Claims
- 1. A method for forming a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation comprising:providing a laminated hard magnetic underlayer comprising a seed double layer of Ta/Cr, upon which is formed a layer of the hard magnetic material CoPtCr or CoPt; forming over said underlayer an “interrupt” layer said layer being a layer of Ta having an amorphous structure and designed to orient the crystal plane of a layer formed upon it in a direction parallel to the plane of that layer; forming over said “interrupt” layer a conductive lead layer having said properties of high hardness, high melting point high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation said lead layer being a three layer lamination comprising a first layer of NiCr, upon which is formed a conducting layer of Ru, Rh or Ir, upon which is formed a second layer of NiCr, the interfaces between the NiCr and the conducting material causing specular reflection of conduction electrons so as to enhance the sheet conductivity of the formation.
- 2. The method of claim 1 wherein the thickness of the Ta layer is in the range between 30 A and 100 A, the thickness of the Cr layer is between 50 A and 150 A and the layer of CoPtCr or CoPt is formed to a thickness between approximately 150 A and 500 A.
- 3. The method of claim 1 wherein the “interrupt” layer of Ta has a thickness of between 30 A and 75 A.
- 4. The method of claim 1 wherein the first layer of NiCr is formed to a thickness between 30 A and 75 A, the layer of Ru is formed to a thickness of between 250 A and 520 A and the second layer of NiCr is formed to a thickness between 30 A and 50 A.
- 5. A method for forming a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation comprising:providing a laminated hard magnetic underlayer whose layer of hard magnetic material has its close packed crystal plane perpendicular to its layer plane, said underlayer further comprising a seed double layer of Ta/Cr, on which is formed a layer of the hard magnetic material CoPtCr or CoPt; forming over said underlayer a layer of conducting material whose close packed crystal layer is also in a direction parallel to the underlayer and which thereby has high sheet conductivity resulting from the specular reflection of conduction electrons, said conducting material being Rh or Ir; forming over said layer of conductive material a capping layer of Cr.
- 6. The method of claim 5 wherein the thickness of the Ta layer is in the range between 30 A and 75 A, the thickness of the Cr layer is between 50 A and 150 A, and the layer of hard magnetic material CoPtCr or CoPt, is formed to a thickness between approximately 150 A and 500 A.
- 7. The method of claim 5 wherein the layer of Rh is formed to a thickness of between 250 A and 500 A.
- 8. The method of claim 5 wherein the layer of Ir is formed to a thickness of between 250 A and 515 A.
- 9. The method of claim 5 wherein the capping layer of Cr, is formed to a thickness between 20 A and 50 A.
RELATED PATENT APPLICATION
This application is related to Docket No. HT 99-028, Ser. No. 09/483,937, filing date Jan. 18, 2000, assigned to the same assignee as the current invention.
This application is also related to Docket No. HT 00-002, Ser. No. filing date, assigned to the same assignee as the current invention.
US Referenced Citations (7)