The disclosures herein relate to a DC/DC-converter semiconductor integrated circuit using a bootstrap circuit.
DC/DC-converter semiconductor integrated circuits using a bootstrap circuit have conventionally been used in various applications (see Patent Document 1, for example).
In the semiconductor integrated circuit 10, a regulator 12 generates a direct-current voltage of 5 V, for example, from the direct-current voltage (e.g., 12 V) supplied through the external terminal VIN for provision to each part of the semiconductor integrated circuit 10, and, also, applies the above-noted 5-V direct-current voltage to the external terminal BS through a diode D1.
The external terminal SW is connected to the source of an n-channel MOS transistor M1 and the drain of an n-channel MOS transistor M2 serving as switching devices. The MOS transistor M1 has a drain thereof connected to the external terminal VIN, and a gate thereof to which a switching signal output from a driver circuit 13 is applied. The driver circuit 13 receives an operating power from the external terminals BS and SW. The MOS transistor M2 has a source thereof connected to the external terminal GND, and a gate thereof to which a switching signal output from a driver circuit 14 is applied.
A switch control unit 15 supplies switching signals having polarities opposite to each other to the driver circuits 13 and 14, respectively, thereby turning on the MOS transistors M1 and M2 alternately. The external terminal SW is set in the ground level when the MOS transistor M1 is in the off state (i.e., M2 in the on state), so that the capacitor C1 is charged with the 5-V voltage, resulting in the external terminal BS being set to 5 V.
The external terminal SW is set to 12 V supplied from the external terminal VIN when the MOS transistor M1 is in the on state (i.e., M2 in the off state), so that the external terminal BS is set to 17 V due to the charged voltage of the capacitor C1. This switching is repeatedly performed to output a predetermined direct-current voltage from the terminal 11 through smoothing by the inductor L1 or the like. In such a configuration in which the voltage at the external terminal SW is switched between HIGH and LOW by the switching devices M1 and M2, the capacitor C1 is provided between the external terminal SW and the external terminal BS. The charged voltage of this capacitor is used to apply a voltage higher than the voltage of the external terminal VIN to the external terminal BS, thereby supplying this higher voltage to the driver circuit 13 of the HIGH-side switching device M1 as a drive voltage. This makes it possible to fully turn on the HIGH-side switching device M1. The circuit to provide this high drive voltage is a bootstrap circuit.
The output voltage of the output terminal 11 is divided by the resistors R1 and R2 for provision to the inverted-input terminal of an error amplifier 16 through the external terminal FB of the semiconductor integrated circuit 20. The non-inverted-input terminal of the error amplifier 16 receives a reference voltage Vref. The error amplifier 16 generates an error voltage that is an error of the output voltage relative to the reference voltage Vref for provision to the inverted-input terminal of a PWM comparator 17.
The non-inverted-input terminal of the PWM comparator 17 receives a triangular wave of a predetermined frequency from an oscillator 18. The PWM comparator 17 compares the error voltage with the triangular wave to generate a PWM (i.e., pulse width modulation) signal for provision to the switch control unit 15. The switch control unit 15 generates a signal that is an inverse of the PWM signal for provision to the driver circuit 13 through a terminal DRH, and also supplies the PWM signal to the driver circuit 14 through a terminal DRL at the positive transitions of the PWM signal.
Although not shown in the figure, each of the external terminals VIN, BS, and SW of the semiconductor integrated circuit 10 is provided with a high-voltage ESD (electro-static discharge) protection device (having a breakdown voltage of few tens volts, for example) such as a diode having a cathode thereof connected to the external terminals VIN, BS, and SW and an anode thereof connected to the ground.
<Circuit Configuration Diagram of Driver Circuit>
The latch circuit 13b latches the output signal of the level-shift circuit 13a. The drive-stage inverter 13c includes a p-channel MOS transistor M11 and an n-channel MOS transistor M12 having a CMOS configuration serving as a first-stage inverter, and includes a p-channel MOS transistor M13 and an n-channel MOS transistor M14 having a CMOS configuration serving as a second-stage inverter.
[Patent Document 1] Japanese Patent Application Publication No. 2002-83872.
The semiconductor integrated circuit 10 illustrated in
This is because of the following. When a positive high voltage is applied to the external terminal BS relative to a reference level at the external terminal VIN, breakdown occurs between the source and gate of the MOS transistor M13 (or M11) or between the gate and source of the MOS transistor M14 (or M12) before the high-voltage ESD protection device provided at the terminal BS breaks down. As a result, an electric current flows from the external terminal BS into the external terminal VIN through the source and gate of the MOS transistor M13 (or M11), the gate and source of the MOS transistor M14 (or M12), and the body diode of the MOS transistor M1. As this happens, the MOS transistors M13 and M14 (or M11 and M12) are destroyed due to breakdown.
Accordingly, it may be desired to provide a semiconductor integrated circuit that protects circuit elements of the driver circuit from the danger of destruction.
According to one aspect, a DC/DC-converter semiconductor integrated circuit using a bootstrap circuit includes a protection device having a standard breakdown voltage to break down between a first terminal and a second terminal, between which a capacitor of the bootstrap circuit is located, in response to a voltage higher than a maximum voltage applied to the capacitor.
According to one aspect, a semiconductor integrated circuit includes a first external terminal, a second external terminal, a driver circuit to operate with a drive voltage that is a voltage between the first external terminal and the second external terminal, a switching device driven by the driver circuit to intermittently provide electrical conduction between a power supply voltage and the second external terminal, and a protection device situated between the first terminal and the second terminal to break down at a voltage lower than a voltage at which a transistor of the driver circuit breaks down.
According to at least one embodiment, circuit elements of the driver circuit are protected from the danger of destruction.
In the following, embodiments will be described with reference to the accompanying drawings.
<Block Configuration of Semiconductor Integrated Circuit>
Series-connected resistors R1 and R2 are located between the output terminal 21 and the external terminal GND. A capacitor C2 also connects therebetween. The connection point between the resistors R1 and R2 is connected to an external terminal FB of the semiconductor integrated circuit 20. A direct-current voltage of 12 V, for example, is applied from an external source to an external terminal VIN of the semiconductor integrated circuit 20.
In the semiconductor integrated circuit 20, further, a protection device 30 having a standard breakdown voltage (e.g., a breakdown voltage of a few volts) is located between the external terminal BS and the external terminal SW. Although not shown in the figure, the external terminal VIN is provided with a high-voltage ESD protection device (having a breakdown voltage of a few tens volts, for example) such as a diode having a cathode thereof connected to the external terminal VIN and an anode thereof connected to the ground.
In the semiconductor integrated circuit 20, a regulator 22 generates a direct-current voltage of 5 V, for example, from the direct-current voltage (e.g., 12 V) supplied through the external terminal VIN for provision to each part of the semiconductor integrated circuit 20, and, also, applies the above-noted 5-V direct-current voltage to the external terminal BS through a diode D1. The external terminal SW is connected to the source of an re-channel MOS transistor M1 and the drain of an n-channel MOS transistor M2 serving as switching devices.
The MOS transistor M1 has a drain thereof connected to the external terminal VIN, and a gate thereof to which a switching signal output from a driver circuit 23 is applied. The driver circuit 23 receives an operating power from the external terminals BS and SW. The MOS transistor M2 has a source thereof connected to the external terminal GND, and a gate thereof to which a switching signal output from a driver circuit 24 is applied.
A switch control unit 25 supplies switching signals having polarities opposite to each other to the driver circuits 23 and 24, respectively, thereby turning on the MOS transistors M1 and M2 alternately. The external terminal SW is set in the ground level when the MOS transistor M1 is in the off state (i.e., M2 in the on state), so that the capacitor C1 is charged with the 5-V voltage, resulting in the external terminal BS being set to 5 V.
The external terminal SW is set to 12 V supplied from the external terminal VIN when the MOS transistor M1 is in the on state (i.e., M2 in the off state), so that the external terminal BS is set to 17 V due to the charged voltage of the capacitor C1. This switching is repeatedly performed to output a predetermined direct-current voltage from the terminal 21 through smoothing by the inductor L1 or the like. In such a configuration in which the voltage at the external terminal SW is switched between HIGH and LOW by the switching devices M1 and M2, the capacitor C1 is provided between the external terminal SW and the external terminal BS. The charged voltage of this capacitor is used to apply a voltage higher than the voltage of the external terminal SW to the external terminal BS, thereby supplying the voltage between the external terminal BS and the external terminal SW to the driver circuit 23 of the HIGH-side switching device M1 as a drive voltage. This makes it possible to fully turn on the HIGH-side switching device M1 that intermittently provides electrical conduction between the external terminal VIN and the external terminal SW. The circuit to provide this high drive voltage is a bootstrap circuit.
During the normal operations, voltage between the external terminals SW and BS does not exceed 5 V. The voltage between the external terminals SW and BS exceeds 5 V at the time of abnormality such as ESD.
The output voltage of the output terminal 21 is divided by the resistors R1 and R2 for provision to the inverted-input terminal of an error amplifier 26 through the external terminal FB of the semiconductor integrated circuit 20. The non-inverted-input terminal of the error amplifier 26 receives a reference voltage Vref. The error amplifier 26 generates an error voltage that is an error of the output voltage relative to the reference voltage Vref for provision to the inverted-input terminal of a PWM comparator 27.
The non-inverted-input terminal of the PWM comparator 27 receives a triangular wave of a predetermined frequency from an oscillator 28. The PWM comparator 27 compares the error voltage with the triangular wave to generate a PWM (i.e., pulse width modulation) signal for provision to the switch control unit 25. The switch control unit 25 generates a signal that is an inverse of the PWM signal for provision to the driver circuit 23 through a terminal DRH, and also supplies the PWM signal to the driver circuit 24 through a terminal DRL at the positive transitions of the PWM signal.
<Circuit Configuration Diagram of Driver Circuit and Protection Device>
The level-shift circuit 23a converts an input signal having a high level of 5 V and a low level of 0 V into an output signal having a high level of 17 V and a low level of 12 V when the MOS transistor M1 is in the on state, and performs no conversion when the MOS transistor M1 is in the off state. The latch circuit 23b latches the output signal of the level-shift circuit 23a.
The drive-stage inverter 23c includes a p-channel MOS transistor M11 and an n-channel MOS transistor M12 having a CMOS configuration serving as a first-stage inverter, and includes a p-channel MOS transistor M13 and an n-channel MOS transistor M14 having a CMOS configuration serving as a second-stage inverter. The drains of the MOS transistors M13 and M14 are coupled to the gate of the MOS transistor M1.
The protection device 30 includes an re-channel MOS transistor 20. The MOS transistor 20 has a drain thereof connected to the external terminal BS, and has a gate, source, and back-gate thereof connected to the external terminal SW.
<Cross-sectional Configuration of Protection Device>
The p-type semiconductor substrate 41 is connected to the external terminal GND through a terminal 51. The n-type region 45 to serve as a drain and the n-type well 42 are connected to the external terminal BS through a terminal 52. The p-type well 43 to serve as a back-gate, the n-type region 44 to serve as a source, and the gate electrode 47 are connected to the external terminal SW through a terminal 53.
The semiconductor substrate 41 set to the ground level and the p-type well 43 serving as the back-gate are isolated from each other by the n-type well 42. Because of this, a high breakdown voltage (e.g., a few tens volts) is provided between the external terminal GND and the external terminal BS and between the external terminal GND and the external terminal SW. A standard breakdown voltage (e.g., in the range of 6 to 9 V) is provided between the n-type regions 44 and 45 formed in the back-gate p-type well 43, i.e., between the external terminals SW and BS.
When positive high voltage is applied to the external terminal BS relative to a reference level at the external terminal VIN, breakdown occurs between the drain and source of the protection device 30, i.e., between the external terminal SW and the external terminal BS before breakdown occurs between the source and gate of the MOS transistor M13 (or M11) or between the gate and source of the MOS transistor M14 (or M12), thereby protecting the MOS transistors M13 and M14 (or M11 and M12) from destruction. Namely, the protection device 30 breaks down at a lower voltage than the voltage at which the transistors of the drive-stage inverter 23c of the driver circuit 23 break down.
It may be noted that the protection device 30 is configured such that the contacts of the terminals 51 through 53 to the semiconductor substrate 41, the wells 42 and 43, and the n-type regions 44 and 45 have a large size, for example. Because of this, the protection device 30 is not destroyed upon breaking down.
The present application is based on priority application No. 2009-158080 filed on Jul. 2, 2009, with the Japanese Patent Office, the entire contents of which are hereby incorporated by reference.
20 SEMICONDUCTOR INTEGRATED CIRCUIT
21 OUTPUT TERMINAL
22 REGULATOR
23, 24 DRIVER CIRCUIT
25 SWITCH CONTROL UNIT
26 ERROR AMPLIFIER
27 PWM COMPARATOR
28 OSCILLATOR
30 PROTECTION CIRCUIT
41 SEMICONDUCTOR SUBSTRATE
42 N-TYPE WELL
43 P-TYPE WELL
44, 45 N-TYPE LAYER
46 INSULATING LAYER
47 GATE ELECTRODE
C1, C2 CAPACITOR
D1 DIODE
L1 INDUCTOR
M11-M21 MOS TRANSISTOR
R1, R2 RESISTOR
SD SCHOTTKY DIODE
Number | Date | Country | Kind |
---|---|---|---|
2009-158080 | Jul 2009 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/JP2010/059469 | 6/3/2010 | WO | 00 | 12/22/2011 |