Claims
- 1. A method of fabricating a semiconductor device, comprising the steps of:forming an amorphous silicon film on a substrate; heat treating said amorphous silicon film by laser annealing, therein forming a polycrystalline silicon film; forming an impurity region in said polycrystalline silicon film; and rapidly heat treating said impurity region by rapid thermal annealing using a light source emitting sheet-type annealing light, therein activating said impurity region, wherein said light source is composed of a lamp and a reflecting mirror covering the lamp for emitting sheet-type annealing light.
- 2. The method of fabricating a semiconductor device in accordance with claim 1, wherein said impurity region is rapidly heat treated for three seconds or less.
- 3. The method of fabricating a semiconductor device in accordance with claim 1, further comprising a step of forming an insulating film of 1000 to 6000 Å in thickness on said substrate and forming said amorphous silicon film on said insulating film.
- 4. The method of fabricating a semiconductor device in accordance with claim 1, wherein a xenon arc lamp is employed in said light source.
- 5. The method of fabricating a semiconductor device in accordance with claim 1, wherein said rapidly heat treating step comprises a step of preparing said light source by arranging a pair of lamps vertically opposed to each other, and carrying said substrate so as to pass between said pair of lamps.
- 6. The method of fabricating a semiconductor device in accordance with claim 1, wherein said rapid thermal annealing is performed a plurality of times.
- 7. The method of fabricating a semiconductor device in accordance with claim 1, wherein the heating temperature is increased stepwise from an initial time to a final time.
- 8. A method of fabricating a semiconductor device, comprising the steps of:forming an amorphous silicon film on a substrate; heat treating said amorphous silicon film by laser annealing, therein forming a polycrystalline silicon film; forming an impurity region in said polycrystalline silicon film; and rapidly heat treating said impurity region by rapid thermal annealing using a light source emitting sheet-type annealing light, therein activating said impurity region, wherein said light source is composed of a lamp and a reflecting mirror for reflecting the light from the lamp so as to emit sheet-type annealing light.
- 9. The method of fabricating a semiconductor device in accordance with claim 8, further comprising a step of forming an insulating film of 1000 to 6000 Å in thickness on said substrate and forming said amorphous silicon film on said insulating film.
- 10. The method of fabricating a semiconductor device in accordance with claim 8, wherein a xenon arc lamp is employed in said light source.
- 11. The method of fabricating a semiconductor device in accordance with claim 8, wherein said rapidly heat treating step comprises a step of preparing said light source by arranging a pair of lamps vertically opposed to each other, and carrying said substrate so as to pass between said pair of lamps.
- 12. The method of fabricating a semiconductor device in accordance with claim 8, wherein said rapid thermal annealing is performed a plurality of times.
- 13. The method of fabricating a semiconductor device in accordance with claim 8, wherein the heating temperature is increased stepwise from an initial time to a final time.
- 14. The method of fabricating a semiconductor device in accordance with claim 8, wherein said impurity region is rapidly heat treated for three seconds or less.
- 15. A method of fabricating a semiconductor device, comprising the steps of:forming an amorphous silicon film on a substrate; heat treating said amorphous silicon film by laser annealing performed by applying a laser beam in the form of a sheet, therein forming a polycrystalline silicon film; forming an impurity region in said polycrystalline silicon film; and rapidly heat treating said impurity region by rapid thermal annealing using a light source emitting sheet-type annealing light, therein activating said impurity region, wherein said light source is composed of a lamp and a reflecting mirror, covering the lamp for emitting sheet-type annealing light.
- 16. A method of fabricating a semiconductor device, comprising the steps of:forming an amorphous silicon film on a substrate; heat treating said amorphous silicon film by laser annealing performed by applying a laser beam in the form of a sheet, therein forming a polycrystalline silicon film; forming an impurity region in said polycrystalline silicon film; and rapidly heat treating said impurity region by rapid thermal annealing using a light source emitting sheet-type annealing light, therein activating said impurity region, wherein said light source is composed of a lamp and a reflecting mirror for reflecting the light from the lamp so as to emit sheet-type annealing light.
Priority Claims (5)
Number |
Date |
Country |
Kind |
167513 |
Jul 1995 |
JP |
|
199979 |
Aug 1995 |
JP |
|
199980 |
Aug 1995 |
JP |
|
199981 |
Aug 1995 |
JP |
|
199982 |
Aug 1995 |
JP |
|
Parent Case Info
This application is a Divisional application of U.S. Ser. No. 09/056,604, filed Apr. 8, 1998, now U.S. Pat. No. 6,500,704 which is a divisional application of U.S. Ser. No. 08/677,742 filed Jul. 2, 1996 now U.S. Pat. No. 5,771,110.
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