In a semiconductor device such as a DRAM (Dynamic Random Access Memory), concentration of access on the same word line may cause deterioration of information retention characteristics of memory cells connected to an adjacent word line. Therefore, in some cases, a refresh operation of the memory cells is performed in addition to a normal refresh operation to prevent information of the memory cells connected to the adjacent word line from being lost. This additional refresh operation is called “row hammer refreshing operation”.
The row hammer refresh operation is performed on word lines adjacent to word lines at which accesses are concentrated. In order to realize this operation, addresses of a plurality of word lines at which accesses are concentrated are stored in an address storing circuit and one of the addresses is read from the address storing circuit at a time of the row hammer refresh operation. However, when the row hammer refresh operation is to be performed, which one of the addresses stored in the address storing circuit is to be read is the issue to be handled.
Various embodiments of the present invention will be explained below in detail with reference to the accompanying drawings. The following detailed description refers to the accompanying drawings that show, by way of illustration, specific aspects and embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the present invention. Other embodiments may be utilized, and structural, logical and electrical changes may be made without departing from the scope of the present invention. The various embodiments disclosed herein are not necessary mutually exclusive, as some disclosed embodiments can be combined with one or more other disclosed embodiments to form new embodiments.
A plurality of external terminals included in the semiconductor device 10 include command address terminals 21, clock terminals 22, data terminals 23, and power-supply terminals 24 and 25. The data terminals 23 are connected to an I/O circuit 16.
A command address signal CA is supplied to the command address terminals 21. One of the command address signals CA supplied to the command address terminals 21, which relates to an address, is transferred to an address decoder 32 via a command address input circuit 31. Another one that relates to a command is transferred to a command control circuit 33 via the command address input circuit 31. The address decoder 32 decodes an address signal and generates a row address XADD and a column address YADD. The row address XADD is supplied to the row address control circuit 12, and the column address YADD is supplied to the column decoder 13. Further, a command address signal CA that functions as a clock enable signal CKE is supplied to an internal clock generator 35.
Complementary external clock signals CK and /CK are supplied to the clock terminals 22. The complementary external clock signals CK and /CK are input to a clock input circuit 34. The clock input circuit 34 generates an internal clock signal ICLK based on the complementary external clock signals CK and /CK. The internal clock signal ICLK is supplied to at least the command control circuit 33 and the internal clock generator 35. The internal clock generator 35 is activated by the clock enable signal CKE, for example, and generates an internal clock signal LCLK based on the internal clock signal ICLK. The internal clock signal LCLK is supplied to the I/O circuit 16. The internal clock signal LCLK is used as a timing signal that defines a timing at which read data DQ is output from the data terminal 23 at the time of a read operation. In a write operation, write data is input to the data terminal 23 from outside. In the write operation, a data mask signal DM may be input to the data terminal 23 from outside.
Power-supply potentials VDD and VSS are supplied to the power-supply terminals 24. These power-supply potentials VDD and VSS are supplied to a voltage generator 36. The voltage generator 36 generates various internal potentials VPP, VOD, VARY, and VPERI, for example, based on the power-supply potentials VDD and VSS. The internal potential VPP is used mainly in the row address control circuit 12. The internal potentials VOD and VARY are used mainly in the sense amplifier 14 included in the memory cell array 11. The internal potential VPERI is used in many other circuit blocks.
Power-supply potentials VDDQ and VSSQ are supplied to the I/O circuit 16 from the power-supply terminals 25. Although the power-supply potentials VDDQ and VSSQ may be the same potentials as the power-supply potentials VDD and VSS supplied to the power supply terminals 24, respectively, the dedicated power-supply potentials VDDQ and VSSQ are assigned to the I/O circuit 16 in order to prevent propagation of power-supply noise generated in the I/O circuit 16 to another circuit block.
The command control circuit 33 activates an active signal ACT when an active command is issued, and activates a refresh signal AREF when a refresh command is issued. The active signal ACT and the refresh signal AREF are both supplied to the row address control circuit 12. The row address control circuit 12 includes a refresh control circuit 40. The refresh control circuit 40 controls a refresh operation for the memory cell array 11 based on the row address XADD, the active signal ACT, and the refresh signal AREF. The refresh control circuit 40 will be described in detail later.
When a read command is issued from outside, following the active command, the command control circuit 33 activates a column selection signal CYE. The column selection signal CYE is supplied to the column decoder 13. In response to this signal, read data is read out from the memory cell array 11. The read data read from the memory cell array 11 is transferred to the I/O circuit 16 via a read-write amplifier 17 and an FIFO circuit 18, and is output to outside via the data terminals 23.
As shown in
The row hammer refresh addresses +1ADD and −1ADD are addresses of word lines WL adjacent to the word line WL having the row address VADD assigned thereto on the both sides. The row hammer refresh addresses +2ADD and −2ADD are addresses of word lines WL two lines away from the word line WL having the row address VADD assigned thereto on the both sides. For example, when word lines WL1 to WL5 are arranged in this order as shown in
The refresh control circuit 40 further includes a counter circuit 47, a comparing circuit 48, and a refresh state circuit 49. The counter circuit 47 increments or decrements a count value CV in response to the internal refresh signal IREF. The comparing circuit 48 receives the count value CV and activates a refresh state signal RHR State each time the count value CV reaches a predetermined value. The predetermined value can be changed with a mode signal MODE. Therefore, it suffices to set the predetermined value to a small value with the mode signal MODE when the frequency of the row hammer refresh operations is to be increased, and set the predetermined value to a large value with the mode signal MODE when the frequency of the row hammer refresh operations is to be decreased. The refresh counter 41 may temporarily stop an update operation of the normal refresh address NRADD when the refresh stale signal RHR State is activated.
The refresh state signal RHR State is supplied to the refresh state circuit 49. The refresh state circuit 49 generates refresh selection signals NR, RHR1, and RHR2 on the basis of the internal refresh signal IREF and the refresh state signal RHR State.
The refresh state circuit 49 activates the refresh selection signal NR when the refresh state signal RHR State is in an inactive state. The refresh selection signal NR is a signal activated when the normal refresh operation is to be performed. In a case where the refresh selection signal NR is activated, the refresh address selector 46 selects the normal refresh address NRADD output from the refresh counter 41 and outputs the normal refresh address NRADD as a refresh address REFADD. When the refresh state signal RHR State is in an active state, the refresh state circuit 49 activates the refresh selection signal RHR1 or RHR2. The refresh selection signal RHR1 is a signal activated when the row hammer refresh operation is to be performed on the word lines WL2 and WL4 adjacent to the word line WL3 at which accesses are concentrated. In a case where the refresh selection signal RHR1 is activated, the refresh address selector 46 selects the row hammer refresh addresses +1ADD and −1ADD output from the address convertor 45 and outputs the row hammer refresh addresses +1ADD and −1ADD as the refresh addresses REFADD. The refresh selection signal RHR1 is supplied also to the row hammer address storing circuit 44. The refresh selection signal RHR2 is a signal activated when the row hammer refresh operation is to be performed on the word lines WL1 and WL5 two lines away from the word lines WL3 at which accesses are concentrated. In a case where the refresh selection signal RHR2 is activated, the refresh address selector 46 selects the row hammer refresh addresses +2ADD and −2ADD output from the address convertor 45 and outputs the row hammer refresh addresses +2ADD and −2ADD as the refresh addresses REFADD.
As shown in
The comparing circuit 70 compares the input row address XADD with each of the row addresses XADD stored in the address registers 50 to 57. When the input row address XADD matches with any of the row addresses XADD stored in the address registers 50 to 57, the comparing circuit 70 activates a corresponding one of hit signals HIT0 to HIT7. When any of the hit signals HIT0 to HIT7 is activated, the control circuit 80 increments the count value of a corresponding one of the counter circuits 60 to 67. Therefore, the count values of the counter circuits 60 to 67 indicate the numbers of times when the row addresses XADD stored in the address registers 50 to 57 are sampled by the sampling circuit 43, respectively. The control circuit 80 includes a minimum pointer 81 that indicates one of the counter circuits 60 to 67 having a smallest count value, and a maximum pointer 82 that indicates one of the counter circuits 60 to 67 having a greatest count value.
On the other hand, when none of the hit signals HIT0 to HIT7 is activated, that is, when the input row address XADD does not match with any of the row addresses XADD respectively stored in the address registers 50 to 57, the control circuit 80 resets one of the counter circuits 60 to 67 indicated by the minimum pointer 81 to an initial value and supplies a point number MIN to the address registers 50 to 57. Accordingly, the input row address XADD is overwritten in one of the address registers 50 to 57 indicated by the point value MIN. In this way, when the input row address XADD does not match with any of the row addresses XADD respectively stored in the address registers 50 to 57, the value of one of the address registers 50 to 57 storing the row address XADD that is least frequently accessed is overwritten.
One of the row addresses XADD stored in the address registers 50 to 57 is output as the row address VADD in response to the refresh selection signal RHR1. The control circuit 80 further includes a sequential counter 83. When the refresh selection signal RHR1 is activated, either a point value MAX indicated by the maximum pointer 82 or a point value SEQ indicated by the sequential counter 83 is selected. One of the address registers 50 to 57 is selected by a selected point value SEL and the row address XADD stored in the selected one of the address registers 50 to 57 is output as the row address VADD. The value of one of the counter circuits 60 to 67 corresponding to the selected point value SEL is reset to an initial value.
As shown in
The point value MAX and the point value SEQ are compared with each other by the comparing circuit 86. When the point value MAX and the point value SEQ match with each other, the comparing circuit 86 activates a skip signal SKIP. The sequential counter 83 performs a count-up operation in response to the skip signal SKIP and the selection signal M/S.
In the example shown in
When the point value MAX and the point value SEQ match with each other, the comparing circuit 86 activates the skip signal SKIP. In the example shown in
Meanwhile, even when the point value MAX and the point value SEQ match with each other, the point value SEQ of the sequential counter 83 is not skipped if the point value MAX is selected next. For example, although the point value MAX and the point value SEQ both indicate a value “2” at the time t15, the count signal UP is not activated because the selection signal M/S is at a high level at this timing. That is, the point value SEQ is kept at the value “2” and any unnecessary skip operation is not performed.
As explained above, in the present embodiment, the point value SEQ is skipped when the point value MAX and the point value SEQ match with each other. Therefore, the value of the point value SEL generated in response to the previous point value MAX and the value of the point value SEL generated in response to the current point value SEQ do not match with each other and any unnecessary row hammer refresh operation can be avoided.
In the present embodiment, the refresh operation may be performed plural times in the semiconductor device 10 in response to one refresh command issued from outside. In
In the example shown in
In the example shown in
In the example shown in
The sequential counter 83 does not need to be a counter circuit that simply increments the point value SEQ, and can be a linear feedback shift register (LFSR) circuit that generates a pseudorandom number.
Although this invention has been disclosed in the context of certain preferred embodiments and examples, it will be understood by those skilled in the art that the inventions extend beyond the specifically disclosed embodiments to other alternative embodiments and/or uses of the inventions and obvious modifications and equivalents thereof. In addition, other modifications which are within the scope of this invention will be readily apparent to those of skill in the art based on this disclosure. It is also contemplated that various combination or sub-combination of the specific features and aspects of the embodiments may be made and still fall within the scope of the inventions. It should be understood that various features and aspects of the disclosed embodiments can be combined with or substituted for one another in order to form varying modes of the disclosed invention. Thus, it is intended that the scope of at least some of the present invention herein disclosed should not be limited by the particular disclosed embodiments described above.
This application is a divisional of U.S. patent application Ser. No. 16/358,587 filed Mar. 19, 2019 and issued as U.S. Pat. No. 11,043,254 on Jun. 22, 2021. The aforementioned application, and issued patent, is incorporated herein by reference, in its entirety, for any purpose.
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Number | Date | Country | |
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Parent | 16358587 | Mar 2019 | US |
Child | 17301533 | US |