the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3268the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface

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Patents Grantslast 30 patents

Information Patent Grant
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the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Spin memory encryption

Storage element and storage apparatus

Reconfigurable PUF device based on fully electric field-controlled...

Magnetic tunnel junction element and magnetoresistive memory device

Electrical offset compensating in a bridge using more than four mag...

Magnetoresistive element having a nano-current-channel structure

Magnetic heterojunction structure and method for controlling and ac...

Insertion layers for perpendicularly magnetized Heusler layers with...

Magnetic sensor

Nano-rod spin orbit coupling based magnetic random access memory wi...

Low-power terahertz magnetic nano-oscillating device

Storage element and storage apparatus

Spin wave switch and filter based on magnonic crystal

Exchange-coupled film and magnetoresistive element and magnetic sen...

Magnetic memory device having a ferromagnetic element

Magnetic sensor

Antiferromagnet based spin orbit torque memory device

Transition metal dichalcogenide based spin orbit torque memory devi...

Tunable multilayer terahertz magnon generator

Magnetic sensing devices based on interlayer exchange-coupled magne...

Tunnel magnetoresistance effect device and magnetic device using same

Storage element and storage apparatus

Magnetic sensor device

Magnetoresistive element having a giant interfacial perpendicular m...

Stacked structure, magnetoresistive effect element, magnetic head,...

Spin-orbit-torque magnetization rotational element and spin-orbit-t...

Magnetic device which improves write error rate while maintaining r...

Magnetoresistance effect element

Spin transfer torque MRAM with a spin torque oscillator stack and m...

Nano-rod spin orbit coupling based magnetic random access memory wi...

Patents Applicationslast 30 patents

MAGNETIC MEMORY DEVICE USING MAGNON SPIN VALVE INCLUDING TOPOLOGICA...

MAGNETORESISTANCE ELEMENT INCLUDING A SKYRMION LAYER AND A VORTEX L...

METHOD FOR SWITCHING MAGNETIC MOMENTS IN MAGNETIC MATERIAL USING SE...

SPIN VALVE DEVICE AND METHOD FOR FORMING A SPIN VALVE DEVICE

METHOD TO CALCULATE PERFORMANCE OF A MAGNETIC ELEMENT COMPRISING A...

SPIN VALVE DEVICE AND METHOD FOR FORMING A SPIN VALVE DEVICE

TRUE RANDOM NUMBER GENERATOR

STORAGE ELEMENT AND STORAGE APPARATUS

FERROMAGNETIC FREE LAYER, LAMINATED STRUCURE COMPRISING THE SAME, M...

SPIN VALVE DEVICE WITH PRECIOUS METAL-FREE ANTIFERROMAGNET IN STABI...

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MAGNETIC SENSOR

MAGNETIC HETEROJUNCTION STRUCTURE AND METHOD FOR CONTROLLING AND AC...

RECONFIGURABLE PUF DEVICE BASED ON FULLY ELECTRIC FIELD-CONTROLLED...

MAGNETORESISTIVE ELEMENT HAVING A NANO-CURRENT-CHANNEL STURCTURE

APPARATUS AND METHOD FOR TERAHERTZ-BASED READING OF DATA RECORDED I...

STORAGE ELEMENT AND STORAGE APPARATUS

ELECTRICAL OFFSET COMPENSATING IN A BRIDGE USING MORE THAN FOUR MAG...

SPIN MEMORY ENCRYPTION

MAGNETORESISTIVE ELEMENT HAVING A GIANT INTERFACIAL PERPENDICULAR M...

NANO-ROD SPIN ORBIT COUPLING BASED MAGNETIC RANDOM ACCESS MEMORY WI...

MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETORESISTIVE MEMORY DEVICE

SPIN WAVE SWITCH AND FILTER BASED ON MAGNONIC CRYSTAL

MAGNETIC SENSOR

MAGNETIC SENSOR DEVICE

EXCHANGE-COUPLED FILM AND MAGNETORESISTIVE ELEMENT AND MAGNETIC SEN...

MAGNETIC SENSING DEVICES BASED ON INTERLAYER EXCHANGE-COUPLED MAGNE...

STACKED STRUCTURE, MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC HEAD,...

MAGNETIC DEVICE

DUAL TUNNEL MAGNETORESISTANCE (TMR) ELEMENT STRUCTURE