, a height d2 of the side wall 22 and the opening wall 23 is larger than a thickness d1 of the top wall 21, and each of the restriction sections 25 constituted of the top wall 21 and the side walls 22 or the opening walls 23 has a cross-sectional shape with the base open, that is, a cross-sectional shape of an inverse concave, as illustrated in
To be more specific, in the present embodiment, each restriction section 25 has a cross-sectional shape of a square with one side on the bottom side being open where the side walls 22 and the opening walls 23 are vertically hung (vertically provided downward) in the vertical direction from the top wall 21.
The thickness d1 of the top wall 21 indicates a length of the top wall 21 in the Z-axis direction (a normal direction of the top wall 21) which is a plate thickness of the top wall 21, that is, a distance from an upper face 21b to a lower face 21a of the top wall 21. The height d2 of the side wall 22 and the opening wall 23 indicates a height in the Z-axis direction of the side wall 22 and the opening wall 23, in other words, a distance in the Z-axis direction from the upper face 21b of the top wall 21 to a lower face 23a of the opening wall 23, and a distance in the Z-axis direction from the upper face 21b of the top wall 21 to a lower face of the side wall 22.
In the known scheme, as illustrated in
As illustrated in
As a method for reducing the re-evaporation of the vapor deposition objects 303 having adhered to the lower face 502a of the restriction section 502 as described above, a method to reduce the area of the lower face 502a of the restriction section 502 (Method 1), for example, can be conceived.
A project area of the restriction section 502 needs to be reduced in order to reduce the amount of vapor deposition objects 303 adhering to the lower face 502a of the restriction section 502 by reducing the area of the lower face 502a of the restriction section 502. However, because the restriction plate opening 501 and the target film forming region 202 correspond to each other on a one-on-one basis, the pitch of the restriction sections 502 adjacent to each other at both sides of the restriction plate opening 501 is changed when the project area of the restriction section 502 is changed. The pitch of the restriction sections 502 cannot be largely changed in consideration of the relationship with the target film forming region 202. Therefore, it is difficult to actually employ Method 1 discussed above.
As another method for reducing the re-evaporation of the vapor deposition objects 303 having adhered to the lower face 502a of the restriction section 502, a method to distance the lower face 502a of the restriction section 502 from the vapor deposition source 30 (Method 2), for example, can be conceived.
According to Method 2 mentioned above, the re-evaporation of the vapor deposition objects 303 can be reduced by reducing the radiation heat from the vapor deposition source 30 toward the vapor deposition objects 303 adhering to the lower face 502a. However, Method 2 mentioned above also has a problem.
As illustrated in
In the case where the vapor deposition particles 301 scattered from the adjacent nozzle and not expected to enter any openings pass through a certain restriction plate opening 501, the vapor deposition particles 301 from the adjacent nozzle are mixed in the vapor deposition film 302 to be film-formed, the scattering of the vapor deposition particles 301 is caused, or the like. The above phenomena cause the tiny film 304 as illustrated in
As another method to distance the lower face 502a of the restriction section 502 from the vapor deposition source 30 as described in Method 2 mentioned above, such a scheme can be conceived that the thickness of the restriction section 502 (in other words, the plate thickness of the restriction plate) is reduced while keeping the position of the upper face of the restriction section 502.
However, in the case where the overall thickness of the restriction section 502 is simply reduced by using, for example, a restriction plate with a thinned plate thickness or the like for the restriction section 502, a physical nozzle length of each of the restriction plate openings 501 is shortened, whereby an effect of improvement in collimator properties of the vapor deposition particles 301 is lowered and it is difficult to block the vapor deposition particles 301 scattering from the adjacent nozzle like in the case illustrated in
In contrast, by forming the cross section of the restriction section 25 in an inverse concave shape as discussed above, the height d2 of the opening wall 23 that determines the nozzle length of the restriction opening 24 makes it possible to distance most part of the face of the restriction section 25 opposing the vapor deposition source 30 from the vapor deposition source 30 while the height d2 maintaining a range defined by design.
In the present embodiment, as the thickness d1 of the top wall 21 is smaller, the influence of the radiation heat from the vapor deposition source 30 can be preferably reduced. Note that, however, when d1 is excessively small, the strength is lowered and the top wall 21 cannot be kept as a structural member. Accordingly, it is preferable for d1 to be not less than 1 mm, and more preferable to be not less than 5 mm.
The height d2 of the side wall 22 and the opening wall 23, particularly the height d2 of the opening wall 23 is not limited to any specific value as long as the relation of d1<d2 is satisfied as discussed above. As d2 is longer, a difference between d1 and d2 becomes larger and the radiation heat of the vapor deposition source 30 toward the top wall 21 is further reduced, whereby an effect of the reduction in re-evaporation of the vapor deposition objects 303 is further enhanced.
Further, as a thickness d3 of the open wall 23 and the side wall 22, particularly the thickness d3 of the opening wall 23 facing the restriction opening 24 is smaller, an absolute value of the adhesion amount of the vapor deposition objects 303 adhering to the lower face of the restriction section 25, that is, a face of the restriction section 25 opposing the vapor deposition source 30 (in other words, the lower face 23a of the opening wall 23 and the lower face of the side wall 22) can be preferably decreased.
Here, the thickness d3 of the opening wall 23 and the side wall 22 indicates a length in the X-axis direction of each of the opening wall 23 and the side wall 22, which is a plate thickness of the opening wall 23 and the side wall 22. To be more specific, the thickness d3 indicates the length of the lower face 23a of the opening wall 23 and the lower face of the side wall 22 in the X-axis direction of each thereof.
However, when d3 is excessively small, the strength is lowered like in the case of d1 and the wall having such d3 cannot be kept as a structural member. Accordingly, it is preferable for d3 to be not less than 1 mm, and more preferable to be not less than 5 mm.
The values of d1 and d3 may be the same or may be different. However, processing is more easily carried out when the values of d1 and d3 are the same. In other words, the restriction unit 20 can be produced with ease.
In the present embodiment, the following case is exemplified and explained: the height of the opening wall 23 illustrated in
However, also in the present embodiment, as long as the height of the opening wall 23 (d2) is larger than the thickness d1 of the top wall 21, it may be acceptable that the height of the opening wall 23 and the height of the side wall 22 are the same or are different.
In the case where, of the vapor deposition particles 301 emitted from the vapor deposition source 30, unnecessary vapor deposition particles 301 not used for the film formation of the vapor deposition film 302 in the target film forming region 202 can be prevented from entering the mask opening 12, it is not absolutely necessary to provide the side walls 22 in the restriction unit 20.
Furthermore, according to the present embodiment, by forming the cross section of the restriction section 25 in an inverse concave shape as described above, a distance β from the lower face 21a of the top wall 21 to the upper face 30a of the vapor deposition source 30 can be set to the same height as the distance γ2 from the lower face 502a of the restriction section 502 of the restriction unit 20 illustrated in
The distance α from the lower face 23a of the opening wall 23 as well as the lower face of the side wall 22 to the upper face 30a of the vapor deposition source 30, particularly the distance α from the lower face 23a of the opening wall 23 to the upper face 30a of the vapor deposition source 30 is not limited to any specific length. However, in the case where the distance α is excessively long like the case of the distance γ2 illustrated in
On the other hand, in the case where the distance α is excessively short, the influence of the radiation heat from the vapor deposition source 30, particularly the influence of the radiation heat from the vapor deposition source 30 toward the lower face 23a of the opening wall 23 and the lower face of the side wall 22 becomes large. Accordingly, it is preferable for the distance α to be not less than 1 mm, and more preferable to be not less than 10 mm.
In a case where a shutter (not illustrated) is inserted between the lower face 23a of the opening wall 23 as well as the lower face of the side wall 22 and the upper face 30a of the vapor deposition source 30, specifically between the lower face 23a of the opening wall 23 as well as the lower face of the side wall 22 and the upper face 30a of the vapor deposition source 30 in a range between the vapor deposition source openings 31 adjacent to each other, it is preferable to satisfy a relation of α≥20 mm.
It is sufficient that the lengths in the X-axis and Y-axis directions of the top wall 21 surrounding the respective restriction openings 24 and the length in the Y-axis direction of the opening wall 23 and the side wall 22 are appropriately set in accordance with the sizes of the target film forming region 202 and the non-film forming region 204 in the target film forming substrate 200, the size of the restriction opening 24 corresponding to the size of the target film forming region 202, and the like. Accordingly, these lengths are not limited to any specific values.
In the film formation chamber 2, in order to keep the inside of the film formation chamber 2 in a vacuum state at the time of vapor deposition, there is provided a vacuum pump (not illustrated) configured to perform vacuum exhaust operation to form a vacuum inside the film formation chamber 2 through an exhaust port (not illustrated) provided in the film formation chamber 2. The control device configured to control actions of the vacuum pump and the vapor deposition device 100 is provided outside the film formation chamber 2. The substrate carrying device 3, the vapor deposition mask 10, the restriction unit 20 and the vapor deposition source 30; and a mask holder, a substrate holder, a deposition preventing member and a shutter (these are not illustrated) are provided inside the film formation chamber 2.
The vapor deposition device 100 according to the present embodiment includes at least one of the substrate carrying device 3 and a not illustrated vapor deposition unit carrying device (vapor deposition unit movement device), for example. With this configuration, in the present embodiment, scan vapor deposition is carried out by relatively moving the target film forming substrate 200 and the vapor deposition unit 1 including the vapor deposition mask 10, the restriction unit 20, and the vapor deposition source 30 in such a manner as to make the Y-axis direction be the scanning direction.
The substrate carrying device 3 and the vapor deposition unit carrying device are not limited to any specific devices, and various types of known movement devices such as a roller type movement device and a hydraulic movement device, for example, can be used.
Note that, however, it is sufficient that at least one of the target film forming substrate 200 and the vapor deposition unit 1 is provided in a relatively movable manner. Accordingly, it is also sufficient that at least one of the substrate carrying device 3 and the vapor deposition unit carrying device is provided, and one of the target film forming substrate 200 and the vapor deposition unit 1 may be fixed to the inner wall of the film formation chamber 2 as discussed above.
In the present embodiment, the vapor deposition is carried out while at least one of the target film forming substrate 200 and the vapor deposition unit 1 being relatively moved in the Y-axis direction, as discussed above.
A production method for a vapor deposition film according to the present embodiment includes: a disposing process in which the vapor deposition unit 1 and the target film forming substrate 200 are disposed opposing each other and being distanced from each other by a constant distance; an alignment process in which alignment of relative positions of the vapor deposition mask 10 and the target film forming substrate 200 is carried out using alignment markers (not illustrated) provided on the vapor deposition mask 10 and the target film forming substrate 200 respectively, and adjustment of a gap between the vapor deposition mask 10 and the target film forming substrate 200 (gap control) is carried out; and a deposition process in which the vapor deposition particles 301 emitted from the vapor deposition source 30 are deposited on the target film forming substrate 200 through the restriction unit 20 and the vapor deposition mask 10 while relatively moving, in plan view, at least one of the vapor deposition unit 1 and the target film forming substrate 200 in the scanning direction (in other words, the Y-axis direction, which is a direction orthogonal to the X-axis direction in which the restriction openings 24 are arranged).
As the vapor deposition film 302, selective patterning layers (e.g., light emitting layers of respective colors) in an organic EL display device can be cited, for example.
The restriction unit 20 according to the present embodiment, the vapor deposition device 100 using the restriction unit 20, and the production method for the vapor deposition film using the vapor deposition device 100 can be appropriately applied to a production method for an EL element and an EL display device including the stated EL element.
Examples of an EL display device produced by the vapor deposition device 100 and a production method for the stated display device will be described below. Hereinafter, the organic EL display device 400 is cited and described as an example of the above-mentioned EL display device. In the following description, “organic EL display device” can be rephrased as “inorganic EL display device” or “EL display device”. Likewise, “organic EL layer” can be rephrased as “inorganic EL layer” or “EL layer”.
As illustrated in
The TFT substrate 410 is provided with an insulating substrate 411, as a support substrate, made of a glass substrate, a plastic substrate, or the like. A TFT 412, signal lines 413, an interlayer insulating film 414, and the like are provided on the insulating substrate 411.
The signal lines 413 are configured of a plurality of gate lines, a plurality of source lines, a plurality of power source lines, and the like. In each of regions surrounded by these signal lines 413 in a lattice form, the sub pixels 402 of respective colors are disposed. For example, a set of sub pixels 402 of red (R), green (G), and blue (B) forms one pixel 401 (see
The sub pixels 402 respectively include the TFTs 412. The TFTs 412 are each connected to the signal lines 413, where the sub pixel 402 to which a signal is inputted is selected by the gate line, an amount of charge to be inputted to the selected sub pixel 402 is determined by the source line, and a current is made to flow into the organic EL element 420 from the power source line.
The TFTs 412 and the signal lines 413 are covered with the interlayer insulating film 414. As a material of the interlayer insulating film 414, an insulative material such as an acrylic resin or a polyimide resin, for example, can be used. It is sufficient for the thickness of the interlayer insulating film 414 to be such that a step on an upper face of the TFT 412 and the signal line 413 can be removed, and thus the thickness thereof is not limited to any specific value.
The organic EL element 420 is configured of a first electrode 421 (positive electrode), an organic EL layer 422, a second electrode 423 (negative electrode), and the like.
The first electrode 421 is formed on the interlayer insulating film 414. The first electrode 421 injects (supplies) holes into the organic EL layer 422, while the second electrode 423 injects electrons into the organic EL layer 422. The first electrode 421 is electrically connected with the TFT 412 via a contact hole 414a formed in the interlayer insulating film 414.
An end portion of the first electrode 421 is covered with an edge cover 415. The edge cover 415 is an insulating layer, and is constituted with a photosensitive resin, for example. The edge cover 415 prevents a short circuit with the second electrode 423 at the end portion of the first electrode 421 due to electrode concentration, the organic EL layer 422 being thinned, or the like. Further, the edge cover 415 also functions as a pixel separation film to prevent the current from being leaked to adjacent sub pixels 402.
An opening 415a is provided in the edge cover 415 for each of the sub pixels 402. An exposed portion of the first electrode 421 by the above opening 415a becomes a light emitting region of each sub pixel 402.
The organic EL layer 422 is provided between the first electrode 421 and the second electrode 423. The organic EL layer 422 has a structure in which, as organic layers, a hole injection and transport layer 422a, a light emitting layer 422b, an electron transport and injection layer 422c, and the like are layered in that order from the first electrode 421 side, for example.
The organic layers other than the light emitting layer 422b are not absolutely necessary layers, and may be appropriately formed in accordance with required characteristics of the organic EL element 420. As such, it is sufficient that the organic EL layer 422 includes the light emitting layer 422b; that is, the organic EL layer 422 may be the light emitting layer 422b itself, or may include the light emitting layer 422b and a layer other than the light emitting layer 422b.
The light emitting layer 422b is a layer having a function to recombine the holes injected from the first electrode 421 side and the electrons injected from the second electrode 423 side so as to emit light. The light emitting layer 422b is formed with a material of high light emitting efficiency such as low molecular weight fluorescent colorant or a metal complex.
Note that, a single layer may have a plurality of functions. For example, the hole injection and transport layer 422a may have a structure in which a hole injecting layer and a hole transport layer are provided as separate layers, or may be a hole injection-cum-transport layer including functions of both the stated layers. Likewise, the electron transport and injection layer 422c may have a structure in which an electron injecting layer and an electron transport layer are provided as separate layers, or may be an electron injection-cum-transport layer including functions of both the stated layers. A carrier blocking layer may be appropriately provided between the respective layers.
Although, in
In a case where the organic EL display device 400 is a bottom-emitting type device configured to radiate light from a rear face side of the insulating substrate 411, it is preferable that the second electrode 423 be formed with a reflective electrode material, and that the first electrode 421 be formed with a transparent electrode material being transparent or semi-transparent.
On the other hand, in a case where the organic EL display device 400 is a top-emitting type device configured to radiate light from the sealing layer 430 side, it is preferable that the first electrode 421 be formed with a reflective electrode material, and that the second electrode 423 be formed with a transparent electrode material being transparent or semi-transparent.
The sealing layer 430 is formed on the second electrode 423 to cover the second electrode 423, the organic EL layer 422, the edge cover 415, the interlayer insulating film 414, and the like. An organic layer (not illustrated) may be provided between the second electrode 423 and the sealing layer 430 in order to adjust optical characteristics.
The sealing layer 430 prevents the organic EL element 420 from being degraded by moisture, oxygen, or the like entering from exterior. The sealing layer 430 is constituted of, for example, an inorganic film, a layered film of an inorganic film and an organic film, or the like. As an example, silicon nitride, silicon oxide, or the like can be cited.
The organic EL display device 400 controls a voltage applied across the second electrode 423 and the first electrode 421 through the TFT 412 by a drive circuit (not illustrated), thereby making the light emitting layer 422b emit light so as to perform display.
As illustrated in
Hereinafter, with reference to
First, the TFT 412, the signal line 413, and the like are formed on the insulating substrate 411 by a known method. Next, a photosensitive resin is applied on the insulating substrate 411 to cover the TFT 412 and the signal line 413, and patterning is performed by a photolithographic technique. With this, the interlayer insulating film 414 is formed on the insulating substrate 411.
Next, the contact hole 414a used for electrically connecting the first electrode 421 to the TFT 412 is formed in the interlayer insulating film 414.
Subsequently, the first electrode 421 is formed on the interlayer insulating film 414. The first electrode 421 can be formed as follows: a conductive film (electrode film) is film-formed on the interlayer insulating film 414, photoresist is applied onto the conductive film, and patterning is performed using the photolithographic technique; and thereafter etching is performed on the conductive film and the photoresist is separated.
The sputtering, vacuum vapor deposition technique, CVD, plasma CVD, printing method, or the like can be used for layering the above conductive film.
Hereinafter, a case in which the restriction unit 20 and the vapor deposition device 100 including the restriction unit 20 according to the present embodiment are used at least for the film formation of the light emitting layer 422b of the organic EL layer 422 is cited as an example and explained. However, it goes without saying that the restriction unit 20 and the vapor deposition device 100 according to the present embodiment can be used for the film formation of the above-mentioned conductive film.
Next, the edge cover 415 is formed in a predetermined pattern. Through the above-discussed steps, the TFT substrate 410 and the first electrode 421 are produced (S1).
Next, pressure reduction baking processing for dehydration is performed on the TFT substrate 410 on which the first electrode 421 is formed, and further oxygen plasma processing is performed for surface washing of the first electrode 421.
Thereafter, the organic EL layer 422 including the light emitting layer 422b is film-formed on the TFT substrate 410 (S2).
The ink-jet method, printing method, vacuum vapor deposition technique, CVD, plasma CVD, or the like can be used for the film formation of the organic EL layer 422. In the present embodiment, as described above, the production method for the vapor deposition film using the restriction unit 20 and the vapor deposition device 100 is applied at least to the film formation of the light emitting layer 422b of the organic EL layer 422. The production method for the vapor deposition film using the restriction unit 20 and the vapor deposition device 100 may be applied to the film formation of the hole injection and transport layer 422a, the electron transport and injection layer 422c, and the like, by changing the mask pattern shape of the vapor deposition mask 10.
In the present embodiment, a vapor deposition process of the hole injection and transport layer (S11), a vapor deposition process of the light emitting layer (S12), and a vapor deposition process of the electron transport and injection layer (S13) are carried out in that order as the vapor deposition process of the organic EL layer (S2). In other words, the vapor deposition process of the organic EL layer (S2) according to the present embodiment may include the vapor deposition process of the hole injection and transport layer (S11), the vapor deposition process of the light emitting layer (S12), and the vapor deposition process of the electron transport and injection layer (S13). Note that the order of the steps (processes) indicated by S11 to S13 mentioned above is reversed in a case where the first electrode 421 is taken as a negative electrode and the second electrode 423 is taken as a positive electrode. In a case of the organic EL layer 422 being formed of the light emitting layer 422b, the vapor deposition process of the organic EL layer (S2) refers to the vapor deposition process of the light emitting layer (S12).
In the vapor deposition process of the organic EL layer (S2), the above-described production method for the vapor deposition film according to the present embodiment is applied at least in the vapor deposition process of the light emitting layer (S12). In other words, in the present embodiment, at least the light emitting layer 422b of each of the sub pixels 402 is produced (film-formed) by the production method for the vapor deposition film according to the present embodiment.
Because of this, at least the vapor deposition process of the light emitting layer (S12) includes, for example, the aforementioned alignment process and deposition process. Also, in the processes other than the vapor deposition process of the light emitting layer (S12), it goes without saying that the process to which the production method for the vapor deposition film according to the present embodiment is applied includes the aforementioned alignment process and deposition process.
In the vapor deposition process of the organic EL layer (S2), the TFT substrate 410 on which the first electrode 421 and the edge cover 415 prepared in the preparation process of the TFT substrate and the first electrode (S1) are formed, is used as the target film forming substrate 200. In other words, in the vapor deposition process of the organic EL layer (S2), used is the target film forming substrate 200 where, as one of the pair of electrodes prepared at both sides of the light emitting layer 422b, the first electrode 421 is provided beforehand in the target film forming region 202. At this time, by using a mother substrate, as the target film forming substrate 200, in which a plurality of target film forming regions 202 to become formation regions of the organic EL display devices 400 are provided and from which the plurality of organic EL display devices 400 can be cut out, a production method supporting the mass production process can be realized. In the case of using a mother substrate for the target film forming substrate 200, after the sealing process (S4), a partitioning process (S5, an organic EL display device cutout process, not illustrated) is additionally carried out in which the plurality of organic EL display devices 400 are cut out from the mother substrate by partitioning the stated mother substrate.
In
Next, the second electrode 423 is formed across the whole display region of the TFT substrate 410 in such a manner as to cover the organic EL layer 422 (S3).
The second electrode 423 can be formed by the same method as that of the hole injection and transport layer 422a, the electron transport and injection layer 422c, or the like, for example. Accordingly, the restriction unit 20 and the vapor deposition device 100 can also be used for the film formation of the second electrode 423.
By the method discussed above, the organic EL element 420 formed of the first electrode 421, the organic EL layer 422, and the second electrode 423 can be formed on the TFT substrate 410.
Thereafter, the sealing layer 430 is formed on the second electrode 423 to cover the second electrode 423. The sputtering, vacuum vapor deposition technique, CVD, plasma CVD, printing method, or the like can be used for forming the sealing layer 430 in a case of the sealing layer 430 being a sealing film. In the case of the sealing layer 430 being a sealing film, the restriction unit 20 and the vapor deposition device 100 according to the present embodiment may be used for the film formation of the sealing layer 430.
The sealing layer 430 may be a sealing substrate made of an insulating substrate such as a glass substrate or a plastic substrate. In this case, an insulating substrate having substantially the same size as the insulating substrate 411 may be used for the sealing layer 430, and the partitioning may be performed, after having sealed the organic EL element 420, in accordance with the size of the target organic EL display device 400. Indented glass may be used as a sealing substrate, and the sealing layer 430 may be formed by performing sealing in a frame shape using a sealing resin, frit glass, or the like. Alternatively, the sealing layer 430 made of a sealing substrate and a resin may be formed by filling the resin between the TFT substrate 410 and the sealing substrate.
As discussed thus far, in the production processes of the organic EL display device 400 according to the present embodiment, it is sufficient that at least any one of the vapor deposition process of the organic EL layer (S2), the vapor deposition process of the second electrode (S3), and the sealing process (S4) includes the aforementioned alignment process and deposition process. Further, it is sufficient for the organic EL display device 400 according to the present embodiment to include a pattern of the vapor deposition film 302 formed with the vapor deposition particles 301 having passed through the restriction opening 24 of the restriction unit 20.
However, because the vapor deposition process of the light-emitting layer (S12) includes the alignment process and the deposition process, the light emitting layer 422b having a high resolution pattern without a pattern blur, a color mix, or the like due to the adhesion of the tiny film 304 (see
According to the present embodiment, as illustrated in
As such, according to the present embodiment, because the radiation heat from the vapor deposition source 30 toward the restriction section 25 can be reduced and the temperature of the lower face of the restriction section 25 can be lowered, the re-evaporation of the vapor deposition objects 303 adhering to the restriction section 25 can be reduced. As a result, abnormal film formation like the tiny film 304 can be prevented because re-adhesion of the vapor deposition objects 303 to the vapor deposition source 30 caused by the re-evaporation of the vapor deposition objects 303 having adhered to the restriction section 25 can be suppressed or prevented.
A side surface of each of the opening wall 23 and the side wall 22, in other words, a Z-Y plane of the restriction section 25 is not heated to a high temperature in comparison with the lower face of restriction section 25, so that the amount of re-evaporation is physically small. In reality, significant amounts of re-evaporation from the side surfaces of the opening wall 23 and the side wall 22 were not observed in experiment using an actual device, and as illustrated in
According to the present embodiment, it is possible to provide an EL display device, such as the organic EL display device 400, that includes a high resolution pattern without the adhesion of the tiny film 304, and exhibits higher display quality than the existing display device.
An equation of d1=d3 holds in each restriction unit 20 illustrated in
In the restriction unit 20 of
As illustrated in
Meanwhile, as illustrated in
Further, in the case where the cross section of the restriction section 25 is formed in a T shape, since the lower face 23a of the opening wall 23 is not present near the vapor deposition source opening 31, a physical nozzle length of each of the restriction openings 24 is substantially equal to the thickness d1 of the top wall 21. As such, in the case where the cross section of the restriction section 25 is formed in an inverse concave shape, the physical nozzle length of each of the restriction openings 24 is longer than that in the case where the cross section of the restriction section 25 is formed in a T shape. Because of this, in the case where the cross section of the restriction section 25 is formed in an inverse concave shape, an effect of improvement in collimator properties of the vapor deposition particles 301 is enhanced in comparison with the case where the cross section of the restriction section 25 is formed in a T shape.
In the present embodiment, as illustrated in
It is not absolutely necessary for the top wall 21 and the opening wall 23 to have uniform thicknesses, and they may have different thicknesses from each other. Accordingly, as illustrated in
As discussed above, it is sufficient that each restriction section 25 of the restriction unit 20 according to the present embodiment has a cross-sectional shape of an inverse concave with the base open, in other words, a shape in which the base surface is recessed toward the inner side.
Further, in the present embodiment, although the case in which the restriction unit 20 includes the plurality of restriction openings 24 arranged in the X-axis direction is cited as an example and explained, the present embodiment is not limited thereto. It is sufficient that the restriction unit 20 includes at least one restriction opening 24 and is provided with the plurality of restriction sections 25, prepared at both sides of the restriction opening 24, each having the top wall 21 and vertical walls including the opening walls 23, and that these restriction sections 25 have a cross-sectional shape of an inverse concave as discussed above. Even in a case where only one target film forming region 202 is provided on the target film forming substrate 200 and only one restriction opening 24 is provided, the above-described effect can be obtained.
Furthermore, in the present embodiment, the case in which a line vapor deposition source including the plurality of vapor deposition source openings 31 (nozzle section) in the X-axis direction is used for the vapor deposition source 30, is cited as an example and explained. However, as discussed above, in the case where there is provided only one restriction opening 24, it is sufficient for the vapor deposition source 30 to include one vapor deposition source opening 31.
For example, as illustrated in
Moreover, the restriction unit 20, the vapor deposition unit 1, and the vapor deposition device 100 according to the present embodiment can be appropriately used for the scan vapor deposition as discussed above. However, the present embodiment is not limited thereto. The restriction unit 20, the vapor deposition unit 1, and the vapor deposition device 100 can be appropriately used in the following: (1) a method in which vapor deposition is performed while fixing each of positional relationships among the target film forming substrate 200, the vapor deposition mask 10, the restriction unit 20, and the vapor deposition source 30, (2) vapor deposition in which film formation is performed by sequentially moving the vapor deposition mask 10 relative to the target film forming substrate 200 and causing the mask to adhere (contact) for each movement, or the like. Even in the case of using the restriction unit 20 in this type of vapor deposition scheme, the use of the restriction unit 20 makes it possible to improve at least film thickness distribution in the X-axis direction and achieve the above-mentioned effect.
A description follows regarding a second embodiment, with reference to
In
As illustrated in
As illustrated in
As such, in the present embodiment, each of the restriction sections 25 has a cross-sectional shape of an inverse concave in which the opening walls 23 prepared at both sides of the top wall 21 are slanted to spread toward the outer side relative to the normal direction of the top wall 21 (in other words, a reversely tapered cross-sectional shape in which the top wall 21 side is narrower than the vapor deposition source 30 side). That is to say, in the present embodiment, the cross-sectional shape of each restriction section 25 is changed from a general rectangular parallelepiped shape illustrated in
Hereinafter, design of the restriction unit 20 according to the present embodiment will be described additionally referring to
As discussed above, each of the restriction sections 25 of the restriction unit 20 according to the present embodiment has a cross section formed in a trapezoidal shape with a vacant interior. Because of this, as illustrated in
Accordingly, in the restriction unit 20, as illustrated in
Here, in the present embodiment, the length L1 can be rephrased as a distance between opening ends on the top wall 21 side of the opening walls 23 adjacent to each other in the X-axis direction in each of the restriction sections 25, that is, a distance between the opening ends of the opening walls 23 adjacent to each other in the X-axis direction on a face of each restriction section 25 opposing the vapor deposition mask 10. Further, the length L2 can be rephrased as a distance between the opening ends of the opening walls 23 adjacent to each other in the X-axis direction on a surface of each restriction section 25 opposing the vapor deposition source 30. To be more specific, in a case where an outer shape of a cross section of each of the restriction sections 25 parallel to the X-axis direction is taken as a trapezoid, the length L1 indicates the length of the upper base of the trapezoid, and the length L2 indicates the length of the lower base of the trapezoid.
Neither L1 nor L2 is limited to any specific value as long as a relation of L1<L2 is satisfied. Note that the opening width ϕ1 and the length L2 in the X-axis direction of the outer shape of each restriction section 25 in plan view are determined by the vapor deposition angle θ1 with respect to the target film forming region 202 in such a manner as for the vapor deposition film 302 to be formed across the whole of each target film forming region 202 in the X-axis direction. Preferable design of the restriction unit 20 will be described below.
A range in the X-axis direction of the vapor deposition flow in the case where the outer shape of the cross section of each of the restriction sections 25 has a cross-sectional shape of a rectangular parallelepiped, in other words, the size in the X-axis direction of the target film forming region 202 brought by the above vapor deposition flow is determined by the opening width ϕ3 in the X-axis direction at the upper portion of restriction opening 24.
Here, the case where the outer shape of the cross section of each of the restriction sections 25 has a cross-sectional shape of a rectangular parallelepiped refers to a case where the restriction sections 25 have a cross-sectional shape of a square with one side open in which the opening walls 23 are vertically hung in the vertical direction (vertically provided downward) from the top wall 21 like in the first embodiment, or a case where each restriction section is made of a plate called a restriction plate like in the known technique. In other words, in the present embodiment, the outer shape of the cross section of each restriction section 25 refers to a shape connecting the base in the case where the base of each restriction section 25 is open (that is, a shape connecting the lower faces 23a of the opening walls 23 of the restriction section 25, for example).
As illustrated in
When the length L2 exceeds the above-mentioned range (in other words, when the outer edge in the X-axis direction of the lower face 23a of the opening wall 23 exceeds the above hatched portion P), an available vapor deposition range becomes smaller than a vapor deposition range in the case of the outer shape of the cross section of each restriction section 25 taking a cross-sectional shape of a rectangular parallelepiped. Therefore, it is advisable for the length L2 to be set within the above-mentioned range. Further, in order to enhance, to the maximum, the effect of cutting an unnecessary vapor deposition flow under the restriction section 25, it is more preferable that the length L2 be given by an equation of L2=L1+ϕ3−ϕ1 (in other words, the outer edge in the X-axis direction of the lower face 23a of the opening wall 23 be positioned at an end portion on the restriction opening 24 side in the hatched portion P).
Like in the first embodiment, in the case where the height of the opening wall 23 (that is, the height in the Z-axis direction of the opening wall 23 and a distance in the Z-axis direction from the upper face 21b of the top wall 21 to the lower face 23a of the opening wall 23) is taken as d2, a preferable value of L2 is indicated by an equation of L2=L1+2*d2*tan θ1.
Further, as illustrated in
The vapor deposition angle θ1 is determined from the opening width ϕ1 of the restriction opening 24, the size in the X-axis direction of the vapor deposition source opening 31 (nozzle diameter ϕ2), and the distance α from the lower face 23a of the opening wall 23 to the upper face 30a of the vapor deposition source 30.
As can be understood from
Further, as illustrated in
In the case where the taper angle θ2 is smaller than the vapor deposition angle θ1, there is a possibility that the vapor deposition flow restricted at the entrance of the restriction opening 24 on the vapor deposition source 30 side (in other words, at the opening on the lower face side of the restriction unit 20) is cut (blocked, captured) at the upper face of the opening wall 23 of the restriction section 25.
Further, it is ideal that a taper angle θ3 (see
That is to say, it is preferable that, as illustrated in
However, the present embodiment is not limited thereto, and the taper angle θ3 may be larger than the taper angle θ2 as illustrated in
Also, in the present embodiment, the thickness d1 of the top wall 21, the height d2 of the side wall 22 and the opening wall 23, the thickness d3 of the opening wall 23 and the side wall 22, the distance α, and the distance β(β=α+d2) can be set in the same manner as in the first embodiment.
According to the present embodiment, by the restriction section 25 having a reversely tapered cross-sectional shape as described above, the lower face 21a of the top wall 21, to which the vapor deposition objects 303 adhere most, can be distanced from the vapor deposition source 30, as indicated by a dotted line in
A description follows regarding a third embodiment, with reference to
Also, in the present embodiment, for the sake of convenience in illustration in
As illustrated in
Neither the height of each step of the opening wall 23 nor the number of steps thereof is limited to any specific value in the present embodiment. In
Also in the present embodiment, the thickness d1 of the top wall 21, the height d2 of the side wall 22 and the opening wall 23, the thickness d3 of the opening wall 23 and the side wall 22, the distance α, and the distance β (β=α+d2) can be set in the same manner as in the first and second embodiments.
Also, in the present embodiment, by the restriction section 25 having a reversely tapered cross-sectional shape like in the second embodiment, the lower face 21a of the top wall 21, to which the vapor deposition objects 303 adhere most, can be distanced from the vapor deposition source 30 in comparison with the first embodiment, as illustrated in
Further, according to the present embodiment, since the opening wall 23 is formed stepwise, in other words, formed in a multi-step rectangular shape, the restriction section 25 can be processed with ease. Furthermore, since the height, width, or the like of each step can be appropriately changed, versatility is further enhanced compared to the second embodiment.
The restriction unit 20 according to a first aspect of the present invention is a restriction unit that is configured to restrict the passage of the vapor deposition particles 301 emitted from the vapor deposition source 30 and includes at least one opening (restriction opening 24) configured to allow the vapor deposition particles 301 to pass through and a plurality of non-openings (restriction sections 25) prepared at both sides of the above opening, wherein the non-opening has a cross-sectional shape of an inverse concave formed of the top wall 21 and the opening walls 23.
Because of this, the non-opening has a cross-sectional shape in which the thickness d1 of the top wall 21 is smaller than the height d2 of the opening wall 23 in the non-opening, no base wall is provided, and the base of the non-opening is open.
As such, according to the above configuration, the height d2 of the opening wall 23 that determines a nozzle length of the restriction opening 24 makes it possible to distance most part of a face of the non-opening opposing the vapor deposition source 30, particularly the lower face 21a of the top wall 21, to which the vapor deposition objects 303 adhere most, from the vapor deposition source 30 while the height d2 maintaining a range defined by design.
Accordingly, the above configuration makes it possible to substantially distance the non-opening from the vapor deposition source 30 without degrading an original function of the restriction unit 20 to control the isotropic vapor deposition flow and enhance the directivity.
As such, with the above configuration, because the radiation heat from the vapor deposition source 30 toward the non-opening can be reduced and the temperature of the adhesion portion of the vapor deposition objects 303 in the non-opening can be lowered, the re-evaporation of the vapor deposition objects 303 adhering to the non-opening can be reduced. As a result, according to the above configuration, abnormal film formation like the tiny film 304 can be prevented because the re-adhesion of the vapor deposition objects 303 to the vapor deposition source 30 caused by the re-evaporation of the vapor deposition objects 303 having adhered to the non-opening can be suppressed or prevented. Accordingly, the vapor deposition film 302 of a high resolution pattern without the adhesion of the tiny film 304 due to the re-evaporation of the vapor deposition objects 303, can be produced (film-formed).
The restriction unit 20 according to a second aspect of the present invention is such that, in the first aspect, the opening wall 23 may be provided in parallel to a normal direction of the top wall 21.
According to the above configuration, an effect described in the first aspect can be obtained with a simple configuration.
The restriction unit 20 according to a third aspect of the present invention is such that, in the first aspect, the opening wall 23 may be provided being slanted relative to the normal direction of the top wall 21, and the non-opening may have a reversely tapered cross-sectional shape smaller in size on the top wall 21 side than on the vapor deposition source 30 side.
The above configuration makes it possible to distance the lower face 21a of the top wall 21, to which the vapor deposition objects 303 adhere most, from the vapor deposition source 30 in comparison with a case in which the opening wall 23 is provided in parallel to the normal direction of the top wall 21. With this, the temperature of the adhesion portion of the vapor deposition objects 303 in the restriction unit 20 can be further decreased in comparison with the case in which the opening wall 23 is provided in parallel to the normal direction of the top wall 21, thereby making it possible to further enhance the effect of reduction in the re-adhesion of the vapor deposition objects 303 to the upper face 30a of the vapor deposition source 30.
The restriction unit 20 according to a fourth aspect of the present invention is such that, in the third aspect, the opening wall 23 may be provided stepwise.
With the above configuration, since the opening wall 23 is formed stepwise, processing thereof (formation of the opening wall 23) is carried out with ease. In addition, since the height, width, or the like of each step can be appropriately changed, the versatility can be further enhanced.
The restriction unit 20 according to a fifth aspect of the present invention is such that, in any one of the first through fourth aspects, a thickness of the opening wall 23 may be equal to a thickness of the top wall 21.
In this case, the processing is carried out with ease so that the restriction unit 20 can be produced with ease.
A vapor deposition device 100 according to a sixth aspect of the present invention includes the restriction unit 20 according to any one of the first through fifth aspects, and the vapor deposition source 30 that is disposed opposing the restriction unit 20 and emits the vapor deposition particles 301.
According to the above configuration, an effect similar to that of the first aspect can be obtained.
The vapor deposition device 100 according to a seventh aspect of the present invention is such that, in the sixth aspect, a distance α from a face (the lower face 23a) of the opening wall 23 opposing the vapor deposition source 30 to the upper face 30a of the vapor deposition source 30, may be not less than 1 mm and not greater than 100 mm.
In the case where the distance α is excessively short, the influence of the radiation heat from the vapor deposition source 30, particularly the influence of the radiation heat from the vapor deposition source 30 toward the lower face 23a of the opening wall 23 and the lower face of the side wall 22 becomes large. In the case where the plurality of openings mentioned above are provided and a plurality of emission openings (vapor deposition source openings 31) through which the vapor deposition particles 301 from the vapor deposition source 30 are emitted are provided corresponding to the respective openings, there is a possibility that the vapor deposition particles 301 emitted from the emission openings other than the emission openings corresponding to the respective openings flow into the respective openings if the distance α is excessively long. However, by making the distance α fall within the above-mentioned range, the influence of the radiation heat from the vapor deposition source 30 can be suppressed, and such a possibility does not arise, in the above-mentioned case, that the vapor deposition particles 301 emitted from the emission openings other than the emission openings corresponding to the respective openings flow into the respective openings.
A production method for a vapor deposition film according to an eighth aspect of the present invention is a method for forming the vapor deposition film 302 of a predetermined pattern on the target film forming substrate 200 using the vapor deposition device 100 according to the sixth or seventh aspect.
According to the above method, an effect similar to that of the first aspect can be obtained.
The production method for the vapor deposition film according to a ninth aspect of the present invention is such that, in the eighth aspect, the plurality of openings are provided in the restriction unit 20 being arranged in a first direction (X-axis direction) in plan view, and vapor deposition may be performed while relatively moving at least one of the target film forming substrate 200 and a set of the restriction unit 20 and the vapor deposition source 30 in a second direction (Y-axis direction) orthogonal to the first direction in plan view.
With the above method, the vapor deposition film 302 can be efficiently film-formed on the target film forming substrate 200 of large size using the restriction unit 20 smaller in size than the target film forming substrate 200.
A production method for an electroluminescence display device according to a tenth aspect of the present invention includes the production method for the vapor deposition film according to the eighth or ninth aspect.
With the above method, an effect similar to that of the eighth or ninth aspect can be obtained.
The production method for the electroluminescence display device according to an eleventh aspect of the present invention is such that, in the tenth aspect, the method includes a first electrode formation process (a preparation process of a TFT substrate and a first electrode (S1)) in which the first electrode 421 is formed on a substrate (TFT substrate 410), an electroluminescence layer formation process (a vapor deposition process of an organic EL layer (S2)) in which an electroluminescence layer (organic EL layer 422) that is formed of an organic or inorganic layer and includes at least the light emitting layer 422b is formed on the first electrode 421, and a second electrode formation process (a vapor deposition process of a second electrode (S3)) in which the second electrode 423 is formed on the electroluminescence layer, and at least the light emitting layer 422b is formed by the production method for the vapor deposition film according to the eighth or ninth aspect.
With the above method, abnormal film formation like the tiny film 304 can be prevented because the re-adhesion of the vapor deposition objects 303 to the vapor deposition source 30 caused by the re-evaporation of the vapor deposition objects 303 having adhered to the non-opening can be suppressed or prevented. Accordingly, the above-discussed production method makes it possible to form the light emitting layer 422b including a high resolution pattern without the adhesion of the tiny film 304 due to the re-evaporation of the vapor deposition objects 303. With this, according to the above-discussed production method, an EL display device, such as the organic EL display device 400, having higher display quality than the existing display device can be provided.
An electroluminescence display device according to a twelfth aspect of the present invention is an electroluminescence display device (organic EL display device 400) in which the first electrode 421, an electroluminescence layer (organic EL layer 422) formed of an organic or inorganic layer, and a second electrode 423 are provided in that order on a substrate (TFT substrate 410), wherein the electroluminescence layer includes the light emitting layer 422b formed of a pattern of the vapor deposition film 302 that is formed by the vapor deposition particles 301 having passed through an opening (restriction opening 24) of the restriction unit 20 including at least one opening configured to allow the vapor deposition particles 301 emitted from the vapor deposition source 30 to pass through and a plurality of non-openings (restriction sections 25) prepared at both sides of the above opening where the non-opening has a cross-sectional shape of an inverse concave formed of the top wall 21 and the opening walls 23.
The above configuration makes it possible to obtain an effect similar to that of the eleventh aspect.
The present invention is not limited to each of the embodiments stated above, and various modifications may be implemented within a range not departing from the scope of the claims. Embodiments obtained by appropriately combining technical approaches stated in each of the different embodiments also fall within the scope of the technology of the present invention. Moreover, novel technical features may be formed by combining the technical approaches stated in each of the embodiments.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2015-206575 | Oct 2015 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2016/080370 | 10/13/2016 | WO | 00 |
