Claims
- 1. A photosensor comprising, in a semiconductor substrate of a first conductivity type, a photodiode composed of a semiconductor domain of a conductivity type opposite of the first conductivity type, all of a lower surface and sides of said photodiode being surrounded by a semiconductor domain of the conductivity type opposite of the first conductivity type and of a high impurity concentration, and a semiconductor domain of the first conductivity type forming a junction with said semiconductor domain of the conductivity type opposite of the first conductivity type, wherein said photodiode is separated from other semiconductor elements by a separating domain composed of a semiconductor of the first conductivity type,
- wherein said other semiconductor elements include a transistor adjacent to said photodiode, with said transistor comprising a buried region and a diffusion region extending from a surface of said substrate to the buried region, and the diffusion region being arranged at one side of a base region, with said photodiode being arranged at the opposite side of said base region.
- 2. A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type, a photoelectric conversion element provided thereon, and a transistor for processing a signal from said photoelectric conversion element,
- wherein said photoelectric conversion element has a first region of the first conductivity type, a second region of a second, opposite conductivity type surrounding said first region, and a third region of the second conductivity type and having an impurity concentration greater than that of said second region, said third region surrounding all of sides and a lower surface of said second region,
- wherein said transistor is adjacent to a photoelectric conversion element, and comprises a buried region and a diffusion region extending from a surface of said substrate to said buried region, the diffusion region being arranged at one side of a base region, with the photoelectric conversion element being arranged at the opposite side of said base region.
- 3. A semiconductor device according to claim 2, wherein said transistor is a MOS transistor.
- 4. A semiconductor device according to claim 2, wherein said transistor is a bipolar transistor.
- 5. A semiconductor device according to claim 2, wherein said transistor is optically shielded by a light shielding layer provided thereon.
- 6. A semiconductor device according to claim 2, wherein said third region comprises a buried layer provided on said semiconductor substrate and under said second region, and a sub-region surrounding all of said sides of said second region.
- 7. A semiconductor device according to claim 6, wherein an electric contact is provided on a part of said sub-region.
- 8. A semiconductor device according to claim 7, wherein said electric contact is optically shielded by a light shielding layer provided thereon.
Priority Claims (2)
Number |
Date |
Country |
Kind |
61-044790 |
Feb 1986 |
JPX |
|
61-044791 |
Feb 1986 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 08/150,247, filed Nov. 9, 1993, now abandoned, which was a continuation of application Ser. No. 07/824,573, filed Jan. 23, 1992, now abandoned, which was a division of application Ser. No. 07/501,968, filed Mar. 29, 1990, now U.S. Pat. No. 5,106,765, which was a continuation of application Ser. No. 07/358,515, filed May 30, 1989, now abandoned which was a continuation of application Ser. No. 07/240,485, filed Sep. 6, 1988, now abandoned which was a continuation of application Ser. No. 07/018,457, filed Feb. 25, 1987, now abandoned.
US Referenced Citations (14)
Foreign Referenced Citations (4)
Number |
Date |
Country |
0139266 |
May 1985 |
EPX |
0226892 |
Jul 1987 |
EPX |
3205022 |
Sep 1982 |
DEX |
3425908 |
Aug 1983 |
DEX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
501968 |
Mar 1990 |
|
Continuations (5)
|
Number |
Date |
Country |
Parent |
150247 |
Nov 1993 |
|
Parent |
824573 |
Jan 1992 |
|
Parent |
358515 |
May 1989 |
|
Parent |
240485 |
Sep 1988 |
|
Parent |
18457 |
Feb 1987 |
|