Claims
- 1. A semiconductor device comprising:
- a base layer;
- a chip region formed on said base layer, said chip region including electrically coupled elements which form part of an electric circuit and interconnection means interconnecting said electrically coupled elements;
- a peripheral region which surrounds said chip region on said base layer, said peripheral region being a region other than said chip region and including no elements which form said electric circuit;
- a patterned stacked structure formed on said base layer in both said chip region and said peripheral region, said patterned stacked structure including a lower layer which is formed on said base layer, an intermediate layer which is formed on said lower layer and an upper layer formed on said intermediate layer,
- said upper layer and said intermediate layer aligned to one side surface of said lower layer in at least a part of said chip region,
- said intermediate layer and said upper layer covering another side surface opposite to said one side surface of said lower layer in at least a part of said peripheral region.
- 2. The semiconductor device as claimed in claim 1 which further comprises a substrate on which said base layer is formed, said intermediate layer consisting of a material having an etching rate smaller than an etching rate of a material of said base layer, said lower layer consisting of a material having an etching rate greater than the etching rate of the material of said intermediate layer.
- 3. The semiconductor device as claimed in claim 1 wherein said upper and lower layers are made of a material selected from a group including polysilicon and polycide.
- 4. The semiconductor device as claimed in claim 1 wherein said base layer is made of a material selected from a group including SiO.sub.2.
- 5. The semiconductor device as claimed in claim 1 wherein said intermediate layer is made of a material selected from a group including SiN and Ta.sub.2 O.sub.3.
Priority Claims (1)
Number |
Date |
Country |
Kind |
1-127502 |
May 1989 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 524,767, filed May 17, 1990, now abandoned.
US Referenced Citations (9)
Foreign Referenced Citations (6)
Number |
Date |
Country |
60-224278 |
Nov 1985 |
JPX |
63-168052 |
Jul 1988 |
JPX |
63-185065 |
Jul 1988 |
JPX |
63-308384 |
Dec 1988 |
JPX |
139067 |
Feb 1989 |
JPX |
14070 |
Jan 1990 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
524767 |
May 1990 |
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