Claims
- 1. A method for producing a semiconductor device comprising:implanting predetermined ions in a portion of a substrate region destined for forming a thermally oxidized film to amorphousize a substrate region, and further forming a thermally oxidized film on the amorphousized region subsequently, to provide an oxide film increased in thickness selectively in said amorphousized substrate region.
- 2. The method for producing a semiconductor device as defined in claim 1 wherein said ions comprise at least one selected from the group consisting silicon, germanium, argon, boron and phosphorus ions.
- 3. A method for producing a semiconductor device comprising:implanting predetermined ions in a center region of a substrate destined for an oxide film for device isolation excluding an end portion destined to be a possible bird's beak to amorphousize a substrate, and subsequently forming the oxide film on the amorphized region for device isolation to provide an increased oxide film thickness only in a center region of the oxide film for device isolation.
- 4. The method for producing a semiconductor device as defined in claim 3 wherein the film thickness of the portion of the oxide film for device isolation corresponding to the amorphousized portion is set to a value which does not permit ions to travel to a substrate portion directly below the oxide film for device isolation at the time of ion implantation for forming an impurity layer.
- 5. The method for producing a semiconductor device as defined in claim 3 wherein said ions comprise at least one selected from the group consisting silicon, germanium, argon, boron and phosphorus ions.
- 6. A method for producing a semiconductor device comprising the steps of:(a) forming a nitride film in a pre-set region of a substrate containing a defect; (b) etching said pre-set region of the nitride film to form a pattern of nitride film; (c) depositing an oxide film to a pre-set thickness on the entire surface of the substrate; (d) forming a sidewall oxide film by etching off said oxide film to permit the oxide film to remain only on an inner side of an opening of said patterned nitride film constituting a field oxide film; (e) implanting predetermined ions, using said nitride film and the sidewall oxide film as a mask, to amorphousize an exposed portion of the substrate; (f) etching off said sidewall oxide film; and (g) forming an oxide film on the amorphized portion for device isolation by forming an oxide film, using said nitride film as a mask, so that the oxide film is increased in film thickness in said amorphousized portion.
- 7. The method for producing a semiconductor device as defined in claim 6 wherein the film thickness of the portion of the oxide film for device isolation corresponding to the amorphousized portion is set to a value which does not permit ions to travel to a substrate portion directly below the oxide film for device isolation at the time of ion implantation for forming an impurity layer.
- 8. The method for producing a semiconductor device as defined in claim 6 wherein said ions comprise at least one selected from the group consisting silicon, germanium, argon, boron and phosphorus ions.
Priority Claims (2)
Number |
Date |
Country |
Kind |
10-151600 |
Jun 1998 |
JP |
|
10-287402 |
Oct 1998 |
JP |
|
Parent Case Info
The present application is a divisional application of U.S. patent application Ser. No. 09/321,885, filed on May 28, 1999 now U.S. Pat. No. 6,214,700.
US Referenced Citations (4)
Foreign Referenced Citations (3)
Number |
Date |
Country |
000671760A2-A2 |
Sep 1995 |
EP |
5275299 |
Oct 1993 |
JP |
11135614 |
May 1999 |
JP |