Number | Date | Country | Kind |
---|---|---|---|
11-200242 | Jul 1999 | JP |
Number | Name | Date | Kind |
---|---|---|---|
5719805 | Masuoka | Feb 1998 | A |
5745412 | Choi | Apr 1998 | A |
5780341 | Ogura | Jul 1998 | A |
Number | Date | Country |
---|---|---|
2694618 | Dec 1997 | JP |
9321157 | Dec 1997 | JP |
Entry |
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“A New Flash-Erase EEPROM Cell with a Sidewall Select-Gate on its Source Side” By N. Naruke, IEDM-1989 pp. 603-606. |
“Ohyo Butsuri[or Applied Physics]”, vol. 65, No. 11, pp. 1114-1124. |
Japanese journal “Ohyo Butsuri (or Applied Physics)”, vol. 65, No. 11, pp. 1114-1124. |
JP-B-2694618 (corresponding to USSN 204175). |
JP-A-9-321157. |
IEDM, 1989 IEEE, pp. 603-606. |