Claims
- 1. A scintillation crystal for a radiation detector, comprising:
- (a) a first layer of a crystal material which has a high energy resolution; and
- (b) a second layer of a different crystal material, said second layer being located on top of said first layer and being thin with respect thereto, the second layer protecting the first layer against breakage and making a negligable contribution to the scintillation properties of the first layer.
- 2. A scintillation crystal according to claim 1, wherein said first layer is made of thallium-activated sodium iodide (NaI[Tl]).
- 3. A scintillation crystal according to claim 1, wherein said second layer is made of a crystal material selected from the group consisting of cesium iodide (CsI), sodium-activated cesium iodide (CsI[Na]) and thallium-activated cesium iodide (CsI[Tl]).
- 4. A scintillation crystal according to claim 1, wherein the first layer has a thickness in the range of 1/4 inch to 1 inch.
- 5. A scintillation crystal according to claim 1, wherein the second layer has a thickness in the range of 0.1 mm to 1 mm.
- 6. The scintillation crystal of claim 1, further comprising a third layer of a crystal material, said first layer being sandwiched between said second and third layers.
- 7. A scintillation crystal according to claim 6, wherein said third layer is made of a crystal material selected from the group consisting of cesium iodide (CsI), sodium-activated cesium iodide (CsI[Na]) and thallium-activated cesium iodide (CsI[Tl]).
- 8. A scintillation crystal according to claim 6, wherein said first layer is made of thallium-activated sodium iodide (NaI[Tl]) and said second and third layers are made of a crystal material selected from the group consisting of cesium iodide (CsI), sodium-activated cesium iodide (CsI[Na]) and thallium-activated cesium iodide (CsI[Te]).
- 9. A scintillation crystal according to claim 6, wherein the third layer has a thickness in the range of 0.1 mm to 1 mm.
- 10. A method for making a scintillation crystal, comprising the following steps:
- (a) placing a substrate having a surface in an evaporation container;
- (b) evaporating within said container a first crystal material such that it deposits upon said surface to form a second crystal layer; and
- (c) evaporating within said container a second crystal material such that it deposits upon the second crystal layer as a first crystal layer to form a two-layer crystal sandwich, the second crystal material having a high energy resolution.
- 11. A method according to claim 10, further comprising the step of sealing the two-layer crystal sandwich with a metal cover.
- 12. A method according to claim 10, wherein said first crystal material is selected from the group consisting of cesium iodide (CsI), sodium-activated cesium iodide (CsI[Na]) and thallium-activated cesium iodide (CsI[Tl]).
- 13. A method according to claim 10, wherein said second crystal material is thallium-activated sodium iodide (NaI[Tl]).
- 14. A method according to claim 10, further comprising the step of annealing the two-layer crystal sandwich.
- 15. The method of claim 10, further comprising the step of evaporating within said container a third crystal material such that it deposits upon the first crystal layer as a third crystal layer to form a three-layer crystal sandwich.
- 16. A method according to claim 15, further comprising the step of sealing the three-layer crystal sandwich with a metal cover.
- 17. A method according to claim 15, wherein said third crystal material is selected from the group consisting of cesium iodide (CsI), sodium-activated cesium iodide (CsI[Na]) and thallium-activated cesium iodide (CsI[Tl]).
- 18. A method according to claim 15, wherein said second crystal material is thallium-activated sodium iodide (NaI[Tl]) and wherein the first and third crystal material are selected from the group consisting of cesium iodide (CsI), sodium-activated cesium iodide (CsI[Na]) and thallium-activated cesium iodide (CsI[Tl]).
- 19. A method according to claim 18, further comprising the steps of sealing the three-layer crystal sandwich with an aluminum cover.
- 20. A method according to claim 15, further comprising the step of annealing the three-layer crystal sandwich.
- 21. A radiation detector, comprising a scintillation crystal which comprises:
- (a) a first layer of a crystal material having a high energy resolution; and
- (b) a second layer of a crystal material, said second layer being located on top of said first layer and being thin with respect thereto, the second layer protecting the first layer against breakage and making a negligable contribution to the scintillation properties of the first layer.
- 22. The radiation detector of claim 21, further comprising a gamma-radiation scintillation camera head containing said scintillation crystal.
- 23. A scintillation crystal, comprising:
- a first layer of thallium-activated sodium iodide (NaI[Tl]); and
- a second layer selected from the group consisting of
- cesium iodide (CsI),
- sodium-activated cesium iodide (CsI[Na]) and
- thallium-activated cesium iodide (CsI[Tl]),
- said second layer being thin with respect to said first layer and protecting it against breakage and making a negligible contribution to its scintillation properties.
- 24. The scintillation crystal of claim 23, further comprising a third layer selected from the group consisting of
- cesium iodide (CsI),
- sodium-activated cesium iodide (CsI[Na]) and
- thallium-activated cesium iodide (CsI[Tl]),
- said first layer being sandwiched between said second and third layers.
Parent Case Info
This is a continuation of application Ser. No. 549,865, filed Nov. 9, 1983, now abandoned.
US Referenced Citations (7)
Foreign Referenced Citations (2)
Number |
Date |
Country |
991906 |
Dec 1965 |
GBX |
1003220 |
Dec 1965 |
GBX |
Non-Patent Literature Citations (1)
Entry |
Health Physics, vol. 34, No. 5, May 1978, Pergamon Press Oxford, A. J. Ahlquist, "Recent Developments for Field Monitoring of Alpha-Emitting Contaminants in the Environment", pp. 486 to 489. |
Continuations (1)
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Number |
Date |
Country |
Parent |
549865 |
Nov 1983 |
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