Claims
- 1. A nucleant seed for epitaxial growth of a single-crystal CaF2 comprising SrF2.
- 2. A nucleant seed for epitaxial growth of a single crystal CaF2 comprising a fluoride substituted in the SrF2 structure, the fluoride selected from the group consisting of YF3, LaF3, rare-earth fluoride, and combinations thereof.
- 3. The nucleant seed of claim 2, wherein the rare-earth fluoride comprises one selected from the group consisting of CeF3, NdF3, PrF3, DyF3, SmF3, EuF3, TbF3, and GdF3.
- 4. The nucleant seed of claim 3, wherein the fluoride substitutions in the SrF2 structure is in a range from 10 to 30 mole %.
- 5. A process for producing a single-crystal CaF2 from a melt, comprising:contacting the melt with a seed comprising SrF2; and moving the melt at a rate in the range of 0.3 to 5 mm/h through a thermally-graded zone so that the single-crystal CaF2 is grown on the seed.
- 6. The process of claim 5, wherein the seed further comprises a fluoride substituted in the SrF2 structure, the fluoride selected from the group consisting of YF3, LaF3, rare-earth fluoride, and combinations thereof.
- 7. The process of claim 6, wherein the rare-earth fluoride comprises one selected from the group consisting of YF3, LaF3, CaF3, NdF3, PrF3, DyF3, SmF3, EuF3, TbF3, and GdF3.
- 8. The process of claim 7, wherein the rare-earth substitutions the SrF2 is in a range from 10 to 30 mole %.
- 9. A process for producing a single-crystal CaF1 from a melt, comprising:contacting the melt with a seed having a composition SrF2-X, where X is selected from the group consisting of YF3, LaF3, rare-earth fluoride, and combinations thereof; and moving the melt at a rate in the range of 0.3 to 5 mm/h through a thermally-graded zone so that the CaF2 crystal is grown on the seed.
- 10. The process of claim 9, wherein the rare-earth fluoride comprises one selected from the group consisting of YF3, LaF3, CeF3, NdF3, PrF3, DyF3, SmF3, EuF3, TbF3, and GdF3.
- 11. The process of claim 10, wherein the rare-earth substitution in the SrF2 is in a range from 10 to 30 mole %.
Parent Case Info
This application is a continuation of U.S. patent application Ser. No. 09/818,160, filed Mar. 27, 2001, now U.S. Pat. No. 6,451,111 and claims the priority of said application.
US Referenced Citations (6)
Foreign Referenced Citations (2)
Number |
Date |
Country |
WO0075405 |
Dec 2000 |
WO |
WO0075697 |
Dec 2000 |
WO |
Non-Patent Literature Citations (1)
Entry |
Chernevskaya, et al, “Optical Characteristics of Large Single Crystals of Fluorides” Optical Technology, vol. 40, No. 6, Jun. 1973. |
Continuations (1)
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Number |
Date |
Country |
Parent |
09/818160 |
Mar 2001 |
US |
Child |
10/244897 |
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US |