with PN junction gate

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H01L29/7392

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7392with PN junction gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device with reduced loss and manufacturing meth...
- Patent number 12,087,848
- Issue date Sep 10, 2024
- TRINNO TECHNOLOGY CO., LTD.
- Kwang Hoon Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide field trench (OFT) diode control device
- Patent number 11,869,959
- Issue date Jan 9, 2024
- STMicroelectronics (Tours) SAS
- Frederic Gautier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable thickness gate oxide transcap
- Patent number 10,580,908
- Issue date Mar 3, 2020
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric assembly including a reverse conducting switching device a...
- Patent number 10,200,028
- Issue date Feb 5, 2019
- Infineon Technologies AG
- Johannes Georg Laven
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Electronic device with adjustable reverse breakdown voltage
- Patent number 10,056,364
- Issue date Aug 21, 2018
- ALLEGRO MICROSYSTEMS, LLC
- Maxim Klebanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated semiconductor switch, particularly circui...
- Patent number 9,893,057
- Issue date Feb 13, 2018
- Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Andreas Huerner
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 9,806,068
- Issue date Oct 31, 2017
- Fuji Electric Co., Ltd.
- Katsunori Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor with vertical PN junction
- Patent number 9,276,135
- Issue date Mar 1, 2016
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit arrangement comprising a field effect transistor...
- Patent number 9,219,063
- Issue date Dec 22, 2015
- Infineon Technologies AG
- Juergen Holz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing the same
- Patent number 9,048,281
- Issue date Jun 2, 2015
- NGK Insulators, Ltd.
- Naohiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field controlled diode with positively biased gate
- Patent number 8,759,171
- Issue date Jun 24, 2014
- Texas Instruments Incorporated
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic switch and circuits utilizing the switch
- Patent number 8,685,812
- Issue date Apr 1, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit arrangement comprising a field effect transistor...
- Patent number 8,629,500
- Issue date Jan 14, 2014
- Infineon Technologies AG
- Juergen Holz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field controlled diode with positively biased gate
- Patent number 8,610,183
- Issue date Dec 17, 2013
- Texas Instruments Incorporated
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic high voltage switching devices
- Patent number 8,610,130
- Issue date Dec 17, 2013
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with non-punch-through semiconductor channels...
- Patent number 8,507,335
- Issue date Aug 13, 2013
- Power Integrations, Inc.
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic switch and circuits utilizing the switch
- Patent number 8,362,528
- Issue date Jan 29, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with non-punch-through semiconductor channels...
- Patent number 7,977,713
- Issue date Jul 12, 2011
- SemiSouth Laboratories, Inc.
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic switch and circuits utilizing the switch
- Patent number 7,635,882
- Issue date Dec 22, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure comprising a highly doped conductive channe...
- Patent number 7,615,802
- Issue date Nov 10, 2009
- SiCED Electronics Development GmbH & Co. KG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,492,034
- Issue date Feb 17, 2009
- Infineon Technologies AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-breakdown-voltage semiconductor device
- Patent number 7,439,563
- Issue date Oct 21, 2008
- Kabushiki Kaisha Toshiba
- Tetsuo Hatakeyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,436,004
- Issue date Oct 14, 2008
- Nissan Motor Co., Ltd.
- Yoshio Shimoida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction-gate type static induction thyristor and high-voltage puls...
- Patent number 7,332,749
- Issue date Feb 19, 2008
- NGK Insulators, Ltd.
- Naohiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral super junction field effect transistor
- Patent number 7,205,629
- Issue date Apr 17, 2007
- WidebandGap LLC
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-breakdown-voltage semiconductor device
- Patent number 7,078,781
- Issue date Jul 18, 2006
- Kabushiki Kaisha Toshiba
- Tetsuo Hatakeyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried-gate-type semiconductor device
- Patent number 7,038,275
- Issue date May 2, 2006
- Toyota Jidosha Kabushiki Kaisha
- Tomoyoshi Kushida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency power amplifier
- Patent number 7,030,698
- Issue date Apr 18, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Seiki Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-breakdown-voltage semiconductor device
- Patent number 7,026,668
- Issue date Apr 11, 2006
- Kabushiki Kaisha Toshiba
- Tetsuo Hatakeyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral channel transistor
- Patent number 7,026,669
- Issue date Apr 11, 2006
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH REDUCED LOSS AND MANUFACTURING METH...
- Publication number 20230317837
- Publication date Oct 5, 2023
- TRinno Technology Co., Ltd.
- Kwang Hoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Device
- Publication number 20220285534
- Publication date Sep 8, 2022
- SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Yi GONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE FIELD TRENCH (OFT) DIODE CONTROL DEVICE
- Publication number 20220069110
- Publication date Mar 3, 2022
- STMicroelectronics (Tours) SAS
- Frederic GAUTIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-CONTROLLED DIODE AND CHIP
- Publication number 20210226046
- Publication date Jul 22, 2021
- Huawei Technologies Co., Ltd
- Wei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Z2-FET STRUCTURE
- Publication number 20190341478
- Publication date Nov 7, 2019
- STMicroelectronics (Crolles 2) SAS
- Hassan El Dirani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE THICKNESS GATE OXIDE TRANSCAP
- Publication number 20190312153
- Publication date Oct 10, 2019
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC ASSEMBLY INCLUDING A REVERSE CONDUCTING SWITCHING DEVICE A...
- Publication number 20170338815
- Publication date Nov 23, 2017
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
MONOLITHICALLY INTEGRATED SEMICONDUCTOR SWITCH, PARTICULARLY CIRCUI...
- Publication number 20170323884
- Publication date Nov 9, 2017
- Fraunhofer-Gesellschaft zur foerderung der Angewandten Forschung e.V.
- ANDREAS HUERNER
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170271314
- Publication date Sep 21, 2017
- Fuji Electric Co., Ltd.
- Katsunori UENO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Arrangement Comprising a Field Effect Transistor...
- Publication number 20140124827
- Publication date May 8, 2014
- INFINEON TECHNOLOGIES AG
- Juergen Holz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Controlled Diode With Positively Biased Gate
- Publication number 20140087530
- Publication date Mar 27, 2014
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID STATE FAULT ISOLATION DEVICES AND METHODS
- Publication number 20140055901
- Publication date Feb 27, 2014
- North Carolina State University
- Woongje Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20130214327
- Publication date Aug 22, 2013
- NGK Insulators, Ltd.
- Naohiro SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Controlled Diode with Positively Biased Gate
- Publication number 20130193491
- Publication date Aug 1, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130161691
- Publication date Jun 27, 2013
- NGK Insulators, Ltd.
- Shoji YOKOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Logic Switch and Circuits Utilizing the Switch
- Publication number 20130143370
- Publication date Jun 6, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH NON-PUNCH-THROUGH SEMICONDUCTOR CHANNELS...
- Publication number 20110217829
- Publication date Sep 8, 2011
- SEMISOUTH LABORATORIES, INC.
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC HIGH VOLTAGE SWITCHING DEVICES AND RELATED METHODS OF FA...
- Publication number 20110101374
- Publication date May 5, 2011
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Logic Switch and Circuits Utilizing the Switch
- Publication number 20100044795
- Publication date Feb 25, 2010
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH NON-PUNCH-THROUGH SEMICONDUCTOR CHANNELS...
- Publication number 20090278177
- Publication date Nov 12, 2009
- SEMISOUTH LABORATORIES, INC.
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Arrangement Comprising a Field Effect Transistor...
- Publication number 20090101975
- Publication date Apr 23, 2009
- INFINEON TECHNOLOGIES AG
- Juergen Holz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND THYRISTOR
- Publication number 20090008650
- Publication date Jan 8, 2009
- KABUSHIKI KAISHA TOSHIBA
- Makoto Mizukami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-effect transistor and thyristor
- Publication number 20060267022
- Publication date Nov 30, 2006
- Kabushiki Kaisha Toshiba
- Makoto Mizukami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure comprising a highly doped conductive channe...
- Publication number 20060255373
- Publication date Nov 16, 2006
- SiCED Electronics Development GmbH & Co. KG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-breakdown-voltage semiconductor device
- Publication number 20060226504
- Publication date Oct 12, 2006
- Tetsuo Hatakeyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060118818
- Publication date Jun 8, 2006
- NISSAN MOTOR CO., LTD.
- Yoshio Shimoida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060081964
- Publication date Apr 20, 2006
- Infineon Technologies AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Logic switch and circuits utilizing the switch
- Publication number 20060033128
- Publication date Feb 16, 2006
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Voltage booster transistor
- Publication number 20050269660
- Publication date Dec 8, 2005
- Ranbir Singh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Lateral channel transistor
- Publication number 20050269661
- Publication date Dec 8, 2005
- Ranbir Singh
- H03 - BASIC ELECTRONIC CIRCUITRY

with PN junction gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power semiconductor device with reduced loss and manufacturing meth...

Oxide field trench (OFT) diode control device

Variable thickness gate oxide transcap

Electric assembly including a reverse conducting switching device a...

Electronic device with adjustable reverse breakdown voltage

Monolithically integrated semiconductor switch, particularly circui...

Semiconductor device

Junction field effect transistor with vertical PN junction

Integrated circuit arrangement comprising a field effect transistor...

Semiconductor device and method for producing the same

Field controlled diode with positively biased gate

Logic switch and circuits utilizing the switch

Integrated circuit arrangement comprising a field effect transistor...

Field controlled diode with positively biased gate

Monolithic high voltage switching devices

Semiconductor devices with non-punch-through semiconductor channels...

Logic switch and circuits utilizing the switch

Semiconductor devices with non-punch-through semiconductor channels...

Logic switch and circuits utilizing the switch

Semiconductor structure comprising a highly doped conductive channe...

Semiconductor device

High-breakdown-voltage semiconductor device

Semiconductor device

Junction-gate type static induction thyristor and high-voltage puls...

Lateral super junction field effect transistor

High-breakdown-voltage semiconductor device

Buried-gate-type semiconductor device

High-frequency power amplifier

High-breakdown-voltage semiconductor device

Lateral channel transistor

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE WITH REDUCED LOSS AND MANUFACTURING METH...

IGBT Device

OXIDE FIELD TRENCH (OFT) DIODE CONTROL DEVICE

GATE-CONTROLLED DIODE AND CHIP

Z2-FET STRUCTURE

VARIABLE THICKNESS GATE OXIDE TRANSCAP

ELECTRIC ASSEMBLY INCLUDING A REVERSE CONDUCTING SWITCHING DEVICE A...

MONOLITHICALLY INTEGRATED SEMICONDUCTOR SWITCH, PARTICULARLY CIRCUI...

SEMICONDUCTOR DEVICE

Integrated Circuit Arrangement Comprising a Field Effect Transistor...

Field Controlled Diode With Positively Biased Gate

SOLID STATE FAULT ISOLATION DEVICES AND METHODS

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

Field Controlled Diode with Positively Biased Gate

SEMICONDUCTOR DEVICE

Logic Switch and Circuits Utilizing the Switch

SEMICONDUCTOR DEVICES WITH NON-PUNCH-THROUGH SEMICONDUCTOR CHANNELS...

MONOLITHIC HIGH VOLTAGE SWITCHING DEVICES AND RELATED METHODS OF FA...

Logic Switch and Circuits Utilizing the Switch

SEMICONDUCTOR DEVICES WITH NON-PUNCH-THROUGH SEMICONDUCTOR CHANNELS...

Integrated Circuit Arrangement Comprising a Field Effect Transistor...

FIELD-EFFECT TRANSISTOR AND THYRISTOR

Field-effect transistor and thyristor

Semiconductor structure comprising a highly doped conductive channe...

High-breakdown-voltage semiconductor device

Semiconductor device

Semiconductor device

Logic switch and circuits utilizing the switch

Voltage booster transistor

Lateral channel transistor