with at least one ferroelectric layer

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CPC
H01L29/516

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/516with at least one ferroelectric layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
MOSFET gate engineerinng with dipole films
- Patent number 12,230,688
- Issue date Feb 18, 2025
- Applied Materials, Inc.
- Yong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method of manufacturing the same
- Patent number 12,230,711
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked ferroelectric structure
- Patent number 12,232,329
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layer structure including dielectric layer, methods of manufacturin...
- Patent number 12,218,217
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Yunseong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques to manufacture ferroelectric memory devices
- Patent number 12,211,538
- Issue date Jan 28, 2025
- Micron Technology, Inc.
- Giorgio Servalli
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,211,836
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor device
- Patent number 12,205,951
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Sangwook Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked ferroelectric structure
- Patent number 12,207,474
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices and methods of manufacturing the same
- Patent number 12,206,009
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative differential resistance device
- Patent number 12,206,021
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Kilsu Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elevationally-extending transistors, devices comprising elevational...
- Patent number 12,199,182
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of operating ferroelectric (Fe) FET based non-volatile memo...
- Patent number 12,200,942
- Issue date Jan 14, 2025
- Georgia Tech Research Corporation
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device structure and manufacturing method thereof
- Patent number 12,200,943
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Ting Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric channel field effect transistor
- Patent number 12,191,375
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming ferroelectric memory devices
- Patent number 12,185,551
- Issue date Dec 31, 2024
- WUXI SMART MEMORIES TECHNOLOGIES CO., LTD.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization enhancement structure for enlarging memory window
- Patent number 12,176,433
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric structure including a ferroelectric film having a fir...
- Patent number 12,176,413
- Issue date Dec 24, 2024
- Samsung Electronics Co., Ltd.
- Sanghyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cerium-doped ferroelectric materials and related devices and methods
- Patent number 12,166,098
- Issue date Dec 10, 2024
- The Board of Trustees of the Leland Stanford Junior University
- Paul C. McIntyre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM MFM structure with selective electrode etch
- Patent number 12,167,611
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hsiang Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 12,167,607
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for a ferroelectric field-effect transistor and related...
- Patent number 12,159,935
- Issue date Dec 3, 2024
- GlobalFoundries Dresden Module One Limited Liability Company & KG
- Halid Mulaosmanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with ferroelectric layer
- Patent number 12,160,994
- Issue date Dec 3, 2024
- Kioxia Corporation
- Tsunehiro Ino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carrier barrier layer for tuning a threshold voltage of a ferroelec...
- Patent number 12,154,965
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,154,986
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including ferroelectri...
- Patent number 12,148,829
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wilman Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate metal-ferroelectric-metal-insulator-semiconductor field...
- Patent number 12,150,309
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250056809
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC FIELD EFFECT TRANSISTOR, MEMORY DEVICE, AND NEURAL NE...
- Publication number 20250056844
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Hyunjae LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL
- Publication number 20250048681
- Publication date Feb 6, 2025
- Kennametal Inc.
- Tim Guter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLARIZATION ENHANCEMENT STRUCTURE FOR ENLARGING MEMORY WINDOW
- Publication number 20250048682
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH
- Publication number 20250048647
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION
- Publication number 20250031380
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE BASED ON DIELECTRIC MATERIAL CONTAINING METAL...
- Publication number 20250031379
- Publication date Jan 23, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250031400
- Publication date Jan 23, 2025
- TOKYO ELECTRON LIMITED
- Mark I. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volume-Less Dipole Incorporation into CFET Having Common Gate
- Publication number 20250022879
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Jui Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...
- Publication number 20250015184
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Hagyoul BAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250017020
- Publication date Jan 9, 2025
- KIOXIA Corporation
- Yoko YOSHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A METAL OXIDE INTERFACE LAYER AND ME...
- Publication number 20250014945
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250016977
- Publication date Jan 9, 2025
- SK HYNIX INC.
- Jun Sik KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE TOPOLOGICAL QUANTUM FIELD-EFFECT TRANSISTOR
- Publication number 20250006821
- Publication date Jan 2, 2025
- MONASH UNIVERSITY
- Michael Sears Fuhrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...
- Publication number 20250006791
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FEFET DEVICE
- Publication number 20240431116
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Anti-Fuse Device by Ferroelectric Characteristic
- Publication number 20240413078
- Publication date Dec 12, 2024
- NANYA TECHNOLOGY CORPORATION
- YI-JU CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240414925
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seunghee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...
- Publication number 20240405094
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON-FREE LAMINATED HAFNIUM OXIDE/ZIRCONIUM OXIDE FILMS FOR FERRO...
- Publication number 20240395895
- Publication date Nov 28, 2024
- Entegris, Inc.
- Jun-Fei Zheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER
- Publication number 20240397728
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-FERROELECTRIC MEMORY DEVICE
- Publication number 20240397725
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun-Chieh Lu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20240397729
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE DIELECTRIC
- Publication number 20240395896
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM
- Publication number 20240389341
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240389349
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Ting Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...
- Publication number 20240387685
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer, Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240387710
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS

with at least one ferroelectric layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

MOSFET gate engineerinng with dipole films

Electronic device and method of manufacturing the same

Stacked ferroelectric structure

Layer structure including dielectric layer, methods of manufacturin...

Techniques to manufacture ferroelectric memory devices

Semiconductor device and manufacturing method thereof

Complementary metal oxide semiconductor device

Stacked ferroelectric structure

Electronic devices and methods of manufacturing the same

Negative differential resistance device

Gate line plug structures for advanced integrated circuit structure...

Elevationally-extending transistors, devices comprising elevational...

Methods of operating ferroelectric (Fe) FET based non-volatile memo...

Plugs for interconnect lines for advanced integrated circuit struct...

Memory device structure and manufacturing method thereof

Ferroelectric channel field effect transistor

Methods for forming ferroelectric memory devices

Polarization enhancement structure for enlarging memory window

Ferroelectric structure including a ferroelectric film having a fir...

Gate-all-around device with trimmed channel and dipoled dielectric...

Cerium-doped ferroelectric materials and related devices and methods

Field-effect transistor (FET) with self-aligned ferroelectric capac...

FeRAM MFM structure with selective electrode etch

Ferroelectric memory device and method of forming the same

Structures for a ferroelectric field-effect transistor and related...

Memory device with ferroelectric layer

Carrier barrier layer for tuning a threshold voltage of a ferroelec...

Semiconductor device and method

Method of manufacturing semiconductor device including ferroelectri...

Double gate metal-ferroelectric-metal-insulator-semiconductor field...

Patents Applicationslast 30 patents

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

FERROELECTRIC FIELD EFFECT TRANSISTOR, MEMORY DEVICE, AND NEURAL NE...

METHOD FOR PRODUCING A CUTTING TOOL, AND CUTTING TOOL

POLARIZATION ENHANCEMENT STRUCTURE FOR ENLARGING MEMORY WINDOW

FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH

3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION

SEMICONDUCTOR DEVICE BASED ON DIELECTRIC MATERIAL CONTAINING METAL...

FORKSHEET SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Volume-Less Dipole Incorporation into CFET Having Common Gate

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR DEVICE INCLUDING A METAL OXIDE INTERFACE LAYER AND ME...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

NEGATIVE CAPACITANCE TOPOLOGICAL QUANTUM FIELD-EFFECT TRANSISTOR

PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...

FEFET DEVICE

Anti-Fuse Device by Ferroelectric Characteristic

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...

CARBON-FREE LAMINATED HAFNIUM OXIDE/ZIRCONIUM OXIDE FILMS FOR FERRO...

FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER

ANTI-FERROELECTRIC MEMORY DEVICE

MEMORY DEVICE AND FORMING METHOD THEREOF

HIGH-K GATE DIELECTRIC

COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM

MEMORY DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME