MOSFET substrate bias

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CPC
Y10S257/901

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S257/00Active solid-state devices

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Y10S257/901MOSFET substrate bias

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,551,849
- Issue date Oct 8, 2013
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device
- Patent number 8,274,095
- Issue date Sep 25, 2012
- Mitsubishi Electric Corporation
- Yoshiaki Hisamoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Bipolar semiconductor device and manufacturing method
- Patent number 8,222,681
- Issue date Jul 17, 2012
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device including semiconductor zones and manufacturin...
- Patent number 8,183,666
- Issue date May 22, 2012
- Infineon Technologies AG
- Hans-Joachim Schulze
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,134,189
- Issue date Mar 13, 2012
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Vertical type power semiconductor device having a super junction st...
- Patent number 8,125,023
- Issue date Feb 28, 2012
- Kabushiki Kaisha Toshiba
- Hiroshi Ohta
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Bipolar semiconductor device and manufacturing method
- Patent number 8,120,074
- Issue date Feb 21, 2012
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device with increased withstand voltage
- Patent number 8,017,974
- Issue date Sep 13, 2011
- Mitsubishi Electric Corporation
- Yoshiaki Hisamoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fractional biasing of semiconductors
- Patent number 7,705,350
- Issue date Apr 27, 2010
- David Kuei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a structure suitable for miniaturization
- Patent number 7,560,757
- Issue date Jul 14, 2009
- Kabushiki Kaisha Toshiba
- Masato Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM memory device with flash clear and corresponding flash clear m...
- Patent number 7,333,380
- Issue date Feb 19, 2008
- STMicroelectronics S.A.
- Jean-Pierre Schoellkopf
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor module and DC-DC converter
- Patent number 7,259,459
- Issue date Aug 21, 2007
- Kabushiki Kaisha Toshiba
- Mitsuhiro Kameda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOS transistor having capability for setting substrate potent...
- Patent number 7,109,558
- Issue date Sep 19, 2006
- Denso Corporation
- Takashi Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fractional biasing of semiconductors
- Patent number 6,943,614
- Issue date Sep 13, 2005
- Transmeta Corporation
- David Kuei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage stabilizer, method of manufacturing and integrate...
- Patent number 6,885,054
- Issue date Apr 26, 2005
- Texas Instruments Incorporated
- Xiaoju Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor module
- Patent number 6,867,494
- Issue date Mar 15, 2005
- Kabushiki Kaisha Toshiba
- Mitsuhiro Kameda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device having body biasing circuit...
- Patent number 6,864,539
- Issue date Mar 8, 2005
- Semiconductor Technology Academic Research Center
- Koichiro Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for weak inversion mode MOS decoupling capacitor
- Patent number 6,849,909
- Issue date Feb 1, 2005
- Intel Corporation
- Rajendran Nair
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with a reprogrammable nonvolatile switch having...
- Patent number 6,809,425
- Issue date Oct 26, 2004
- Silicon Storage Technology, Inc.
- Bomy Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic threshold voltage metal insulator field effect transistor
- Patent number 6,794,720
- Issue date Sep 21, 2004
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TFT with a negative substrate bias that decreases in time
- Patent number 6,713,804
- Issue date Mar 30, 2004
- Renesas Technology Corp.
- Yuuichi Hirano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device formed in a semiconductor layer provided on an...
- Patent number 6,693,328
- Issue date Feb 17, 2004
- Kabushiki Kaisha Toshiba
- Shigeru Kawanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pair of FETs including a shared SOI body contact and the method of...
- Patent number 6,613,615
- Issue date Sep 2, 2003
- International Business Machines Corporation
- Jack A. Mandelman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic threshold voltage metal insulator semiconductor effect tran...
- Patent number 6,465,823
- Issue date Oct 15, 2002
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer including both bulk and SOI regions and method for fo...
- Patent number 6,465,852
- Issue date Oct 15, 2002
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Commonly housed diverse semiconductor
- Patent number 6,404,050
- Issue date Jun 11, 2002
- International Rectifier Corporation
- Christopher Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Water flow timer
- Patent number 6,398,185
- Issue date Jun 4, 2002
- Hsin-Fa Wang
- G05 - CONTROLLING REGULATING
Information Patent Grant
CMOS semiconductor device
- Patent number 6,373,321
- Issue date Apr 16, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Tadaaki Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pair of FETs including a shared SOI body contact and the method of...
- Patent number 6,344,671
- Issue date Feb 5, 2002
- International Business Machines Corporation
- Jack A. Mandelman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS structure with via grounded source
- Patent number 6,297,533
- Issue date Oct 2, 2001
- The Whitaker Corporation
- Aram Mkhitarian
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120135574
- Publication date May 31, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20120098030
- Publication date Apr 26, 2012
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110227128
- Publication date Sep 22, 2011
- MITSUBISHI ELECTRIC CORPORATION
- Yoshiaki HISAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR ZONES AND MANUFACTURIN...
- Publication number 20110101501
- Publication date May 5, 2011
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20110101416
- Publication date May 5, 2011
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20100123186
- Publication date May 20, 2010
- Kabushiki Kaisha Toshiba
- Hiroshi Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090184338
- Publication date Jul 23, 2009
- MITSUBISHI ELECTRIC CORPORATION
- Yoshiaki HISAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090090941
- Publication date Apr 9, 2009
- Fujitsu Microelectronics Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20060278933
- Publication date Dec 14, 2006
- Masato Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM memory device with flash clear and corresponding flash clear m...
- Publication number 20060233015
- Publication date Oct 19, 2006
- STMicroelectronics S.A.
- Jean-Pierre Schoellkopf
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor module
- Publication number 20050029617
- Publication date Feb 10, 2005
- Mitsuhiro Kameda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor module
- Publication number 20040026744
- Publication date Feb 12, 2004
- Mitsuhiro Kameda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device having body biasing circuit...
- Publication number 20040014268
- Publication date Jan 22, 2004
- SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER
- Koichiro Ishibashi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device
- Publication number 20030042543
- Publication date Mar 6, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Yuuichi Hirano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOS transistor having capability for setting substrate potent...
- Publication number 20020185681
- Publication date Dec 12, 2002
- Takashi Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020179970
- Publication date Dec 5, 2002
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WATER FLOW TIMER
- Publication number 20020066878
- Publication date Jun 6, 2002
- Hsin-Fa Wang
- G05 - CONTROLLING REGULATING
Information Patent Application
Pair of FETs including a shared SOI body contact and the method of...
- Publication number 20020020877
- Publication date Feb 21, 2002
- Jack A. Mandelman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Commonly housed diverse semiconductor
- Publication number 20020008319
- Publication date Jan 24, 2002
- International Rectifier Corporation
- Christopher Davis
- H01 - BASIC ELECTRIC ELEMENTS

MOSFET substrate bias

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device

Bipolar semiconductor device and manufacturing method

Semiconductor device including semiconductor zones and manufacturin...

Semiconductor device and method of manufacturing the same

Vertical type power semiconductor device having a super junction st...

Bipolar semiconductor device and manufacturing method

Semiconductor device with increased withstand voltage

Fractional biasing of semiconductors

Semiconductor device with a structure suitable for miniaturization

SRAM memory device with flash clear and corresponding flash clear m...

Semiconductor module and DC-DC converter

Power MOS transistor having capability for setting substrate potent...

Fractional biasing of semiconductors

Threshold voltage stabilizer, method of manufacturing and integrate...

Semiconductor module

Semiconductor integrated circuit device having body biasing circuit...

Method and apparatus for weak inversion mode MOS decoupling capacitor

Integrated circuit with a reprogrammable nonvolatile switch having...

Dynamic threshold voltage metal insulator field effect transistor

TFT with a negative substrate bias that decreases in time

Semiconductor device formed in a semiconductor layer provided on an...

Pair of FETs including a shared SOI body contact and the method of...

Dynamic threshold voltage metal insulator semiconductor effect tran...

Silicon wafer including both bulk and SOI regions and method for fo...

Commonly housed diverse semiconductor

Water flow timer

CMOS semiconductor device

Pair of FETs including a shared SOI body contact and the method of...

LDMOS structure with via grounded source

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR ZONES AND MANUFACTURIN...

BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor device and manufacturing method thereof

SRAM memory device with flash clear and corresponding flash clear m...

Semiconductor module

Semiconductor module

Semiconductor integrated circuit device having body biasing circuit...

Semiconductor device

Power MOS transistor having capability for setting substrate potent...

Semiconductor device and method of manufacturing the same

WATER FLOW TIMER

Pair of FETs including a shared SOI body contact and the method of...

Commonly housed diverse semiconductor