Claims
- 1. A semiconductor device, comprising:
a first concave portion formed in a semiconductor substrate for serving as an aligning mark portion; a second concave portion formed in the semiconductor substrate; a first gate insulating film formed on a selected portion of said semiconductor substrate; a second gate insulating film formed in at least a bottom surface of the second concave portion; a first conductive film formed on said first gate insulating film; and a second conductive film formed on said second gate insulating film.
- 2. The semiconductor device according to claim 1, wherein the second gate insulating film and the second conductive film are formed on the bottom surface of the second concave portion, on at least one side surface of the second concave portion and on the semiconductor substrate, and a top surface of the first conductive film is flush with a surface of the second conductive film formed on the semiconductor substrate.
- 3. The semiconductor device according to claim 1, wherein the second gate insulating film is formed in a corner portion of the second concave portion.
- 4. The semiconductor device according to claim 1, wherein an insulating film is formed on the second conductive film, and the second concave portion is filled with the insulating film, the second gate insulating film and the second conductive film.
- 5. The semiconductor device according to claim 1, wherein the second concave portion is filled with the second gate insulating film and the second conductive film, and a surface of the second conductive film is substantially flat.
- 6. The semiconductor device according to claim 1, wherein the semiconductor substrate is an SOI substrate.
- 7. The semiconductor device according to claim 1, further comprising:
an element isolating region formed within the semiconductor substrate such that the second gate insulating film and the second conductive film extend over said element isolating region; a contact electrically connected to a portion of the second conductive film which is positioned on the element isolating region; and a wiring electrically connected to said contact.
- 8. The semiconductor device according to claim 1, wherein a plurality of second concave portions are formed in the semiconductor substrate such that the second concave portions are filled with the second gate insulating film and the second conductive film, and a surface of the second conductive film is substantially flat.
- 9. The semiconductor device according to claim 8, wherein a plurality of gate electrodes each consisting of the second conductive film is formed in said second concave portions.
- 10. The semiconductor device according to claim 1, wherein an impurity concentration in the second conductive film is higher than an impurity concentration in the semiconductor substrate.
- 11. The semiconductor device according to claim 1, wherein said second insulating film functions as an insulating film for an anti-fuse portion or for a capacitor element.
- 12. A semiconductor device comprising:
a semiconductor substrate having a substrate surface; a first gate insulating film formed on the semiconductor substrate and extending along the substrate surface; a first gate electrode formed on and extending along the first gate insulating film; a second gate insulating film formed on the semiconductor substrate and extending at an angle with respect to the substrate surface, the second gate insulating film being isolated from the first gate insulating film; a second gate electrode formed on the semiconductor substrate, being in contact with the second gate insulating film, extending along the second gate insulating film, and electrically isolated from the first gate electrode.
- 13. The semiconductor device according to claim 12, wherein a first laminated structure of a film including the first gate insulating film and the first gate electrode is the same as a second laminated structure of a film including the second gate insulating film and the second gate electrode.
- 14. The semiconductor device according to claim 12, further comprising a conductive film formed on the first gate electrode.
- 15. The semiconductor device according to claim 14, wherein the conductive film is a tungsten film.
- 16. The semiconductor device according to claim 12, wherein the semiconductor substrate is an SOI substrate having an insulating layer, and the first gate insulating film, the second gate insulating film and the second gate electrode are formed on the insulating layer.
- 17. The semiconductor device according to claim 12, further comprising:
a first cap layer formed on the first gate electrode; and a second cap layer formed on the semiconductor substrate and being in contact with a surface of the second gate electrode, the surface of the second gate electrode located opposite from the second gate insulating film.
- 18. A semiconductor device comprising:
a semiconductor substrate having a stepped portion, the stepped portion having a first surface, a second surface lower than the first surface, and a side surface connecting the first and second surfaces; a first gate insulating film formed on and extending along the first surface; a first gate electrode formed on and extending along the first gate insulating film; a second gate insulating film formed on and extending along the side surface, and isolated from the first gate insulating film; and a second gate electrode formed on and extending along the second gate insulating film and electrically isolated from the first gate electrode.
- 19. The semiconductor device according to claim 18, wherein a first laminated structure of a film including the first gate insulating film and the first gate electrode is the same as a second laminated structure of a film including the second gate insulating film and the second gate electrode.
- 20. The semiconductor device according to claim 18, further comprising a conductive film formed on the first gate electrode.
- 21. The semiconductor device according to claim 20, wherein the conductive film is a tungsten film.
- 22. The semiconductor device according to claim 18, wherein the semiconductor substrate is an SOI substrate having an insulating layer, and the second gate insulating film and the second gate electrode are formed on the insulating layer.
- 23. The semiconductor device according to claim 18, further comprising:
a first cap layer formed on the first gate electrode; and a second cap layer formed on the second gate electrode.
- 24. The semiconductor device according to claim 18, wherein a plurality of the stepped portions is provided.
- 25. The semiconductor device according to claim 18, further comprising:
a first conductive film formed on the first gate electrode; and a second conductive film formed on the second gate electrode and extending along the first surface.
- 26. The semiconductor device according to claim 25, wherein an upper surface of the second conductive film is flat.
- 27. The semiconductor device according to claim 18, further comprising:
a first cap layer formed on the first gate electrode; and a second cap layer formed on the second gate electrode and extending along the first surface.
- 28. The semiconductor device according to claim 27, wherein an upper surface of the second cap layer is flat.
- 29. A semiconductor device comprising:
a semiconductor substrate having a flat portion and a projection, the flat portion having a flat surface, the projection having an upper surface, lower surface, a first side surface and a second side surface, and the flat surface being approximately equal in height to one of the upper surface of the projection and the lower surface of the projection, a first gate insulating film formed on and extending along the flat surface; a first gate electrode formed on and extending along the first gate insulating film; a second gate insulating film formed on the projection, extending along the upper surface of the projection and the first and second side surfaces, and separated from the first gate insulating film; a second gate electrode formed on and extending along the second gate insulating film, and electrically separated from the first gate electrode.
- 30. The semiconductor device according to claim 29, wherein a first laminated structure of a film including the first gate insulating film and the first gate electrode is the same as a second laminated structure of a film including the second gate insulating film and the second gate electrode.
- 31. The semiconductor device according to claim 29, further comprising:
a first conductive film formed on the first gate electrode; and a second conductive film formed on the second gate electrode above the upper surface of the projection.
- 32. The semiconductor device according to claim 31, wherein the first and second conductive films are tungsten films.
- 33. The semiconductor device according to claim 31, wherein an upper surface of the second conductive film is flat.
- 34. The semiconductor device according to claim 29, wherein the semiconductor substrate is an SOI substrate having an insulating film and a semiconductor layer formed on the insulating film, and a distance between the lower surface of the projection and the upper surface of the projection is equal to or greater than a distance corresponding to a thickness of the semiconductor layer.
- 35. The semiconductor device according to claim 29, further comprising:
a first cap layer formed on the first gate electrode; and a second cap layer formed on the second gate electrode.
- 36. The semiconductor device according to claim 35, wherein an upper surface of the second cap layer located above the upper surface of the projection is flat.
- 37. The semiconductor device according to claim 29, wherein a plurality of the projections is provided.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2000-039968 |
Feb 2000 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional application of prior U.S. Ser. No. 09/783,023, filed Feb. 15, 2001, which is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2000-039968, filed Feb. 17, 2000.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09783023 |
Feb 2001 |
US |
Child |
10872506 |
Jun 2004 |
US |