This invention was made with Government support under contract MDA972-95-1-0017 awarded by the Defense Research Projects Agency. The Government has certain rights in this invention.
Number | Name | Date | Kind |
---|---|---|---|
3918033 | Case et al. | Nov 1975 | |
3986177 | Picquendar et al. | Oct 1976 | |
4090254 | Ho et al. | May 1978 | |
4146902 | Tanimoto et al. | Mar 1979 | |
4590589 | Gerzberg | May 1986 | |
4612448 | Strack | Sep 1986 | |
4677455 | Okajima | Jun 1987 | |
5321285 | Lee et al. | Jun 1994 | |
5324966 | Muraoka et al. | Jun 1994 | |
5390145 | Nakasha et al. | Feb 1995 | |
5396454 | Nowak | Mar 1995 | |
5412598 | Shulman | May 1995 | |
5464994 | Shinohe et al. | Nov 1995 | |
5471419 | Sankaranarayanan et al. | Nov 1995 | |
5525820 | Furuyama | Jun 1996 | |
5543652 | Ikeda et al. | Aug 1996 | |
5587944 | Shen et al. | Dec 1996 | |
5689458 | Kuriyama | Nov 1997 | |
5874751 | Iwamuro et al. | Feb 1999 | |
5910738 | Shinohe et al. | Jun 1999 | |
5914503 | Iwamuro et al. | Jun 1999 | |
5936267 | Iwamuro | Aug 1999 | |
5939736 | Takahashi | Aug 1999 | |
5981984 | Iwaana et al. | Nov 1999 |
Number | Date | Country |
---|---|---|
2 110 326 | Jun 1972 | FR |
57-208177 | Dec 1982 | JP |
Entry |
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Sze, S. M., Physics of Semiconductor Devices, 2nd ed., John Wiley & Sons, 1981.* |
Patent Abstracts of Japan, No. 57208177, Semiconductor Negative Resistance Element, Dec. 21, 1982. |
Baliga, B. Jayant, Modern Power Devices, 1987, pp. 349-350. |
Plummer, James D. and Scharf, Brad W., Insulated-Gate Planar Thyristors: I-Structure and Basic Operation, Feb. 1980, pp. 380-386. |
F.Nemati and J.D. Plummer, A Novel High Density, Low Voltage SRAM Cell with a Vertical NDR Device, Center for Integrated Systems, Stanford University, Stanford, CA 94305. |
F.Nemati and J.D. Plummer, A Novel Vertical Storage SRAM Cell, Student Paper written for Center for Integrated Systems, Stanford University, Stanford, CA 94305. |