ordering or disordering the natural superlattice in ternary or quaternary materials

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H01S5/3206

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HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

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H01S5/3206ordering or disordering the natural superlattice in ternary or quaternary materials

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,278,309
- Issue date Apr 15, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,224,378
- Issue date Feb 11, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with chirp layer
- Patent number 11,817,525
- Issue date Nov 14, 2023
- SILANNA UV TECHNOLOGIES PTE LTD
- Norbert Krause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 11,502,223
- Issue date Nov 15, 2022
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with chirp layer
- Patent number 10,978,611
- Issue date Apr 13, 2021
- SILANNA UV TECHNOLOGIES PTE LTD
- Norbert Krause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method for manufacturing se...
- Patent number 9,331,234
- Issue date May 3, 2016
- Kabushiki Kaisha Toshiba
- Hajime Nago
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method for manufacturing se...
- Patent number 9,112,111
- Issue date Aug 18, 2015
- Kabushiki Kaisha Toshiba
- Hajime Nago
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor with active layer of quantum well structure w...
- Patent number 8,304,790
- Issue date Nov 6, 2012
- Nichia Corporation
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extended wavelength strained layer lasers having nitrogen disposed...
- Patent number 7,627,014
- Issue date Dec 1, 2009
- JDS Uniphase Corporation
- Jack L. Jewell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed brag...
- Patent number 7,545,560
- Issue date Jun 9, 2009
- Finisar Corporation
- Hoki Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor with active layer of quantum well structure w...
- Patent number 7,166,869
- Issue date Jan 23, 2007
- Nichia Corporation
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor with active layer of quantum well structure w...
- Patent number 7,166,874
- Issue date Jan 23, 2007
- Nichia Corporation
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended wavelength strained layer lasers having nitrogen disposed...
- Patent number 6,920,165
- Issue date Jul 19, 2005
- Picolight Incorporated
- Jack L. Jewell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped semiconductor material, a method of manufacturing the doped s...
- Patent number 6,653,248
- Issue date Nov 25, 2003
- Sharp Kabushiki Kaisha
- Alistair Henderson Kean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device
- Patent number 6,639,926
- Issue date Oct 28, 2003
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended wavelength strained layer lasers having strain compensated...
- Patent number 6,546,031
- Issue date Apr 8, 2003
- Picolight Incorporated
- Jack L. Jewell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting devices
- Patent number 6,452,215
- Issue date Sep 17, 2002
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped semiconductor material, a method of manufacturing the doped s...
- Patent number 6,426,522
- Issue date Jul 30, 2002
- Sharp Kabushiki Kaisha
- Alistair Henderson Kean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended wavelength strained layer lasers having strain compensated...
- Patent number 6,359,920
- Issue date Mar 19, 2002
- Picolight Incorporated
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing tunable laser
- Patent number 5,976,903
- Issue date Nov 2, 1999
- Electronics and Telecommunications Research Institute
- Bun Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extended wavelength strained layer lasers having strain compensated...
- Patent number 5,960,018
- Issue date Sep 28, 1999
- Picolight Incorporated
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor device
- Patent number 5,959,307
- Issue date Sep 28, 1999
- Nichia Chemical Industries Ltd.
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Edge-emitting semiconductor lasers
- Patent number 5,886,370
- Issue date Mar 23, 1999
- Xerox Corporation
- Decai Sun
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Monolithic integrated optical semiconductor component
- Patent number 5,862,168
- Issue date Jan 19, 1999
- Alcatel Alsthom
- Michael Schilling
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extended wavelength strained layer lasers having strain compensated...
- Patent number 5,825,796
- Issue date Oct 20, 1998
- Picolight Incorporated
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extended wavelength strained layer lasers having nitrogen disposed...
- Patent number 5,719,894
- Issue date Feb 17, 1998
- Picolight Incorporated
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extended wavelength strained layer lasers having short period super...
- Patent number 5,719,895
- Issue date Feb 17, 1998
- Picolight Incorporated
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making a semiconductor laser device
- Patent number 5,648,295
- Issue date Jul 15, 1997
- Fuji Xerox Co., Ltd.
- Hiromi Otoma
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices incorporating p-type and n-type impurity indu...
- Patent number 5,608,753
- Issue date Mar 4, 1997
- Xerox Corporation
- Thomas L. Paoli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 5,588,016
- Issue date Dec 24, 1996
- Fuji Xerox Co., Ltd.
- Hiromi Otoma
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE WITH CHIRP LAYER
- Publication number 20240030375
- Publication date Jan 25, 2024
- Silanna UV Technologies Pte Ltd
- Norbert Krause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH CHIRP LAYER
- Publication number 20210226082
- Publication date Jul 22, 2021
- Silanna UV Technologies Pte Ltd
- Norbert Krause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH CHIRP LAYER
- Publication number 20210036183
- Publication date Feb 4, 2021
- Silanna UV Technologies Pte Ltd
- Norbert Krause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SE...
- Publication number 20140183446
- Publication date Jul 3, 2014
- KABUSHIKI KAISHA TOSHIBA
- Hajime NAGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor with active layer of quantum well structure w...
- Publication number 20070272915
- Publication date Nov 29, 2007
- NICHIA CORPORATION
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Application
AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed brag...
- Publication number 20060078026
- Publication date Apr 13, 2006
- Finisar
- Hoki Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Extended wavelength strained layer lasers having nitrogen disposed...
- Publication number 20050232323
- Publication date Oct 20, 2005
- Picolight Incorporated
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR WITH ACTIVE LAYER OF WELL STRUCTURE WITH INDI...
- Publication number 20040183063
- Publication date Sep 23, 2004
- Nichia Corporation
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor with active layer of quantum well structure w...
- Publication number 20040101012
- Publication date May 27, 2004
- Nichia Corporation
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor light-emitting device
- Publication number 20040041162
- Publication date Mar 4, 2004
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Shimoyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Extended wavelength strained layer lasers having nitrogen disposed...
- Publication number 20040017835
- Publication date Jan 29, 2004
- Jack L. Jewell
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor device
- Publication number 20030015724
- Publication date Jan 23, 2003
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Application
Doped semiconductor material, a method of manufacturing the doped s...
- Publication number 20020149030
- Publication date Oct 17, 2002
- Alistair Henderson Kean
- H01 - BASIC ELECTRIC ELEMENTS

ordering or disordering the natural superlattice in ternary or quaternary materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epitaxial oxide materials, structures, and devices

Epitaxial oxide materials, structures, and devices

Semiconductor structure with chirp layer

Epitaxial oxide materials, structures, and devices

Semiconductor structure with chirp layer

Semiconductor light emitting device and method for manufacturing se...

Semiconductor light emitting device and method for manufacturing se...

Nitride semiconductor with active layer of quantum well structure w...

Extended wavelength strained layer lasers having nitrogen disposed...

AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed brag...

Nitride semiconductor with active layer of quantum well structure w...

Nitride semiconductor with active layer of quantum well structure w...

Extended wavelength strained layer lasers having nitrogen disposed...

Doped semiconductor material, a method of manufacturing the doped s...

Semiconductor light-emitting device

Extended wavelength strained layer lasers having strain compensated...

Semiconductor light emitting devices

Doped semiconductor material, a method of manufacturing the doped s...

Extended wavelength strained layer lasers having strain compensated...

Method for manufacturing tunable laser

Extended wavelength strained layer lasers having strain compensated...

Nitride semiconductor device

Edge-emitting semiconductor lasers

Monolithic integrated optical semiconductor component

Extended wavelength strained layer lasers having strain compensated...

Extended wavelength strained layer lasers having nitrogen disposed...

Extended wavelength strained layer lasers having short period super...

Method of making a semiconductor laser device

Semiconductor devices incorporating p-type and n-type impurity indu...

Semiconductor laser device

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE WITH CHIRP LAYER

SEMICONDUCTOR STRUCTURE WITH CHIRP LAYER

SEMICONDUCTOR STRUCTURE WITH CHIRP LAYER

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SE...

Nitride semiconductor with active layer of quantum well structure w...

AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed brag...

Extended wavelength strained layer lasers having nitrogen disposed...

NITRIDE SEMICONDUCTOR WITH ACTIVE LAYER OF WELL STRUCTURE WITH INDI...

Nitride semiconductor with active layer of quantum well structure w...

Semiconductor light-emitting device

Extended wavelength strained layer lasers having nitrogen disposed...

Nitride semiconductor device

Doped semiconductor material, a method of manufacturing the doped s...