Claims
- 1. A semiconductor integrated circuit device comprising:a semiconductor substrate having a semiconductor region to which a first signal is supplied; a source and a drain formed in said semiconductor region; a gate insulating film formed on said semiconductor region between said source and said drain; a gate formed on said gate insulating film and connected to an output terminal; and a delay circuit receiving a second signal, which is a complementary signal of the first signal, and applying a delayed signal, which is later than the first signal, to said gate.
- 2. The semiconductor integrated circuit device according to claim 1, wherein a voltage potential of the first, second and delayed signals varying between a first power supply voltage and a second power supply voltage is supplied to said gate.
- 3. The semiconductor integrated circuit device according to claim 1, wherein said delay circuit includes a MOS transistor having a gate, to which the second signal is applied, and a substrate region connected to said gate of said MOS transistor.
- 4. A semiconductor integrated circuit device comprising:a semiconductor substrate having a semiconductor region to which a first signal is supplied; a source and a drain formed in said semiconductor region; a gate insulating film formed on said semiconductor region between said source and said drain: a gate formed on said gate insulating film; and a delay circuit connected to said gate for applying a delayed signal of the first signal to said gate, wherein said delay circuit comprises an even number of inverters including nMOS and pMOS transistors which are connected in series and said delay signal is a non-inverted signal of said first signal.
- 5. A semiconductor integrated circuit device comprising:a semiconductor substrate having a semiconductor region to which a first signal is supplied; a source and a drain formed in said semiconductor region; a gate insulating film formed on said semiconductor region between said source and said drain; a gate formed on said gate insulating film; and a delay circuit connected to said gate for applying a delayed signal of the first signal to said gate, wherein a voltage potential of said first and delayed signals varying between a first power supply voltage and a second power supply voltage is supplied to said gate.
Priority Claims (3)
Number |
Date |
Country |
Kind |
7-139186 |
Jun 1995 |
JP |
|
7-231622 |
Sep 1995 |
JP |
|
7-317809 |
Dec 1995 |
JP |
|
Parent Case Info
This application is a continuation of Ser. No. 08/658,610 filed Jun. 5, 1996 now ABN.
US Referenced Citations (6)
Foreign Referenced Citations (1)
Number |
Date |
Country |
6-85262 |
Mar 1994 |
JP |
Non-Patent Literature Citations (1)
Entry |
IEEE Internal Electron Device Meeting, pp. 809-812, 1994, Fariborz Assderaghi, et al., “A Dynamic Thereshold Voltage MOSFET (DTMOS) For Ultra-Low Voltage Operation”. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
08/658610 |
Jun 1996 |
US |
Child |
09/348623 |
|
US |