Number | Date | Country | Kind |
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4-147646 | Jun 1992 | JPX |
This application is a continuation of application Ser. No. 08/043,230, filed Apr. 6, 1993, now abandoned.
Number | Name | Date | Kind |
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4722913 | Miller | Feb 1988 |
Entry |
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"Low Temperature Si.sub.2 H.sub.6 Si Epitaxy In-Situ Doped with AsH.sub.3 /SiH.sub.4 ", by M. Sadamoto, et al, Journal of Electronic Materials, vol. 19, No. 12, 1990, pp. 1395-1402. |
"GaAs Growth Using Tertiarybutylarsine and Trimethylgallium", by C. A. Larsen et al, Journal of Crystal Growth 93, 1988, pp. 15-19. |
"Alternate Sources and Growth Chemistry for OMVPE and CBE Processes", by G. B. Stringfellow, Journal of Crystal Growth 105, 1990, pp. 260-270. |
Number | Date | Country | |
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Parent | 43230 | Apr 1993 |