Bi-MOS

Industry

CPC
Y10S148/009

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/009Bi-MOS

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit structure having a bipolar transistor with a thi...
- Patent number 6,191,457
- Issue date Feb 20, 2001
- Texas Instruments Incorporated
- Scott H. Prengle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiCMOS process for counter doped collector
- Patent number 6,124,180
- Issue date Sep 26, 2000
- Intel Corporation
- Stephen T. Chambers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making bipolar having graded or modulated collector
- Patent number 6,001,701
- Issue date Dec 14, 1999
- Lucent Technologies Inc.
- Michael Scott Carroll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit apparatus and associated fabrication
- Patent number 6,001,676
- Issue date Dec 14, 1999
- Matsushita Electronics Corporation
- Shigeki Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device with stabilization...
- Patent number 5,926,705
- Issue date Jul 20, 1999
- NEC Corporation
- Takuo Nishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a thick base oxide in a BiCMOS process
- Patent number 5,910,676
- Issue date Jun 8, 1999
- Texas Instruments Incorporated
- Scott H. Prengle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing Bi-CMOS
- Patent number 5,904,519
- Issue date May 18, 1999
- NEC Corporation
- Masaru Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming voltage clamp having a breakdown voltage of 40 Vdc
- Patent number 5,869,366
- Issue date Feb 9, 1999
- Delco Electronics Corporation
- Edward Herbert Honnigford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bimos device
- Patent number 5,866,446
- Issue date Feb 2, 1999
- Kabushiki Kaisha Toshiba
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor formed by a high energy ion implantation method
- Patent number 5,856,218
- Issue date Jan 5, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Atsushi Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with BICMOS circuit
- Patent number 5,824,560
- Issue date Oct 20, 1998
- U.S. Philips Corporation
- Willem Van Der Wel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-CMOS merged devices
- Patent number 5,811,860
- Issue date Sep 22, 1998
- Texas Instruments Incorporated
- Robert Howard Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming BiCMOS devices having mosfet and bipolar sections...
- Patent number 5,804,476
- Issue date Sep 8, 1998
- Samsung Electronics Co., Ltd.
- Young-Soo Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit having bipolar and MOS transistors...
- Patent number 5,763,920
- Issue date Jun 9, 1998
- NEC Corporation
- Toshio Komuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zener diodes on the same wafer with BiCDMOS structures
- Patent number 5,751,054
- Issue date May 12, 1998
- Siliconix Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS voltage clamp
- Patent number 5,734,186
- Issue date Mar 31, 1998
- Delco Electronics Corporation
- Edward Herbert Honnigford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating BiCMOS device
- Patent number 5,661,046
- Issue date Aug 26, 1997
- National Semiconductor Corporation
- Vida Ilderem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing BiMOS device
- Patent number 5,652,154
- Issue date Jul 29, 1997
- NEC Corporation
- Toshio Komuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming BiCMOS semiconductor devices
- Patent number 5,643,810
- Issue date Jul 1, 1997
- Samsung Electronics Co., Ltd.
- Young-Soo Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a Bi-MOS device
- Patent number 5,641,692
- Issue date Jun 24, 1997
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar type semiconductor device having small parasitic capacitanc...
- Patent number 5,548,155
- Issue date Aug 20, 1996
- Sony Corporation
- Ikuo Yoshihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a BiMOS device
- Patent number 5,523,242
- Issue date Jun 4, 1996
- Kabushiki Kaisha Toshiba
- Takeo Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor integrated circuit device
- Patent number 5,512,497
- Issue date Apr 30, 1996
- Hitachi, Ltd.
- Takahide Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a bipolar type semiconductor device
- Patent number 5,500,378
- Issue date Mar 19, 1996
- Sony Corporation
- Ikuo Yoshihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process for producing the same
- Patent number 5,488,251
- Issue date Jan 30, 1996
- Canon Kabushiki Kaisha
- Hidemasa Mizutani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiCMOS process for supporting merged devices
- Patent number 5,441,903
- Issue date Aug 15, 1995
- Texas Instruments Incorporated
- Robert H. Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making truly complementary and self-aligned bipolar and C...
- Patent number 5,439,833
- Issue date Aug 8, 1995
- National Semiconductor Corp.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for simultaneously fabricating a bipolar transistor and a f...
- Patent number 5,429,959
- Issue date Jul 4, 1995
- Texas Instruments Incorporated
- Michael C. Smayling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BICDMOS structures
- Patent number 5,426,328
- Issue date Jun 20, 1995
- Siliconix Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer formation in a semiconductor structure
- Patent number 5,424,572
- Issue date Jun 13, 1995
- National Semiconductor Corporation
- Alan G. Solheim
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated circuit structure having a bipolar transistor with a thi...

BiCMOS process for counter doped collector

Process for making bipolar having graded or modulated collector

Semiconductor integrated circuit apparatus and associated fabrication

Method for manufacturing a semiconductor device with stabilization...

Method for forming a thick base oxide in a BiCMOS process

Method of manufacturing Bi-CMOS

Method for forming voltage clamp having a breakdown voltage of 40 Vdc

Method of manufacturing bimos device

Bipolar transistor formed by a high energy ion implantation method

Method of manufacturing a semiconductor device with BICMOS circuit

Bi-CMOS merged devices

Method of forming BiCMOS devices having mosfet and bipolar sections...

Semiconductor integrated circuit having bipolar and MOS transistors...

Zener diodes on the same wafer with BiCDMOS structures

CMOS voltage clamp

Method of fabricating BiCMOS device

Method for manufacturing BiMOS device

Methods of forming BiCMOS semiconductor devices

Method for producing a Bi-MOS device

Bipolar type semiconductor device having small parasitic capacitanc...

Method of manufacturing a BiMOS device

Method of manufacturing a semiconductor integrated circuit device

Process for forming a bipolar type semiconductor device

Semiconductor device and process for producing the same

BiCMOS process for supporting merged devices

Method of making truly complementary and self-aligned bipolar and C...

Process for simultaneously fabricating a bipolar transistor and a f...

BICDMOS structures

Spacer formation in a semiconductor structure

Patents Applicationslast 30 patents