Claims
- 1. A semiconductor manufacturing apparatus for emitting an energy beam for crystallizing a semiconductor film formed on a substrate,wherein said apparatus can output a plurality of said energy beams continuously in relation to time and has a function of relatively moving said energy beam to scan a target to be irradiated, and the output instability of said energy beam is smaller than ±1%/h.
- 2. The apparatus according to claim 1, wherein the noise (optical noise) indicating the instability of said energy beam is not more than 0.1 rms %.
- 3. The apparatus according to claim 1, wherein the scanning speed with said energy beam is not less than 10 cm/sec.
- 4. The apparatus according to claim 1, wherein said apparatus can emit an energy beam with its energy being output intermittently.
- 5. The apparatus according to claim 1, wherein said energy beam is obtained from a CW laser.
- 6. The apparatus according to claim 5, wherein said CW laser is a semiconductor (LD) excitation solid state laser.
- 7. A semiconductor manufacturing apparatus comprising:disposing means for carrying thereon a substrate on a surface of which a semiconductor film is formed, so that said substrate can be moved in a plane parallel with a surface of said semiconductor film; laser oscillator having a function of outputting an energy beam continuously in relation to time; and beam splitter for optically splitting said energy beam emitted from said laser oscillator, into sub-beams; wherein the output instability of said energy beam is smaller than ±1%/h and the noise (optical noise) indicating the instability of said energy beam is not more than 0.1 rms %.
- 8. The apparatus according to claim 7, wherein said energy beam is obtained from a CW laser.
- 9. The apparatus according to claim 8, wherein said CW laser is a semiconductor excitation solid state laser.
- 10. A semiconductor manufacturing apparatus comprising:disposing means for carrying thereon a substrate on a surface of which a semiconductor film is formed, so that said substrate can be moved in a plane parallel with a surface of said semiconductor film; laser oscillator having a function of outputting an energy beam continuously in relation to time; and intermittent emission means to allow said energy beam to pass intermittently, wherein the output instability of said energy beam is smaller than ±1%/h and the noise (optical noise) indicating the instability of said energy beam is not more than 0.1 rms %.
- 11. The apparatus according to claim 10, further comprising beam splitter for optically splitting said energy beam emitted from said laser oscillator, into sub-beams.
- 12. The apparatus according to claim 10, wherein said energy beam is obtained from a CW laser.
- 13. The apparatus according to claim 12, wherein said CW laser is a semiconductor excitation solid state laser.
- 14. The apparatus according to claim 10, wherein said intermittent emission means have a transmission area and an interruption area for said energy beam.
- 15. A semiconductor manufacturing apparatus for emitting an energy beam for crystallizing a semiconductor film on a substrate comprising:laser oscillator having a function of outputting an energy beam continuously in relation to time, wherein said apparatus has a function of relatively moving said energy beam to scan a target to be irradiated, said energy beam is a semiconductor excitation solid state laser and formed into lines or oval figures, wherein the output instability of said energy beam is smaller than ±1%/h and the noise (optical noise) indicating the instability of said energy beam is not more than 0.1 rms %.
Priority Claims (2)
Number |
Date |
Country |
Kind |
2000-255646 |
Aug 2000 |
JP |
|
2001-202730 |
Jul 2001 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
This is a divisional of application Ser. No. 09/935,090, filed Aug. 22, 2001.
US Referenced Citations (12)
Foreign Referenced Citations (2)
Number |
Date |
Country |
407038110 |
Feb 1995 |
JP |
11074198 |
Mar 1999 |
JP |