Embodiments relate generally to integrated circuit devices. In particular, embodiments relate to processes of applying a solder flux to a substrate.
Processors and other integrated circuit chips can generate significant heat. During miniaturization efforts, not only are circuits being crowded into smaller geometries, but also multiple chips are being crowded into smaller packages. Flip-chip configurations are affected by the miniaturization because mounting space is also shrinking.
In order to depict the manner in which the embodiments are obtained, a more particular description of embodiments briefly described above will be rendered by reference to exemplary embodiments that are illustrated in the appended drawings. Understanding that these drawings depict only typical embodiments that are not necessarily drawn to scale and are not therefore to be considered to be limiting of its scope, the embodiments will be described and explained with additional specificity and detail through the use of the accompanying drawings in which:
The present disclosure relates to spray processing of films such as solder flux films on bond pads.
The following description includes terms, such as upper, lower, first, second, etc. that are used for descriptive purposes only and are not to be construed as limiting. The embodiments of an apparatus or article described herein can be manufactured, used, or shipped in a number of positions and orientations. The terms “die” and “chip” generally refer to the physical object that is the basic workpiece that is transformed by various process operations into the desired integrated circuit device. A die is usually singulated from a wafer, and wafers may be made of semiconducting, non-semiconducting, or combinations of semiconducting and non-semiconducting materials. A board is typically a resin-impregnated fiberglass structure that acts as a mounting substrate for the die. A heat spreader in this disclosure is a thin structure that is dual-die-and-dual-heat spreader processed.
Reference will now be made to the drawings wherein like structures will be provided with like reference designations. In order to show the structures of embodiments most clearly, the drawings included herein are diagrammatic representations of various embodiments. Thus, the actual appearance of the fabricated structures, for example in a photomicrograph, may appear different while still incorporating the structures of embodiments. Moreover, the drawings show only the structures useful to understand the embodiments. Additional structures known in the art have not been included to maintain the clarity of the drawings.
In an embodiment, the coaxial fluid-flow cap 110 and the solder flux liquid inlet tube 112 rotate together, such that the first fitting 114 is not rotatable, but the second fitting is rotatable. In this embodiment, there is one moving coupling.
A fluid flow 106 is also used in
As the solder flux liquid inlet tube 112 rotates and solder flux liquid reaches the mouth 122, the solder flux liquid shears into primary fragments 127, and away from the solder flux liquid inlet tube 112 under the centrifugal force that the rotating motion of the solder flux liquid inlet tube 112 imposes upon it. Simultaneously, the fluid flow 106 perturbs the primary fragments 127 of the solder flux liquid and thereby causes the primary fragments 127 to further fragment into secondary fragments 128.
The coaxial fluid-flow cap 110 includes a nozzle 130 through which the secondary fragments 128 must pass. As the secondary fragments 128 of the solder flux liquid exit the nozzle 130, they experience a pressure change and become tertiary fragments 129.
Control of the size of the various fragments 127, 128, and 129 can be done by various methods in
The viscosity of the solder flux liquid within the solder flux liquid inlet tube 112 will also act in concert with the rate of flow and the rate of rotation to affect the size of the primary fragments 127.
The quality of the fluid in the fluid flow 106 will also affect the fragmentation of the primary fragments 127. In an embodiment, the fluid in the fluid flow 106 is itself a liquid in an atomized state. In an embodiment, the fluid in the fluid flow 106 is a vapor that behaves like a saturated gas. In an embodiment, the fluid in the fluid flow 106 is a gas. The fluid flow 106 can be referred to as an “air assist,” but this term is intended to be an abbreviation of the various fluid flows 106 that have been described. Additionally, when the fluid flow 106 is a gas, it can be a gas that is unreactive to the system of the solder flux liquid.
The exact spacing 132 between the mouth 122 of the solder flux liquid inlet tube 112 and the nozzle 130 is also a factor that affects the size of the secondary fragments 128. The fluid flow 106 has a principal effect upon the primary fragments 127 in this spacing 132. In an embodiment for dimensional analysis, the mouth 122 has a diameter of unit y, and the opening of the nozzle 130 has a diameter in a range from about y to about 10 times y. In an embodiment, the mouth 122 has the diameter of y, and the spacing 132 between the mouth 122 and the nozzle 130 is in a range from about 0.1 times y, to about five times y. In an embodiment, the spacing 132 between the mouth 122 and the nozzle 130 is about 2 mm.
In an embodiment, the mouth 122 has a diameter of y, the opening of the nozzle 130 has a diameter of about five times y, and the spacing 132 between the mouth 122 and the nozzle 130 is about three times y.
In an embodiment, the angle 134 that is placed at the mouth 122 of the solder flux liquid inlet tube 112 creates a backpressure within the solder flux liquid, which acts in antagonism to the shear force that is being directed at the primary fragments 127. Rotational directions are depicted at items 124 and 126. The angle 134 therefore affects the formation of the primary fragments 127. In an embodiment, the angle 134 is in a range from about 1° to about 90° deviation from the vertical. In an embodiment, the angle 134 is about 30° deviation from the vertical. In an embodiment, no angle is formed at the mouth 122 of the solder flux liquid inlet tube 112.
The tertiary fragments 129 are depicted as six streams that are being driven away from the nozzle 130 and toward a substrate 136 that includes a bond pad 138. The tertiary fragments 129 of the solder flux liquid impinge on the bond pad 138 by X-Y placement control of the solder coaxial fluid-flow cap 110. Two keep-out zones (KOZs) 140 and 142 represent locations on the substrate 136 that are not to be significantly contacted with the tertiary fragments 129 of the solder flux liquid.
As the tertiary fragments 129 of the solder flux liquid impinge on the bond pad 138, there is inherent splashing that depends upon the size of the tertiary fragments 129, the velocity, the wetting affinity for the bond pad 138, and the viscosity of the tertiary fragments 129, among others.
In an embodiment, the coaxial fluid-flow cap 210 and the solder flux liquid inlet tube 212 rotate together, such that the first fitting 214 is not rotatable, but the second fitting 218 is rotatable. In this embodiment, there is one moving coupling.
A fluid flow 206 is also used in
As the solder flux liquid inlet tube 212 rotates and solder flux liquid reaches the mouth 222, the solder flux liquid shears into primary fragments 227, and away from the solder flux liquid inlet tube 212 under the centrifugal force that the rotating motion of the solder flux liquid inlet tube 212 imposes upon it. Simultaneously, the fluid flow 206 as an “air assist,” perturbs the primary fragments 227 of the solder flux liquid and thereby causes the primary fragments 227 to further fragment into secondary fragments 228.
In an embodiment, the coaxial fluid-flow cap 210 includes a nozzle similar to the nozzle 130 depicted in
The exact spacing 232 between the mouth 222 of the solder flux liquid inlet tube 212 and the nozzle 230 is also a factor that affects the size of the secondary fragments 228. The tertiary fragments 229 are depicted as six streams that are being driven away from the nozzle 230 and toward a substrate 236 that includes a bond pad 238. The tertiary fragments 229 of the solder flux liquid impinge on the bond pad 238 by X-Y placement control of the solder coaxial fluid-flow cap 210. Two keep-out zones (KOZs) 240 and 242 represent locations on the substrate 236 that are not to be significantly contacted with the tertiary fragments 229 of the solder flux liquid. Rotational directions are depicted at items 224 and 226.
As the tertiary fragments 229 of the solder flux liquid impinge on the bond pad 238, there is inherent splashing that depends upon the size of the tertiary fragments 229, the velocity, the wetting affinity for the bond pad 238, and the viscosity of the tertiary fragments 229, among others.
In
In an embodiment, the coaxial fluid-flow cap 410 and the solder flux liquid inlet tube 412 rotate together, such that the first fitting 414 is not rotatable but the second fitting 418 is rotatable. In this embodiment, there is one moving coupling.
A fluid flow 406 is also used in
Where the process is conducted in a gravity environment and assuming the orientation of the 400 is a illustrated in
In an embodiment, the coaxial fluid-flow cap 410 includes a nozzle similar to the nozzle 130 depicted in
The exact spacing 432 between the mouth 422 of the solder flux liquid inlet tube 412 and the nozzle 430 is also a factor that affects the size of the secondary fragments 428. The tertiary fragments 429 are depicted as six streams that are being driven away from the nozzle 430, and toward a substrate 436 that includes a bond pad 438. The tertiary fragments 429 of the solder flux liquid impinge on the bond pad 438 by X-Y placement control of the solder coaxial fluid-flow cap 410. Two KOZs 440 and 442 represent locations on the substrate 436 that are not to be significantly contacted with the tertiary fragments 429 of the solder flux liquid.
A solder flux composition 616 is depicted as having been deposited upon the mounting substrate 612. The solder flux composition 616 has wetted a bond pad 618 that is disposed on the upper surface 620 of the mounting substrate 612. Depositing of the solder flux composition 616 is done by X-Y grid spraying according to an embodiment.
At 710, the process includes contacting a solder flux composition to a mounting substrate under conditions of a first shear force upon the solder flux liquid and a second perturbation force by an air-assist liquid. In an embodiment, the process commences and terminates at 710.
At 720, the process includes heating the solder flux composition to the reflow temperature of the solder bump. In an embodiment, the method commences at 710 and terminates at 720. In an embodiment, the process commences and terminates at 720.
At 730, the process includes washing the package to remove residual solder flux. In an embodiment, the method commences at 710 and terminates at 730.
At 740, the package is installed into a computing system.
Various solder fluxes can be used in the process embodiments. In various embodiments, the solder flux composition may be used as part of a soldering process for forming various integrated circuit devices. For the embodiments, a solder flux composition embodiment may remove oxide from a surface onto which soldering is to occur, thereby increasing the ability of the solder to adhere to the surface of the substrate. In some embodiments, the solder flux composition embodiment may prevent oxide growth on a surface to be soldered as well as decreasing air and/or contaminants at the surface of the substrate.
In an embodiment, a solder flux composition includes tartaric acid. A group of solder flux compositions include the tartaric acid, a resin, an amine, a solvent, and the solution, reaction, and mixture products thereof. The tartaric acid-containing solder flux composition can be obtained from Senju America, Inc. of Great Neck, N.Y. One selected solder flux composition from Senju is Senju 42™.
Where a surfactant is used, sometimes referred to as a flow modifier, the specific surfactant that is employed depends upon compatibility with the solder flux composition. In an embodiment, the surfactant is anionic such as long chain alkyl carboxylic acids, such as lauric acids, steric acids, and the like. In an embodiment, the surfactant is nonionic. Examples of nonionic surfactants are polyethylene oxides, poly propylene oxides, and the like. In an embodiment, the surfactant is cationic, such as alkyl ammonium salts, such as tert butyl ammonium chlorides, or hydroxides. In an embodiment, the flow modifier is provided in a range from about 0.1% to about 10% by weight of the total solder flux composition when it is prepared.
In some embodiments, an amine is used. In an embodiment, the amine is an alkyl substituted amine. In an embodiment, the amine is an ethanol amine. In an embodiment, the amine is an ethoxylated amine. In an embodiment, the amine is a propoxylated amine.
In an embodiment, a liquid primary aromatic diamine is used. One example liquid primary aromatic diamine is diethyldiaminotoluene (DETDA), which is marketed as ETHACURE® 100 from Ethyl Corporation of Richmond, Va. Another example liquid primary aromatic diamine is a dithiomethyldiaminotoluene such as Ethacure® 300. Another example liquid primary aromatic diamine is an alkylated methylenedianiline such as Lapox® K-450 manufactured by Royce International of Jericho, N.Y.
In an embodiment, a liquid hindered primary aliphatic amine is used. One example liquid hindered primary aliphatic amine is an isophorone diamine. Another example liquid hindered primary aliphatic amine is an alkylated methylenedianiline such as Ancamine® 2049 manufactured by Pacific Anchor Chemical Corporation of Allentown, Pa.
In an embodiment, a liquid secondary aromatic amine is used. One example liquid secondary aromatic amine embodiment is an N,N′-dialkylphenylene diamine such as Unilink® 4100 manufactured by DorfKetal of Stafford, Tex. Another example liquid secondary aromatic amine embodiment is an N,N′-dialkylmethylenedianilines: i.e. Unilink® 4200.
In various embodiments, a solder flux composition may comprise less than 40 weight % of the amine.
In an embodiment, a resin is used to provide tackiness of the solder flux composition to the bond pad and the solder bump up to and including the time of reflow. The solder flux composition may include the resin, which may be present in an amount from about 1% to about 20% by weight based on the organic components present.
In an embodiment, a cycloaliphatic epoxy resin is used. In an embodiment, a bisphenol A type epoxy resin is used. In an embodiment, a bisphenol-F type epoxy resin is used. In an embodiment, a novolac epoxy resin is used. In an embodiment, a biphenyl type epoxy resin is used. In an embodiment, a naphthalene type epoxy resin is used. In an embodiment, a dicyclopentadiene-phenol type epoxy resin is used. In an embodiment, a combination of any two of the resins is used. In an embodiment, a combination of any three of the resins is used. In an embodiment, a combination of any four of the resins is used.
This Detailed Description refers to the accompanying drawings that show, by way of illustration, specific aspects and embodiments in which the present disclosure may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the disclosed embodiments. Other embodiments may be used and structural, logical, and electrical changes may be made without departing from the scope of the present disclosure. The various embodiments are not necessarily mutually exclusive, as some embodiments can be combined with one or more other embodiments to form new embodiments.
The term “horizontal” as used in this document is defined as a plane parallel to the conventional plane or surface of a wafer or substrate, regardless of the orientation of the wafer or substrate. The term “vertical” refers to a direction perpendicular to the horizontal as defined above. Prepositions, such as “on”, “side” (as in “sidewall”), “higher”, “lower”, “over”, and “under” are defined with respect to the conventional plane or surface being on the top surface of the wafer or substrate, regardless of the orientation of the wafer or substrate. The Detailed Description is, therefore, not to be taken in a limiting sense, and the scope of this disclosure is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.
The Abstract is provided to comply with 37 C.F.R. §1.72(b) requiring an abstract that will allow the reader to quickly ascertain the nature and gist of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
In the foregoing Detailed Description, various features are grouped together in a single embodiment for the purpose of streamlining the disclosure. This method of disclosure is not to be interpreted as reflecting an intention that the claimed embodiments of the invention require more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive subject matter lies in less than all features of a single disclosed embodiment. Thus the following claims are hereby incorporated into the Detailed Description, with each claim standing on its own as a separate embodiment.
It will be readily understood to those skilled in the art that various other changes in the details, material, and arrangements of the parts and method stages that have been described and illustrated to explain the nature of this invention may be made without departing from the principles and scope of the invention as expressed in the subjoined claims.
This application is a divisional of U.S. patent application Ser. No. 11/613,490 filed Dec. 20, 2006, issued as U.S. Pat. No. 8,215,536 on Jul. 10, 2012, which is hereby incorporated by reference in its entirety.
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Office Action 1 for U.S. Appl. No. 11/613,490, dated May 1, 2009, 11 pp. [77.261 (OA1)]. |
Response to Office Action 1 for U.S. Appl. No. 11/613,490, dated Jul. 2, 2009, 8 pp. [77.261 (ROA1)]. |
Office Action 2 for U.S. Appl. No. 11/613,490, dated Nov. 12, 2009, 11 pp. [77.261 (OA2)]. |
Response to Office Action 2 for U.S. Appl. No. 11/613,490, dated Dec. 29, 2009, 8 pp. [77.261 (ROA2)]. |
Office Action 3 for U.S. Appl. No. 11/613,490, dated Apr. 1, 2010, 15 pp. [77.261 (OA3)]. |
Response to Office Action 3 for U.S. Appl. No. 11/613,490, dated Jul. 1, 2010, 9 pp. [77.261 (ROA3)]. |
Final Office Action 1 for U.S. Appl. No. 11/613,490, dated Sep. 14, 2010, 15 pp. [77.261 (FOA1)]. |
Response to Final Office Action 1 for U.S. Appl. No. 11/613,490, dated Nov. 15, 2010, 10 pp. [77.261 (RFOA1)]. |
Advisory Action 1 for U.S. Appl. No. 11/613,490, dated Dec. 3, 2010, 5 pp. [77.261 (AdvAct)]. |
Pre-Appeal Brief Request for Review 1 for U.S. Appl. No. 11/613,490, dated Jan. 14, 2011, 9 pp. [77.261D1 (PreApplConfReq1)]. |
Decision on Pre-Appeal Brief Request for Review 1 for U.S. Appl. No. 11/613,490, dated Feb. 8, 2011, 2 pp. [77.261D1 (DecPreApplConfReq1)]. |
Office Action 5 for U.S. Appl. No. 11/613,490, dated Mar. 17, 2011, 19 pp. [77.261 (OA5)]. |
Response to Office Action 5 for U.S. Appl. No. 11/613,490, dated Aug. 17, 2011, 9 pp. [77.261 (ROA5)]. |
Final Office Action 2 for U.S. Appl. No. 11/613,490, dated Oct. 14, 2011, 21 pp. [77.261 (FOA2)]. |
Pre-Appeal Brief Request for Review 2 for U.S. Appl. No. 11/613,490, dated Jan. 17, 2012, 10 pp. [77.261D1 (PreApplConfReq2)]. |
Decision on Pre-Appeal Brief Request for Review 2 for U.S. Appl. No. 11/613,490, dated Feb. 22, 2012, 2 pp. [77.261D1 (DecPreApplConfReq2)]. |
Notice of Allowance for U.S. Appl. No. 11/613,490, dated Mar. 6, 2012, 7 pp. [77.261D1 (NOA1)]. |
Number | Date | Country | |
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20120266972 A1 | Oct 2012 | US |
Number | Date | Country | |
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Parent | 11613490 | Dec 2006 | US |
Child | 13540552 | US |