Claims
- 1. A process of producing a semiconductor device, comprising the steps of:forming a first polycrystalline silicon layer overlying a silicon oxide layer; forming an oxide film on said first polycrystalline silicon layer, said oxide film having a thickness such that tunnel current can flow therethrough; and forming a second polycrystalline silicon layer on the oxide film, the second polycrystalline silicon layer being thicker than the first polycrystalline silicon layer, wherein the second polycrystalline silicon layer is in electrical connection with the first polycrystalline silicon layer and is adapted to be charged with substantially a same voltage as that of the first polycrystalline silicon layer, and wherein crystal grains of the first and second polycrystalline silicon layers have different grain sizes.
- 2. The process of producing a semiconductor device according to claim 1, wherein the first and second polycrystalline silicon layers are doped with an n-type impurity.
- 3. The process of producing a semiconductor device according to claim 1, wherein the thickness of the oxide film is in a range between 1 and 4 nm.
- 4. The process of producing a semiconductor device according to claim 1, wherein the second polycrystalline silicon layer has a larger average grain size than that of the first polycrystalline silicon layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-047730 U |
Mar 1993 |
JP |
|
Parent Case Info
This application is a Continuation application of application Ser. No. 09/649,504, filed Aug. 28, 2000 now U.S. Pat. No. 6,610,569, which is a Continuation application of application Ser. No. 09/123,405, filed Jul. 28, 1998 now U.S. Pat. No. 6,133,094, which is a Divisional application of application Ser. No. 08/519,096, filed Aug. 24, 1995 now U.S. Pat. No. 5,793,097, which is a Continuation application of application Ser. No. 08/207,132, filed Mar. 7,1994 now abandoned, the contents of which are incorporated herein by reference in their entirety.
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Continuations (3)
|
Number |
Date |
Country |
Parent |
09/649504 |
Aug 2000 |
US |
Child |
10/460215 |
|
US |
Parent |
09/123405 |
Jul 1998 |
US |
Child |
09/649504 |
|
US |
Parent |
08/207132 |
Mar 1994 |
US |
Child |
08/519096 |
|
US |