with at least one ferroelectric layer

Industry

CPC
H01L29/516

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/516with at least one ferroelectric layer

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cerium-doped ferroelectric materials and related devices and methods
- Patent number 12,166,098
- Issue date Dec 10, 2024
- The Board of Trustees of the Leland Stanford Junior University
- Paul C. McIntyre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM MFM structure with selective electrode etch
- Patent number 12,167,611
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hsiang Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 12,167,607
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for a ferroelectric field-effect transistor and related...
- Patent number 12,159,935
- Issue date Dec 3, 2024
- GlobalFoundries Dresden Module One Limited Liability Company & KG
- Halid Mulaosmanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with ferroelectric layer
- Patent number 12,160,994
- Issue date Dec 3, 2024
- Kioxia Corporation
- Tsunehiro Ino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carrier barrier layer for tuning a threshold voltage of a ferroelec...
- Patent number 12,154,965
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,154,986
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including ferroelectri...
- Patent number 12,148,829
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wilman Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate metal-ferroelectric-metal-insulator-semiconductor field...
- Patent number 12,150,309
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random-access memory cell
- Patent number 12,150,310
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,136,659
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 12,133,392
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,133,393
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Do Young Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor device and method of extracting defect...
- Patent number 12,132,109
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Hagyoul Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with anti-ferroelectric...
- Patent number 12,125,893
- Issue date Oct 22, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device including a ferroelectric semiconductor channel and m...
- Patent number 12,127,410
- Issue date Oct 22, 2024
- SanDisk Technologies LLC
- Peter Rabkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cocktail layer over gate dielectric layer of FET FeRAM
- Patent number 12,127,411
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neural network operation device
- Patent number 12,124,945
- Issue date Oct 22, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Ferroelectric tunnel junction memory device using a magnesium oxide...
- Patent number 12,120,885
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,120,866
- Issue date Oct 15, 2024
- SK Hynix Inc.
- Jun Sik Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device using a ferroelectric characteristic of...
- Patent number 12,120,883
- Issue date Oct 15, 2024
- Samsung Electronics Co., Ltd.
- Sang-Yong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with ferroelectric gate...
- Patent number 12,113,117
- Issue date Oct 8, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, array structure of semiconductor devices, neu...
- Patent number 12,113,129
- Issue date Oct 8, 2024
- Samsung Electronics Co., Ltd.
- Jaechul Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping layer over FET FeRAM to increase charge mobility
- Patent number 12,114,507
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film structure and semiconductor device including the same
- Patent number 12,107,140
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Jinseong Heo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,139
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Guk Il An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device having a ferroelectric g...
- Patent number 12,107,128
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Anti-Fuse Device by Ferroelectric Characteristic
- Publication number 20240413078
- Publication date Dec 12, 2024
- NANYA TECHNOLOGY CORPORATION
- YI-JU CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240414925
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seunghee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...
- Publication number 20240405094
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON-FREE LAMINATED HAFNIUM OXIDE/ZIRCONIUM OXIDE FILMS FOR FERRO...
- Publication number 20240395895
- Publication date Nov 28, 2024
- Entegris, Inc.
- Jun-Fei Zheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ANTI-FERROELECTRIC MEMORY DEVICE
- Publication number 20240397725
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun-Chieh Lu
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER
- Publication number 20240397728
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20240397729
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE DIELECTRIC
- Publication number 20240395896
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM
- Publication number 20240389341
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240389349
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Ting Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...
- Publication number 20240387685
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer, Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240387710
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387728
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL REAWAKENING OPERATION METHOD AND SYSTEM FOR ENHANCING POLAR...
- Publication number 20240389461
- Publication date Nov 21, 2024
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Xingsheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION WITH IMPROVED FERROELECTRIC RESPONSE...
- Publication number 20240389340
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Chen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array Isolation Structures
- Publication number 20240379778
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Chang Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAYS WITH LEAKERS
- Publication number 20240381661
- Publication date Nov 14, 2024
- Micron Technology, Inc.
- Riccardo Pazzocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array Channel Regions
- Publication number 20240379847
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Chang Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240381659
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- PO-TING LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379848
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wilman TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DATA BACKUP UNIT FOR STATIC RANDOM-ACCESS MEMORY DEVICE
- Publication number 20240381613
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION STRUCTURE WITH L-SHAPED SPACERS
- Publication number 20240381658
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, CAPACITIVE MEMORY STRUCTURE, AND METHODS THEREOF
- Publication number 20240381660
- Publication date Nov 14, 2024
- Ferroelectric Memory GmbH
- Stefan Ferdinand MUELLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY
- Publication number 20240373641
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...
- Publication number 20240373642
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...
- Publication number 20240365560
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE WITH OXYGEN BARRIER AND METHODS FOR MANUFACTURING TH...
- Publication number 20240355899
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shen-Yang LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MEMORY DEVICE
- Publication number 20240357826
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240357801
- Publication date Oct 24, 2024
- Samsung Electronics Co., Ltd.
- Hanjin Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240357831
- Publication date Oct 24, 2024
- Samsung Electronics Co., Ltd.
- Seryeun Yang
- H01 - BASIC ELECTRIC ELEMENTS

with at least one ferroelectric layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gate-all-around device with trimmed channel and dipoled dielectric...

Cerium-doped ferroelectric materials and related devices and methods

Field-effect transistor (FET) with self-aligned ferroelectric capac...

FeRAM MFM structure with selective electrode etch

Ferroelectric memory device and method of forming the same

Structures for a ferroelectric field-effect transistor and related...

Memory device with ferroelectric layer

Carrier barrier layer for tuning a threshold voltage of a ferroelec...

Semiconductor device and method

Method of manufacturing semiconductor device including ferroelectri...

Double gate metal-ferroelectric-metal-insulator-semiconductor field...

Ferroelectric random-access memory cell

Contact over active gate structures for advanced integrated circuit...

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Memory device and forming method thereof

Method of manufacturing semiconductor device

Ferroelectric semiconductor device and method of extracting defect...

Piezo-resistive transistor based resonator with anti-ferroelectric...

Memory device including a ferroelectric semiconductor channel and m...

Cocktail layer over gate dielectric layer of FET FeRAM

Neural network operation device

Ferroelectric tunnel junction memory device using a magnesium oxide...

Semiconductor device and method for fabricating the same

Semiconductor memory device using a ferroelectric characteristic of...

Piezo-resistive transistor based resonator with ferroelectric gate...

Semiconductor device, array structure of semiconductor devices, neu...

Capping layer over FET FeRAM to increase charge mobility

Thin film structure and semiconductor device including the same

Semiconductor device

Method of producing a semiconductor device having a ferroelectric g...

Patents Applicationslast 30 patents

Anti-Fuse Device by Ferroelectric Characteristic

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...

CARBON-FREE LAMINATED HAFNIUM OXIDE/ZIRCONIUM OXIDE FILMS FOR FERRO...

ANTI-FERROELECTRIC MEMORY DEVICE

FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER

MEMORY DEVICE AND FORMING METHOD THEREOF

HIGH-K GATE DIELECTRIC

COCKTAIL LAYER OVER GATE DIELECTRIC LAYER OF FET FERAM

MEMORY DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

CARRIER BARRIER LAYER FOR TUNING A THRESHOLD VOLTAGE OF A FERROELEC...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD

THERMAL REAWAKENING OPERATION METHOD AND SYSTEM FOR ENHANCING POLAR...

FERROELECTRIC TUNNEL JUNCTION WITH IMPROVED FERROELECTRIC RESPONSE...

Memory Array Isolation Structures

MEMORY ARRAYS WITH LEAKERS

Memory Array Channel Regions

SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

DATA BACKUP UNIT FOR STATIC RANDOM-ACCESS MEMORY DEVICE

FERROELECTRIC TUNNEL JUNCTION STRUCTURE WITH L-SHAPED SPACERS

MEMORY CELL, CAPACITIVE MEMORY STRUCTURE, AND METHODS THEREOF

CAPPING LAYER OVER FET FERAM TO INCREASE CHARGE MOBILITY

DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD...

FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...

GATE STRUCTURE WITH OXYGEN BARRIER AND METHODS FOR MANUFACTURING TH...

METHOD OF FORMING MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME