Claims
- 1. A semiconductor device which is coated with a fluorine-containing polyimide of the formula: ##STR87## wherein R.sup.1 is selected from the group consisting of ##STR88## wherein R.sup.3 is --O--, --CO--, --SO.sub.2, --C(CH.sub.3).sub.2 --, --C(CH.sub.3).sub.2 --, ##STR89## wherein R.sup.4 is --C.sub.6 H.sub.4 --, --C.sub.6 H.sub.4 O--C.sub.6 H.sub.4 -- or --C.sub.6 H.sub.4 --O--C.sub.6 H.sub.4 --O--C.sub.6 H.sub.4 -- and ##STR90## wherein R.sup.5 is --O--, --O--(CH.sub.2).sub.4 --O--, --O--(CH.sub.2).sub.6 --O--, ##STR91## R.sup.2 is selected from the group consisting of ##STR92## wherein R.sup.6 is --O--, --CO--, --S--, --CH.sub.2 --, --C(CH.sub.3).sub.2, --C(CF.sub.3).sub.2 --, ##STR93## or --SI(CH.sub.3).sub.2 --, and ##STR94## wherein R.sup.7 is --O--, --SO.sub.2 --, --CH.sub.2 --, --CO--, --C(CH.sub.3).sub.2 -- or --S--, with the proviso that when R.sup.1 is group (i), R.sup.2 is group (ii), and with the further proviso that at least one of R.sup.1 and R.sup.2 contains a group of the formula: ##STR95## wherein X is ##STR96## in which R.sub.f is a perfluoroalkyl group having 1 to 10 carbon atoms, R.sub.f ' is a perfluoroalkyl group having 1 to 12 carbon atoms, p is an integer of 1 to 3, q is an integer of 0 to 3, r is 0 or 1, s is an integer of 0 to 5 and t is an integer of 0 to 5, and
- Y is X, a hydrogen atoms, an alkyl group having 1 to 8 carbon atoms or a fluoroalkyl group having 1 to 8 carbon atoms, and
- n is an integer not less than 10.
- 2. The semiconductor device according to claim 1, wherein the fluorine-containing polyimide is of the formula: ##STR97## wherein X is ##STR98## in which R.sub.f is a perfluoroalkyl group having 1 to 10 carbon atoms, R.sub.f ' is a perfluoroalkyl group having 1 to 12 carbon atonms, p is an integer of 1 to 3, q is an integer of 0 to 3, r is 0 or 1, s is an integer of 0 to 5 and t is an integer of 0 to 5,
- Y is X, a hydrogen atom, an alkyl group having 1 to 8 carbon atoms or a fluoroalkyl group having 1 to 8 carbon atoms, and
- n is an integer not less than 10.
- 3. The semiconductor device according to claim 1, wherein the fluorine-containing polyimide is of the formula: ##STR99## wherein R.sup.1 is as defined in claim 1, X is ##STR100## in which R.sub.f is a perfluoroalkyl group having 1 to 10 carbon atoms, R.sub.f ' is a perfluoroalkyl group having 1 to 12 carbon atoms, p is an integer of 1 to 3, q is an integer of 0 to 3, r is 0 to 1, s is an integer of 0 to 5 and t is an integer of 0 to 5,
- Y is X, a hydrogen atom, an alkyl group having 1 to 8 carbon atoms or a fluoroalkyl group having 1 to 8 carbon atoms, and
- n is an integer not less than 10.
- 4. The semiconductor device according to claim 1, wherein the fluorine-containing polyimide is of the formula: ##STR101## wherein R.sup.2 is as defined in claim 19, X is ##STR102## in which R.sub.f is a perfluoroalkyl group having 1 to 10 carbon atoms, R.sub.f ' is a perfluoroalkyl group having 1 to 12 carbon atoms, p is an integer of 1 to 3, q is an integer of 0 to 3, r is 0 to 1, s is an integer of 0 to 5 and t is an integer of 0 to 5,
- Y is X, a hydrogen atom, an alkyl group having 1 to 8 carbon atoms or a fluoroalkyl group having 1 to 8 carbon atoms, and
- n is an integer not less than 10.
- 5. A process for preparing a semiconductor device which comprises coating a polyamic acid of the formula: ##STR103## on a semiconductor element and lead wires and thermally curing the polyamic acid so that a resultant polyimide adheres to the semiconductor element and lead wires, wherein R.sup.1 is a residue which is formed by removing four carboxylic acid groups from an aromatic tetracarboxylic acid,
- R.sup.2 is a residue which is formed by removing two amino groups from an aromatic diamine, with the proviso that at least one of R.sup.1 and R.sup.2 contains a group of the formula: ##STR104## wherein X is ##STR105## in which R.sub.f is a perfluoroalkyl group having 1 to 10 carbon atoms, R.sub.f ' is a perfluoroalkyl group having 1 to 12 carbon atoms, p is an integer of 1 to 3, q is an integer of 0 to 3, r is 0 to 1, s is an integer of 0 to 5 and t is an integer of 0 to 5, and
- Y is X, a hydrogen atom, an alkyl group having 1 to 8 carbon atoms or a fluoroalkyl group having 1 to 8 carbon atoms, and
- n is an integer not less than 2.
Priority Claims (4)
Number |
Date |
Country |
Kind |
62-82592 |
Apr 1987 |
JPX |
|
62-97013 |
Apr 1987 |
JPX |
|
62-191323 |
Jul 1987 |
JPX |
|
63-4500 |
Jan 1988 |
JPX |
|
Parent Case Info
This application is a divisional of copending application Ser. No. 07/521,449 , filed on May 10, 1990, now U.S. Pat. No. 5,166,365, which is a divisional of application Ser. No. 07/177,446 filed Apr. 4, 1988, now U.S. Pat. No. 4,946,935 the entire contents of which are hereby incorporated by reference.
US Referenced Citations (8)
Divisions (2)
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Number |
Date |
Country |
Parent |
521449 |
May 1990 |
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Parent |
177446 |
Apr 1988 |
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