Number | Date | Country | Kind |
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60-244433 | Oct 1985 | JPX |
Number | Date | Country |
---|---|---|
2496342 | Jun 1982 | FRX |
2520556 | Jul 1983 | FRX |
57-27069 | Feb 1982 | JPX |
Entry |
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IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb., 1985, pp. 253-257; "Characteristics of MOSFET Prepared on Si/MgO.Al.sub.2 O.sub.3 /SiO.sub.2 /Si Structure". |