Claims
- 1. A reverse-conducting thyristor having a center, a thyristor section and an antiparallel connected diode section integrated on a common substrate, wherein the thyristor section comprises a field-controlled thyristor (FCT), said reverse-conducting thyristor having opposed cathode and anode sides, said field-controlled thyristor (FCT) comprising a p.sup.+ -doped FCT anode layer on the anode side, an n.sup.- -doped channel layer lying above the anode layer in a direction towards the cathode side, and, on the cathode side, a plurality of alternately arranged n.sup.+ -doped cathode regions and p-doped gate regions, the cathode regions being separated from each other at the cathode side by troughs having side walls and a bottom, said side walls extending from said bottom in the direction towards the cathode side, the gate regions extending across the bottoms of the troughs and defining thereby an interdigitated gate/cathode structure, the cathode regions having top portions on which are provided FCT cathode contacts and the gate regions having portions on which are provided gate contacts in a gate plane;
- said diode section arranged in the center of the reverse-conducting thyristor;
- the FCT anode layer restricted to a region of the field-controlled thyristor (FCT) on the anode side outside said center;
- an n.sup.+ emitter layer diffused into the diode section at the anode side;
- a p.sup.+ -doped diode-anode of the diode section layer arranged at the cathode side, wherein the p.sup.+ -doped anode and the n.sup.- -doped channel form a diode pn-junction, said p.sup.+ -doped diode-anode layer together with the channel layer extending through the diode section and with said n.sup.+ emitter layer forming a diode;
- said p.sup.+ -doped diode-anode layer electrically connected to the FCT cathode contact via an applied diode-anode contact;
- a common anode contact provided at the anode side and extending over the field-controlled thyristor (FCT) and the diode section; and
- a gate separation zone including a separating p-doped gate region contacted by a gate contact provided on the cathode side between the field-controlled thyristor (FCT) and the diode section so that the field-controlled thyristor and diode section are decoupled from each other, said gate separation zone having a width at least equal to the thickness of the field-controlled thyristor.
- 2. A reverse-conducting thyristor as claimed in claim 1, wherein the gate regions also extend over the side walls of the troughs.
- 3. A reverse-conducting thyristor as claimed in claim 2, comprising:
- the side walls of the troughs extending perpendicular to their respective bottoms,
- the troughs having a depth of between 10 .mu.m and 30 .mu.m,
- the cathode regions having a width of between 6 .mu.m and 40 .mu.m,
- the gate contacts applied above the gate regions forming a coherent contact layer,
- the gate regions having a width of between 5 .mu.m and 20 .mu.m, contacting with the cathode regions, and having a maximum doping concentration of 2.times.10.sup.16 cm.sup.-3 at an edge.
- 4. A reverse-conducting thyristor having a central region, an edge region, a thyristor section and an antiparallel connected diode section integrated on a common substrate, wherein the thyristor section comprises a field-controlled thyristor (FCT), said reverse-conducting thyristor having opposed cathode and anode sides, said field-controlled thyristor (FCT) comprising a p.sup.+ -doped FCT anode layer on the anode side, an n.sup.- -doped channel layer lying above the anode layer in a direction towards the cathode side, and, on the cathode side, a plurality of alternately arranged n.sup.+ -doped cathode regions and p-doped gate regions, the cathode regions being separated from each other at the cathode side by troughs having side walls and a bottom, said side walls extending from said bottom in the direction towards the cathode side, the gate regions extending across the bottoms of the troughs and defining thereby an interdigitated gate/cathode structure, the cathode regions having top portions on which are provided FCT cathode contacts and the gate regions having portions on which are provided gate contacts in a gate plane;
- the diode section arranged at the edge portion,
- the FCT anode layer restricted to an area opposite the FCT cathode and the gate regions,
- said diode section comprising an n.sup.+ emitter layer diffused into n.sup.- -channel layer at the anode side and, on the cathode side of the diode section, a p-doped diode-anode layer, the p-doped diode-anode layer electrically connected to the FCT gate contact via an applied diode-anode contact located in a gate plane,
- a gate separation zone including a separating p-doped gate region contacting a gate contact provided on the cathode side between the field-controlled thyristor (FCT) and the diode section so that the field controlled thyristor (FCT) and the diode section are decoupled from each other, said gate separation zone having a width at least equal to the thickness of the field controlled thyristor, and
- a common anode contact provided at the anode side and extending over the field-controlled thyristor and the diode section.
- 5. A reverse-conducting thyristor as claimed in claim 4, wherein the p-doped diode-anode layer is constructed as an alloying contact.
- 6. A reverse-conducting thyristor as claimed in claim 4, wherein the gate regions also extend over the side walls of the troughs.
- 7. A reverse-conducting thyristor as claimed in claim 6, comprising:
- the side walls of the troughs extending perpendicular to their respective bottoms,
- the troughs having a depth of between 10 .mu.m and 30 .mu.m,
- the cathode regions having a width of between 6 .mu.m and 40 .mu.m,
- the gate contacts applied above the gate regions forming a coherent contact layer,
- the gate regions having a width of between 5 .mu.m and 20 .mu.m, contacting with the cathode regions, and having a maximum doping concentration of 2.times.10.sup.16 cm.sup.-3 at an edge.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5095/85 |
Nov 1985 |
CHX |
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Parent Case Info
This application is a continuation of application Ser. No. 930,454, filed on Nov. 14, 1986, now abandoned.
US Referenced Citations (12)
Foreign Referenced Citations (14)
Number |
Date |
Country |
143259 |
Jun 1985 |
EPX |
2824133 |
Dec 1978 |
DEX |
2854174 |
Jun 1979 |
DEX |
3046134 |
Jun 1982 |
DEX |
3612367 |
Oct 1987 |
DEX |
57-79471 |
Jul 1978 |
JPX |
54-143078 |
Nov 1979 |
JPX |
56-103416 |
Aug 1981 |
JPX |
57-62561 |
Apr 1982 |
JPX |
58-40861 |
Mar 1983 |
JPX |
60-189262 |
Sep 1985 |
JPX |
55-085077 |
Jun 1986 |
JPX |
63-198383 |
Aug 1988 |
JPX |
2660257 |
Apr 1981 |
GBX |
Non-Patent Literature Citations (1)
Entry |
P. Debruyne et al., "The Reverse Conducting Thyristor and Its Appl.," Brown, Boveri Rev., vol. 66, #1, Feb. 1979, pp. 5-10. |
Continuations (1)
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Number |
Date |
Country |
Parent |
930454 |
Nov 1986 |
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