Patent Grant
8444793
1. Field of the Invention
The present invention relates to a fabricating method, and more particularly, to a semiconductor device and a fabricating method thereof.
2. Description of the Prior Art
A conventional fabricating method utilizes liquid glue to stick two substrates. However, since the glue is fluid, the thickness of the glue can not be adjusted according to different design requirements, and the traditional semiconductor device and the fabricating method thereof can not provide good positioning precision, enough peeling strength, and high production amount.
In addition, if the glue has defects when the traditional semiconductor device is fabricated, it is difficult to remove the glue completely to repair the traditional semiconductor device.
It is therefore one of the objectives of the present invention to provide a semiconductor device and a fabricating method thereof that are capable of providing higher positioning precision, higher production amount, and higher peeling strength for the semiconductor device applied to a compact camera module (CCM), a wafer level lens, or a pico projector. The thickness of the adhesive film of the semiconductor device can be adjusted according to different design requirements, and the solid adhesive film of the semiconductor device is repairable.
According to an embodiment of the present invention, a fabricating method of a semiconductor device is disclosed. The fabricating method comprises: providing a first substrate; forming a soft dry film having an adhesive film and a release film; sticking the soft dry film on the first substrate with the adhesive film; removing the release film; sticking a second substrate on the adhesive film; and heating the adhesive film to solidify the adhesive film to form a solid adhesive film.
According to an embodiment of the present invention, a semiconductor device is disclosed. The semiconductor device comprises: a first substrate, a solid adhesive film, and a second substrate. The solid adhesive film is formed on the first substrate, and the second substrate is formed on the solid adhesive film.
Briefly summarized, the semiconductor device and the fabricating method thereof disclosed by the present invention can provide higher positioning precision, higher production amount, and higher peeling strength for the semiconductor device applied to a compact camera module (CCM), a wafer level lens, or a pico projector. The thickness of the adhesive film of the semiconductor device can be adjusted according to different design requirements, and the solid adhesive film of the semiconductor device is repairable.
These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
Certain terms are used throughout the following description and claims to refer to particular components. As one skilled in the art will appreciate, hardware manufacturers may refer to a component by different names. This document does not intend to distinguish between components that differ in name but in function. In the following discussion and in the claims, the terms “include”, “including”, “comprise”, and “comprising” are used in an open-ended fashion, and thus should be interpreted to mean “including, but not limited to . . . ”.
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In addition, since the adhesive film 122 comprises a thermal plastic material, when the solid adhesive film 124 has defects, the fabricating method of the present invention can further comprise performing a repair process by heating the solid adhesive film 124 to remove the solid adhesive film 124, and a new solid adhesive film can be formed according to the above steps shown in
Please refer to
Step 700: Start.
Step 710: Provide a first substrate of the semiconductor device.
Step 720: Form a soft dry film having an adhesive film and a release film.
Step 730: Stick the soft dry film on the first substrate with the adhesive film
Step 740: Remove the release film.
Step 750: Stick a second substrate of the semiconductor device on the adhesive film
Step 760: Heating the adhesive film to solidify the adhesive film to form a solid adhesive film.
Step 770: Determine whether the solid adhesive film has defects. If the solid adhesive film has defects, go to Step 780; if the solid adhesive film does not have defects, go to Step 790.
Step 780: Perform a repair process by heating the solid adhesive film to remove the solid adhesive film, and go back to Step 720.
Step 790: End.
Briefly summarized, the semiconductor device and the fabricating method thereof disclosed by the present invention can provide higher positioning precision, higher production amount, and higher peeling strength for the semiconductor device applied to a compact camera module (CCM), a wafer level lens, or a pico projector. The thickness of the adhesive film of the semiconductor device can be adjusted according to different design requirements, and the solid adhesive film of the semiconductor device is repairable.
Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention.
| Number | Name | Date | Kind |
|---|---|---|---|
| 4049483 | Loder et al. | Sep 1977 | A |
| 5783867 | Belke et al. | Jul 1998 | A |
| Number | Date | Country | |
|---|---|---|---|
| 20110195257 A1 | Aug 2011 | US |
