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H01L29/151

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/151Compositional structures

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,206,048
- Issue date Jan 21, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility group-III nitride transistors with strained channels
- Patent number 12,159,929
- Issue date Dec 3, 2024
- The Regents of the University of California
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,155,009
- Issue date Nov 26, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 12,142,639
- Issue date Nov 12, 2024
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and epitaxial oxide device with impact ionization
- Patent number 12,125,946
- Issue date Oct 22, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide device with impact ionization
- Patent number 12,095,006
- Issue date Sep 17, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,087,880
- Issue date Sep 10, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strain relaxed layer
- Patent number 12,046,639
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strain relaxed layer
- Patent number 12,046,640
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 12,040,378
- Issue date Jul 16, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Template-assisted synthesis of 2D nanosheets using nanoparticle tem...
- Patent number 11,964,879
- Issue date Apr 23, 2024
- Nanoco 2D Materials Limited
- Steven Daniels
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor device with strain relaxed layer
- Patent number 11,955,519
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital circuits comprising quantum wire resonant tunneling transis...
- Patent number 11,903,331
- Issue date Feb 13, 2024
- Koucheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride thermal management based on aluminum nitride substrates
- Patent number 11,862,718
- Issue date Jan 2, 2024
- BAE Systems Information and Electronic Systems Integration Inc.
- Gregg H. Jessen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with chirp layer
- Patent number 11,817,525
- Issue date Nov 14, 2023
- SILANNA UV TECHNOLOGIES PTE LTD
- Norbert Krause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 11,742,390
- Issue date Aug 29, 2023
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with enhanced contact structure and a...
- Patent number 11,664,427
- Issue date May 30, 2023
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strain relaxed layer
- Patent number 11,664,426
- Issue date May 30, 2023
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strain relaxed layer
- Patent number 11,563,088
- Issue date Jan 24, 2023
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 11,563,093
- Issue date Jan 24, 2023
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with strain relaxed layer
- Patent number 11,508,818
- Issue date Nov 22, 2022
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stretchable form of single crystal silicon for high performance ele...
- Patent number 11,456,258
- Issue date Sep 27, 2022
- The Board of Trustees of the University of Illinois
- John A. Rogers
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Vertical semiconductor device with enhanced contact structure and a...
- Patent number 11,387,325
- Issue date Jul 12, 2022
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Key-based multi-qubit memory
- Patent number 11,342,017
- Issue date May 24, 2022
- Nokia Technologies Oy
- Robert L. Willett
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-super lattice for switchable arrays
- Patent number 11,309,388
- Issue date Apr 19, 2022
- Texas Instruments Incorporated
- Benjamin Stassen Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing semiconductor device
- Patent number 11,270,907
- Issue date Mar 8, 2022
- Sumitomo Electric Industries, Ltd.
- Takehiko Kikuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V or II-VI compound semiconductor films on graphitic substrates
- Patent number 11,261,537
- Issue date Mar 1, 2022
- Norwegian University of Science and Technology (NTNU)
- Bjørn-Ove Fimland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot channel (QDC) quantum dot gate transistors, memories an...
- Patent number 11,251,270
- Issue date Feb 15, 2022
- Faquir Chand Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-germanium heterostructures with quantum wells having oscill...
- Patent number 11,133,388
- Issue date Sep 28, 2021
- Wisconsin Alumni Research Foundation
- Robert J. Joynt
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 11,063,131
- Issue date Jul 13, 2021
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20250040208
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARTIFICIAL DOUBLE-LAYER TWO-DIMENSIONAL MATERIAL AND METHOD OF MANU...
- Publication number 20250040209
- Publication date Jan 30, 2025
- National Central University
- CHING-YUAN SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250040212
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Takuya KITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240372035
- Publication date Nov 7, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENCH CONTACT LINERS
- Publication number 20240321981
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE TRANSISTOR
- Publication number 20240266469
- Publication date Aug 8, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE TRANSISTOR
- Publication number 20240258460
- Publication date Aug 1, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE TRANSISTOR
- Publication number 20240170612
- Publication date May 23, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR STRUCTURES
- Publication number 20240145466
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zi-Ang SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240072205
- Publication date Feb 29, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240055560
- Publication date Feb 15, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH CHIRP LAYER
- Publication number 20240030375
- Publication date Jan 25, 2024
- Silanna UV Technologies Pte Ltd
- Norbert Krause
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Nanocomposite Semiconductors
- Publication number 20240014271
- Publication date Jan 11, 2024
- The Government of the United States of America, as represented by the Secreta...
- Boris N. Feigelson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Semiconductor Structure Having Enhanced Hole...
- Publication number 20230395705
- Publication date Dec 7, 2023
- Institute of Semiconductors, Chinese Academy of Sciences
- Junwei LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING
- Publication number 20230387282
- Publication date Nov 30, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Pravanshu Mohanta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20230343829
- Publication date Oct 26, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER
- Publication number 20230268397
- Publication date Aug 24, 2023
- UNITED MICROELECTRONICS CORP.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER
- Publication number 20230253457
- Publication date Aug 10, 2023
- UNITED MICROELECTRONICS CORP.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE CONTAINING RESONANT TUNNELING BARRI...
- Publication number 20230164990
- Publication date May 25, 2023
- SANDISK TECHNOLOGIES LLC
- Peter Rabkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND EPITAXIAL OXIDE DEVICE WITH IMPACT IONIZATION
- Publication number 20230142457
- Publication date May 11, 2023
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20230143766
- Publication date May 11, 2023
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE DEVICE WITH IMPACT IONIZATION
- Publication number 20230142940
- Publication date May 11, 2023
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER
- Publication number 20220320292
- Publication date Oct 6, 2022
- UNITED MICROELECTRONICS CORP.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER
- Publication number 20220310794
- Publication date Sep 29, 2022
- UNITED MICROELECTRONICS CORP.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...
- Publication number 20220285498
- Publication date Sep 8, 2022
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL GATE MATERIAL ARRANGEMENTS FOR QUANTUM DOT DEVICES
- Publication number 20220190135
- Publication date Jun 16, 2022
- Roza Kotlyar
- B82 - NANO-TECHNOLOGY
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20220140087
- Publication date May 5, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE THERMAL MANAGEMENT BASED ON ALUMINUM NITRIDE SUBSTRATES
- Publication number 20220115524
- Publication date Apr 14, 2022
- BAE Systems Information and Electronic Integration Inc.
- Gregg H. Jessen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER
- Publication number 20220045173
- Publication date Feb 10, 2022
- UNITED MICROELECTRONICS CORP.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC OR ANTI-FERROELECTRIC TRENCH CAPACITOR WITH SPACERS F...
- Publication number 20210343856
- Publication date Nov 4, 2021
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS

Compositional structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epitaxial oxide materials, structures, and devices

High mobility group-III nitride transistors with strained channels

Epitaxial oxide materials, structures, and devices

Electronic device with gallium nitride transistors and method of ma...

Method and epitaxial oxide device with impact ionization

Epitaxial oxide device with impact ionization

Epitaxial oxide materials, structures, and devices

Semiconductor device with strain relaxed layer

Semiconductor device with strain relaxed layer

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Template-assisted synthesis of 2D nanosheets using nanoparticle tem...

Semiconductor device with strain relaxed layer

Digital circuits comprising quantum wire resonant tunneling transis...

III-nitride thermal management based on aluminum nitride substrates

Semiconductor structure with chirp layer

Electronic device with gallium nitride transistors and method of ma...

Vertical semiconductor device with enhanced contact structure and a...

Semiconductor device with strain relaxed layer

Semiconductor device with strain relaxed layer

Epitaxial oxide materials, structures, and devices

Semiconductor device with strain relaxed layer

Stretchable form of single crystal silicon for high performance ele...

Vertical semiconductor device with enhanced contact structure and a...

Key-based multi-qubit memory

Multi-super lattice for switchable arrays

Semiconductor device and method for producing semiconductor device

III-V or II-VI compound semiconductor films on graphitic substrates

Quantum dot channel (QDC) quantum dot gate transistors, memories an...

Silicon-germanium heterostructures with quantum wells having oscill...

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Patents Applicationslast 30 patents

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

ARTIFICIAL DOUBLE-LAYER TWO-DIMENSIONAL MATERIAL AND METHOD OF MANU...

NITRIDE SEMICONDUCTOR DEVICE

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENCH CONTACT LINERS

EPITAXIAL OXIDE TRANSISTOR

EPITAXIAL OXIDE TRANSISTOR

EPITAXIAL OXIDE TRANSISTOR

BIPOLAR JUNCTION TRANSISTOR STRUCTURES

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

SEMICONDUCTOR STRUCTURE WITH CHIRP LAYER

Bipolar Nanocomposite Semiconductors

Method for Fabricating Semiconductor Structure Having Enhanced Hole...

HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER

SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER

THREE DIMENSIONAL MEMORY DEVICE CONTAINING RESONANT TUNNELING BARRI...

METHOD AND EPITAXIAL OXIDE DEVICE WITH IMPACT IONIZATION

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

EPITAXIAL OXIDE DEVICE WITH IMPACT IONIZATION

SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER

SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER

VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...

LATERAL GATE MATERIAL ARRANGEMENTS FOR QUANTUM DOT DEVICES

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

III-NITRIDE THERMAL MANAGEMENT BASED ON ALUMINUM NITRIDE SUBSTRATES

SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER

FERROELECTRIC OR ANTI-FERROELECTRIC TRENCH CAPACITOR WITH SPACERS F...