Claims
- 1. A semiconductor device comprising a first insulating film 300 .ANG. to 2 .mu.m in thickness consisting essentially of silicon nitride in contact with a first surface of an indium-tin-oxide film; a second insulating film on a second surface of said indium-tin-oxide film opposite to that of said first insulating film, where said first insulating film is in contact with a silicon oxide thin film parallel to said first insulating film.
- 2. A semiconductor device according to claim 1, wherein said second film having a dielectric constant equal to or greater than that of silicon nitride is disposed on at least a portion of said first insulating film.
- 3. A semiconductor device according to claim 2, wherein the film having a dielectric constant equal to or greater than that of silicon nitride is selected from a group of oxides consisting of Ta.sub.2 O.sub.5, TiO.sub.2, Al.sub.2 O.sub.3, PbTiO.sub.3, PZT (composite oxide of Pb, Zr and Ti), and KTN (composite oxide of K, Ta and Nb).
- 4. A semiconductor device according to claim 1, wherein said second insulating film consists essentially of silicon nitride.
- 5. A semiconductor device comprising an indium-tin-oxide film, wherein a surface of said indium-tin-oxide film is in contact with a surface of a silicon nitride film 300 .ANG. to 2 .mu.m in thickness, and another surface of said silicon nitride film is in contact with a silicon oxide film parallel to said silicon nitride film.
- 6. A semiconductor device according to claim 5, wherein an insulating film is disposed on another surface of said indium-tin-oxide film.
- 7. A semiconductor device according to claim 6, wherein said insulating film comprises silicon nitride.
- 8. A semiconductor device according to claim 6, wherein said insulating film is selected from SiO.sub.2, polyimide, TaO.sub.2, phospho-silicate glass or arsenic silicate glass.
- 9. A liquid-crystal display device according to the semiconductor device of claim 5.
- 10. A photoelectric converting device according to the semiconductor device of claim 5.
Priority Claims (2)
Number |
Date |
Country |
Kind |
4-075879 |
Feb 1992 |
JPX |
|
4-358559 |
Dec 1992 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 08/366,428, filed Dec. 30, 1994, now abandoned; which is a continuation of application Ser. No. 08/022,521, filed Feb. 25, 1993, now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4990460 |
Moriyama |
Feb 1991 |
|
5341012 |
Misawa et al. |
Aug 1994 |
|
Foreign Referenced Citations (2)
Number |
Date |
Country |
57-76525 |
Oct 1980 |
JPX |
WO8903593 |
Apr 1989 |
WOX |
Continuations (2)
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Number |
Date |
Country |
Parent |
366428 |
Dec 1994 |
|
Parent |
22521 |
Feb 1993 |
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