Claims
- 1. A manufacturing process of a semiconductor device comprising the steps of:applying a first insulating film to a principal plane of a semiconductor substrate; forming a conductive section having a contact portion on said first insulating film; applying a second insulating film to said conductive section; applying a silicon nitride film to said first and second insulating films; removing said silicon nitride film at least from a region above the contact portion of said conductive section so as to expose a portion of the second insulating film and leave a remainder silicon nitride portion; covering the remainder silicon nitride film and the exposed portion of the second insulating film with a third insulating film; and forming a conductive path through said second and third insulating films to the contact portion of said conductive section.
- 2. A manufacturing process of a semiconductor device comprising the steps of:applying a first insulating film to a principal plane of a semiconductor substrate; forming a conductive section having a contact portion thereof on said first insulating film; applying a second insulating film to said conductive section; applying a silicon nitride film to said first and second insulating films; applying a third insulating film to said silicon nitride film; forming a first conductive path through said third insulating film, said silicon nitride film and said second insulating film to the contact portion of said conductive sections; embedding a plurality of conductors in the third insulating film; and forming a plurality of second conductive path through said third insulating film so that each reaches an embedded conductor and establishes electrical connection therewith.
- 3. A manufacturing process of a semiconductor device comprising the steps of:applying a first insulating film to a principal plane of a semiconductor substrate; forming a conductive section having a contact portion thereof on said first insulating film; applying a second insulating film to said conductive section; applying a silicon nitride film to said first and second insulating films; applying a third insulating film to said silicon nitride film; forming a first conductive path through said third insulating film, said silicon nitride film and said second insulating film to the contact portion of said conductive section; embedding a conductor having a contact portion thereof in said third insulating film; and forming a second conductive path through said third insulating film to the contact portion of said conductor.
- 4. A manufacturing process of a semiconductor device comprising the steps of:applying a first insulating film to a principal plane of a semiconductor substrate; forming a conductive section having a contact portion thereof on said first insulating film; applying a second insulating film to said conductive section; applying a silicon nitride film to said first and second insulating films; applying a third insulating film to said silicon nitride film; forming a first conductive path through said third insulating film, said silicon nitride film and said second insulating film to the contact portion of said conductive section; embedding a conductor having a contact portion thereof to which another silicon nitride film is applied, in said third insulating film; and forming a second conductive path through said third insulating film and said another silicon nitride film to the contact portion of said conductor.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-11624 |
Jan 1996 |
JP |
|
Parent Case Info
This application is a divisional of application Ser. No. 08/687,624 filed Jul. 26, 1996 now U.S. Pat. No. 6,087,710.
US Referenced Citations (25)
Foreign Referenced Citations (7)
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