Claims
- 1. A semiconductor device comprising: a substrate formed of a sapphire monocrystal, the substrate having a major face and a side face, the side face being a cleavage plane parallel to a plane R of the sapphire monocrystal; and a semiconductor element formed on the major face of the sapphire substrate: and a microcrack line on the major face parallel to the plane R for starting to cleave the substrate.
- 2. The device of claim 1, wherein the semiconductor element is a laser diode having a laser light-emitting semiconductor multilayer formed on the major face of the substrate, wherein the side cleavage plane of the sapphire substrate is connected with a side cleavage plane of the multilayer.
- 3. The device of claim 1, wherein the major face is a plane A of the sapphire mono-crystal and has a surface roughness (Ra) of 0.1 μm or less.
Priority Claims (2)
Number |
Date |
Country |
Kind |
8-43862 |
Feb 1996 |
JP |
|
8-43863 |
Feb 1996 |
JP |
|
Parent Case Info
This application is a divisional of Ser. No. 08/808,315 filed Feb. 28, 1997.
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