"A1GaAs/GaAs Lateral Current Injection Multiquantum Well (LCI-MQW) Laser Using Impurity-Induced Disordering", A. Furuya et al., IEEE Journal of Quantum Electronics, vol. 23, No. 12, Dec. 1988, pp. 2448-2453. |
"The Diffusion of Silicon in Gallium Arsenide", G. R. Antell, 1965, Solid-State Electronics, vol. 8 pp. 943-946 (No month avail). |
"Diffusion of silicon in gallium arsenide using rapid thermal processing: Experimental and model", Greiner et al., Applied Physics Letters, Vo. 44(8) pp. 750-752 (Apr. 15, 1984). |
"Disorder of an A1.sub.x Ga.sub.1-x As-GaAs Superlattice by Donor Diffusion", K. Meehan, et al., Applied Physics Letters, vol. 45(5), pp. 549-551, (Sep. 1, 1984). |
"Design of Fabry-Perot Surface-Emitting Lasers with a Periodic Gain Structure", S. W. Corzine at al., IEEE Journal of Quantum Electronics, vol. 25, No. 6, pp. 1513-1524, Jun. 1989. |
"Fabrication of Low Threshold Voltage Microlasers", Scherer et al., Electronics Letters, vol. 28, No. 13, pp. 1224-1226, Jun. 18, 1992. |
"Channelling photodiode: A new versatile interdigitated p-n junction photodetector", F. Capasso et al., Applied Phys. Lett. 41(1), pp. 94-946, Nov. 15, 1982. |
"Doping (n-i-p-i) Superlattices", Dohler et al., Academic Press, Inc., Synthetic Modulated Structures, pp. 163-214, 2985 (No month avail). |