The present disclosure relates to the field of semiconductor integrated circuit fabrication and, in particular to, a semiconductor device and a method of fabricating the same.
Semiconductor-on-insulator (SOI) structures contain a lower substrate, a buried insulating layer and an upper semiconductor layer and have many advantages over conventional semiconductor substrates, such as latch-up prevention, mitigated short-channel effects in devices fabricated on such structures, increased radiation resistance and the like. Therefore, they have been widely used in radio frequency (RF), high-voltage, radiation resistance and other fields.
In the field of SOI devices, suppressing the floating body effect has been being one of the focuses of research. One solution to the floating body effect is to release accumulated charge in the body region by means of body contact. Body contact involves bringing the electrically floating body region that is above the buried insulating layer and at the bottom of the upper semiconductor layer into contact with an external object, thereby preventing charge accumulation in the region. At present, conventional device structures for realizing body leading-out include Body-Tied-to-Source (BTS) structures, T-gate structures, H-gate structures, etc.
Reference is now made to
Limited by the critical dimensions (CDs) of the processes used to form the gate electrode layer 11, the source region 12, the drain region 13 and the body contact region 14 and overlay accuracy fluctuations of the photomasks used, a gate length L1 of the horizontal arm of the gate electrode layer 11 measured in the direction from the source region 12 to the body contact region 14 should not be too small (e.g., not smaller than 0.3 microns). However, an excessive gate length L1 of the horizontal arm of the gate electrode layer 11 measured in the direction from the source region 12 to the body contact region 14 may degrade the device's performance. For example, a gate oxide layer (not shown) is formed between the gate electrode layer 11 and the upper semiconductor layer, and the excessive gate length L1 may lead to excessive parasitic capacitance between the horizontal arm of the gate electrode layer 11, the gate oxide layer and the upper semiconductor layer, as well as other problems such as increased power consumption and a reduced on-current.
Therefore, there is an urgent need for improving device performance while taking into account process fluctuations.
It is an objective of the present disclosure to provide a semiconductor device and a method of fabricating the device, which enables the device to have improved performance while taking into account fluctuations in the process used to form a gate electrode layer and a body contact region.
To this end, the present disclosure provides a semiconductor device including:
Optionally, a shallow trench isolation structure may be formed on the buried insulating layer such as to surround the source region, the drain region and the body contact region.
Optionally, the main gate may extend on the side away from the first portion from over the semiconductor layer to over the shallow trench isolation structure.
Optionally, the first portion may extend on both sides from over the semiconductor layer to over the shallow trench isolation structure.
Optionally, the second portion may be aligned with the main gate on the side of the first portion away from the main gate.
Optionally, the body contact region may have a Π-like shape, a horizontal arm of the Π-like shape located in the semiconductor layer on the side of the second portion away from the first portion, and vertical arms of the Π-like shape coming into contact with the first portion or not on the side away from the horizontal arm.
Optionally, a first ion-doped region may be formed in the main gate and the first portion and a second ion-doped region in the second portion, wherein the source region, the drain region and the first ion-doped region are of the same conductivity type; the body contact region and the second ion-doped region are of the same conductivity type; and the conductivity type of the body contact region is different from that of the source region.
Optionally, a gate dielectric layer may be formed between the gate electrode layer and the semiconductor layer.
The present disclosure also provides a method of fabricating a semiconductor device, including:
Optionally, the body contact region may have a Π-like shape, a horizontal arm of the Π-like shape located in the semiconductor layer on the side of the second portion away from the first portion, and vertical arms of the Π-like shape coming into contact with the first portion or not on the side away from the horizontal arm.
Optionally, the first ion-doped region may be formed in the main gate and the first portion at the same time as the formation of the source region and the drain region in the semiconductor layer on opposing sides of the main gate, and the second ion-doped region may be formed in the second portion at the same time as the formation of the body contact region in the semiconductor layer on the side of the first portion away from the main gate, wherein the source region, the drain region and the first ion-doped region are of the same conductivity type; the body contact region and the second ion-doped region are of the same conductivity type; and the conductivity type of the body contact region is different from that of the source region.
Compared with the prior art, the present disclosure has the benefits as follows:
In
Objectives, advantages and features of the present disclosure will become more apparent upon reading the following more detailed description of semiconductor devices and methods proposed in the disclosure with reference to the accompanying drawings. Note that the figures are provided in a very simplified form not necessarily drawn to exact scale and for the only purpose of facilitating easy and clear description of the disclosed embodiments.
In one embodiment of the present disclosure, there is provided a semiconductor device including a semiconductor-on-insulator (SOI) substrate, a gate electrode layer, a source region, a drain region and a body contact region. The SOI substrate includes, stacked from the bottom upward, a lower substrate, a buried insulating layer and a semiconductor layer. The gate electrode layer is formed on the semiconductor layer and includes a main gate and an extended gate. The extended gate includes a first portion joined to the main gate and a second portion located on the side of the first portion away from the main gate. The first portion is joined to the second portion. The source region and the drain region are formed in the semiconductor layer respectively on opposing sides of the main gate. A length of the second portion is smaller than a length of the first portion on the semiconductor layer. The body contact region is formed in the semiconductor layer on the side of the first portion away from the main gate and at least contacts the second portion.
The semiconductor device according to this embodiment will be described in detail below with reference to
The SOI substrate includes, stacked from the bottom upward, a lower substrate 201, a buried insulating layer 202 and a semiconductor layer 203. The semiconductor layer 203 may be made of any suitable semiconductor materials including, but not limited to, silicon, germanium, silicon germanium, silicon germanium carbide, silicon carbide and other semiconductors. The buried insulating layer 202 is, for example, a silicon oxide layer.
An active area (not shown) is formed in the semiconductor layer 203 and is surrounded by a shallow trench isolation structure (not shown). A bottom surface of the shallow trench isolation structure may contact the buried insulating layer 202 or not, and a top surface of the shallow trench isolation structure may be flush with, slightly lower than or slightly higher than a top surface of the semiconductor layer 203. The shallow trench isolation structure may be made of silicon oxide, silicon oxynitride or the like.
The gate electrode layer 21 is formed on the semiconductor layer 203. The gate electrode layer 21 includes a main gate 211 and an extended gate 212. The extended gate 212 includes a first portion 2121 joined to the main gate 211 and a second portion 2122 located on the side of the first portion 2121 away from the main gate 211. The first portion 2121 is joined to the second portion 2122.
The main gate 211 and the first portion 2121 may make up a T-shaped structure. The main gate 211 may form a vertical arm of the T-shaped structure, and the first portion 2121 may form a horizontal arm of the T-shaped structure.
A gate dielectric layer (not shown) is formed between the gate electrode layer 21 and the semiconductor layer 203. The gate electrode layer 21, the gate dielectric layer and the semiconductor layer 203 form a capacitor. The capacitor made up of the extended gate 212, the gate dielectric layer and the semiconductor layer 203 is a parasitic capacitor.
The gate dielectric layer may be made of silicon oxide (with a relative dielectric constant of 4.1) or another high-k dielectric with a relative dielectric constant greater than 7. Examples of the gate dielectric layer may include, but are not limited to, silicon oxynitride, titanium dioxide, tantalum pentoxide, etc. Alternatively, the gate dielectric layer may be made of a low-dielectric-constant material such as silicon oxycarbide (SiOC, with a relative dielectric constant of 2.5), inorganic or organic spin-on glass (SOG, with a relative dielectric constant of 3 or lower), etc. The gate dielectric layer made of a low-dielectric-constant material enables the capacitor to have lower capacitance.
The source region 22 and the drain region 23 are formed in the semiconductor layer 203 on opposite sides of the main gate 211. Since the semiconductor layer 203 is very thin, the source region 22 and the drain region 23 may extend through the entire thickness of the semiconductor layer 203 or part thereof. A region between the source region 22 and the drain region 23 under the main gate 211 forms a channel region.
A length of the second portion 2122 is smaller than a length of the first portion 2121 on the semiconductor layer 203. For example, as shown in
The main gate 211 extends on the side away from the first portion 2121 from over the semiconductor layer 203 to over the shallow trench isolation structure. The first portion 2121 extends on both sides from over the semiconductor layer 203 to over the shallow trench isolation structure. In this way, the first portion 2121 resides on both the semiconductor layer 203 and the shallow trench isolation structure, while the second portion 2122 resides only on the semiconductor layer 203. The length L2 of the second portion 2122 is smaller than the length L3 of the first portion 2121 on the semiconductor layer 203.
On the side of the first portion 2121 away from the main gate 211, the second portion 2122 is aligned with, partially overlaps or is totally staggered from the main gate 211. The length L2 of the second portion 2122 may be greater than, smaller than or equal to a length L4 of the main gate 211. When the second portion 2122 is aligned with the main gate 211 on the side of the first portion 2121 away from the main gate 211, the shortest electron transmission path can be achieved.
The body contact region 24 is formed in the semiconductor layer 203 on the side of the first portion 2121 away from the main gate 211, and it extends through the entire thickness of the semiconductor layer 203 (see
The body contact region 24 contacts both the first portion 2121 and the second portion 2122. The body contact region 24 surrounds the second portion 2122 together with the first portion 2121. As used herein, the term “contact” refers to contact between boundaries as view from the top. Referring to
Alternatively, the body contact region 24 may only contact the second portion 2122. In this case, the body contact region 24 may be located in the semiconductor layer 203 on the side of the second portion 2122 away from the first portion 2121. Moreover, the body contact region 24 may extend toward the first portion 2121 so that the second portion 2122 is partially surrounded by the body contact region 24. Referring to
Notably, while several embodiments of contact of the body contact region 24 with the second portion 2122 are illustrated in
A first ion-doped region 25 is formed in the main gate 211 and the first portion 2121, and a second ion-doped region 26 is formed in the second portion 2122. The first ion-doped region 25 may extend through the entire thickness of the main gate 211 and the first portion 2121 (see
The first ion-doped region 25, the source region 22 and the drain region 23 may be simultaneously formed using the same ion implantation process in the gate electrode layer 21 (more precisely, in the main gate 211 and the first portion 2121) and the semiconductor layer 203 (i.e., the ion-implanted region B1 in
The second ion-doped region 26 and the body contact region 24 may be simultaneously formed using the same ion implantation process in the second portion 2122 and the semiconductor layer 203, respectively (i.e., the ion-implanted region B2 in
The source region 22, the drain region 23 and the first ion-doped region 25 are of the same conductivity type, and the body contact region 24 and the second ion-doped region 26 are of the same conductivity type. The conductivity type of the body contact region 24 may be either the same as or different from that of the source region 22. In case of the body contact region 24 and the source region 22 having different conductivity types, the resulting semiconductor device may be an enhanced field-effect transistor. In case of the body contact region 24 and the source region 22 being of the same conductivity type, the resulting semiconductor device may be a depleted field-effect transistor.
In case of the body contact region 24 and the source region 22 being of different conductivity types, if the source region 22, the drain region 23 and the first ion-doped region 25 are N-type, then the body contact region 24 and the second ion-doped region 26 will be P-type; if the source region 22, the drain region 23 and the first ion-doped region 25 are P-type, then the body contact region 24 and the second ion-doped region 26 will be N-type. In case of the body contact region 24 and the source region 22 being of the same conductivity type, the source region 22, the drain region 23, the first ion-doped region 25, the body contact region 24 and the second ion-doped region 26 may all be either N-type or P-type. N-type ions may include, for example, phosphorus ions and arsenic ions, and p-type ions may include, for example, boron ions and gallium ions.
As can be seen from the above description of the semiconductor device, for the extended gate 212 of the gate electrode layer 21, the body contact region 24 can serve as body leading-out only if it is in contact with the extended gate 212, and the source region 22 and the drain region 23 are also required to contact the extended gate 212. In order to ensure contact of the body contact region 24, the source region 22 and the drain region 23 with the extended gate 212, it is necessary for ion implantation region design for the body contact region 24, the source region 22 and the drain region 23 to take into account the critical dimensions (CDs) of the processes used to form the extended gate 212, the body contact region 24, the source region 22 and the drain region 23 and overlay accuracy fluctuations of the photomasks used. As it is necessary for the ion implantation regions for the body contact region 24, the source region 22 and the drain region 23 to extend from the semiconductor layer 203 to the extended gate 212 (e.g., to the interface BB′ of the ion-implanted region B2 and the ion-implanted region B1 in
In view of this, in the semiconductor device of the present disclosure, the extended gate 212 is designed to have the first portion 2121 joined to main gate 211 and the second portion 2122 located on the side of the first portion 2121 away from the main gate 211. Moreover, the length L2 of the second portion 2122 is smaller than the length L3 of the first portion 2121 on the semiconductor layer 203. In addition, the ion implantation region for forming the source region 22 and the drain region 23 encompasses the first portion 2121 (i.e., the ion-implanted region B1), and the ion implantation region for forming the body contact region 24 encompasses the second portion 2122 (i.e., the ion-implanted region B2). This design can circumvent the influence of the critical dimensions (CDs) of the processes used to form the source region 22, the drain region 23 and the body contact region 24 and overlay accuracy fluctuations of the photomasks used, while allowing the portion of the extended gate 212 where it comes into contact with the body contact region 24 (i.e., the second portion 2122) to have a reduced length. Thus, compared with the structure of the horizontal arm of the gate electrode layer 11 of
In an embodiment of the present disclosure, there is provided a method of fabricating a semiconductor device.
Step S1: Provide a semiconductor-on-insulator (SOI) substrate which includes, stacked from the bottom upward, a lower substrate, a buried insulating layer and a semiconductor layer.
Step S2: Form a gate electrode layer on the semiconductor layer. The gate electrode layer includes a main gate and an extended gate. The extended gate includes a first portion joined to the main gate and a second portion located on the side of the first portion away from the main gate. The first portion is joined to the second portion.
Step S3: Form, in the semiconductor layer, a source region and a drain region on opposing sides of the main gate and a body contact region on the side of the first portion away from the main gate. A length of the second portion is smaller than a length of the first portion on the semiconductor layer. The body contact region at least contacts the second portion.
The method of this embodiment is further detailed below with reference to
In step S1, a SOI substrate is provided, which includes, stacked from the bottom upward, a lower substrate 201, a buried insulating layer 202 and a semiconductor layer 203, the semiconductor layer 203 may be made of any suitable semiconductor materials including, but not limited to, silicon, germanium, silicon germanium, silicon germanium carbide, silicon carbide and other semiconductors. The buried insulating layer 202 is, for example, a silicon oxide layer.
An active area (not shown) is formed in the semiconductor layer 203, the active area is surrounded by a shallow trench isolation structure (not shown). A bottom surface of the shallow trench isolation structure may contact the buried insulating layer 202 or not, and a top surface of the shallow trench isolation structure may be flush with, slightly lower than or slightly higher than a top surface of the semiconductor layer 203. The shallow trench isolation structure may be made of silicon oxide, silicon oxynitride or the like.
In step S2, a gate electrode layer 21 is formed on the semiconductor layer 203. The gate electrode layer 21 includes a main gate 211 and an extended gate 212. The extended gate 212 includes a first portion 2121 joined to the main gate 211 and a second portion 2122 located on the side of the first portion 2121 away from the main gate 211. The first portion 2121 is joined to the second portion 2122.
The main gate 211 and the first portion 2121 may make up a T-shaped structure.
The main gate 211 may form a vertical arm of the T-shaped structure, and the first portion 2121 may form a horizontal arm of the T-shaped structure.
A gate material may be deposited over the semiconductor layer 203 and the shallow trench isolation structure, and an etching process may be then performed to form the gate electrode layer 21 with a desired pattern.
Before the gate electrode layer 21 is formed on the semiconductor layer 203, a gate dielectric layer (not shown) may be formed on the semiconductor layer 203. The gate electrode layer 21, the gate dielectric layer and the semiconductor layer 203 form a capacitor. The capacitor made up of the extended gate 212, the gate dielectric layer and the semiconductor layer 203 is a parasitic capacitor.
The gate dielectric layer may be made of silicon oxide (with a relative dielectric constant of 4.1) or another high-k dielectric with a relative dielectric constant greater than 7. Examples of the gate dielectric layer may include, but are not limited to, silicon oxynitride, titanium dioxide, tantalum pentoxide, etc. Alternatively, the gate dielectric layer may be made of a low-dielectric-constant material such as silicon oxycarbide (SiOC, with a relative dielectric constant of 2.5), inorganic or organic spin-on glass (SOG, with a relative dielectric constant of 3 or lower), etc. The gate dielectric layer made of a low-dielectric-constant material enables the capacitor to have lower capacitance.
In step S3, in the semiconductor layer 203, a source region 22 and a drain region 23 are formed on opposing sides of the main gate 211, and a body contact region 24 is formed on the side of the first portion 2121 away from the main gate 211.
The formation of the source region 22 and the drain region 23 in the semiconductor layer 203 on opposing sides of the main gate 211 may precede the formation of the body contact region 24 in the semiconductor layer 203 on the side of the first portion 2121 away from the main gate 211. Alternatively, the formation of the body contact region 24 in the semiconductor layer 203 on the side of the first portion 2121 away from the main gate 211 may precede the formation of the source region 22 and the drain region 23 in the semiconductor layer 203 on opposing sides of the main gate 211.
Since the semiconductor layer 203 is very thin, the source region 22 and the drain region 23 may extend through the entire thickness of the semiconductor layer 203 or part thereof. A region between the source region 22 and the drain region 23 under the main gate 211 forms a channel region.
A length of the second portion 2122 is smaller than a length of the first portion 2121 on the semiconductor layer. For example, as shown in
The main gate 211 extends on the side away from the first portion 2121 from over the semiconductor layer 203 to over the shallow trench isolation structure. The first portion 2121 extends on both sides from over the semiconductor layer 203 to over the shallow trench isolation structure. In this way, the first portion 2121 resides on both the semiconductor layer 203 and the shallow trench isolation structure, while the second portion 2122 resides only on the semiconductor layer 203. The length L2 of the second portion 2122 is smaller than the length L3 of the first portion 2121 on the semiconductor layer 203.
On the side of the first portion 2121 away from the main gate 211, the second portion 2122 is aligned with, partially overlaps or is totally staggered from the main gate 211. The length L2 of the second portion 2122 may be greater than, smaller than or equal to a length L4 of the main gate 211. When the second portion 2122 is aligned with the main gate 211 on the side of the first portion 2121 away from the main gate 211, the shortest electron transmission path can be achieved.
The body contact region 24 extends through the entire thickness of the semiconductor layer 203 (see
The body contact region 24 contacts both the first portion 2121 and the second portion 2122. The body contact region 24 surrounds the second portion 2122 together with the first portion 2121. As used herein, the term “contact” refers to contact between boundaries as view from the top. Referring to
Alternatively, the body contact region 24 may only contact the second portion 2122. In this case, the body contact region 24 may be located in the semiconductor layer 203 on the side of the second portion 2122 away from the first portion 2121. Moreover, the body contact region 24 may extend toward the first portion 2121 so that the second portion 2122 is partially surrounded by the body contact region 24. Referring to
Notably, while several embodiments of contact of the body contact region 24 with the second portion 2122 are illustrated in
A first ion-doped region 25 is formed in the main gate 211 and the first portion 2121 at the same time as the formation of the source region 22 and the drain region 23 in the semiconductor layer 203 on opposing sides of the main gate 211. Thus, the first ion-doped region 25, the source region 22 and the drain region 23 may be simultaneously formed using the same ion implantation process in the gate electrode layer 21 (more precisely, in the main gate 211 and the first portion 2121) and the semiconductor layer 203 (i.e., the ion-implanted region B1 in
A second ion-doped region 26 is formed in the second portion 2122 at the same time as the formation of the body contact region 24 in the semiconductor layer 203 on the side of the first portion 2121 away from the main gate 211. Thus, the second ion-doped region 26 and the body contact region 24 may be simultaneously formed using the same ion implantation process in the second portion 2122 and the semiconductor layer 203, respectively (i.e., the ion-implanted region B2 in
It is to be noted that the source region 22, the drain region 23 and the first ion-doped region 25 may alternatively be formed using different ion implantation processes (the formation of the source region 22 and the drain region 23 may precede the formation of the first ion-doped region 25, or the formation of the first ion-doped region 25 may precede the formation of the source region 22 and the drain region 23). Likewise, the body contact region 24 and the second ion-doped region 26 may alternatively be formed using different ion implantation processes (the formation of the body contact region 24 may precede the formation of the second ion-doped region 26, or the formation of the second ion-doped region 26 may precede the formation of the body contact region 24).
The first ion-doped region 25 may extend through the entire thickness of the main gate 211 and the first portion 2121 (see
The source region 22, the drain region 23 and the first ion-doped region 25 are of the same conductivity type, and the body contact region 24 and the second ion-doped region 26 are of the same conductivity type. The conductivity type of the body contact region 24 may be either the same as or different from that of the source region 22. In case of the body contact region 24 and the source region 22 having different conductivity types, the resulting semiconductor device may be an enhanced field-effect transistor. In case of the body contact region 24 and the source region 22 being of the same conductivity type, the resulting semiconductor device may be a depleted field-effect transistor.
In case of the body contact region 24 and the source region 22 being of different conductivity types, if the source region 22, the drain region 23 and the first ion-doped region 25 are N-type, then the body contact region 24 and the second ion-doped region 26 will be P-type; if the source region 22, the drain region 23 and the first ion-doped region 25 are P-type, then the body contact region 24 and the second ion-doped region 26 will be N-type. In case of the body contact region 24 and the source region 22 being of the same conductivity type, the source region 22, the drain region 23, the first ion-doped region 25, the body contact region 24 and the second ion-doped region 26 may all be either N-type or P-type. N-type ions may include, for example, phosphorus ions and arsenic ions, and P-type ions may include, for example, boron ions and gallium ions.
As can be seen from the above description of steps S1 to S3, for the extended gate 212 of the gate electrode layer 21, the body contact region 24 can serve as a body leading-out only if it is in contact with the extended gate 212, and the source region 22 and the drain region 23 are also required to contact the extended gate 212. In order to ensure contact of the body contact region 24, the source region 22 and the drain region 23 with the extended gate 212, it is necessary for ion implantation region design for the body contact region 24, the source region 22 and the drain region 23 to take into account the critical dimensions (CDs) of the processes used to form the extended gate 212, the body contact region 24, the source region 22 and the drain region 23 and overlay accuracy fluctuations of the photomasks used. As it is necessary for the ion implantation regions for the body contact region 24, the source region 22 and the drain region 23 to extend from the semiconductor layer 203 to the extended gate 212 (e.g., to the interface BB′ of the ion-implanted region B2 and the ion-implanted region B1 in
In view of this, in the method of the present disclosure, the extended gate 212 is designed to have the first portion 2121 joined to main gate 211 and the second portion 2122 located on the side of the first portion 2121 away from the main gate 211. Moreover, the length L2 of the second portion 2122 is smaller than the length L3 of the first portion 2121 on the semiconductor layer 203. In addition, the ion implantation region for forming the source region 22 and the drain region 23 encompasses the first portion 2121 (i.e., the ion-implanted region B1), and the ion implantation region for forming the body contact region 24 encompasses the second portion 2122 (i.e., the ion-implanted region B2). This design can circumvent the influence of the critical dimensions (CDs) of the processes used to form the source region 22, the drain region 23 and the body contact region 24 and overlay accuracy fluctuations of the photomasks used, while allowing the portion of the extended gate 212 where it comes into contact with the body contact region 24 (i.e., the second portion 2122) to have a reduced length. Thus, compared with the structure of the horizontal arm of the gate electrode layer 11 of
The description presented above is merely that of a few preferred embodiments of the present disclosure and is not intended to limit the scope thereof in any sense. Any and all changes and modifications made by those of ordinary skill in the art based on the above teachings fall within the scope as defined in the appended claims.
Number | Date | Country | Kind |
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202110580072.8 | May 2021 | CN | national |
Filing Document | Filing Date | Country | Kind |
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PCT/CN2021/107515 | 7/21/2021 | WO |