1. Field of the Invention
The exemplary embodiment(s) of the present invention relates to an optical sensor. More specifically, the exemplary embodiment(s) of the present invention relates to a selectable view angle (SVA) optical sensor.
2. Description of Related Art
In recent years, the optical sensing technology has major progress with the development of the manufacturing technology, and many power saving applications for better displays continuously pushing optical sensing technology to offer multiple features in a small form factor. Also, the optical proximity sensor (OPS) apparatus is one of the applications, which is commonly used in wireless communications, bio-molecular sciences, environmental monitoring, and displays. The UPS apparatus is developed based on the light signal received by the photodiode via the reflections of the measured object. The photodiode transfers the received light signal to an electrical signal. By detecting the intensity of the electrical signal, the UPS apparatus can obtain the gesture motion of the measured object.
To more precisely determine the direction of movement of the measured object, the UPS apparatus needs optical sensors having high directivity. That is, such optical sensors should only receive light from a predetermined area or angle. One of the methods to make the optical sensors have the selectable view angle function is to add extra lens or having multiple light emission diodes in the OPS apparatus. Thus, the production cost may increase and the reliability may decrease due to the extra structures. Besides, it is difficult for the OPS apparatus to be miniaturized or packaged so that it is difficult for the OPS apparatus to be applied in mobile devices.
Thus, for the demand, using a low-cost and simple method to manufacture an optical sensor with selectable view angle function has become a concern for the application in the market.
A selectable view angle optical sensor is disclosed. The selectable view angle optical sensor comprises a substrate, a photodiode array disposed on the substrate, a first optical shielding modulation layer disposed on a first plane and a second optical shielding modulation layer disposed on a second plane. The first plane is on the photodiode array, the second plane is on the first plane, and the first and second planes and a top surface of the photodiode array are substantially in parallel. The dimensions and configurations of the first and second optical shielding modulation layers limit a field of view of the photodiode array so that the photodiode array has selectable view angle function. In addition, because of the layer structure of the first and second optical shielding modulation layers, the manufacturing process of the disclosed selectable view angle optical sensor can be fully compatible with complementary metal-oxide-semiconductor (CMOS) and BiCMOS process.
Preferably, the first optical shielding modulation layer may comprise a plurality of first optical shielding strips configured in parallel, the second shielding modulation layer may comprise a plurality of second optical shielding strips configured in parallel, and the plurality of first optical shielding strips and the plurality of second optical shielding strips may be substantially parallel to each other.
Preferably, the plurality of first optical shielding strips may be spaced apart from each other at a first distance, and the plurality of second optical shielding strips may be spaced apart from each other at a second distance.
Preferably, the photodiode array may have two different viewing angles of the field of view in a cross-section view.
Preferably, the photodiode array may further comprise a plurality of sub-photodiodes.
Preferably, the first or second optical shielding modulation layers may be made of metal.
Preferably, the first or second optical shielding modulation layers may be interference filters.
Preferably, the selectable view angle optical sensor may further comprise a dielectric layer disposed between the first and the second optical shielding modulation layers.
Another selectable view angle optical sensor is disclosed. The selectable view angle optical sensor comprises a substrate, a photodiode array disposed on the substrate, a first optical shielding modulation layer disposed on a first plane, a second optical shielding modulation layer disposed on a second plane and an optical filter layer disposed on the second optical shielding modulation layer to allow light with a predetermined wavelength passing through the selectable view angle optical sensor. The first plane is on the photodiode array, the second plane is on the first plane, and the first and second planes and a top surface of the photodiode array are substantially in parallel. The dimensions and configurations of the first and second optical shielding modulation layers limit a field of view of the photodiode array so that the photodiode array has selectable view angle function. In addition to the advantages provided by the former selectable view angle optical sensor, this selectable view angle optical sensor in fact can offer better selectivity on wavelength of a light source and the view angle for this selectable view angle optical sensor itself by applying the optical filter layer.
With the object, advantages, and features of the invention that may become hereinafter apparent, the nature of the invention may be more clearly understood by reference to the detailed description of the invention, the embodiments and to the several drawings herein.
The exemplary embodiment(s) of the present invention will be understood more fully from the detailed description given below and from the accompanying drawings of various embodiments of the invention, which, however, should not be taken to limit the invention to the specific embodiments, but are for explanation and understanding only.
Exemplary embodiments of the present invention are described herein in the context of a selectable view angle (SVA) optical sensor.
Those of ordinary skilled in the art will realize that the following detailed description of the exemplary embodiment(s) is illustrative only and is not intended to be in any way limiting. Other embodiments will readily suggest themselves to such skilled persons having the benefit of this disclosure. Reference will now be made in detail to implementations of the exemplary embodiment(s) as throughout the drawings and the following detailed description to refer to the same or like parts.
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Generally, SVA structures including the first and second optical shielding modulation layers 300 and 400 can block part of incoming light, thereby making the photodiode array 200 to receive light only from a predetermined area or at a predetermined angle. The predetermined area or the predetermined angle can be decided by the dimensions and configurations of the SVA structures, such as shape, size, or relative positions of the SVA structures. In addition, because of the layer structure of the first and second optical shielding modulation layers, the manufacturing process of the disclosed selectable view angle optical sensor can be fully compatible with complementary metal-oxide-semiconductor (CMOS) or BiCMOS process. Therefore, the SVA structures can be formed with the other structure of the SVA optical sensor concurrently without applying customized process for the SVA structure, so as to manufacture the SVA optical sensor without using special design equipment. It is worthy to mention that the photodiode array 200 may include one or more photodiodes and the type of the photodiodes can be determined by the type of the substrate. For example, in one embodiment, the substrate 100 is a P-type substrate, and the photodiode array 200 includes N+ photodiodes. In one embodiment, the substrate 100 may further comprise an epitaxial layer to improve the quality of the photodiode array 200. The photodiode array 200 may have a layer structure and be compatible with CMOS or BiCMOS process as well.
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In this embodiment, the SVA structures including the first and second optical shielding modulation layers 300 and 400 can limit incoming light by the strip structures of the first and second optical shielding modulation layers 300 and 400. For example, please refer to point A of the photodiode array 200 in
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To simplify the structures, the first distances S1 between the plurality of first optical shielding strips 301 may be the same, and the second distance S2 between the plurality of second optical shielding strips 401 may be the same. In this embodiment, the view angle response for the SVA optical sensor may be symmetric in a cross-section view, but the present invention is not limited thereto. In addition, a first width W1 of the first optical shielding strips 301 can be the same, and the second width W2 of the second optical shielding strips 401 can be the same. The plurality of first optical shielding strips 301 and the plurality of second optical shielding strips 401 can be disposed in an alternative way, so that the light coming from right above cannot reach the photodiode array 200 and the response at view angle 0 degree is weak for the SVA optical sensor.
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Generally, as mentioned before, the field of view of the photodiode array 200 can be defined by the relative positions of the SVA structures including the first and second optical shielding modulation layers 300 and 400. In
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In general, a SSVA optical sensor can be achieved by changing the dimensions of the first and second optical shielding modulation layers 300 and 400. Moreover, the field of view of the SVA optical sensor can be adjusted by changing the dimension of one of the first and second optical shielding modulation layers 300 and 400 only. In this embodiment, the field of view of the SVA optical sensor can be adjusted by changing the dimension of the second optical shielding modulation 400, and thus the SVA optical sensors with different field of view can be manufactured in the same process before the formation of the second optical shielding modulation 400.
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In general, the photodiode array 200 may further comprises a plurality of sub-photodiodes 201, and each sub-photodiode 201 may receive light and send electric signal individually. Hence, the electric signals from the different sub-photodiodes can be used to detect and determine the target object in motion together, and the precision of determination may be increased. Although the SVA structures of this embodiment are similar to that of the first embodiment, in other embodiments, the SVA structures can be designed for each sub-photodiode 201 to increase the directivity. For example, the first and second distances S1 and S2 may become different between the first and second optical shielding strips 301 and 401 to make the field of view of each sub-photodiode concentrate on the same direction.
Preferably, the first or second optical shielding modulation layers 300 and 400 may be made of metal.
In general, one of the materials used to block light is metal. Therefore, the first or second optical shielding modulation layers 300 and 400 may be made of metal such as Al or Cu, and may be readily formed by metal deposition process with common metal deposition equipment.
Preferably, the first or second optical shielding modulation layers 300 and 400 may be interference filters.
The first or second optical shielding modulation layers 300 and 400 may be interference filters, for example, Fabry-Perot interference filters. Since the transmission spectrum of Fabry-Perot interference filter can exhibit high transmission if the incoming light satisfies the resonance condition, the first or second optical shielding modulation layers 300 and 400 may use Fabry-Perot interference filter structure to increase the selectability for the wavelength of light. In other words, the optical method to detect an object in motion is to emit light onto the object and then receive and analyze the light reflected by the body, and the light is emitted from a predetermined light source like a light emitting diode (LED) or a vertical-cavity surface-emitting laser (VCSEL) and the wavelength of the light is predetermined as well. Hence, if the first or second optical shielding modulation layers 300 and 400 have high transmission for the light from the predetermined light source and low transmission for other ambient light, the interference of the desired optical signal due to noise such as background stray light can be effectively blocked, and the sensing signal to noise ratio can be increased. The structure of interference filter can be formed by deposition process, for example, physical vapor deposition (PVD).
Preferably, the selectable view angle optical sensor may further comprise a dielectric layer 500 disposed between the first and the second optical shielding modulation layers 300 and 400.
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As mentioned before, the field of view of a photodiode array can be quantified as the view angle response. In this view angle test, light incoming from different angle is emitted onto the optical sensors 10a and 10b through the cover lens window 50 of the cover lens 40. The angle at which the light comes from is defined in X-Z plane in
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In contrast,
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In one embodiment, the light source 3 continuously emits light, and the OPS apparatus determine the direction of the body in motion 4 by the time difference between when the two side optical sensor 2a and 2b have max intensity of the received light. If the two side optical sensor 2a and 2b do not have the SVA structures, the time difference may be too small to be used to determine the time order, and therefore it is difficult for the OPS to determine the direction of the body in motion 4. Besides, since the ranges of the view angle where the two side optical sensors 2a and 2b have high view angle response intensity may overlap each other as shown in
It is worthy to mention that although the side optical sensors 2a and 2b in
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In general, the SVA optical sensor can offer better selectivity on wavelength of a light source by the optical filter layer 600. That is, the optical filter layer 600 can only have narrow band in light transmission and hence only allow light with a predetermined wavelength to pass. As a result, the SVA optical can more effectively block undesired ambient light with other wavelength. In other words, in this case, the spatial selectivity can be mainly offered by the first and second optical shielding modulation layers 300 and 400 and the wavelength selectivity can be mainly offered by the optical filter layer 600. Therefore, the signal to noise performance for gesture and motion sensing can be further improved. The optical filter layer 600 substantially has a layer structure, so it can be easily compatible with the manufacturing process for the other components of the SVA optical sensor depending on used material and fine structures of the optical filter layer 600.
While particular embodiments of the present invention have been shown and described, it will be obvious to those skilled in the art that, based upon the teachings herein, changes and modifications may be made without departing from this invention and its broader aspects. Therefore, the appended claims are intended to encompass within their scope of all such changes and modifications as are within the true spirit and scope of the exemplary embodiment(s) of the present invention.
This application claims the benefit of US. Provisional Patent Application No. 61/844,390, filed on Sep. 30, 2013, in the United States Patent and Trademark Office, the disclosure of which is incorporated herein in its entirety by reference.
Number | Date | Country | |
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61884390 | Sep 2013 | US |