S. A. Campbell, "The Possibility of Semi-Insulating Silicon Wafers", 1995 IEEE MTT-S International Microwave Symposium Workshop WFFA Silicon RF Technology, pp. 1-7, May 1995. |
M. H. Hanes, et al. "MICROX.TM.-An All Silicon Technology For Monolithic Microwave Integrated Circuits", IEEE Electron Device Letters, vol. 14, No. 5, pp. 219-221, May 1993. |
E. H. Nicollian and J. R. Brews, "MOS (Metal Oxide Semiconductor) Physics and Technology", John Wiley & Sons, New York, (1982), pp. 749-750. |
K. Anzai, F. Otoi, M. Ohnishi, and H. Kitabayashi, "Fabrication Of High Speed 1 micron FIPOS/CMOS", Electronics Devices Group Oki Electric Industry Co. Ltd., Japan, (1984), pp. 796-799. |
H. Takai and T. Itch, "Porous Silicon Layers And Its Oxide For The Silicon-On-Insulator Structure", J. Appl. Phys. vol. 60, No. 1., (Jul. 1, 1986), pp. 222-225. |
"Polysilicone Layer With Oxygen Improves Devices", Electronics International, vol. 48, No. 13, Jun. 26, 1975, pp. 5E-6E, XP002013570. |