Claims
- 1. A semiconductor component, comprising:
a semiconductor body; a layer structured with interspaces, said layer carried by said semiconductor body and having a side facing away from said semiconductor body; a passivation covering said side of said structured layer facing away from said semiconductor body and filling said interspaces in said structured layer, said passivation including at least two double passivating layers applied one above another, and said at least two double passivating layers including a double passivating layer disposed furthest from said semiconductor body and a preceding double passivating layer having a planarized top side; each of said double passivating layers formed of two passivating layers of different dielectric materials; and at least said double passivating layer disposed furthest from said semiconductor body applied with uniform thickness to said planarized top side of said preceding double passivating layer.
- 2. The component according to claim 1, wherein at least one of said double passivating layers contains a passivating layer of oxide and a passivating layer of nitride.
- 3. The component according to claim 1, wherein said structured layer is a metallization layer applied to at least one layer of a dielectric on a top side of said semiconductor body.
- 4. The component according to claim 3, wherein said metallization layer forms conductor surfaces of a capacitively measuring fingerprint sensor, and said at least two double passivating layers include a double passivating layer disposed furthest from said metallization layer and having a surface forming a bearing surface for a fingertip.
Priority Claims (1)
Number |
Date |
Country |
Kind |
198 30 832.9 |
Jul 1998 |
DE |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of copending International Application No. PCT/DE99/01982, filed Jul. 1, 1999, which designated the United States.
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/DE99/01982 |
Jul 1999 |
US |
Child |
09757328 |
Jan 2001 |
US |