Claims
- 1. A semiconductor having an enhanced acceptor activation comprising:
- a ternary compound semiconductor having a non-abruptly periodically varying composition;
- wherein said ternary compound semiconductor is doped.
- 2. The semiconductor of claim 1, wherein said composition of said ternary compound semiconductor varies in one dimension.
- 3. The semiconductor of claim 1, wherein said composition of said ternary compound semiconductor varies in two dimensions.
- 4. The semiconductor of claim 1, wherein said composition of said ternary compound semiconductor varies in three dimensions.
- 5. The semiconductor of claim 1, wherein the period of said periodically varying composition is between 40 and 400 .ANG..
- 6. The semiconductor of claim 1, wherein said ternary compound semiconductor comprises uniform p-type doping.
- 7. The semiconductor of claim 1, wherein said composition of said ternary compound semiconductor varies parabolically.
- 8. The semiconductor of claim 1, wherein said composition of said ternary compound semiconductor varies sinusoidally.
- 9. The semiconductor of claim 1 having the composition Al.sub.x In.sub.1-x N.
- 10. The semiconductor of claim 1 having the composition Al.sub.x Ga.sub.1-x N.
Parent Case Info
This application claims the benefit of U.S. Provisional Application No. 60/024,547, filed Aug. 23, 1996.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5298108 |
Miller |
Mar 1994 |
|
5679965 |
Schetzine |
Oct 1997 |
|